Datasheet STB60NE03L-12 Datasheet (SGS Thomson Microelectronics)

Page 1
®
N - CHANNEL 30V - 0.009 - 60A - D2PAK
"SINGLE FEATURE SIZE" POWER MOSFET
TYPE V
DSS
STB60NE03L-12 30 V <0.012 60 A
TYPICAL R
AVALANCE RUGGED TECHNOLOGY
100% AVALANCHE TESTED
REPETITIVE AVA LANCHE DATA AT 100
LOW GATE CHARGE
HIGH CURRENT CAPABILITY
o
175
APPLICATION ORIENTED
C OPERATING TEMPERATURE
DS(on)
CHARACTERIZATION
DESCRIPTION
This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
R
DS(on)
I
D
o
C
STB60NE03L-12
PRELIMINARY DATA
3
1
D2PAK
TO-263
(Suffix "T4")
INTER NAL SCH E M ATI C DIAG RA M
APPLICATIONS
HIGH CURRENT, HIGH SPE ED SWI TCHING
SOLENOID AND RELAY DRIVER S
DC-DC & DC-AC CONVERT E R
AUTOMOTIVE ENVIRONMENT
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
DM
P
dv/dt Peak Diode Recovery voltage slope 7 V/ns
T
(•) Pulse width limited by safe operating area (1) ISD 60 A, di/dt 300 A/µs, VDD V
July 1998
Drain-source Voltage (VGS = 0) 30 V
DS
Drain- gate Voltage (RGS = 20 k)
DGR
Gate-source Voltage ± 20 V
GS
I
Drain Current (continuous) at Tc = 25 oC60A
D
I
Drain Current (continuous) at Tc = 100 oC42A
D
30 V
() Drain Current (pulsed) 240 A
Total Dissipation at Tc = 25 oC100W
tot
Derating Factor 0.67 W/oC
Storage Temperature -65 to 175
stg
T
Max. Operating Junction Temperature 175
j
, Tj T
(BR)DSS
JMAX
o
C
o
C
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STB60NE3L1-16
THERMAL DATA
R
thj-case
Rthj-amb
R
thc-si n k
T
Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose
l
AVALANCHE CHARACTERI S TICS
Symbol Parameter Max Value Unit
I
AR
E
Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T
Single Pulse Avalanche Energy
AS
(starting T
= 25 oC, ID = IAR, V
j
ma x)
j
DD
= 15 V)
1.5
62.5
0.5
300
60 A
150 mJ
o
C/W
oC/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
I
= 250 µA V
D
GS
= 0
30 V
Breakdown Voltage
I
DSS
I
GSS
Zero Gate Voltage Drain Current (V
GS
Gate-body Leakage Current (V
DS
= 0)
= 0)
= Max Rating
V
DS
V
= Max Rating Tc = 125 oC
DS
V
= ± 20 V
GS
1
10
± 100 nA
ON ()
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
Gate Threshold
V
= VGS ID = 250 µA
DS
1 1.7 2.5 V
Voltage
R
DS(on)
I
D(on)
Static Drain-source On Resistance
VGS = 10 V ID = 30 A V
= 5 V ID = 30 A
GS
On State Drain Current VDS > I
V
= 10 V
GS
D(on)
x R
DS(on)max
0.009 0.012
0.018ΩΩ
60 A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
gfs () Forward
Transconductance
C
C
C
Input Capacitance
iss
Output Capacitance
oss
Reverse Transfer
rss
Capacitance
VDS > I
V
DS
x R
D(on)
DS(on)max
= 25 V f = 1 MHz V
ID =30 A 20 30 S
= 0 2200
GS
570 200
2800
750 250
µA µA
pF pF pF
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STB60NE3L 1-16
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING O N
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
t
r
Turn-on Time Rise Time
V
= 15 V ID = 30 A
DD
RG =4.7 VGS = 5 V
40
26050320
ns ns
Q Q Q
Total Gate Charge
g
Gate-Source Charge
gs
Gate-Drain Charge
gd
V
= 24 V ID = 60 A V
DD
= 5 V 35
GS
18 13
45 nC
SWITCHING O F F
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
t
t
Off-voltage Rise Time Fall Time
f
Cross-over Time
c
V
= 24 V ID = 60 A
DD
=4.7 VGS = 5 V
R
G
35 120 175
50 160 230
SOURCE DRAIN DIO DE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % () Pulse width limited by safe operating area
Source-drain Current
()
Source-drain Current
60 240
(pulsed)
() Forward On Voltage ISD = 60 A VGS = 0 1.5 V
Reverse Recovery
rr
Time Reverse Recovery
rr
I
= 60 A di/dt = 100 A/µs
SD
V
= 24 V Tj = 150 oC
DD
55
0.1 Charge Reverse Recovery
3.5 Current
nC nC
ns ns ns
A A
ns
µC
Α
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STB60NE3L1-16
TO-263 (D2PAK) MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.3 4.6 0.169 0.181
A1 2.49 2.69 0.098 0.106
B 0.7 0.93 0.027 0.036
B2 1.25 1.4 0.049 0.055
C 0.45 0.6 0.017 0.023
C2 1.21 1.36 0.047 0.053
D 8.95 9.35 0.352 0.368 E 10 10.28 0.393 0.404 G 4.88 5.28 0.192 0.208
L 15 15.85 0.590 0.624 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068
mm inch
E
A
C2
L2
D
L
L3
B2
B
A1
C
G
P011P6/C
4/5
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STB60NE3L 1-16
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information n or for any infrin gement of patents or othe r rights of third parties which may result from its use. No licens e i s granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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