Datasheet STP5NC90Z, STP5NC90ZFP, STB5NC90ZT4, STB5NC90Z-1, STB5NC90Z Datasheet (SGS Thomson Microelectronics)

1/13December 2002

STP5NC90Z - STP5NC90ZFP

STB5NC90Z - STB5NC90Z-1

N-CHANNEL 900V - 2.1Ω - 4.6A TO-220/FP/D²PAK/I²PAK

Zener-Protected PowerMESH™III MOSFET

■ TYPICAL R

DS

(on) = 2.1Ω

■ EXTREMELY HIGHdv/dtAND CAPABILITYGATE

TO - SOURCE ZENER DIODES

■ 100% AVALANCHE TESTED

■ V ER Y LOW GATE INPUT RESISTANCE

■ GAT E CHARGE MINIMIZED

DESCRIPTION

The third generation of MESH OVERLAY™ Power
MOSFETs for very high voltage exhibits unsurpassed
on-resistance per unit area while integrating back-to­back Zenerdiodes between gate andsource. Such ar­rangement gives extra ESD capability with higher rug­gedness performance as requested by a large variety
of single-switch applications.

APPLICATIONS

■ S INGLE -ENDED S MPS IN MONITORS,

COMPUTER AND INDUSTRIALAPPLICATION

■ WELDING EQUIPMENT

ABSOLUTE MAXIMUM RATINGS

(•)Pulse width limited by safe operating area

TYPE V

DSS

R

DS(on)

I

D

STP5NC90Z/FP 900V <2.5Ω 4.6 A
STB5NC90Z/-1 900V <2.5Ω 4.6 A

Symbol Parameter Value Unit

STP(B)5NC90Z(-1) STP5NC90ZFP

V

DS

Drain-source Voltage (VGS=0)

900 V

V

DGR

Drain-gate Voltage (RGS=20kΩ)

900 V

V

GS

Gate- source Voltage ± 25 V

I

D

Drain Current (continuous) at TC= 25°C

4.6 4.6(*) A

I

D

Drain Current (continuous) at TC= 100°C

2.9 2.9(*) A

I

DM

(●)

Drain Current (pulsed) 18 18 A

P

TOT

Total Dissipation at TC= 25°C

125 40 W

Derating Factor 1 0.32 W/°C

I

GS

Gate-source Current (*) ±50 mA

V

ESD(G-S)

Gate source ESD(HBM-C=100pF, R=15KΩ) 3KV

dv/dt Peak Diode Recovery voltage slope 3 V/ns

V

ISO

Insulation Winthstand Voltage (DC) -- 2000 V

T

stg

Storage Temperature –65 to 150 °C

T

j

Max. Operating Junction Temperature 150 °C

(1)ISD≤4.6A,di/dt ≤100A/µs, VDD≤ V

(BR)DSS,Tj≤TJMAX

(*).Limited onlyby maximum temperatureallowed

TO-220

1

2

3

TO-220FP

1

2

3

I²PAK

(Tabless TO-220)

1

3

D²PAK

STP5NC90Z - STP5NC90ZFP - STB5NC90Z - ST B 5NC90Z -1

2/13

THERMAL DATA

AVALANCHE CHARACTERISTICS

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)

OFF

ON (1)

DYNAMIC

TO-220 / D²PAK /

I²PAK

TO-220FP

Rthj-case Thermal Resistance Junction-case Max 1 3.13 °C/W

Rthj-amb Thermal Resistance Junction-ambient Max 30 °C/W

T

l

Maximum Lead Temperature For Soldering Purpose 300 °C

Symbol Parameter Max Value Unit

I

AR

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T

j

max)

4.6 A

E

AS

Single Pulse Avalanche Energy
(starting T

j

= 25 °C, ID=IAR,VDD=50V)

220 mJ

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

Drain-source
Breakdown Voltage

I

D

= 250 µA, VGS=0

900 V

∆BV

DSS

/∆T

J

Breakdown Voltage Temp.
Coefficient

I

D

=1mA,VGS=0

1 V/°C

I

DSS

Zero Gate Voltage
Drain Current (V

GS

=0)

