Datasheet STB5NB80 Datasheet (SGS Thomson Microelectronics)



STB5NB80

N - CHANNEL 800V - 1.8Ω -5A-D2PAK

PowerMESH MOSFET

TYPE V

DSS

R

DS(on)

I

D

STB5NB80 800 V < 2.2 Ω 5A

■ TYPICALR

■ EXTREMELYHIGH dv/dt CAPABILITY

■ 100%AVALANCHETESTED

■ VERYLOW INTRINSIC CAPACITANCES

■ GATECHARGE MINIMIZED

■ ADDSUFFIX ”T4” FOR ORDERING IN TAPE

DS(on)

= 1.8

Ω

& REEL

DESCRIPTION

Using the latest high voltageMESH OVERLAY
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.

APPLICATIONS

■ HIGHCURRENT, HIGHSPEEDSWITCHING

■ DC-AC CONVERTERS FOR WELDING

■ EQUIPMENTAND UNINTERRUPTIBLE

POWERSUPPLIESAND MOTORDRIVE

3

1

D2PAK
TO-263

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

V

V

I

DM

P

dv/ dt(

T

(*) Limited only by maximum temperature allowed (1)ISD≤ 5A, di/dt ≤ 200 A/µs,VDD≤ V

March 1999

Drain-source Voltage (VGS=0) 800 V

DS

Dra in- gat e Voltage (RGS=20kΩ)

DGR

Gate -source Voltage

GS

I

Dra in Cur ren t (continuous ) a t Tc=25oC5A

D

I

Dra in Cur ren t (continuous ) a t Tc= 100oC3.2A

D

800 V

30 V

±

(•) Dra in Curr en t (puls ed) 20 A

Tot al Dissipati on at Tc=25oC110W

tot

Der at ing Factor 0.88 W/

1) Peak Diode Recovery voltag e slope 4 V / ns

St orage Tem pe ra t ure -65 to 150

stg

T

Max. Op erat i ng J unction Temperature 150

j

,Tj≤T

(BR)DSS

JMAX

o

C

o

C

o

C

1/8

STB5NB80

THERMAL DATA

R

thj-case

R

thj-amb

R

thc-sink

T

AVALANCHE CHARACTERISTICS

Ther mal Resis t an ce Junc ti on-cas e Max 1.13
Ther mal Resis t an ce Junc ti on-ambien t Max

Thermal Resistance Case-sink Typ
Maximum Lead Tem per at ure For S old er ing Pur p ose

l

62.5

0.5

300

o

C/W

o

C/W

o

C/W

o

C

Symbol Para meter Mi n .

I

AR

E

ELECTRICAL CHARACTERISTICS

Avalanche Curr ent, Repet itiv e or Not-Repetitive
(pulse width limited by T

Single Pu lse Avalanche En ergy

AS

(starting T

=25oC, ID=IAR,VDD=50V)

j

max)

j

(T

case

=25oC unless otherwisespecified)

Value

Max.

Value

5A

300 mJ

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

Drain-sourc e

=250µAVGS=0

I

D

800 V

Break d own Voltage

I

DSS

I

GSS

Zero Gate Voltage
Drain Cu rr ent (V

GS

Gat e- b ody Leak a ge
Current (V

DS

=0)

=0)

V

=MaxRating

DS

= Max Rating Tc=125oC

V

DS

=± 30 V

V

GS

1

50

100 nA

±

ON(∗)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

I

D(on)

Gate Threshold

V

DS=VGSID

Voltage
Static Drain-source O n

VGS=10V ID= 2.5 A 1.8 2.2 Ω

Resistanc e
On Stat e Dra in Curr ent VDS>I

VGS=10V

= 250µA

D(on)xRDS(on)max

345V

5A

Unit

A

µ
µA

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

g

(∗)Forward

fs

C

iss

C

oss

C

rss

2/8

Tr ansconduc tance
Input Cap acitan ce

Out put Capac it ance
Reverse Transfer
Capacitance

VDS>I

D(on)xRDS(on)maxID

=2.5A 1.5 4 S

VDS=25V f=1MHz VGS= 0 1050

135

15

pF
pF
pF

STB5NB80

ELECTRICAL CHARACTERISTICS

(continued)

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

Turn-on delay Time

t

Rise Time

r

VDD= 400 V ID=3A

=4.7 Ω VGS=10V

R

G

18

9

(see t est circuit, figure 3)

Q
Q
Q

Total Gate Charge

g

Gat e- Source Char ge

gs

Gate-Drain Charge

gd

VDD= 480 V ID=5.6A VGS=10V 30

9

14

42 nC

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

r(Voff)

t

t

Off -voltage R ise T ime
Fall Time

f

Cross-ov er Ti m e

c

VDD= 640 V ID=5.6A

=4.7 Ω VGS=10V

R

G

(see t est circuit, figure 5)

14
14
21

SOURCEDRAINDIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

Q

I

RRM

(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operatingarea

Source-drain Curr ent

(•)

Source-drain Curr ent

5

20

(pulsed)

(∗) F orwar d On Voltage ISD=5A VGS=0 1.6 V

Reverse Recov ery

rr

Time
Reverse Recov ery

rr

=5.6A di/dt=100A/µs

I

SD

= 100 V Tj=150oC

V

DD

(see t est circuit, figure 5)

700

5
Charge
Reverse Recov ery

14

Current

ns
ns

nC
nC

ns
ns
ns

A
A

ns

µ

A

C

SafeOperating Area Thermal Impedance

3/8

STB5NB80

OutputCharacteristics

Transconductance

TransferCharacteristics

Static Drain-sourceOn Resistance

Gate Charge vs Gate-sourceVoltage

4/8

CapacitanceVariations

STB5NB80

Normalized GateThresholdVoltage vs
Temperature

Source-drainDiode Forward Characteristics

Normalized On Resistance vsTemperature

5/8

STB5NB80

Fig. 1: Unclamped InductiveLoad Test Circuit

Fig. 3: Switching Times Test CircuitsFor
ResistiveLoad

Fig. 2: Unclamped InductiveWaveform

Fig. 4: Gate Chargetest Circuit

Fig. 5: Test Circuit For InductiveLoad Switching
And Diode Recovery Times

6/8

TO-263 (D2PAK) MECHANICAL DATA

STB5NB80

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.3 4.6 0.169 0.181

A1 2.49 2.69 0.098 0.106

B 0.7 0.93 0.027 0.036

B2 1.25 1.4 0.049 0.055

C 0.45 0.6 0.017 0.023

C2 1.21 1.36 0.047 0.053

D 8.95 9.35 0.352 0.368
E 10 10.28 0.393 0.404
G 4.88 5.28 0.192 0.208

L 15 15.85 0.590 0.624
L2 1.27 1.4 0.050 0.055
L3 1.4 1.75 0.055 0.068

mm inch

E

A

C2

L2

D

L

L3

B2

B

A1

C

G

P011P6/C

7/8

STB5NB80

Information furnishedis believedto beaccurate and reliable.However, STMicroelectronics assumesno responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specificationmentioned in this publication are
subjecttochange without notice. This publicationsupersedesandreplaces all information previouslysupplied. STMicroelectronicsproducts
are not authorized for use as critical components in life support devicesor systemswithout express written approval of STMicroelectronics.

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