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STB60NF06
N-CHANNEL 60V - 0.014Ω - 60A D2PAK
STripFET™ POWER MOSFET
TYPE V
DSS
STB60NF06 60V < 0.016
■ TYPICAL R
■ EXCEPTIONAL dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ APPLICATION ORIENTED
(on) = 0.014Ω
DS
R
DS(on)
I
D
Ω
60A
CHARACTERIZATION
■ ADD SUFFIX “T4” FOR ORDERING IN TAPE &
REEL
DESCRIPTION
This Power Mosfet series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and
gate charge. It is therefore suitable as primary
switch in advanced high-efficiency isolated D C-DC
converters for T el ecom and Computer application. It
is also intended for any application with low gate
charge drive requirements.
APPLICATIONS
■ HIGH-EFFICIENCY DC-DC CONVERTERS
■ UPS AND MOTOR CONTROL
■ AUTOMOTIVE
3
1
D2PAK
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
P
TOT
dv/dt (1) Peak Diode Recovery voltage slope 4 V/ns
T
stg
T
j
(●) Pulse width limited by safe operating area
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
60 V
60 V
Gate- source Voltage ± 20 V
Drain Current (continuos) at TC = 25°C
Drain Current (continuos) at TC = 100°C
(●)
Drain Current (pulsed) 240 A
Total Dissipation at TC = 25°C
60 A
42 A
110 W
Derating Factor 0.73 W/°C
Storage Temperature –65 to 175 °C
Max. Operating Junction Temperature 175 °C
(1) I
≤
60A, di/dt≤400 A/µs, V
SD
≤
24V, Tj≤T
DD
jMAX
1/9February 2001
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STB60NF06
THERMA L D ATA
Rthj-case Thermal Resistance Junction-case Max 1.36 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
T
l
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
AS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
Maximum Lead Temperature For Soldering Purpose 300 °C
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
max)
j
Single Pulse Avalanche Energy
(starting T
Drain-source
= 25 °C, ID = IAR, VDD = 30 V)
j
ID = 250 µA, VGS = 0 60 V
30 A
360 mJ
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
V
= Max Rating
DS
V
= Max Rating, TC = 125 °C
DS
V
= ± 20V ±100 nA
GS
1µA
10 µA
ON
(1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-source On
V
= VGS, ID = 250µA
DS
VGS = 10V, ID = 30 A
24V
0.014 0.016
Resistance
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS =15V , ID= 30 A 20 S
g
fs
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 360 pF
Reverse Transfer
Capacitance
V
= 25V, f = 1 MHz, VGS = 0
DS
1810 pF
125 pF
Ω
2/9
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STB60NF06
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
t
d(on)
Q
Q
Q
t
r
g
gs
gd
Turn-on Delay Time
Rise Time 108 ns
Total Gate Charge VDD = 48V, ID =60A,VGS = 10V 49
Gate-Source Charge 18 nC
Gate-Drain Charge 14 nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
t
d(off)
t
f
t
f
t
c
Turn-off-Delay Time
Fall Time
Off-voltage Rise Time
Fall Time
Cross-over Time
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD (2)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pu l se duration = 300 µs, duty c ycle 1.5 %.
2. Pulse width li mited by safe operating area.
Source-drain Current 60 A
(1)
Source-drain Current (pulsed) 240 A
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
= 30 V, ID = 30 A
DD
R
= 4.7Ω VGS = 10V
G
(see test circuit, Figure 3)
VDD = 30 V, ID = 30 A,
RG=4.7Ω, V
GS
= 10V
(see test circuit, Figure 3)
Vclamp =48V, I
RG=4.7Ω, V
D
GS
= 60 A
= 10V
(see test circuit, Figure 3)
ISD = 60 A, VGS = 0
= 60 A, di/dt = 100A/µs,
I
SD
VDD = 25V, Tj = 150°C
(see test circuit, Figure 5)
16 ns
66
43
20
40
12
21
1.3 V
73
182
5
nC
ns
ns
ns
ns
ns
ns
nC
A
Safe Operating Area Ther m al Impede n c e
3/9
Page 4
STB60NF06
Output Characteristics
Transconductance Static Drain-source On Resistance
Transfer Characteristics
Gate Charge vs Gate-source Voltage
4/9
Capacitance Variations
Page 5
STB60NF06
Normalized Gate Threshold Voltage vs
Temperature
Source-drain Diode Forw ard Ch aracteristi cs
Normalized On Resistance vs Temperatur e
5/9
Page 6
STB60NF06
Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuit For
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
Fig. 4: Gate Charge test Circuit
6/9
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2
D
PAK MECH ANICAL DATA
STB60NF06
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
A1 2.49 2.69 0.098 0.106
A2 0.03 0.23 0.001 0.009
B 0.7 0.93 0.027 0.036
B2 1.14 1.7 0.044 0.067
C 0.45 0.6 0.017 0.023
C2 1.23 1.36 0.048 0.053
D 8.95 9.35 0.352 0.368
D1 8 0.315
E 10 10.4 0.393
E1 8.5 0.334
G 4.88 5.28 0.192 0.208
L 15 15.85 0.590 0.625
L2 1.27 1.4 0.050 0.055
L3 1.4 1.75 0.055 0.068
mm. inch
M 2.4 3.2 0.094 0.126
R 0.4 0.015
V2 0º8º
3
7/9
1
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STB60NF06
D2PAK FOOTPRINT
TAPE AND REEL SHIPMENT (suffix ”T4”)*
TUBE SHIPMENT (no suffix)*
REEL MECHANICAL DATA
DIM.
A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0795
G 24.4 26.4 0.960 1.039
N 100 3.937
T 30.4 1.197
mm inch
MIN. MAX. MIN. MAX.
TAPE MECHANICAL DATA
DIM.
A0 10.5 10.7 0.413 0.421
B0 15.7 15.9 0.618 0.626
D 1.5 1.6 0.059 0.063
D1 1.59 1.61 0.062 0.063
E 1.65 1.85 0.065 0.073
F 11.4 11.6 0.449 0.456
K0 4.8 5.0 0.189 0.197
P0 3.9 4.1 0.153 0.161
P1 11.9 12.1 0.468 0.476
P2 1.9 2.1 0.075 0.082
R 50 1.574
T 0.25 0.35 0.0098 0.0137
W 23.7 24.3 0.933 0.956
* on s ales type
8/9
mm inch
MIN. MAX. MIN. MAX.
BASE QTY BULK QTY
1000 1000
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STB60NF06
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such informa tion n or for an y infring ement of patent s or other rig hts of third part ies which may resu lt from its use . No l i cen se i s
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical compo nents in life support devices or systems without express written approval of STMicroelectronics.
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The ST logo is a trademark of STMicroelectronics
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STMicroelectronics GROUP OF COMPANIES
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