Datasheet STP5NC70ZFP, STP5NC70Z, STB5NC70Z-1, STB5NC70Z Datasheet (SGS Thomson Microelectronics)

STP5NC70Z - STP5NC70ZFP

STB5NC70Z - STB5NC70Z-1

N-CHANNEL 700V - 1.8Ω - 4.6A TO-220/FP/D²PAK/I²PAK

Zener-Protected PowerMESH™III MOSFET

TYPE V

DSS

R

DS(on)

I

D

STP5NC70Z/FP 700V < 2 Ω 4.6 A
STB5NC70Z/-1 700V < 2 Ω 4.6 A

■ TYPICAL R

■ EXTREMELY HIGHdv/dtAND CAPABILITYGATE

(on) = 1.8 Ω

DS

TO - SOURCE ZENER DIODES

■ 100% AVALANCHE TESTED

■ V ER Y LOW GATE INPUT RESISTANCE

■ GAT E CHARGE MINIMIZED

DESCRIPTION

The third generation of MESH OVERLAY™ Power
MOSFETs for very high voltage exhibits unsurpassed
on-resistance per unit area while integrating back-to­back Zenerdiodes between gate andsource. Such ar­rangement gives extra ESD capability with higher rug­gedness performance as requested by a large variety
of single-switch applications.

APPLICATIONS

■ S INGLE -ENDED S MPS IN MONITORS,

COMPUTER AND INDUSTRIALAPPLICATION

■ WELDING EQUIPMENT

3

1

D²PAK

TO-220

1

3

2

TO-220FP

I²PAK

(Tabless TO-220)

INTERNAL SCHEMATIC DIAGRAM

3

2

1

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

STP(B)5NC70Z(-1) STP5NC70ZFP

V

DS

V

DGR

V

GS

I

D

I

D

I

DM

P

TOT

I

GS

V

ESD(G-S)

dv/dt Peak Diode Recovery voltage slope 3 V/ns

V

ISO

T

stg

T

(1)Pulse width limited by safe operating area

Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)

700 V

700 V
Gate- source Voltage ± 25 V
Drain Current (continuous) at TC= 25°C
Drain Current (continuous) at TC= 100°C

(1)

Drain Current (pulsed) 18.4 18.4 A
Total Dissipation at TC= 25°C

4.6 4.6(*) A

2.9 2.9(*) A

100 35 W
Derating Factor 0.8 0.32 W/°C
Gate-source Current ± 50 mA
Gate source ESD(HBM-C=100pF, R=15KΩ) 3KV

Insulation Winthstand Voltage (DC) -- 2000 V
Storage Temperature –65 to 150 °C
Max. Operating Junction Temperature 150 °C

j

(●)ISD≤4.5A, di/dt ≤100A/µs, VDD≤ V
(*).Limited only by maximum temperature allowed

(BR)DSS,Tj≤TJMAX

1/12December 2002

STP5NC70Z - STP5NC70ZFP - STB5NC70Z - ST B 5NC70Z -1

THERMAL DATA

TO-220 / D²PAK

I²PAK

Rthj-case Thermal Resistance Junction-case Max 1.25 3.57 °C/W

Rthj-amb Thermal Resistance Junction-ambient Max 62 °C/W

T

Maximum Lead Temperature For Soldering Purpose 300 °C

l

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Unit

I

AR

E

AS

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T

max)

j

Single Pulse Avalanche Energy
(starting T

= 25 °C, ID=IAR,VDD=50V)

j

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

∆BV

(BR)DSS

Drain-source
Breakdown Voltage

/∆TJBreakdown Voltage Temp.

DSS

Coefficient

I

DSS

Zero Gate Voltage
Drain Current (V

I

GSS

Gate-body Leakage
Current (V

DS

=0)

GS

=0)

ID= 250 µA, VGS= 0 700 V

ID=1mA,VGS= 0 0.8 V/°C

V

= Max Rating

DS

= Max Rating, TC= 125 °C

V

DS

V

= ± 20V ±10 µA

GS

TO-220FP

4.6 A

200 mJ

1µA

50 µA

ON (1)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

Gate Threshold Voltage
Static Drain-source On

V

DS=VGS,ID

VGS=10V,ID= 2.4 A

= 250µA

345V

1.8 2.0 Ω

Resistance

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(1) Forward Transconductance VDS>I

g

fs

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance 98 pF
Reverse Transfer

Capacitance

D(on)xRDS(on)max,

ID= 2.4A

V

=25V,f=1MHz,VGS=0

DS

4S

1200 pF

9pF

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STP5NC70Z - STP5NC70ZFP - STB5NC70Z - STB5NC70Z-1

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

Q
Q
Q

t

r

g
gs
gd

Turn-on Delay Time
Rise Time

Total Gate Charge
Gate-Source Charge 8 nC
Gate-Drain Charge 10 nC

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

r(Voff)

t
t

f

c

Off-voltage Rise Time
Fall Time 14 ns
Cross-over Time 22 ns

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SDM

V

I

SD

Q

I

RRM

SD

t

rr

rr

Source-drain Current 4.6 A

(2)