V

DS

= Max Rating

1µA

V

DS

= Max Rating, TC= 125 °C

50 µA

I

GSS

Gate-body Leakage
Current (V

DS

=0)

V

GS

= ±20V

±10 µA

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

Gate Threshold Voltage

V

DS=VGS,ID

= 250µA

345V

R

DS(on)

Static Drain-source On
Resistance

V

GS

=10V,ID= 2.5 A

2.1 2.5 Ω

Symbol Parameter Test Conditions Min. Typ. Max. Unit

g

fs

(1)

Forward Transconductance

V

DS>ID(on)xRDS(on)max,

ID= 2.5A

5.6 S

C

iss

Input Capacitance

V

DS

=25V,f=1MHz,VGS=0

1840 pF

C

oss

Output Capacitance 116 pF

C

rss

Reverse Transfer
Capacitance

12 pF

3/13

STP5NC90Z - STP5NC90ZFP - STB5NC90Z - STB5NC90Z-1

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON

SWITCHING OFF

SOURCE DRAIN DIODE

GATE-SOURCE ZENER DIODE

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

3. ∆V

BV

= αT(25°-T)BV

GSO

(25°)

PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES

The built-inback-to-back Zener diodesha ve specifically beendesigned toenhance not onlythe device’s
ESD capability, but also to make them saf ely absorb possible voltage transients that may occasionally
be appliedfrom gate to source.In this r es pec t the Zenervoltage is appropiateto achieve anefficient and
cost-effective intervention toprotect the device’s integrity. These integrated Zener diodes thusavoid the
usage of external components.

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

Turn-on Delay Time
Rise Time

V

DD

=450V,ID= 2.5 A
RG= 4.7Ω VGS=10V
(see test circuit, Figure 3)

24 ns

t

r

8ns

Q

g

Total Gate Charge

V

DD

=720V,ID= 5A,
V

GS

=10V

40 56 nC

Q

gs

Gate-Source Charge 9 nC

Q

gd

Gate-Drain Charge 15 nC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

r(Voff)

Off-voltage Rise Time

V

DD

= 720V, ID=5A,
RG=4.7Ω, VGS= 10V
(see test circuit, Figure 5)

12 ns

t

f

Fall Time 13 ns

t

c

Cross-over Time 20 ns

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

Source-drain Current 4.6 A

I

SDM

(2)

Source-drain Current (pulsed) 18 A

V

SD

(1)

Forward On Voltage

ISD= 5 A, VGS=0

1.6 V

t

rr

Reverse Recovery Time

ISD= 5 A, di/dt= 100A/µs, V

DD

= 100V, Tj= 150°C
(see test circuit, Figure 5)

510 ns

Q

rr

Reverse Recovery Charge 4 µC

I

RRM

Reverse Recovery Current 15 A

Symbol Parameter Test Conditions Min. Typ. Max. Unit

BV

GSO

Gate-Source Breakdown
Voltage

Igs=± 1mA (Open Drain) 25 V

αT Voltage Thermal Coefficient T=25°C Note(3) 1.3

10

-4

/°C

Rz Dynamic Resistance

I

D

=50mA

90 Ω

STP5NC90Z - STP5NC90ZFP - STB5NC90Z - ST B 5NC90Z -1

4/13

Output Characteristics

Thermal Impedance For TO-220/D²PAK/I²PA K

Safe Operating Area For TO-220FPSafe Operating Area For TO-220/D²PAK/I²PA K

Thermal Impedance For TO-220FP

Transfer Characteristics

5/13

STP5NC90Z - STP5NC90ZFP - STB5NC90Z - STB5NC90Z-1

Normalized On Resistance vs TemperatureNormalized Gate Thresho ld Vo ltag e vs Temp.

