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STB80NE06-10
Obsolete Product(s) - Obsolete Product(s)
N-CHANNEL 60V - 0.085 Ω - 80A D²PAK
"SINGLE FEATURE SIZE™" POWER MOSFET
Table 1. General Features
Typ e
STB80NE06-10 60 V < 0.01 Ω 80 A
V
DSS
R
DS(on)
I
D
FEATURES SUMMARY
■ TYPICAL R
■ EXCEPTIONAL dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ APPLICATION ORIENTED
DS(on)
= 0.085 Ω
CHARACTERIZATION
■ FOR THROUGH-HOLE VERSION CONTACT
SALES OFFICE
DESCRIPTION
This MOSFET is the latest development of STMicroelectronics unique "Single Feature Size
™"
strip-based process. The resulting transistor
shows extremely high packing density for low onresistance, rugged avalanche characteristics and
less critical alignment steps therefore a remarkable manufacturing reproducibility.
Figure 1. Package
3
1
TO-263
2
PAK
D
(suffix “T4”)
Figure 2. Internal Schematic Diagram
APPLICATIONS
■ SOLENOID AND RELAY DRIVERS
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ DC-DC CONVERTERS
■ AUTOMOTIVE ENVIRONMENT
Table 2. Order Codes
Part Number Marking Package Packaging
STB80NE06-10T4 B80NE06
2
PAK
D
TAPE & REEL
REV.2
1/10April 2004
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STB80NE06-10
Table 3. Absolute Maximum Ratings
Symbol Parameter Value Unit
Drain-source Voltage (VGS = 0) 60 V
V
DS
V
DGR
V
GS
I
D
I
D
(1)
I
DM
P
tot
(2)
dv/dt
T
stg
T
j
Note: 1. Pulse width limited by safe operating area
2. ISD ≤80 A, di/dt ≤ 300 A/µs, V
Table 4. Thermal Data
Symbol Parameter Value Unit
R
thj-case
R
thj-amb
T
l
Drain- gate Voltage (RGS = 20 kΩ)60V
Gate-source Voltage ± 20 V
Drain Current (cont.) at TC = 25 °C 80 A
Drain Current (cont.) at TC = 100 °C 57 A
Drain Current (pulsed) 320 A
Total Dissipation at TC = 25 °C 150 W
Derating Factor 1 W°/C
Peak Diode Recovery voltage slope 7 V/ns
Storage Temperature -65 to 175 °C
Max. Operating Junction Temperature 175 °C
DD
≤ V
(BR)DSS
, Tj ≤ T
JMAX
Thermal Resistance Junction-case Max 1 °C/W
Thermal Resistance Junction-ambient Max 62.5 °C/W
Maximum Lead Temperature For Soldering Purpose 300 °C
Table 5. Avalanche Characteristics
Symbol Parameter Max Value Unit
I
AR
E
AS
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
max, δ < 1%)
j
Single Pulse Avalanche Energy
(starting T
= 25 °C; ID = IAR; VDD = 30 V)
j
80 A
250 mJ
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STB80NE06-10
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise specified)
case
Table 6. Off
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID = 250 mA; VGS = 0 60 V
Breakdown Voltage
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (VGS = 0)
Gate-body Leakage
VDS = Max Rating 1 µA
V
= Max Rating Tc = 125 °C 10 µA
DS
VGS = ± 20 V ± 100 nA
Current (VDS = 0)
Table 7. On
(1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage VDS = VGS; ID = 250 µA234V
Static Drain-source On
VGS = 10V; ID = 40 A 8.5 10 mΩ
Resistance
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Table 8. Dynamic
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1)
g
fs
C
C
C
Forward
Transconductance
Input Capacitance VDS = 25 V; f = 1 MHz; VGS = 0 7600 10000 pF
iss
Output Capacitance 890 1100 pF
oss
Reverse Transfer
rss
Capacitance
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
VDS > I
D(on)
x R
DS(on)max
; ID = 40 A 19 38 S
150 200 pF
Table 9. Switching On
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
Q
Q
Q
Turn-on Time VDD = 30 V; ID = 40 A; RG = 4.7 Ω;
= 10 V (see test circuit, Figure 16)
V
t
Rise Time 150 200 ns
r
Total Gate Charge VDD = 48 V; ID = 80 A; VGS = 10 V 140 nC
g
Gate-Source Charge 20 nC
gs
Gate-Drain Charge 50 nC
gd
GS
50 65 ns
Table 10. Switching Off
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
Off-voltage Rise Time VDD = 48 V; ID = 40 A; RG = 4.7 Ω
= 10 V (see test circuit, Figure 18)
V
t
Fall Time 75 100 ns
r
Cross-over Time 130 170 ns
t
c
GS
45 60 ns
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Table 11. Source Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
I
SDM
V
SD
Q
I
rrm
Note: 1. Pulse width limited by safe operating area
Figure 3. Safe Operating Area Figure 4. Thermal Impedance
Source-drain Current 80 A
SD
(1)
Source-drain Current
(pulsed)
(2)
Forward On Voltage ISD = 80 A; VGS = 0 1.5 V
Reverse Recovery Time ISD = 80 A; di/dt = 100 A/µs; VDD = 30 V;
t
rr
Reverse Recovery Charge 0.4 nC
rr
Reverse Recovery Current 8 A
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
= 150 °C( see test circuit, Figure 18)
T
j
100 ns
320 A
Figure 5. Output Characteristics Figure 6. Transfer Characteristics
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Figure 7. Transconductance Figure 8. Static Drain-source On Resistance
Figure 9. Gate Charge vs Gate-source Voltage Figure 10. Capacitance Variations
Figure 11. Normalized Gate Thresold Voltage
vs Temperature
Figure 12. Normalized on Resistance vs
Temperature
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Figure 13. Source-drain Diode Forward
Characteristics
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Figure 14. Unclamped Inductive Load Test
Circuit
Figure 16. Switching Time Test Circuit For
Resistive Load
Figure 15. Unclamped Inductive Waveforms
Figure 17. Gate Charge Test Circuit
Figure 18. Test Circuit For Inductive Load
Swiching And Diode Recovery Times
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PACKAGE MECHANICAL
Table 12. TO-263 (D
Symbol
A 4.4 4.6 0.173 0.181
A1 2.49 2.69 0.098 0.106
A2 0.03 0.23 0.001 0.009
B 0.7 0.93 0.027 0.036
B2 1.14 1.7 0.044 0.067
C 0.45 0.6 0.017 0.023
C2 1.23 1.36 0.048 0.053
D 8.95 9.35 0.352 0.368
D1 8 0.315
E 10 10.4 0.393
E1 8.5 0.334
G 4.88 5.28 0.192 0.208
L 15 15.85 0.590 0.625
L2 1.27 1.4 0.050 0.055
L3 1.4 1.75 0.055 0.068
M 2.4 3.2 0.094 0.126
R 0.4 0.015
V2 0° 4°
2
PAK) Mechanical Data
millimeters inches
Min Typ Max Min Typ Max
2
Figure 19. TO-263 (D
Note: Drawing is not to scale.
PAK) Package Dimensions
3
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REVISION HISTORY
Table 13. Revision History
Date Revision Description of Changes
February-1998 1 First Issue
14-Apr-2004 2 Stylesheet update. No content change.
STB80NE06-10
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STB80NE06-10
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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© 2004 STMicroelectronics - All rights reserved
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