Datasheet STB7001 Datasheet (SGS Thomson Microelectronics)

Page 1
900 MHz THREE GAIN LEVEL LNA
FULLY INTEGRATED 900 MHz LNA
THREE GAIN LEVELS (0dB, 18dB, 26dB typ.
@ 2.8V)
LOW NOISE FIGURE
TEMPERATURE COM PENSATED
STB7001
MSOP8
GSM HANDSETS
ORDER CODE
STB7001
BRANDING
7001
DESCRIPTION
The STB7001 is a Silicon monolithic amplifier, that offers low noise figure and three gain levels for 900-MHz applications. STB7001 is housed in a small industry-standard MSOP8 surface mount package, requiring very little board space (50% re­duction vs SO8 Package). MSOP8 dimensions are 3mmx5mm with a 1 .1mm thickness. The de­vice is ESD protected and requires minimum ex­ternal components in the application circuit, for the on-chip bias and gain cont rol . Furtherm ore, tem­perature and supply voltage compensation as­sures high stability over a wide range of operating conditions.
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
cc
Tj Junction Temperature 150 °C
T
stg
Supply voltage 5.5 V
Storage temperature -40 to +85 °C
THERMA L D ATA
Symbol Parameter Value Unit
R
th(j-a)
Junction -ambient Thermal Resistance 200 °C/W
1/7January, 22 2002
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STB7001
ELECTRICAL SPECIFICATION (T
= 25°C, Vcc = 2.8V)
amb
Symbol Parameters Test Conditions Min. Typ. Max. Unit
Vcc Supply voltage 2.7 2.8 2.9 V
(1)
for G
I
bias
Bias current
p1
G
p2
G
p3
(1) (1)
14 10
8
11.5
17.5
15.0
15.0
22.5 19
Istby Standby current 20 µA
f Frequency range 925 960 MHz
for G
p1
G
p1,2,3
NF
P1dB
IIP3
Power gain
1,2,3
1,2,3
1,2,3
Noise figure
Input 1 dB Compr.Power
Input Third Order Intercept
for G
for G
for G
-3.0
G
p2
16.0
24.0
G
p3 p1
G
p2
G
p3 p1
G
p2
G
p3 p1
G
p2
G
p3
0.0
18.0
26.0 10
3.1
2.5
-15.0
-19.0
-26.5
-6.0
-11.0
-20.0
3.0
20.0
28.0
VSWRi Input VSWR 1.5:1
VSWRo Output VSWR 1.5:1
AZout Zout LNA on/off 15 %
Note(1) : Gp1 min gain, Gp2 mid gain and Gp3 max gain.
mA
dB
dB
dBm
dBm
PINOUT
Pin Number Symbol Description Evaluation circuit components
1 RFin RF input L2 = 5.1nH, C2 = n/c 2 Gnd Ground 3 Vcc Voltage supply C4 = 8pF, L1 = 110nH, C7 = 10nF, C6 = 4.7uF 4 ARLNA0 Enable for power down C3 = 10nF 5 RFout RF output C9 = 5pf, L3 = 10nH, C10 = 10nF, C11 = 100pF, L4 = 110nH 6 Gnd Ground 7 GC1 Gain selection C5 = 10nF 8 GC2 Gain selection C8 = 10nF
GAIN SELECTI 0 N
G
G
p2
G
p3
p1
GC1 001 GC2 011
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TEST CIRCUIT SCHEMATIC
J1
VCC
VCC
S2
SW_SPDT
SMA_IN
C7 10n
L1
110n
C3 10n
C2 n/c
5n1
STB7001
JP1
VCC
C8
C10 10n
10n
C5 10n
C9
5p
L2
U1
C4 8p
VCC
1
RF_IN
2
GND
3
VCC ARLNA04RF_OUT
LNA
STB7001
L4
110n
GC2 GC1
GND
C11
100p
8 7 6 5
L3 10n
SW SPDT
SW SPDT
SMA_OUT
C12 n/c
C6
4u7
S1
VCC
S3
VCC
J2
1 2
BIAS
TEST CIRCUIT PHOTOMASTER (board dimenti ons 23.5x20. 3m m)
TOP VIEW
20.3mm
23.5mm
BOTTOM VIEW
20.3mm
23.5mm
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STB7001
INPUT/OUTPUT VSWR, ISOLATION AND GAIN PARAMETERS (MEASURED DATA)
MAX GAI N
Freq. VSWRi VSWRo Isola tion Gain
905 1.16 1.15 -43.61 25.09
912.5 1.15 1.17 -45.69 25.04
913.5 1.15 1.17 -42.84 24.98
927.5 1.15 1.17 -43.36 24.92 935 1.14 1.18 -42.42 24.85
942.5 1.14 1.19 -48.58 24.79 950 1.14 1.20 -47.86 24.72
957.5 1.13 1.18 -41.52 24.68 965 1.13 1.19 -45.53 24.61
972.5 1.14 1.22 -49.18 24.57 980 1.13 1.20 -44.99 24.48
987.5 1.14 1.21 -47.83 24.41 995 1.14 1.21 -45.33 24.35
MID GAI N
Freq. VSWRi VSWRo Isola tion Gain
905 1.18 1.10 -44.66 17.41
912.5 1.18 1.11 -43.96 17.36
913.5 1.18 1.11 -46.54 17.32
927.5 1.18 1.12 -46.48 17.28 935 1.18 1.12 -46.39 17.25
942.5 1.18 1.13 -48.29 17.19 950 1.18 1.13 -47.05 17.16
957.5 1.19 1.13 -48.72 17.11 965 1.20 1.14 -50.07 17.07
972.5 1.20 1.14 -50.48 17.02 980 1.21 1.15 -55.86 16.96
987.5 1.22 1.15 -52.12 16.92 995 1.23 1.15 -56.92 16.86
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MIN GAI N
Freq. VSWRi VSWRo Isola tion Gain
905 1.54 1.11 -43.83 0.0 7
912.5 1.54 1.11 -43.63 0.0 3
913.5 1.54 1.12 -45.88 -0.04
927.5 1.54 1.13 -45.76 -0.10 935 1.55 1.13 -45.69 -0.13
942.5 1.56 1.14 -46.75 -0.21 950 1.56 1.14 -45.29 -0.27
957.5 1.57 1.14 -45.20 -0.34 965 1.59 1.15 -45.38 -0.41
972.5 1.60 1.15 -45.79 -0.48 980 1.61 1.16 -45.15 -0.59
987.5 1.61 1.17 -42.79 -0.67 995 1.60 1.17 -43.49 -0.77
STB7001
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Page 6
STB7001
MSOP8 MECHANICAL DATA
TOP VIEW
c
E/2 2X
12
FRONT VIEW
a
S
E1
D2
b
D
A2
A
A1
SIDE VIEW
E2
E1
E
mm
Symbol
A1.10
A1
0.10
0.86
A2 D3.00 D2 2.95 E4.90 E1 3.00 E2
2.95
0.525
S
a
0.10
b
0.33
c
0.65
±TOL
MAX
+/-0.05 +/-0.08 +/-0.10 +/-0.10 +/-0.15 +/-0.10 +/-0.10
+0.07
-0.08
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STB7001
Information furnished is believed to be accurate and reliable. However, STM ic roelectronics assumes no responsi bility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implic ation or o th erwise under any patent or patent rights of STMi croelectronics. Sp ecifications menti oned in thi s publicati on are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics produ ct s are not authorized for use as cri tical comp onents in lif e support dev i ces or systems wi thout exp ress written approval of STMicroel ectronics.
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