N-CHANNEL 500V - 1.3Ω - 5.5A T O-220/FP/D2PAK/I2PAK
PowerMesh™II MOSFET
TYPEV
STP5NC50
STP5NC50FP
STB5NC50
STB5NC50-1
■ TYPICAL R
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% A V ALANCHE TESTED
■ NEW HIGH VOLTAGE BENCHMARK
■ GATE CHARGE MINIMIZED
DS
DSS
500 V
500 V
500 V
500 V
(on) = 1.3Ω
R
DS(on)
<1.5Ω
<1.5Ω
<1.5Ω
<1.5Ω
I
D
5.5A
5.5A
5.5A
5.5A
DESCRIPTION
The PowerMESH
generation of MESH OV ERLAY
™II is the evolution of the first
™. T he layout re-
finements introduced greatly improv e the Ron*area
figure of merit while keeping the device at the leading edge for what concerns swithing s peed, gate
charge and ruggedness.
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITH MODE POWER SUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVES
3
1
TO-220
D2PAK
3
2
1
TO-220FP
I2PAK
INTERNAL SCHEM ATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
SymbolParameterValueUnit
STP5NC50
STB5NC50/-1
Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)
Gate- source Voltage±30V
Drain Current (continuos) at TC= 25°C
Drain Current (continuos) at TC= 100°C
()
Drain Current (pulsed)2222A
Total Dissipation at TC= 25°C
5.55.5(*)A
3.53.5(*)A
10035W
I
V
DM
P
V
DGR
V
I
I
TOT
DS
GS
D
D
Derating Factor0.80.28W/°C
dv/dt(1)Peak Diode Recovery voltage slope3.5V/ns
V
ISO
T
T
stg
(•)Pulse width limited by safe operating area
≤5.5A, di/dt ≤100A/µs, VDD≤ V
(1)I
SD
Insulation Withstand Voltage (DC)-2500V
Operating Junction Temperature
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for t he
consequences of use of su ch in formation nor for any in fringement of patents or other rights of third parties w hich may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously suppli ed. STMi croelect ronics pr oducts are not author ized for use as cr itical component s in li fe suppo rt devi ces or
systems without express written approval of STMicroelectronics.
Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco