Datasheet STB7NA40 Datasheet (SGS Thomson Microelectronics)

STB7NA40

N - CHANNEL ENHANCEMENT MODE

FAST POWER MOS TRANSISTOR

 TYPICALR

DS(on)

= 0.82 Ω

 ± 30V GATE TOSOURCE VOLTAGE RATING
 100% AVALANCHETESTED
 REPETITIVEAVALANCHEDATAAT100

o

C

 LOW INTRINSIC CAPACITANCES
 GATECHARGE MINIMIZED
 REDUCEDTHRESHOLD VOLTAGESPREAD
 THROUGH-HOLEI2PAK (TO-262) POWER

PACKAGEIN TUBE(SUFFIX ”-1”)

 SURFACE-MOUNTING D2PACK (TO-263)

POWERPACKAGEIN TUBE(NO SUFFIX)
OR IN TAPE & REEL (SUFFIX ”T4”)

APPLICATIONS

 HIGH CURRENT, HIGH SPEED SWITCHING
 SWITCHMODE POWER SUPPLIES(SMPS)
 DC-AC CONVERTERSFOR WELDING

EQUIPMENTANDUNINTERRUPTIBLE
POWERSUPPLIESAND MOTOR DRIVE

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Val ue Uni t

V

DS

Drain-source Voltage (VGS= 0) 400 V

V

DGR

Drain- gate Voltage ( RGS=20kΩ) 400 V

V

GS

Gate-s ource Voltage ± 30 V

I

D

Drain Current (continuous) at Tc=25oC6.5A

I

D

Drain Current (continuous) at Tc=100oC4.1A

I

DM

(•) Drain Current (pulsed) 26 A

P

tot

Tot al Dissipat ion at Tc=25oC 100 W
Derat ing Fa ct or 0.8 W/

o

C

T

stg

Sto rage Tem perature -65 t o 15 0

o

C

T

j

Max. Operat ing Juncti on Temper at u r e 150

o

C

(•) Pulsewidth limitedby safe operating area

TYPE V

DSS

R

DS(on )

I

D

STB 7NA40 400 V < 1 Ω 6.5 A

October 1995

1

2

3

1

3

I2PAK

TO-262

D2PAK
TO-263

1/10

THERMAL DATA

R

thj-case

R

thj-amb

R

thc-sink

T

l

Therm al Resistanc e Juncti on-c ase Max
Therm al Resistanc e Juncti on-am b ient Max
Therm al Resistanc e Case-sink Ty p
Maxim um Lead Tem p era t ure For So ldering Purpose

1.25

62.5

0.5

300

o

C/W

o

C/W

o

C/W

o

C

AVALANCHE CHARACTERISTICS

Symb ol Param et er Max V al ue Uni t

I

AR

Avalanc h e Current , Repet it ive or Not -Repetiti ve
(pulse width limited by T

j

max, δ <1%)

6.5 A

E

AS

Single Pulse Avalanche Energy
(starting T

j

=25oC, ID=IAR,VDD=50V)

210 mJ

E

AR

Repetit ive Avalanche Energy
(pulse width limited by T

j

max, δ <1%)

8.4 mJ

I

AR

Avalanc h e Current , Repet it ive or Not -Repetiti ve
(T

c

=100oC, pulse wi dt h limited by Tjmax, δ <1%)

4.1 A

ELECTRICAL CHARACTERISTICS (T

case

=25oC unlessotherwise specified)

OFF

Symb ol Par amete r Test Cond i ti ons Min. Typ . Max. Uni t

V

(BR)DSS

Drain-s ource
Break down Vol t age

ID= 250 µ AVGS=0 400 V

I

DSS

Zero G ate Voltage
Drain Current (V

GS

=0)

V

DS

= Max Rating

V

DS

= Max Rating x 0.8 Tc=125oC

250

1000µAµA

I

GSS

Gat e- body Leakage
Current (V

DS

=0)

V

GS

= ± 30 V ± 100 nA

ON (∗)

Symb ol Par amete r Test Cond i ti ons Min. Typ . Max. Uni t

V

GS(t h)

Gat e T hreshold Voltage VDS=VGSID= 250 µA 2.25 3 3.75 V

R

DS(on)

Sta t ic Drain-sour ce O n
Resistance

VGS= 10V ID=3.5A
V

GS

=10V ID=3.5A Tc= 100oC

0.82 1
2

Ω
Ω

I

D(on)

On S t ate Drain Current VDS>I

D(on)xRDS(on)max

VGS=10V

6.5 A

DYNAMIC

Symb ol Par amete r Test Cond i ti ons Min. Typ . Max. Uni t

g

fs

(∗)Forward

Tra nsconductanc e

VDS>I

D(on)xRDS(on)maxID

= 3.5 A 3.1 4.6 S

C

iss

C

oss

C

rss

Input Capacitance
Out put Capacitanc e
Reverse Transfer
Capacit an c e

VDS=25V f=1MHz VGS= 0 700

120

31

900
160

43

pF
pF
pF

STB7NA40

2/10

ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON

Symb ol Par amete r Test Cond i ti ons Min. Typ . Max. Uni t

t

d(on)

t

r

Turn-on Time
Rise Time

VDD= 200 V ID=3.5A
R

G

=47 Ω VGS=10V

(see tes t circuit, figure 3)

25
75

35

100

ns
ns

(di/dt)

on

Turn-on Current Slope VDD= 320 V ID=7A

R

G

=47 Ω VGS=10V

(see tes t circuit, f igure 5)

220 A/µs

Q

g

Q

gs

Q

gd

Total Ga te Charge
Gat e- Source C har ge
Gate-Drain Charge

VDD=320V ID=7A VGS=10V 34

7

15

45 nC

nC
nC

SWITCHING OFF

Symb ol Par amete r Test Cond i ti ons Min. Typ . Max. Uni t

t

r(Voff)

t

f

t

c

Off-volt ag e Rise Time
Fall Time
Cross-over Time

VDD= 320 V ID=7A
R

G

=47 Ω VGS=10V

(see tes t circuit, figure 5)

40
25
75

55
35

100

ns
ns
ns

SOURCEDRAIN DIODE

Symb ol Par amete r Test Cond i ti ons Min. Typ . Max. Uni t

I

SD

I

SDM

(•)

Source-drain C urr ent
Source-drain C urr ent
(pulsed)

6.5
26

A
A

V

SD

(∗) For ward On Voltage ISD=6.5A VGS=0 1.6 V

t

rr

Q

rr

I

RRM

Revers e Recovery
Time
Revers e Recovery
Charge
Revers e Recovery
Current

ISD= 7 A di/dt = 100 A/µs
V

DD

=100V Tj=150oC

(see tes t circuit, figure 5)

380

4.8
25

ns

µC

A

(∗) Pulsed: Pulse duration =300 µs,duty cycle 1.5 %
(•) Pulse widthlimitedby safeoperating area

Safe Operating Area ThermalImpedance

STB7NA40

3/10

Derating Curve

TransferCharacteristics

Static Drain-sourceOn Resistance

Output Characteristics

Transconductance

Gate Charge vs Gate-source Voltage

STB7NA40

4/10

CapacitanceVariations

NormalizedOn Resistance vs Temperature

Turn-offDrain-source VoltageSlope

NormalizedGate Threshold Voltage vs
Temperature

Turn-onCurrent Slope

Cross-overTime

STB7NA40

5/10

SwitchingSafe OperatingArea

Source-drainDiode Forward Characteristics

Fig. 1: UnclampedInductive Load Test Circuit

AccidentalOverload Area

Fig. 2: Unclamped Inductive Waveform

STB7NA40

6/10

Fig. 3: SwitchingTimes Test Circuits For
ResistiveLoad

Fig. 5: TestCircuit For InductiveLoad Switching
And DIodeRecoveryTimes

Fig. 4: GateCharge test Circuit

STB7NA40

7/10

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.3 4.6 0.169 0.181

A1 2.49 2.69 0.098 0.106

B 0.7 0.93 0.027 0.036
B1 1.2 1.38 0.047 0.054
B2 1.25 1.4 0.049 0.055

C 0.45 0.6 0.017 0.023
C2 1.21 1.36 0.047 0.053

D 9 9.35 0.354 0.368

e 2.44 2.64 0.096 0.104

E 10 10.28 0.393 0.404

L 13.2 13.5 0.519 0.531

L1 3.48 3.78 0.137 0.149
L2 1.27 1.37 0.050 0.054

L

L1

B2

B

D

E

A

C2

C

A1

L2

e

TO-262 (I2PAK) MECHANICAL DATA

STB7NA40

8/10

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.3 4.6 0.169 0.181
A1 2.49 2.69 0.098 0.106

B 0.7 0.93 0.027 0.036
B2 1.25 1.4 0.049 0.055

C 0.45 0.6 0.017 0.023
C2 1.21 1.36 0.047 0.053

D 9 9.35 0.354 0.368

E 10 10.28 0.393 0.404

G 4.88 5.28 0.192 0.208

L 15 15.85 0.590 0.624

L2 1.27 1.37 0.050 0.054
L3 1.4 1.75 0.055 0.068

L2

L3

L

B2

B

G

E

A

C2

D

C

A1

TO-263 (D2PAK) MECHANICAL DATA

STB7NA40

9/10

Information furnished is believed to be accurateand reliable. However,SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor forany infringement ofpatents orother rights of thirdparties which may results fromits use. No
licenseis granted by implication orotherwise underany patent or patentrights of SGS-THOMSONMicroelectronics. Specifications mentioned
in this publicationare subjectto change without notice.This publication supersedes andreplaces all informationpreviously supplied.
SGS-THOMSON Microelectronicsproductsarenotauthorized foruse as criticalcomponents in lifesupportdevices or systems without express
writtenapproval of SGS-THOMSONMicroelectonics.

 1995 SGS-THOMSONMicroelectronics - All RightsReserved

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STB7NA40

10/10