Datasheet STP55NF06LFP, STP55NF06L, STB55NF06L-1, STB55NF06L Datasheet (SGS Thomson Microelectronics)

Page 1
STP55NF06L - STP55NF06LFP
STB55NF06L - STB55NF06L-1
N-CHANNEL 60V - 0.014 - 55A TO-220/FP/D2PAK/I2PAK
TYPE V
STP55NF06L STP55NF06LFP STB55NF06L STB55NF06L-1
TYPICAL R
EXCEPTIONAL dv/dt CAPABILITY
APPLICATION ORIENTED
DS
DSS
60 V 60 V 60 V 60 V
(on) = 0.014
R
DS(on)
<0.018 <0.018 <0.018 <0.018
I
D
55 A 55 A 55 A 55 A
CHARACTERIZATION
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics unique “Single Feature
™” strip-based process. The re sulting tran-
Size
sistor shows extremely high packing density for low on-resistance, rugged avalance characteris­tics and less critical alignment steps therefore a re­markable manufacturing reproducibility.
APPLICATIONS
HIGH CURRENT, HIGH SPEED SWITCHING
MOTOR CONTROL, AUDIO AMPLIFIERS
DC-DC & DC-AC CONVERTERS
AUTOMOTIVE ENVI R ONM EN T (IN JECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
3
2
1
TO-220
2
D
PAK
3
1
TO-220FP
I2PAK
INTERNAL SCHEMATIC DIAGRAM
3
2
1
3
2
1
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STP55NF06L
STB55NF06L/-1
Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage ± 16 V
Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C
(l)
Drain Current (pulsed) 220 120 A Total Dissipation at TC = 25°C
55 30 A 39 21 A
95 30 W
V
I
DM
P
V
DGR
V
I I
TOT
DS
GS D D
Derating Factor 0.63 0.2 W/°C
dv/dt (2) Peak Diode Recovery voltage slope 20 V/ns
(1)
E
AS
V
ISO
T
stg
T
j
() Pulse width limited by safe operating area
Single Pulse Avalanche Energy 300 mJ Insulation Withstand Voltage (DC) - 2500 V Storage Temperature Max. Operating Junction Temperature
(1) Starting Tj=25°C, ID=27.5A, VDD=30V
55 A, di/dt 200A/µs, VDD V
(2) I
SD
– 55 to 175 °C
STP55NF06LFP
60 V 60 V
, Tj T
(BR)DSS
JMAX.
1/12August 2002
Page 2
STP55NF06L - STP55NF06LFP - STB 55NF06L - STB55NF06L-1
THERMA L D ATA
TO-220
2
PAK
D
2
I
PAK
Rthj-case Thermal Resistance Junction-case Max 1.58 5.0 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
T
l
Maximum Lead Temperature For Soldering Purpose
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
(1)
ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Drain-source Breakdown Voltage
Zero Gate Voltage Drain Current (V
GS
= 0)
Gate-body Leakage Current (V
DS
= 0)
Gate Threshold Voltage Static Drain-source On
Resistance
ID = 250 µA, VGS = 0 60 V
V
= Max Rating
DS
V
= Max Rating, TC = 125 °C
DS
V
= ± 16 V ±100 nA
GS
V
= VGS, ID = 250 µA
DS
1 1.7 V VGS = 5 V, ID = 27.5 A VGS = 10V, ID = 27.5 A
TO-220FP
300 °C
A
10 µA
0.016 0.020
0.014 0.018
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1)
g
fs
C
iss
C
oss
C
rss
Forward Transconductance Input Capacitance Output Capacitance 300 pF Reverse Transfer
Capacitance
VDS = 15V , ID = 27.5 A
V
= 25V, f = 1 MHz, VGS = 0
DS
30 S
1700 pF
105 pF
2/12
Page 3
STP55NF06L - STP55NF06LF P - S TB55NF06L - STB55NF06L-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
t
d(on)
Q Q Q
t
r
g gs gs
Turn-on Delay Time Rise Time 100 ns Total Gate Charge
Gate-Source Charge Gate-Drain Charge
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
t
f
Turn-off-Delay Time Fall Time
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD (1)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pu l se duration = 300 µs, dut y c yc l e 1.5 %.
