Datasheet STP6NK60ZFP, STP6NK60Z, STB6NK60Z-1, STB6NK60Z Datasheet (SGS Thomson Microelectronics)

STP6NK60Z - STP6NK60ZFP

STB6NK60Z - STB6NK60Z-1

N-CHANNEL 600V - 1Ω - 6A TO-220/TO-220FP/D2PAK/I2PAK

Zener-Protected SuperMESH™Power MOSFET

TYPE V

STP6NK60Z
STP6NK60ZFP
STB6NK60Z
STB6NK60Z-1

■ TYPICAL R

■ EXTREMELY HIGH dv/dt CAPABILITY

■ 100% AVALANCHE TESTED

■ GAT E CHARGE MINIMIZED

■ VERY LOW INTRINSIC CAPACITANCES

■ VER Y GO OD MANUFACTURING

600 V
600 V
600 V
600 V

(on) = 1 Ω

DS

DSS

R

DS(on)

< 1.2 Ω
< 1.2 Ω
< 1.2 Ω
< 1.2 Ω

I

D

6A
6A
6A
6A

Pw

110 W

32 W
110 W
110 W

REPEATIBILITY

DESCRIPTION

The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established strip­based PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special careis tak­en to ensure a very good dv/dt capability for the
most dem anding applications. Such series comple­ments ST full range of high voltage MOSFETs in­cluding revolutionary MDmes h™ products.

3

1

TO-220 TO-220FP

D2PAK

3

2

1

I2PAK

INTERNAL SCHEMATIC DIAGRAM

3

2

1

APPLICATIONS

■ HIGH CURRENT, HIGH S PEED SWITCHING

■ IDEAL FOR OFF-LINE POWER SUPPLIES,

ADAPTORS AND PFC

■ LI GHTING

ORDERING INFORMATION

SALES TYPE MARKING PACKAGE PACKAGING

STP6NK60Z P6NK60Z TO-220 TUBE
STP6NK60ZFP P6NK60ZFP TO-220FP TUBE
STB6NK60ZT4 B6NK60Z

STB6NK60Z-1 B6NK60Z

2

PAK

D

2

I

PAK

TAPE & REEL

TUBE

1/13April 2003

STP6NK60Z - STP6NK60ZFP - STB6NK 60Z - STB 6NK60Z -1

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

STP6NK60Z
STB6NK60Z

STB6NK60Z-1

V

DS

V

DGR

V

GS

I

D

I

D

I

DM

P

TOT

Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)
Gate- source Voltage ± 30 V
Drain Current (continuous) at TC= 25°C
Drain Current (continuous) at TC= 100°C

()

Drain Current (pulsed) 24 24 (*) A
Total Dissipation at TC= 25°C

66(*)A

3.8 3.8 (*) A

110 32 W

Derating Factor 0.88 0.24 W/°C

V

ESD(G-S)

Gate source ESD(HBM-C=100pF, R=1.5KΩ) 3500 V

dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns

V

ISO

T

j

T

stg

() Pulse width limited by safe operating area
(1) I

≤6A, di/dt ≤200A/µs, VDD≤ V

SD

(*) Limited only by maximum temperature allowed

Insulation Withstand Voltage (DC) - 2500 V
Operating Junction Temperature

Storage Temperature

(BR)DSS,Tj≤TJMAX.

-55to150

-55to150

STP6NK60ZFP

600 V
600 V

°C
°C

THERMAL DATA

2

2

I

PAK

PAK /

TO-220FP

TO-220 / D

Rthj-case Thermal Resistance Junction-case Max 1.14 4.2 °C/W

Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W

T

l

Maximum Lead Temperature For Soldering Purpose

300 °C

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Unit

I

AR

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T

E

AS

Single Pulse Avalanche Energy
(starting T

max)

j

= 25 °C, ID=IAR,VDD=50V)

j

6A

210 mJ

GATE-SOURCE ZENER DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

BV

GSO

Gate-Source Breakdown

Igs=± 1mA (Open Drain) 30 V

Voltage

PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occas ionally be
applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and cost­effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoi d the usage
of external components.

