Page 1
STB6NA80
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
TYPE V
DSS
R
DS(on )
I
D
STB 6NA80 800 V < 1.9 Ω 5.7 A
TYPICALR
± 30V GATE TOSOURCE VOLTAGE RATING
100% AVALANCHETESTED
REPETITIVEAVALANCHEDATAAT100
LOW INTRINSIC CAPACITANCES
GATECHARGE MINIMIZED
REDUCEDTHRESHOLD VOLTAGESPREAD
THROUGH-HOLEI2PAK (TO-262) POWER
DS(on)
= 1.68 Ω
o
C
PACKAGEIN TUBE(SUFFIX ”-1”)
SURFACE-MOUNTING D2PACK (TO-263)
POWERPACKAGEIN TUBE(NO SUFFIX)
OR IN TAPE & REEL (SUFFIX ”T4”)
APPLICATIONS
HIGH CURRENT, HIGH SPEED SWITCHING
SWITCHMODE POWER SUPPLIES(SMPS)
DC-AC CONVERTERSFOR WELDING
EQUIPMENTANDUNINTERRUPTIBLE
POWERSUPPLIESAND MOTOR DRIVE
3
2
1
I2PAK
TO-262
1
D2PAK
TO-263
INTERNAL SCHEMATIC DIAGRAM
3
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Val ue Uni t
V
V
V
I
DM
P
T
(•) Pulsewidth limitedby safe operating area
October 1995
Drain-source Voltage (VGS= 0) 800 V
DS
Drain- gate Voltage ( RGS=20kΩ) 800 V
DGR
Gate-s ource Voltage ± 30 V
GS
I
Drain Current (continuous) at Tc=25oC5.7A
D
I
Drain Current (continuous) at Tc=100oC3.6A
D
(•) Drain Current (pulsed) 23 A
Tot al Dissipat ion at Tc=25oC 125 W
tot
Derat ing Fa ct or 1 W/
Sto rage Tem perature -65 t o 15 0
stg
T
Max. Operat ing Juncti on Temper at u r e 150
j
o
o
o
C
C
C
1/10
Page 2
STB6NA80
THERMAL DATA
R
thj-case
R
thj-amb
R
thc-sink
T
AVALANCHE CHARACTERISTICS
Symb ol Param et er Max V al ue Uni t
I
AR
E
E
I
AR
Therm al Resistanc e Juncti on-c ase Max
Therm al Resistanc e Juncti on-am b ient Max
Therm al Resistanc e Case-sink Ty p
Maxim um Lead Tem p era t ure For So ldering Purpose
l
Avalanc h e Current , Repet it ive or Not -Repetiti ve
(pulse width limited by T
Single Pulse Avalanche Energy
AS
(starting T
Repetit ive Avalanche Energy
AR
=25oC, ID=IAR,VDD=50V)
j
(pulse width limited by T
max, δ <1%)
j
max, δ <1%)
j
Avalanc h e Current , Repet it ive or Not -Repetiti ve
=100oC, pulse wi dt h limited by Tjmax, δ <1%)
(T
c
1
62.5
0.5
300
5.7 A
165 mJ
6.5 mJ
3.6 A
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
OFF
Symb ol Par amete r Test Cond i ti ons Min. Typ . Max. Uni t
V
(BR)DSS
Drain-s ource
ID= 250 µ AVGS=0 800 V
Break down Vol t age
I
DSS
I
GSS
Zero G ate Voltage
Drain Current (V
GS
Gat e- body Leakage
Current (V
DS
=0)
=0)
V
= Max Rating
DS
= Max Rating x 0.8 Tc=125oC
V
DS
V
= ± 30 V ± 100 nA
GS
250
1000µAµA
ON (∗)
Symb ol Par amete r Test Cond i ti ons Min. Typ . Max. Uni t
V
GS(t h)
R
DS(on)
I
D(on)
Gat e T hreshold Voltage VDS=VGSID= 250 µA 2.25 3 3.75 V
Sta t ic Drain-sour ce O n
Resistance
VGS= 10V ID=3A
=10V ID=3A Tc=100oC
V
GS
On S t ate Drain Current VDS>I
D(on)xRDS(on)max
1.68 1.9
3.8
6A
VGS=10V
DYNAMIC
Symb ol Par amete r Test Cond i ti ons Min. Typ . Max. Uni t
g
(∗)Forward
fs
Tra nsconductanc e
C
C
C
Input Capacitance
iss
Out put Capacitanc e
oss
Reverse Transfer
rss
Capacit an c e
VDS>I
D(on)xRDS(on)maxID
=3A 4 6.1 S
VDS=25V f=1MHz VGS= 0 1330
160
40
1750
210
55
Ω
Ω
pF
pF
pF
2/10
Page 3
STB6NA80
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symb ol Par amete r Test Cond i ti ons Min. Typ . Max. Uni t
t
d(on)
t
r
Turn-on Time
Rise Time
VDD= 400 V ID=3A
=47 Ω VGS=10V
R
G
(see tes t circuit, figure 3)
(di/dt)
Turn-on Current Slope VDD= 640 V ID=6A
on
=47 Ω VGS=10V
R
G
(see tes t circuit, f igure 5)
Q
Q
Q
Total Ga te Charge
g
