The STB7102, designed for RF Mobile Phone
applications (0.5/2.5GHz), is an high isolation
2
1
5
6
6
Local Oscillator Buffer Amplifier. Manufactured in
the third generation of ST proprietary bipolar
process, it offers an excellent isolation and a good
linearity using only 4mA current c onsumption. The
PIN CONNECTION
Pin No.Pin Name
STB7102 is housed in an ultra miniature package
SOT323-6L surface mount package.
1INPUT
2GND
3GND
4OUTPUT
5GND
6VCC
ABSOLUTE MAXIMUM RATINGS
SymbolParameterConditions ValueUnit
V
T
Supply voltage3.3V
cc
Storage temperature-40 to +100
stg
T
Operating ambient temperature-30 to +85
a
2
1
o
C
o
C
1/9February, 25 2002
Page 2
STB7102
ELECTRICAL CHARACTERISTICS (
(T
= +25oC, Vcc = 2.7V, Zs = ZL = 50Ω, tested in circuit shown in fig.1, unless otherwise specified)
a
CELL BAND
)
SymbolParametersTest ConditionsMinTypMaxUnit
Freq.Frequency Range9901030MHz
VccSupply Voltage2.62. 72.8V
IccCurrent Consumption3.34.35.3mA
P1dBOutput Power at 1dB Compression PointF = 1010 MHz-2dBm
GpPower Gain F = 1010 MHz16.7dB
NFNoise FigureF = 1010 MHz2.7dB
Isol.Reverse IsolationF = 1010 MHz45dB
RLinInput Return Loss F = 1010 MHz30dB
RLoutOutput Return Loss F = 1010 MHz17.8dB
Figure 1 Cel l Band Applicat io n C ir cui t Co nfi guration
C8
U1
1.5pF
L2
2n2
ULOBA
J1
RF I N
L4
5n6
C1
33pF
3
2
GND
GND
INPUT1VCC
OUT
GND
4
5
6
C5
10nF
C3
33pF
L3
10nH
L1
33nH
C2
1uF
JP1
VCC
1
2
J2
RF OUT
2/9
Page 3
TYPICAL PERFORMANCE (CELL BAND)
Power Gainvs. Frequency and Voltage
STB7102
Power Gain vs. Frequency and Temperature
20
18
Vcc = 2. 8 V
16
14
Vcc = 2.7 V
Vcc = 2. 6 V
12
10
8
Power Gain (dB)
6
4
2
Ta = 25 °C
0
800900100011001200
Freque ncy (MHz)
Reverse Isolation vs. Frequency and Voltage
0
-10
-20
-30
Ta = 25 °C
20
18
16
14
Ta = 25 °C
Ta = -30 °C
Ta = 85 °C
12
10
8
Power Gain (dB)
6
4
2
Vcc = 2. 7 V
0
800900100011001200
Freque ncy (MHz)
Reverse Isolation vs. Frequency and Temperature
0
Vcc = 2.7 V
-10
-20
-30
-40
Reverse Isolation (dB)
Vcc = 2.7 V
-50
Vcc = 2.6 V
-60
800900100011001200
Vcc = 2.8 V
Frequency (MHz)
Input Return Lossvs. Frequency and Voltage
0
-5
-10
-15
Vcc = 2.7 V
Freque ncy (MHz)
Vcc = 2. 8 V
Vcc = 2.6 V
-20
Input Return Loss (dB)
-25
-30
-35
800900100011001200
Ta = 25 °C
-40
Reverse Isolation (dB)
Ta = -30 °C
-50
Ta = 85 °C
-60
800900100011001200
Ta = 25 °C
Freq ue ncy (MHz)
Input Return Lossvs. Frequency and Temperature
0
-5
-10
-15
-20
Input Return Loss (dB)
-25
Ta = 85 °C
-30
-35
Ta = 25 °CTa = -30 °C
800900100011001200
Freque ncy (MHz)
Vcc = 2.7 V
3/9
Page 4
STB7102
TYPICAL PERFORMANCE (CELL BAND)
Output Return Lossvs. Frequency and Voltage
Output Return Loss vs. Frequency and Temperature
0
-5
-10
-15
Vcc = 2.8 V
Vcc = 2.7 V
Vcc = 2.6 V
-20
-25
-30
Output Return Loss (dB)
-35
-40
-45
800900100011001200
Freque ncy (MHz)
Noise Figure vs. Frequency
4
3.5
3
2.5
2
1.5
Noise Figure (dB)
1
0.5
0
800900100011001200
Freque ncy (MHz)
Ta = 25 °C
0
-5
Ta = 85 °C
Vcc = 2. 7 V
-10
-15
-20
-25
-30
Output Return Loss (dB)
Ta = 25 °C
Ta = -30 °C
-35
-40
-45
800900100011001200
Freque ncy (MHz)
Output Power @ 1dBcompression point
P1dB
F = 1010 MHz
-13 -12 -11 -10 -9 -8 -7-6 -5-4 -3-2 -10
Poutput (dBm)
17
16
15
Gain (dB)
14
13
12
4/9
Page 5
STB7102
ELECTRICAL CHARACTERISTICS (
(T
= +25oC, Vcc = 2.7V, Zs = ZL = 50Ω, tested in circuit shown in fig.2, unless otherwise specified)
a
PCS BAND
)
SymbolParametersTest ConditionsMinTypMaxUnit
Freq.Frequency Range20402135MHz
VccSupply Voltage2.62. 72.8V
IccCurrent Consumption3.34.35.3mA
P1dBOutput Power at 1dB Compression PointF = 2085 MHz-1dBm
GpPower Gain F = 2085 MHz10dB
NFNoise FigureF = 2085 MHz5dB
Isol.Reverse IsolationF = 2085 MHz41dB
RLinInput Return Loss F = 2085 MHz17dB
RLoutOutput Return Loss F = 2085 MHz24dB
Figure 2 PCS Band Application Circuit Configuration
Information furnished is believed to be accurate an d rel i able. Howev er, STMicroel ectronics assumes no resp onsibility for the cons equences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implic ation or otherwise under any patent or patent rights of STMi croelectr onics. Sp ecifications mentioned in thi s publicati on are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as cri tical comp onents in life support dev i ces or systems wi thout exp ress written approval of STM i croelect ronics.
The ST log o i s registered trademark of STMicroelectronics
2002 STMicroelectronic s - All Rights Reserved
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9/9
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