Datasheet STP6NC90ZFP, STP6NC90Z, STB6NC90Z-1, STB6NC90Z Datasheet (SGS Thomson Microelectronics)

STP6NC90Z - STP6NC90ZFP

STB6NC90Z - STB6NC90Z-1

N-CHANNEL 900V - 1.55Ω - 5.4A TO-220/FP/D²PAK/I²PAK

Zener-Protected PowerMESH™III MOSFET

TYPE V

STP6NC90Z
STP6NC90Z FP
STB6NC90Z
STB6NC90Z -1

■ TYPICAL R

■ EXTREMELY HIGH dv /dt AND CAPA BILITY GATE

DS

DSS

900 V
900 V
900 V
900 V

(on) = 1.55Ω

R

DS(on)

< 1.9 Ω
< 1.9 Ω
< 1.9 Ω
< 1.9 Ω

I

D

5.4 A

5.4 A

5.4 A

5.4 A

TO - SOURCE ZENER DIODES

■ 100% AVALANCHE TESTED

■ VERY LOW GATE INPUT RESISTANCE

DESCRIPTION

The third generation of MESH OVERLAY™ Power
MOSFETs for very high voltage exhibits unsurpassed
on-resistance per unit area while integrating back-to­back Zener diodes between gate and source. Such ar­rangement gives extra ESD capability with higher rug­gedness performance as request ed b y a l arge variety
of single-switch applications.

APPLICATIONS

■ SINGLE-ENDED SMPS IN MONITORS,

COMPUTER AND INDUSTRIAL APPLICATION

■ WELDING EQUIPMENT

TO-220

3

1

D²PAK

3

2

1

I²PAK

(Tabless TO-220)

TO-220FP

1

3

2

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

STP(B)6NC90Z(-1) STP6NC90ZFP

(1)

j

Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)

900 V
900 V

Gate- source Voltage ± 25 V

Drain Current (continuos) at TC = 25°C
Drain Current (continuos) at TC = 100°C

5.4 5.4(*) A

3.43 3.43(*) A
Drain Current (pulsed) 21 21 A
Total Dissipation at TC = 25°C

135 40 W
Derating Factor 1.08 0.32 W/°C
Gate-source Current ±50 mA
Gate source ESD(HBM-C=100pF, R=15KΩ) 3KV

Insulation Withstand Voltage (DC) -- 2000 V
Storage Temperature –65 to 150 °C
Max. Operating Junction Temperature 150 °C

(1)ISD ≤5.4A, di/dt ≤100A/µs, VDD ≤ V
(2).Limited only by maximum temperature allowed

(BR)DSS

, Tj ≤ T

JMAX

V

DS

V

DGR

V

GS

I

D

I

D

I

DM

P

TOT

I

GS

V

ESD(G-S)

dv/dt Peak Diode Recovery voltage slope 3 V/ns

V

ISO

T

stg

T

(•)Pu l se width limited by safe operating area

1/13July 2002

STP6NC90Z/STP6NC90ZFP/STB 6N C90Z/STB6NC90Z-1

THERMA L D ATA

TO-220 / D²PAK /

I²PAK

Rthj-case Thermal Resistance Junction-case Max 0.93 3.13 °C/W

Rthj-amb Thermal Resistance Junction-ambient Max 30 °C/W

T

Maximum Lead Temperature For Soldering Purpose 300 °C

l

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Unit

I

AR

E

AS

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T

max)

j

Single Pulse Avalanche Energy
(starting T

= 25 °C, ID = IAR, VDD = 50 V)

j

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

∆BV

(BR)DSS

Drain-source
Breakdown Voltage

/∆TJBreakdown Voltage Temp.

