
®
N - CHANNEL 30V - 0.009 Ω - 60A - D2PAK
"SINGLE FEATURE SIZE " POWER MOSFET
TYPE V
DSS
STB60NE03L-12 30 V <0.012 Ω 60 A
■ TYPICAL R
■ AVALANCE RUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ REPETITIVE AVA LANCHE DATA AT 100
■ LOW GATE CHARGE
■ HIGH CURRENT CAPABILITY
o
■ 175
■ APPLICATION ORIENTED
C OPERATING TEMPERATURE
DS(on)
= 0.009 Ω
CHARACTERIZATION
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique "Single Feature
Size " strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
R
DS(on)
I
D
o
C
STB60NE03L-12
PRELIMINARY DATA
3
1
D2PAK
TO-263
(Suffix "T4")
INTER NAL SCH E M ATI C DIAG RA M
APPLICATIONS
■ HIGH CURRENT, HIGH SPE ED SWI TCHING
■ SOLENOID AND RELAY DRIVER S
■ DC-DC & DC-AC CONVERT E R
■ AUTOMOTIVE ENVIRONMENT
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
DM
P
dv/dt Peak Diode Recovery voltage slope 7 V/ns
T
(•) Pulse width limited by safe operating area (1) ISD ≤ 60 A, di/dt ≤ 300 A/µs, VDD ≤ V
July 1998
Drain-source Voltage (VGS = 0) 30 V
DS
Drain- gate Voltage (RGS = 20 kΩ)
DGR
Gate-source Voltage ± 20 V
GS
I
Drain Current (continuous) at Tc = 25 oC60A
D
I
Drain Current (continuous) at Tc = 100 oC42A
D
30 V
(•) Drain Current (pulsed) 240 A
Total Dissipation at Tc = 25 oC100W
tot
Derating Factor 0.67 W/oC
Storage Temperature -65 to 175
stg
T
Max. Operating Junction Temperature 175
j
, Tj ≤ T
(BR)DSS
JMAX
o
C
o
C
1/5

STB60NE3L1-16
THERMAL DATA
R
thj-case
Rthj-amb
R
thc-si n k
T
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
l
AVALANCHE CHARACTERI S TICS
Symbol Parameter Max Value Unit
I
AR
E
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
AS
(starting T
= 25 oC, ID = IAR, V
j
ma x)
j
DD
= 15 V)
1.5
62.5
0.5
300
60 A
150 mJ
o
C/W
oC/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
I
= 250 µA V
D
GS
= 0
30 V
Breakdown Voltage
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
= Max Rating
V
DS
V
= Max Rating Tc = 125 oC
DS
V
= ± 20 V
GS
1
10
± 100 nA
ON (∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
Gate Threshold
V
= VGS ID = 250 µA
DS
1 1.7 2.5 V
Voltage
R
DS(on)
I
D(on)
Static Drain-source On
Resistance
VGS = 10 V ID = 30 A
V
= 5 V ID = 30 A
GS
On State Drain Current VDS > I
V
= 10 V
GS
D(on)
x R
DS(on)max
0.009 0.012
0.018ΩΩ
60 A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
gfs (∗) Forward
Transconductance
C
C
C
Input Capacitance
iss
Output Capacitance
oss
Reverse Transfer
rss
Capacitance
VDS > I
V
DS
x R
D(on)
DS(on)max
= 25 V f = 1 MHz V
ID =30 A 20 30 S
= 0 2200
GS
570
200
2800
750
250
µA
µA
pF
pF
pF
2/5

STB60NE3L 1-16
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING O N
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
t
r
Turn-on Time
Rise Time
V
= 15 V ID = 30 A
DD
RG =4.7 Ω VGS = 5 V
40
26050320
ns
ns
Q
Q
Q
Total Gate Charge
g
Gate-Source Charge
gs
Gate-Drain Charge
gd
V
= 24 V ID = 60 A V
DD
= 5 V 35
GS
18
13
45 nC
SWITCHING O F F
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
t
t
Off-voltage Rise Time
Fall Time
f
Cross-over Time
c
V
= 24 V ID = 60 A
DD
=4.7 Ω VGS = 5 V
R
G
35
120
175
50
160
230
SOURCE DRAIN DIO DE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Source-drain Current
(•)
Source-drain Current
60
240
(pulsed)
(∗) Forward On Voltage ISD = 60 A VGS = 0 1.5 V
Reverse Recovery
rr
Time
Reverse Recovery
rr
I
= 60 A di/dt = 100 A/µs
SD
V
= 24 V Tj = 150 oC
DD
55
0.1
Charge
Reverse Recovery
3.5
Current
nC
nC
ns
ns
ns
A
A
ns
µC
Α
3/5

STB60NE3L1-16
TO-263 (D2PAK) MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.3 4.6 0.169 0.181
A1 2.49 2.69 0.098 0.106
B 0.7 0.93 0.027 0.036
B2 1.25 1.4 0.049 0.055
C 0.45 0.6 0.017 0.023
C2 1.21 1.36 0.047 0.053
D 8.95 9.35 0.352 0.368
E 10 10.28 0.393 0.404
G 4.88 5.28 0.192 0.208
L 15 15.85 0.590 0.624
L2 1.27 1.4 0.050 0.055
L3 1.4 1.75 0.055 0.068
mm inch
E
A
C2
L2
D
L
L3
B2
B
A1
C
G
P011P6/C
4/5

STB60NE3L 1-16
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of use of such information n or for any infrin gement of patents or othe r rights of third parties which may result from its use. No licens e i s
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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