Source-drain Current (pulsed) 18.4 A

(1)

Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge 4.4 µC
Reverse Recovery Current 15.5 A

VDD=350V,ID= 2.5 A
RG= 4.7Ω VGS=10V
(see test circuit, Figure 3)

V

=560V,ID= 5A,

DD

V

=10V

GS

V

= 560V, ID=5A,

DD

RG=4.7Ω, VGS= 10V
(see test circuit, Figure 5)

ISD= 4.6 A, VGS=0
I

= 5 A, di/dt= 100A/µs, V

SD

= 100V, Tj= 150°C
(see test circuit, Figure 5)

DD

22
10

27 36.4 nC

13 ns

1.6 V

570 ns

ns
ns

GATE-SOURCE ZENER DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

BV

GSO

Gate-Source Breakdown

Igs=± 1mA (Open Drain) 25 V

Voltage

αT Voltage Thermal Coefficient T=25°C Note(3) 1.3

I

Rz Dynamic Resistance

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

3. ∆V

= αT(25°-T)BV

BV

GSO

(25°)

=50mA,VGS=0

D

90 Ω

10

-4

/°C

PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES

The built-inback-to-back Zener diodesha ve specifically beendesigned toenhance not onlythe device’s
ESD capability, but also to make them saf ely absorb possible voltage transients that may occasionally
be appliedfrom gate to source.In this r es pec t the Zenervoltage is appropiateto achieve anefficient and
cost-effective intervention toprotect the device’s integrity. These integrated Zener diodes thusavoid the
usage of external components.

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STP5NC70Z - STP5NC70ZFP - STB5NC70Z - ST B 5NC70Z -1

Safe Operating Area For TO-220FPSafe Operating Area For TO-220/D²PAK/I²PA K

Thermal Impedance For TO-220/D²PAK/I²PA K Thermal Impedance For TO-220FP

Output Characteristics

4/12

Transfer Characteristics

STP5NC70Z - STP5NC70ZFP - STB5NC70Z - STB5NC70Z-1

Static Drain-source On ResistanceTransconductance

Gate Charge vs Gate-source Voltage Capacitance Variations

Normalized Gate Thresho ld Vo ltag e vs Temp. Normalized On Resistance vs Temperature

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STP5NC70Z - STP5NC70ZFP - STB5NC70Z - ST B 5NC70Z -1

Source-drain Diode Forward Characteristics

6/12

STP5NC70Z - STP5NC70ZFP - STB5NC70Z - STB5NC70Z-1

Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit

Fig. 3: Switching Times Test Circuits For

Resistive Load

Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times

Fig. 4: Gate Charge test Circuit

7/12

STP5NC70Z - STP5NC70ZFP - STB5NC70Z - ST B 5NC70Z -1

E

P011C

TO-220 MECHANICAL DATA

DIM.

A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107

D1 1.27 0.050

E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067

G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154

DIA. 3.75 3.85 0.147 0.151

MIN. TYP. MAX. MIN. TYP. MAX.

mm inch

A

C

D

8/12

L5

Dia.

L7

D1

L6

L2

L9

F1

G1

F

H2

G

F2

L4

STP5NC70Z - STP5NC70ZFP - STB5NC70Z - STB5NC70Z-1

TO-220FP MECHANICAL DAT A

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027

F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067

G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106

H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366

Ø 3 3.2 0.118 0.126

mm inch

E

A

D

B

L3

L6

L7

¯

F1

F

G1

H

G

F2

123

L2

L4

9/12

STP5NC70Z - STP5NC70ZFP - STB5NC70Z - ST B 5NC70Z -1

P011P5/E

TO-262 (I2PAK) MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181

A1 2.49 2.69 0.098 0.106

B 0.7 0.93 0.027 0.036

B2 1.14 1.7 0.044 0.067

C 0.45 0.6 0.017 0.023

C2 1.23 1.36 0.048 0.053

D 8.95 9.35 0.352 0.368

e 2.4 2.7 0.094 0.106

E 10 10.4 0.393 0.409

L 13.1 13.6 0.515 0.531
L1 3.48 3.78 0.137 0.149
L2 1.27 1.4 0.050 0.055

mm inch

C

A

A1

10/12

C2

B2

B

e

E

L1

L2

D

L

STP5NC70Z - STP5NC70ZFP - STB5NC70Z - STB5NC70Z-1

P011P6/E

TO-263 (D2PAK) MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181

A1 2.49 2.69 0.098 0.106

B 0.7 0.93 0.027 0.036

B2 1.14 1.7 0.044 0.067

C 0.45 0.6 0.017 0.023

C2 1.21 1.36 0.047 0.053

D 8.95 9.35 0.352 0.368
E 10 10.4 0.393 0.409
G 4.88 5.28 0.192 0.208

L 15 15.85 0.590 0.624
L2 1.27 1.4 0.050 0.055
L3 1.4 1.75 0.055 0.068

mm inch

D

A

C2

DETAIL "A"

C

A2

DETAIL "A"

A1

B2

E

L2

L

L3

B

G

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STP5NC70Z - STP5NC70ZFP - STB5NC70Z - ST B 5NC70Z -1

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