DSS

Coefficient

I

DSS

Zero Gate Voltage
Drain Current (V

I

GSS

Gate-body Leakage
Current (V

DS

= 0)

GS

= 0)

ID = 250 µA, VGS = 0 900 V

ID = 1 mA, VGS = 0 1 V/°C

V

= Max Rating

DS

V

= Max Rating, TC = 125 °C

DS

V

= ±20V ±10 µA

GS

TO-220FP

5.4 A

356 mJ

1µA

50 µA

ON (1)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

V

GS(th)

R

DS(on)

Gate Threshold Voltage
Static Drain-source On

= VGS, ID = 250µA

DS

VGS = 10V, ID = 3 A

345V

1.55 1.9 Ω

Resistance

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(1) Forward Transconductance VDS > I

g

fs

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance 150 pF
Reverse Transfer

Capacitance

I

D

V

=3A

DS

D(on)

x R

DS(on)max,

= 25V, f = 1 MHz, VGS = 0

5.7 S

2290 pF

15 pF

2/13

STP6NC90Z/STP6NC90ZFP/STB6NC90Z/STB6NC90Z-1

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

t

d(on)

Q
Q
Q

t

r

g
gs
gd

Turn-on Delay Time
Rise Time 8 ns
Total Gate Charge

Gate-Source Charge 13 nC
Gate-Drain Charge 15 nC

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

r(Voff)

t

t

f

c

Off-voltage Rise Time
Fall Time 11 ns
Cross-over Time 14 ns

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

VSD (1)

t

rr

Q

rr

I

RRM

Source-drain Current 5.4 A

(2)

Source-drain Current (pulsed) 21.6 A
Forward On Voltage
Reverse Recovery Time

Reverse Recovery Charge 7.14 µC
Reverse Recovery Current 21 A

= 450 V, ID = 3 A

DD

RG= 4.7Ω VGS = 10V
(see test circuit, Figure 3)

V

= 720V, ID = 6A,

DD

VGS = 10V

V

= 720V, ID = 6 A,

DD

RG=4.7Ω, V

GS

= 10V

(see test circuit, Figure 5)

ISD = 6 A, VGS = 0
I

= 6 A, di/dt = 100A/µs,

SD

VDD = 40 V, Tj = 150°C
(see test circuit, Figure 5)

24 ns

42 58.8 nC

10 ns

1.6 V

680 ns

GATE-SOURCE ZENER DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

BV

GSO

Gate-Source Breakdown

Igs=± 1mA (Open Drain) 25 V

Voltage

αT Voltage Thermal Coefficient T=25°C Note(3) 1.3

I

Rz Dynamic Resistance

Note: 1. Pulsed: Pu l se duration = 300 µs, duty cycle 1.5 %.

2. Pulse width li mited by safe operating ar ea.

3. ∆V

= αT (25°-T ) BV

BV

GSO

(25°)

= 50 mA, VGS = 0

D

90 Ω

10

-4

/°C

PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally
be applied from gat e to source. I n this respect the Zener voltage is appropriat e to ach ieve an effi cient
and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid
the usage of external components.

3/13

STP6NC90Z/STP6NC90ZFP/STB 6N C90Z/STB6NC90Z-1

Safe Operating Area For TO-220/D²PAK/I²PAK Safe Operating Area For TO-220FP

Thermal Impedance For TO-220/D²PAK/I²PAK Thermal Impedance For TO-220FP

Output Characteristics

4/13

Transfer Characteristics

STP6NC90Z/STP6NC90ZFP/STB6NC90Z/STB6NC90Z-1

Static Drain-source On ResistanceTransconductance

Gate Charge vs Gate-source Voltage Capacitance Variation s

Normalized Gate Threshold Voltage vs Temp. Normalized On Resistance vs Temperature

5/13

STP6NC90Z/STP6NC90ZFP/STB 6N C90Z/STB6NC90Z-1

Source-drain Diode Forward Characteristics

6/13

STP6NC90Z/STP6NC90ZFP/STB6NC90Z/STB6NC90Z-1

Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit

Fig. 3: Switching Times Test Circuits For

Resistive Load

Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times

Fig. 4: Gate Charge test Circuit

7/13

STP6NC90Z/STP6NC90ZFP/STB 6N C90Z/STB6NC90Z-1

E

TO-220 MECHANICAL DATA

DIM.

A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107

D1 1.27 0.050

E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067

G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154

DIA. 3.75 3.85 0.147 0.151

MIN. TYP. MAX. MIN. TYP. MAX.

mm inch

A

C

D

8/13

L5

Dia.

L7

D1

L6

L2

L9

F1

G1

F

H2

G

F2

L4

P011C

STP6NC90Z/STP6NC90ZFP/STB6NC90Z/STB6NC90Z-1

TO-220FP MECHANICAL DATA

DIM.