2/13

STP6NK60Z - STP6NK60ZFP - STB 6NK60Z - STB6NK60Z-1

ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHE RWISE SPECIFIED)

ON/OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

Drain-source
Breakdown Voltage

I

DSS

I

GSS

V

GS(th)

R

DS(on)

Zero Gate Voltage
Drain Current (V

GS

=0)

Gate-body Leakage
Current (V

DS

=0)
Gate Threshold Voltage
Static Drain-source On

Resistance

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(1) Forward Transconductance VDS=8V,ID=3A 5 S

g

fs

Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance

(3) Equivalent Output

C

oss eq.

C

iss

C

oss

C

rss

Capacitance

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

Q
Q
Q

t

r

g
gs
gd

Turn-on Delay Time
Rise Time

Total Gate Charge
Gate-Source Charge
Gate-Drain Charge

ID=1mA,VGS= 0 600 V

V

= Max Rating

DS

VDS= Max Rating, TC= 125 °C
V

= ± 20V ±10 µA

GS

V

DS=VGS,ID

= 100µA

3 3.75 4.5 V

1

50

VGS=10V,ID=3A 1 1.2 Ω

=25V,f=1MHz,VGS= 0 905

V

DS

115

25

VGS=0V,VDS= 0V to 480V 56 pF

VDD=300V,ID=3A
RG= 4.7Ω VGS=10V

14
14

(Resistive Load see, Figure 3)

=480V,ID=6A,

V
V

DD
GS

=10V

33

6

46 nC

17

µA
µA

pF
pF
pF

ns
ns

nC
nC

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(off)

Turn-off Delay Time

t

f

Fall Time

VDD= 300 V, ID=3A
R

=4.7ΩVGS=10V

G

47
19

(Resistive Load see, Figure 3)

t

r(Voff)

t
t

Off-voltage Rise Time

f

c

Fall Time
Cross-over Time

= 480V, ID=6A,

V

DD

RG=4.7Ω, VGS= 10V
(Inductive Load see, Figure 5)

16
16
29

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

VSD(1)

t

rr

Q

rr

I

RRM

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

3. C

Source-drain Current

(2)

Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time

Reverse Recovery Charge
Reverse Recovery Current

is defined as a constant equivalent capacitance giving the same charging time as C

oss eq.

.

V

DSS

ISD= 6 A, VGS=0
I

SD

VDD=50V,Tj= 150°C
(see test circuit, Figure 5)

= 6 A, di/dt = 100A/µs

445

2.7
12

when VDSincreases from 0 to 80%

oss

6

24

1.6 V

ns
ns

ns
ns
ns

A
A

ns

µC

A

3/13

STP6NK60Z - STP6NK60ZFP - STB6NK 60Z - STB 6NK60Z -1

SafeOperatingAreaforTO-220/D2PAK /I2PAK

ThermalImpedance forTO-220 /D2PAK/I2PAK

Safe Operating Area for TO-220FP

Thermal Impedance for TO-220FP

4/13

Transfer CharacteristicsOutput Characteristics

STP6NK60Z - STP6NK60ZFP - STB 6NK60Z - STB6NK60Z-1

Transconductance

Gate Charge vs Gate-so urc e V oltage

Static Drain-source On Resistance

Capacitance Variations

Normalized Gate Threshold Voltage vs Temp.

Normalized On Resistance vs Temperature

5/13

STP6NK60Z - STP6NK60ZFP - STB6NK 60Z - STB 6NK60Z -1

Source-drain Diode Forward Characteristics Normalized BVDSS vs Temperature

6/13

STP6NK60Z - STP6NK60ZFP - STB 6NK60Z - STB6NK60Z-1

Fig. 2: Unclamped Inductive W av eformFig. 1: Unclamped Inductive Load Test Circuit

Fig. 3: Switching Times Test Circuit For

Resistive Load

Fig. 5: Test Circuit For Inductive L oad Switching
And Diode Recovery Times

Fig. 4: Gate Charge test Circuit

7/13

STP6NK60Z - STP6NK60ZFP - STB6NK 60Z - STB 6NK60Z -1

E

P011C

TO-220 MECHANICAL DATA

DIM.