Gat e- Source C har ge
gs
Gate-Drain Charge
gd
VDD=640V ID=6A VGS=10V 58
SWITCHING OFF
Symb ol Par amete r Test Cond i ti ons Min. Typ . Max. Uni t
t
r(Voff)
t
Off-volt ag e Rise Time
t
Fall Time
f
Cross-over Time
c
VDD= 640 V ID=6A
=47 Ω VGS=10V
R
G
(see tes t circuit, figure 5)
SOURCEDRAIN DIODE
35
95
45
125
170 A/µs
78 nC
8
27
90
25
125
120
35
165
ns
ns
nC
nC
ns
ns
ns
Symb ol Par amete r Test Cond i ti ons Min. Typ . Max. Uni t
I
SDM
I
SD
Source-drain C urr ent
(•)
Source-drain C urr ent
5.7
23
(pulsed)
(∗) For ward On Voltage ISD=6A VGS=0 1.6 V
V
SD
t
Q
Revers e Recovery
rr
Time
Revers e Recovery
rr
ISD= 6 A di/dt = 100 A/µs
=100V Tj=150oC
V
DD
(see tes t circuit, figure 5)
850
15
Charge
I
RRM
Revers e Recovery
35
Current
(∗) Pulsed: Pulse duration =300 µs,duty cycle 1.5 %
(•) Pulse widthlimitedby safeoperating area
Safe Operating Area ThermalImpedance
A
A
ns
µC
A
3/10
Page 4
STB6NA80
Derating Curve
TransferCharacteristics
Output Characteristics
Transconductance
Static Drain-sourceOn Resistance
4/10
Gate Charge vs Gate-source Voltage
Page 5
STB6NA80
CapacitanceVariations
NormalizedOn Resistance vs Temperature
NormalizedGate Threshold Voltage vs
Temperature
Turn-onCurrent Slope
Turn-offDrain-source VoltageSlope
Cross-overTime
5/10
Page 6
STB6NA80
SwitchingSafe OperatingArea
Source-drainDiode Forward Characteristics
AccidentalOverload Area
Fig. 1: UnclampedInductive Load Test Circuit
6/10
Fig. 2: Unclamped Inductive Waveform
Page 7
STB6NA80
Fig. 3: SwitchingTimes Test Circuits For
ResistiveLoad
Fig. 5: TestCircuit For InductiveLoad Switching
And DIodeRecoveryTimes
Fig. 4: GateCharge test Circuit
7/10
Page 8
STB6NA80
TO-262 (I2PAK) MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.3 4.6 0.169 0.181
A1 2.49 2.69 0.098 0.106
B 0.7 0.93 0.027 0.036
B1 1.2 1.38 0.047 0.054
B2 1.25 1.4 0.049 0.055
C 0.45 0.6 0.017 0.023
C2 1.21 1.36 0.047 0.053
D 9 9.35 0.354 0.368
e 2.44 2.64 0.096 0.104
E 10 10.28 0.393 0.404
L 13.2 13.5 0.519 0.531
L1 3.48 3.78 0.137 0.149
L2 1.27 1.37 0.050 0.054
mm inch
8/10
C
A
A1
C2
B2
B
e
E
L1
L2
D
L
Page 9
TO-263 (D2PAK) MECHANICAL DATA
STB6NA80
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.3 4.6 0.169 0.181
A1 2.49 2.69 0.098 0.106
B 0.7 0.93 0.027 0.036
B2 1.25 1.4 0.049 0.055
C 0.45 0.6 0.017 0.023
C2 1.21 1.36 0.047 0.053
D 9 9.35 0.354 0.368
E 10 10.28 0.393 0.404
G 4.88 5.28 0.192 0.208
L 15 15.85 0.590 0.624
L2 1.27 1.37 0.050 0.054
L3 1.4 1.75 0.055 0.068
mm inch
E
A
C2
L2
D
L
L3
B2
B
A1
C
G
9/10
Page 10
STB6NA80
Information furnished is believed to be accurateand reliable. However,SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor forany infringement ofpatents orother rights of thirdparties which may results fromits use. No
licenseis granted by implication orotherwise underany patent or patentrights of SGS-THOMSONMicroelectronics. Specifications mentioned
in this publicationare subjectto change without notice.This publication supersedes andreplaces all informationpreviously supplied.
SGS-THOMSON Microelectronicsproductsarenotauthorized foruse as criticalcomponents in lifesupportdevices or systems without express
writtenapproval of SGS-THOMSONMicroelectonics.
1995 SGS-THOMSONMicroelectronics - All RightsReserved
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