Datasheet STB60NE06-16 Datasheet (SGS Thomson Microelectronics)

STB60NE06-16

N - CHANNEL ENHANCEMENT MODE

” SINGLE FEATURE SIZE ” POWER MOSFET

TYPE V

DSS

R

DS(on)

I

D

ST B60NE 06-1 60 V < 0.016 Ω 60 A

■ TYPICALR

■ EXCEPTIONALdV/dt CAPABILTY

■ 100% AVALANCHETESTED

■ LOW GATE CHARGE 100

■ HIGH dV/dt CAPABILITY

■ APPLICATIONORIENTED

DS(on)

=0.013 Ω

o

C

CHARACTERIZATION

■ FOR THROUGH-HOLE VERSIONCONTACT

SALESOFFICE

DESCRIPTION

This Power Mosfet is the latest development of
SGS-THOMSONunique ” Single FeatureSize”
strip-based process. The resulting transistor
shows extremelyhigh packing density for low on­resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark­able manufacturingreproducibility.

APPLICATIONS

■ DC MOTOR CONTROL

■ DC-DC& DC-AC CONVERTERS

■ SYNCHRONOUSRECTIFICATION

3

1

D2PAK

TO-263

(Suffix”T4”)

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

V

DGR

V

I

DM

P

dV/ dt(

T

(•) Pulsewidth limitedby safe operatingarea (1)ISD≤ 60 A,di/dt ≤ 200 A/µs, VDD

January 1998

Drain-s ou r ce V olt ag e (VGS=0) 60 V

DS

Drain- gate Voltag e (RGS=20kΩ)
Gate-source Voltage ± 20 V

GS

I

Drain Curren t (cont inu ous) at Tc=25oC60A

D

I

Drain Curren t (cont inu ous) at Tc=100oC42A

D

60 V

(•) Drain Curren t (pulsed) 240 A

Tot al Di s sipa t ion at Tc=25oC 150 W

tot

Derating Factor 1 W/

1) Pea k Diode Recovery vo lta ge slope 6 V/ns

Storage Temperature -65 to 175

stg

T

Max. Operat ing Junct ion Tempe rature 175

j

≤ V

(BR)DSS,TJ

≤

T

JMAX

o

C

o

C

o

C

1/9

STB60NE06-16

THERMAL DATA

R

thj-case

Rthj-amb

R

thc-sin k

T

Ther mal Resist ance Junctio n- case Max
Ther mal Resist ance Junctio n- ambient Max
Ther mal Resist ance Case-si nk Ty p
Maximum Lead T e mpera t ure For Sold eri ng P urp os e

l

1

62.5

0.5

300

AVALANCHE CHARACTERISTICS

Symbol Para met e r Max Valu e Unit

I

AR

E

Avalanch e Curre nt , Repet it i v e or Not - Re petit ive
(pulse w idth limited by T

Single Pulse Avalanche Energy

AS

(starting T

=25oC, ID=IAR,VDD=25V)

j

max, δ <1%)

j

ELECTRICAL CHARACTERISTICS (T

=25oC unlessotherwisespecified)

case

60 A

350 mJ

OFF

Symbol Parameter Test Cond ition s Min. Typ. Max. Unit

V

(BR)DSS

I

DSS

I

GSS

Drain-sou rc e
Breakdown Voltage

Zer o Gate Vo lt age
Drain Cur rent (V

GS

Gat e-body Leaka ge
Current (V

DS

=0)

=0)

=250µAVGS=0

I

D

V

=MaxRating

DS

=MaxRating Tc=125

V

DS

o

C

= ± 20 V

V

GS

60 V

1

10

± 100 nA

o

C/W

o

C/W

oC/W

o

C

µA
µA

ON (∗)

Symbol Parameter Test Cond ition s Min. Typ. Max. Unit

V

GS(th )

Gate Threshold

V

DS=VGSID

=250µA

234V

Voltage

R

DS(on)

Stati c Drain-so urce On

VGS=10V ID= 30 A 0.013 0.016 Ω

Resistance

I

D(on)

On Stat e Drain Cur rent VDS>I

D(on)xRDS(on)max

60 A

VGS=10V

DYNAMIC

Symbol Parameter Test Cond ition s Min. Typ. Max. Unit

g

(∗)Forward

fs

Tr anscond uctanc e

C

C

C

Input Capaci t an ce

iss

Out put C apa citance

oss

Reverse Transfer

rss

Capa cit an c e

VDS>I

D(on)xRDS(on)maxID

=30 A 20 35 S

VDS=25V f=1MHz VGS= 0 4600

580
140

6200

800
200

pF
pF
pF

2/9

STB60NE06-16

ELECTRICAL CHARACTERISTICS (continued)

