Page 1
1/9October 2001
STB6LNC60
N-CHANNEL 600V - 1Ω - 5.8A D2PAK
PowerMesh™II MOSFET
(1)ISD ≤5.8A, di/dt ≤100A/µs, VDD ≤ V
(BR)DSS
, Tj ≤ T
JMAX.
INTERNAL SCHEMATIC DIAGRAM
■ TYPICAL R
DS
(on) = 1.0 Ω
■ EXTREMELY HIGH dv /d t CAPABILITY
■ 100% AVALANCHE TESTED
■ NEW HIGH VOLTAGE BENCHMARK
■ GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESH
™II is the evolution of the first
generation of MESH OVERLAY
™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lea ding edge for what concerns switching speed, gate
charge and ruggedness.
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITH MODE POWER SUPPLI ES (SMPS)
■ DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVES
ABSOLUTE MAXIMUM RATINGS
(•)Pu l se width limite d by safe operat i ng area
(*) Limited only by maximum temperature allowed
TYPE V
DSS
R
DS(on)
I
D
STB6LNC60 600 V < 1.25 Ω 5.8 A
Symbol Parameter Value Unit
V
DS
Drain-source Voltage (VGS = 0)
600 V
V
DGR
Drain-gate Voltage (RGS = 20 kΩ)
600 V
V
GS
Gate- source Voltage ±30 V
I
D
Drain Current (continuos) at TC = 25°C
5.8 A
I
D
Drain Current (continuos) at TC = 100°C
3.65 A
I
DM
(●)
Drain Current (pulsed) 23.2 A
P
TOT
Total Dissipation at TC = 25°C
100 W
Derating Factor 0.8 W/°C
dv/dt (1) Peak Diode Recovery voltage slope 3 V/ns
T
stg
Storage Temperature
–65 to 150 °C
T
j
Max. Operating Junction Temperature
D2PAK
1
3
Page 2
STB6LNC60
2/9
THERMA L D ATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
ON
(1)
DYNAMIC
Rthj-case Thermal Resistance Junction-case Max 1.25 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
T
l
Maximum Lead Temperature For Soldering Purpose 300 °C
Symbol Parameter Max Value Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
5.8 A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, ID = IAR, VDD = 50 V)
300 mJ
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0 600 V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
1µA
V
DS
= Max Rating, TC = 125 °C
50 µA
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= ±30V ±100 nA
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= VGS, ID = 250µA
234V
R
DS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 3 A
1.0 1.25 Ω
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
fs
(1) Forward Transconductance VDS > I
D(on)
x R
DS(on)max,
I
D
=3A
6S
C
iss
Input Capacitance
V
DS
= 25V, f = 1 MHz, VGS = 0
830 pF
C
oss
Output Capacitance 120 pF
C
rss
Reverse Transfer
Capacitance
15.5 pF
Page 3
3/9
STB6LNC60
Thermal Impede nce
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pu l se duration = 300 µs, duty cycle 1.5 %.
2. Pulse width li mited by safe operating area .
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
Turn-on Delay Time
V
DD
= 300 V, ID = 3 A
RG= 4.7Ω VGS = 10 V
(see test circuit, Figure 3)
14.5 ns
t
r
Rise Time 15.5 ns
Q
g
Total Gate Charge
V
DD
= 480V, ID = 6 A,
VGS = 10V
28 39 nC
Q
gs
Gate-Source Charge 4.8 nC
Q
gd
Gate-Drain Charge 17.5 nC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
Off-voltage Rise Time
V
DD
= 480V, ID = 6 A,
RG=4.7Ω, V
GS
= 10V
(see test circuit, Figure 5)
9ns
t
f
Fall Time 7.5 ns
t
c
Cross-over Time 16 ns
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
Source-drain Current 5.8 A
I
SDM
(2)
Source-drain Current (pulsed) 23.2 A
VSD (1)
Forward On Voltage
ISD = 6 A, VGS = 0
1.6 V
t
rr
Reverse Recovery Time
I
SD
=6 A, di/dt = 100A/µs
VDD = 100V, Tj = 150°C
(see test circuit, Figure 5)
450 ns
Q
rr
Reverse Recovery Charge 2.4 µC
I
RRM
Reverse Recovery Current 10.6 A
Safe Operating Area
Page 4
STB6LNC60
4/9
Transconductance Static Drain-source On Resistance
Output Characteristics Transfer Characteristics
Gate Charge vs Gate-source Voltage Capacitance Variations
Page 5
5/9
STB6LNC60
Source-drain Diode Forw ard Ch aracteristi cs
Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature
Page 6
STB6LNC60
6/9
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
Fig. 4: Gate Charge test Circuit
Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuit For
Resistive Load
Page 7
7/9
STB6LNC60
1
DIM.
mm. inch
MIN. TYP MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
A1 2.49 2.69 0.098 0.106
A2 0.03 0.23 0.001 0.009
B 0.7 0.93 0.027 0.036
B2 1.14 1.7 0.044 0.067
C 0.45 0.6 0.017 0.023
C2 1.23 1.36 0.048 0.053
D 8.95 9.35 0.352 0.368
D1 8 0.315
E 10 10.4 0.393
E1 8.5 0.334
G 4.88 5.28 0.192 0.208
L 15 15.85 0.590 0.625
L2 1.27 1.4 0.050 0.055
L3 1.4 1.75 0.055 0.068
M 2.4 3.2 0.094 0.126
R 0.4 0.015
V2 0º8º
D
2
PAK MECHANICAL DATA
3
Page 8
STB6LNC60
8/9
TAPE AND REEL SHIPMENT (suffix ”T4”)*
TUBE SHIPMENT (no suffix)*
D2PAK FOOTPRINT
* on sales type
DIM.
mm inch
MIN. MAX. MIN. MAX.
A 330 12.992
B 1.5 0 .059
C 12.8 13.2 0.504 0.520
D 20.2 0795
G 24.4 26.4 0.960 1.039
N 100 3.937
T 30.4 1.197
BASE QTY BULK QTY
1000 1000
REEL MECHANICAL DATA
DIM.
mm inch
MIN. MAX. MIN. MAX.
A0 10.5 10.7 0.413 0.421
B0 15.7 15.9 0.618 0.626
D 1.5 1.6 0.059 0.063
D1 1.59 1.61 0.062 0.063
E 1.65 1.85 0.065 0.073
F 11.4 11.6 0.449 0.456
K0 4.8 5.0 0.189 0.197
P0 3.9 4.1 0.153 0.161
P1 11.9 12.1 0.468 0.476
P2 1.9 2.1 0.075 0.082
R 50 1.574
T 0.25 0.35 0.0098 0.0137
W 23.7 24.3 0.933 0.956
TAPE MECHANICAL DATA
Page 9
9/9
STB6LNC60
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such informa tion n or for an y infring ement of patent s or other rig hts of third part ies which may resu lt from its use . No l i cen se i s
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical compo nents in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2000 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco -
Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
http://www.st.com
Loading...