A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106

D 2.5 2.75 0.098 0.108

E 0.45 0.7 0.017 0.027

F 0.75 1 0.030 0.039
F1 1.15 1.5 0.045 0.067
F2 1.15 1.5 0.045 0.067

G 4.95 5.2 0.195 0.204

G1 2.4 2.7 0.094 0.106

H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L5 2.9 3.6 0.114 0.141
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366

Ø 3 3.2 0.118 0.126

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

E

A

D

B

L3

L6

L7

¯

F1

F

G1

H

G

F2

123

L2

L5

L4

9/13

STP6NC90Z/STP6NC90ZFP/STB 6N C90Z/STB6NC90Z-1

TO-262 (I2PAK) MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181

A1 2.49 2.69 0.098 0.106

B 0.7 0.93 0.027 0.036

B2 1.14 1.7 0.044 0.067

C 0.45 0.6 0.017 0.023

C2 1.23 1.36 0.048 0.053

D 8.95 9.35 0.352 0.368
e 2.4 2.7 0.094 0.106
E 10 10.4 0.393 0.409

L 13.1 13.6 0.515 0.531
L1 3.48 3.78 0.137 0.149
L2 1.27 1.4 0.050 0.055

mm inch

C

10/13

A

A1

C2

B2

B

e

E

L1

L2

D

L

P011P5/E

STP6NC90Z/STP6NC90ZFP/STB6NC90Z/STB6NC90Z-1

2

D

PAK MECHANICAL DATA

DIM.

MIN. TYP MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181
A1 2.49 2.69 0.098 0.106
A2 0.03 0.23 0.001 0.009

B 0.7 0.93 0.027 0.036
B2 1.14 1.7 0.044 0.067

C 0.45 0.6 0.017 0.023

C2 1.23 1.36 0.048 0.053

D 8.95 9.35 0.352 0.368

D1 8 0.315

E 10 10.4 0.393

E1 8.5 0.334

G 4.88 5.28 0.192 0.208

L 15 15.85 0.590 0.625
L2 1.27 1.4 0.050 0.055
L3 1.4 1.75 0.055 0.068

mm. inch

M 2.4 3.2 0.094 0.126
R 0.4 0.015

V2 0º8º

3

11/13

1

STP6NC90Z/STP6NC90ZFP/STB 6N C90Z/STB6NC90Z-1

D2PAK FOOTPRINT

TAPE AN D REEL SHIPMENT (suffix ”T4”)*

TUBE SHIPMENT (no suffix)*

REEL MECHANICAL DATA

DIM.

A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0795
G 24.4 26.4 0.960 1.039
N 100 3.937
T 30.4 1.197

mm inch

MIN. MAX. MIN. MAX.

TAPE MECHANICAL DATA

DIM.

A0 10.5 10.7 0.413 0.421
B0 15.7 15.9 0.618 0.626

D 1.5 1.6 0.059 0.063

D1 1.59 1.61 0.062 0.063

E 1.65 1.85 0.065 0.073

F 11.4 11.6 0.449 0.456
K0 4.8 5.0 0.189 0.197
P0 3.9 4.1 0.153 0.161
P1 11.9 12.1 0.468 0.476
P2 1.9 2.1 0.075 0.082

R 50 1.574

T 0.25 0.35 0.0098 0.0137

W 23.7 24.3 0.933 0.956

* on sales type

12/13

mm inch

MIN. MAX. MIN. MAX.

BASE QTY BULK QTY

1000 1000

STP6NC90Z/STP6NC90ZFP/STB6NC90Z/STB6NC90Z-1

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for t he
consequences of use of su ch in formation nor for any in fringement of paten ts or o ther rights of third parties w hich may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously suppli ed. STMi croelect ronics pr oducts are not author ized for use as c ritical component s in li fe suppo rt devi ces or
systems without express written approval of STMicroelectronics.

Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco

© The ST logo is a registered trademark of STMicroelectronics

© 2002 STMicroelectronics - Printed in Italy - All Rights Reserved

Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.

STMicroelectronics GROUP OF COMPANIES

© http://www.st.com

13/13