SWITCHINGON

Symbol Parameter Test Cond ition s Min. Typ. Max. Unit

t

d(on)

(di/dt)

Q

Q

Q

Turn-on Time
Rise Time

t

r

Turn-on Current Slope VDD=48V ID=60A

on

Total Gate Charge

g

Gat e-Sou r ce Charge

gs

Gate-Drain Charge

gd

VDD=30V ID=30A

=4.7 Ω VGS=10V

R

G

=47 Ω VGS=10 V

R

G

VDD=48V ID=60A VGS= 10 V 115

SWITCHINGOFF

Symbol Parameter Test Cond ition s Min. Typ. Max. Unit

t

r(Voff)

t

Of f - voltag e Rise T ime

t

Fall Time

f

Cross-over Time

c

VDD=48V ID=60A

=4.7 Ω VGS=10V

R

G

SOURCE DRAIN DIODE

Symbol Parameter Test Cond ition s Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

Q

I

RRM

(∗) Pulsed: Pulse duration =300 µs, duty cycle1.5 %
(•) Pulse widthlimited by safe operating area

Source-drain Current

(•)

Source-drain Current
(pulsed)

(∗) For ward On Voltage ISD=60A VGS=0 1.5 V

Reverse Recov ery

rr

Time
Reverse Recov ery

rr

= 60 A di/dt = 10 0 A/µs

I

SD

=30V Tj=150oC

V

DD

Charge
Reverse Recov ery
Current

40

12560180
280 A/ µs

160 nC
25
40

15

150
180

25
210
260

60
240

100

0.4
8

ns
ns

nC
nC

ns
ns
ns

A
A

ns

µC

A

Safe Operating Area ThermalImpedance

3/9

STB60NE06-16

Derating Curve

TransferCharacteristics

OutputCharacteristics

Transconductance

StaticDrain-source On Resistance

4/9

Gate Charge vsGate-sourceVoltage

STB60NE06-16

CapacitanceVariations

Normalized OnResistance vsTemperature

Normalized Gate ThresholdVoltagevs
Temperature

Turn-onCurrent Slope

Turn-offDrain-source VoltageSlope

Cross-overTime

5/9

STB60NE06-16

SwitchingSafe OperatingArea

Source-drainDiode Forward Characteristics

AccidentalOverloadArea

Fig. 1: UnclampedInductiveLoad TestCircuit

6/9

Fig. 2: UnclampedInductiveWaveform

STB60NE06-16

Fig. 3: Switching Times Test CircuitsFor

ResistiveLoad

Fig. 5: Test CircuitFor InductiveLoad Switching
And DIodeRecovery Times

Fig. 4: Gate Chargetest Circuit

7/9

STB60NE06-16

TO-263 (D2PAK) MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.3 4.6 0.169 0.181

A1 2.49 2.69 0.098 0.106

B 0.7 0.93 0.027 0.036

B2 1.25 1.4 0.049 0.055

C 0.45 0.6 0.017 0.023

C2 1.21 1.36 0.047 0.053

D 8.95 9.35 0.352 0.368
E 10 10.28 0.393 0.404
G 4.88 5.28 0.192 0.208

L 15 15.85 0.590 0.624
L2 1.27 1.4 0.050 0.055
L3 1.4 1.75 0.055 0.068

mm inch

E

A

C2

L2

D

L

L3

B2

B

A1

C

G

P011P6/C

8/9

STB60NE06-16

Information furnished is believed to be accurateand reliable. However, SGS-THOMSONMicroelectronics assumes no responsability for the
consequencesof use ofsuch information nor for any infringement of patentsor other rights of third parties whichmay resultsfrom its use. No
licenseisgrantedby implicationor otherwise underany patentorpatent rightsofSGS-THOMSONMicroelectronics.Specifications mentioned
in this publicationare subjectto change without notice.This publicationsupersedes and replaces all informationpreviouslysupplied.
SGS-THOMSONMicroelectronics products are notauthorizedforuseas criticalcomponents in lifesupportdevices or systemswithoutexpress
writtenapproval of SGS-THOMSONMicroelectonics.

 1997 SGS-THOMSONMicroelectronics- Printedin Italy- AllRights Reserved

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