A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107

D1 1.27 0.050

E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067

G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154

DIA. 3.75 3.85 0.147 0.151

MIN. TYP. MAX. MIN. TYP. MAX.

mm inch

A

C

D

8/13

L5

Dia.

L7

D1

L6

L2

L9

F1

G1

F

H2

G

F2

L4

STP6NK60Z - STP6NK60ZFP - STB 6NK60Z - STB6NK60Z-1

TO-220FP MECHANICAL DATA

DIM.

A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106

D 2.5 2.75 0.098 0.108

E 0.45 0.7 0.017 0.027

F 0.75 1 0.030 0.039
F1 1.15 1.5 0.045 0.067
F2 1.15 1.5 0.045 0.067

G 4.95 5.2 0.195 0.204

G1 2.4 2.7 0.094 0.106

H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 .0385 0.417
L5 2.9 3.6 0.114 0.141
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366

Ø 3 3.2 0.118 0.126

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

E

A

D

B

L3

L6

L7

¯

F1

F

G1

H

G

F2

123

L2

L5

L4

9/13

STP6NK60Z - STP6NK60ZFP - STB6NK 60Z - STB 6NK60Z -1

P011P5/E

TO-262 (I2PAK) MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181

A1 2.49 2.69 0.098 0.106

B 0.7 0.93 0.027 0.036

B2 1.14 1.7 0.044 0.067

C 0.45 0.6 0.017 0.023

C2 1.23 1.36 0.048 0.053

D 8.95 9.35 0.352 0.368

e 2.4 2.7 0.094 0.106

E 10 10.4 0.393 0.409

L 13.1 13.6 0.515 0.531
L1 3.48 3.78 0.137 0.149
L2 1.27 1.4 0.050 0.055

mm inch

C

A

A1

10/13

C2

B2

B

e

E

L1

L2

D

L

STP6NK60Z - STP6NK60ZFP - STB 6NK60Z - STB6NK60Z-1

D2PAK MECHANICAL DATA

DIM.

MIN. TYP MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181
A1 2.49 2.69 0.098 0.106
A2 0.03 0.23 0.001 0.009

B 0.7 0.93 0.027 0.036
B2 1.14 1.7 0.044 0.067

C 0.45 0.6 0.017 0.023

C2 1.23 1.36 0.048 0.053

D 8.95 9.35 0.352 0.368

D1 8 0.315

E 10 10.4 0.393
E1 8.5 0.334

G 4.88 5.28 0.192 0.208

L 15 15.85 0.590 0.625
L2 1.27 1.4 0.050 0.055
L3 1.4 1.75 0.055 0.068

mm. inch

M 2.4 3.2 0.094 0.126

R 0.4 0.015
V2 0º 8º

3

11/13

1

STP6NK60Z - STP6NK60ZFP - STB6NK 60Z - STB 6NK60Z -1

D2PAK FOOTPRINT

TAPE AND REEL SHIPMENT (suffix ”T4”)*

TUBE SHIPMENT (no suffix)*

REEL MECHANICAL DATA

DIM.

A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0795
G 24.4 26.4 0.960 1.039
N 100 3.937
T 30.4 1.197

mm inch

MIN. MAX. MIN. MAX.

TAPE MECHANICAL DATA

DIM.

A0 10.5 10.7 0. 413 0.421
B0 15.7 15.9 0.618 0.626

D 1.5 1.6 0.059 0.063

D1 1.59 1.61 0.062 0.063

E 1.65 1.85 0.065 0.073

F 11.4 11.6 0. 449 0.456
K0 4.8 5.0 0.189 0.197
P0 3.9 4.1 0. 153 0.161
P1 11.9 12.1 0. 468 0.476
P2 1.9 2.1 0. 075 0.082

R 50 1.574

T 0.25 0.35 0.0098 0.0137

W 23.7 24.3 0.933 0.956

* on sales type

12/13

mm inch

MIN. MAX. MIN. MAX.

BASE QTY BULK QTY

1000 1000

STP6NK60Z - STP6NK60ZFP - STB 6NK60Z - STB6NK60Z-1

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of u se of such inf ormat ion nor for any in fring ement of p aten ts or othe r ri ghts of th ird p arties whic h may resul t f rom
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.

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