Capacitance VariationsGate Charge vs Gate-source Voltage

Static Drain-source On ResistanceTransconductance

STP5NC90Z - STP5NC90ZFP - STB5NC90Z - ST B 5NC90Z -1

6/13

Source-drain Diode Forward Characteristics

7/13

STP5NC90Z - STP5NC90ZFP - STB5NC90Z - STB5NC90Z-1

Fig. 5: Test Circuit For Inductive Load Switching

And Diode Recovery Times

Fig. 4: Gate Charge test Circuit

Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit

Fig. 3: Switching Times Test Circuit For

Resistive Load

STP5NC90Z - STP5NC90ZFP - STB5NC90Z - ST B 5NC90Z -1

8/13

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107

D1 1.27 0.050

E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067

G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154

DIA. 3.75 3.85 0.147 0.151

L6

A

C

D

E

D1

F

G

L7

L2

Dia.

F1

L5

L4

H2

L9

F2

G1

TO-220 MECHANICAL DATA

P011C

9/13

STP5NC90Z - STP5NC90ZFP - STB5NC90Z - STB5NC90Z-1

L2

A

B

D

E

H

G

L6

F

L3

G1

123

F2

F1

L7

L4

L5

DIM.

mm. inch

MIN. TYP MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027

F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067

G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106

H 10 10.4 0.393 0.409

L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 .0385 0.417
L5 2.9 3.6 0.114 0.141
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366

Ø 3 3.2 0.118 0.126

TO-220FP MECHANICAL DATA

STP5NC90Z - STP5NC90ZFP - STB5NC90Z - ST B 5NC90Z -1

10/13

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181

A1 2.49 2.69 0.098 0.106

B 0.7 0.93 0.027 0.036

B2 1.14 1.7 0.044 0.067

C 0.45 0.6 0.017 0.023

C2 1.23 1.36 0.048 0.053

D 8.95 9.35 0.352 0.368

e 2.4 2.7 0.094 0.106

E 10 10.4 0.393 0.409

L 13.1 13.6 0.515 0.531
L1 3.48 3.78 0.137 0.149
L2 1.27 1.4 0.050 0.055

L

L1

B2

B

D

E

A

C2

C

A1

L2

e

P011P5/E

TO-262 (I2PAK) MECHANICAL DATA

11/13

STP5NC90Z - STP5NC90ZFP - STB5NC90Z - STB5NC90Z-1

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181

A1 2.49 2.69 0.098 0.106

B 0.7 0.93 0.027 0.036

B2 1.14 1.7 0.044 0.067

C 0.45 0.6 0.017 0.023

C2 1.21 1.36 0.047 0.053

D 8.95 9.35 0.352 0.368
E 10 10.4 0.393 0.409
G 4.88 5.28 0.192 0.208

L 15 15.85 0.590 0.624
L2 1.27 1.4 0.050 0.055
L3 1.4 1.75 0.055 0.068

L2

L3

L

B2

B

G

E

A

C2

D

C

A1

DETAIL "A"

DETAIL "A"

A2

P011P6/E

TO-263 (D2PAK) MECHANICAL DATA

STP5NC90Z - STP5NC90ZFP - STB5NC90Z - ST B 5NC90Z -1

12/13

TAPE AND REEL SHIPMENT (suffix ”T4”)*

TUBE SHIPMENT (no suffix)*

D2PAK FOOTPRINT

* on sales type

DIM.

mm inch

MIN. MAX. MIN. MAX.

A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0795
G 24.4 26.4 0.960 1.039
N 100 3.937
T 30.4 1.197

BASE QTY BULK QTY

1000 1000

REEL MECHANICAL DATA

DIM.

mm inch

MIN. MAX. MIN. MAX.

A0 10.5 10.7 0.413 0.421
B0 15.7 15.9 0.618 0.626

D 1.5 1.6 0.059 0.063

D1 1. 59 1.61 0.062 0.063

E 1.65 1.85 0.065 0.073

F 11.4 11.6 0.449 0.456
K0 4.8 5.0 0.189 0.197
P0 3.9 4.1 0. 153 0.161
P1 11.9 12.1 0.468 0.476
P2 1.9 2.1 0. 075 0.082

R 50 1.574

T 0.25 0.35 0.0098 0.0137

W 23.7 24.3 0.933 0.956

TAPE MECHANICAL DATA

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STP5NC90Z - STP5NC90ZFP - STB5NC90Z - STB5NC90Z-1

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