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®
N - CHANNEL 30V - 0.009 Ω - 60A - D2PAK
"SINGLE FEATURE SIZE " POWER MOSFET
TYPE V
DSS
STB60NE03L-12 30 V <0.012 Ω 60 A
■ TYPICAL R
■ AVALANCE RUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ REPETITIVE AVA LANCHE DATA AT 100
■ LOW GATE CHARGE
■ HIGH CURRENT CAPABILITY
o
■ 175
■ APPLICATION ORIENTED
C OPERATING TEMPERATURE
DS(on)
= 0.009 Ω
CHARACTERIZATION
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique "Single Feature
Size " strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
R
DS(on)
I
D
o
C
STB60NE03L-12
PRELIMINARY DATA
3
1
D2PAK
TO-263
(Suffix "T4")
INTER NAL SCH E M ATI C DIAG RA M
APPLICATIONS
■ HIGH CURRENT, HIGH SPE ED SWI TCHING
■ SOLENOID AND RELAY DRIVER S
■ DC-DC & DC-AC CONVERT E R
■ AUTOMOTIVE ENVIRONMENT
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
DM
P
dv/dt Peak Diode Recovery voltage slope 7 V/ns
T
(•) Pulse width limited by safe operating area (1) ISD ≤ 60 A, di/dt ≤ 300 A/µs, VDD ≤ V
July 1998
Drain-source Voltage (VGS = 0) 30 V
DS
Drain- gate Voltage (RGS = 20 kΩ)
DGR
Gate-source Voltage ± 20 V
GS
I
Drain Current (continuous) at Tc = 25 oC60A
D
I
Drain Current (continuous) at Tc = 100 oC42A
D
30 V
(•) Drain Current (pulsed) 240 A
Total Dissipation at Tc = 25 oC100W
tot
Derating Factor 0.67 W/oC
Storage Temperature -65 to 175
stg
T
Max. Operating Junction Temperature 175
j
, Tj ≤ T
(BR)DSS
JMAX
o
C
o
C
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STB60NE3L1-16
THERMAL DATA
R
thj-case
Rthj-amb
R
thc-si n k
T
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
l
AVALANCHE CHARACTERI S TICS
Symbol Parameter Max Value Unit
I
AR
E
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
AS
(starting T
= 25 oC, ID = IAR, V
j
ma x)
j
DD
= 15 V)
1.5
62.5
0.5
300
60 A
150 mJ
o
C/W
oC/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
I
= 250 µA V
D
GS
= 0
30 V
Breakdown Voltage
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
= Max Rating
V
DS
V
= Max Rating Tc = 125 oC
DS
V
= ± 20 V
GS
1
10
± 100 nA
ON (∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
Gate Threshold
V
= VGS ID = 250 µA
DS
1 1.7 2.5 V
Voltage
R
DS(on)
I
D(on)
Static Drain-source On
Resistance
VGS = 10 V ID = 30 A
V
= 5 V ID = 30 A
GS
On State Drain Current VDS > I
V
= 10 V
GS
D(on)
x R
DS(on)max
0.009 0.012
0.018ΩΩ
60 A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
gfs (∗) Forward
Transconductance
C
C
C
Input Capacitance
iss
Output Capacitance
oss
Reverse Transfer
rss
Capacitance
VDS > I
V
DS
x R
D(on)
DS(on)max
= 25 V f = 1 MHz V
ID =30 A 20 30 S
= 0 2200
GS
570
200
2800
750
250
µA
µA
pF
pF
pF
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STB60NE3L 1-16
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING O N
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
t
r
Turn-on Time
Rise Time
V
= 15 V ID = 30 A
DD
RG =4.7 Ω VGS = 5 V
40
26050320
ns
ns
Q
Q
Q
Total Gate Charge
g
Gate-Source Charge
gs
Gate-Drain Charge
gd
V
= 24 V ID = 60 A V
DD
= 5 V 35
GS
18
13
45 nC
SWITCHING O F F
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
t
t
Off-voltage Rise Time
Fall Time
f
Cross-over Time
c
V
= 24 V ID = 60 A
DD
=4.7 Ω VGS = 5 V
R
G
35
120
175
50
160
230
SOURCE DRAIN DIO DE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Source-drain Current
(•)
Source-drain Current
60
240
(pulsed)
(∗) Forward On Voltage ISD = 60 A VGS = 0 1.5 V
Reverse Recovery
rr
Time
Reverse Recovery
rr
I
= 60 A di/dt = 100 A/µs
SD
V
= 24 V Tj = 150 oC
DD
55
0.1
Charge
Reverse Recovery
3.5
Current
nC
nC
ns
ns
ns
A
A
ns
µC
Α
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STB60NE3L1-16
TO-263 (D2PAK) MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.3 4.6 0.169 0.181
A1 2.49 2.69 0.098 0.106
B 0.7 0.93 0.027 0.036
B2 1.25 1.4 0.049 0.055
C 0.45 0.6 0.017 0.023
C2 1.21 1.36 0.047 0.053
D 8.95 9.35 0.352 0.368
E 10 10.28 0.393 0.404
G 4.88 5.28 0.192 0.208
L 15 15.85 0.590 0.624
L2 1.27 1.4 0.050 0.055
L3 1.4 1.75 0.055 0.068
mm inch
E
A
C2
L2
D
L
L3
B2
B
A1
C
G
P011P6/C
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STB60NE3L 1-16
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of use of such information n or for any infrin gement of patents or othe r rights of third parties which may result from its use. No licens e i s
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