2. Pulse width li mited by safe operating area.
Source-drain Current 55 A
(2)
Source-drain Current (pulsed) 220 A Forward On Voltage Reverse Recovery Time
Reverse Recovery Charge Reverse Recovery Current
= 30 V, ID = 27.5A
DD
RG= 4.7 VGS = 10V (see test circuit, Figure 3)
= 48 V, ID = 55 A,
V
DD
VGS = 4.5V
VDD = 30 V, ID = 27.5 A, RG=4.7Ω, V
GS
= 4.5V
(see test circuit, Figure 5)
ISD = 55 A, VGS = 0
= 55A, di/dt = 100A/µs,
I
SD
VDD = 30 V, Tj = 150°C (see test circuit, Figure 5)
20 ns
27
37 nC
7
10
40 20
1.3 V
80
200
5
nC nC
ns ns
ns
nC
A
Thermal Impedance for TO-220/D2PAK/I2PAKSafe Operating Area For TO-220/D2PAK/I2PAK
3/12
Page 4
STP55NF06L - STP55NF06LFP - STB 55NF06L - STB55NF06L-1
Safe Operating Area For TO-220FP
Output Characteristics
Thermal Impedance For TO-220FP
Transfer Characteristics
Transconductance
4/12
Static Drain-source On Resistance
Page 5
STP55NF06L - STP55NF06LF P - S TB55NF06L - STB55NF06L-1
Capacitance VariationsGate Charge vs Gate-source Voltage
Normalized Gate Threshold Volta ge vs Temp.
Source-drain Diode Forward Characteristics
Normalized On Resistance vs Temperatur e
5/12
Page 6
STP55NF06L - STP55NF06LFP - STB 55NF06L - STB55NF06L-1
Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuit For
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times
Fig. 4: Gate Charge test Circuit
6/12
Page 7
STP55NF06L - STP55NF06LF P - S TB55NF06L - STB55NF06L-1
E
TO-220 MECHANICAL DATA
DIM.
A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 L4 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
MIN. TYP. MAX. MIN. TYP. MAX.
mm inch
A
C
D
L5
Dia.
L7
D1
L6
L2
L9
F1
G1
F
H2
G
F2
L4
P011C
7/12
Page 8
STP55NF06L - STP55NF06LFP - STB 55NF06L - STB55NF06L-1
TO-220FP MECHANICAL DATA
DIM.
A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027
F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126
MIN. TYP MAX. MIN. TYP. MAX.
mm. inch
E
A
D
B
L3
L6
L7
¯
F1
F
G1
H
G
F2
123
L2
L5
L4
8/12
Page 9
STP55NF06L - STP55NF06LF P - S TB55NF06L - STB55NF06L-1
2
D
PAK MECH ANICAL DATA
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009
B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067
C 0.45 0.6 0.017 0.023
C2 1.23 1.36 0.048 0.053
D 8.95 9.35 0.352 0.368
D1 8 0.315
E 10 10.4 0.393 E1 8.5 0.334
G 4.88 5.28 0.192 0.208
L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068
mm. inch
M 2.4 3.2 0.094 0.126
R 0.4 0.015
V2 0º4º
3
9/12
1
Page 10
STP55NF06L - STP55NF06LFP - STB 55NF06L - STB55NF06L-1
TO-262 (I2PAK) MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
A1 2.49 2.69 0.098 0.106
B 0.7 0.93 0.027 0.036
B2 1.14 1.7 0.044 0.067
C 0.45 0.6 0.017 0.023
C2 1.23 1.36 0.048 0.053
D 8.95 9.35 0.352 0.368
e 2.4 2.7 0.094 0.106
E 10 10.4 0.393 0.409
L 13.1 13.6 0.515 0.531 L1 3.48 3.78 0.137 0.149 L2 1.27 1.4 0.050 0.055
mm inch
C
A
A1
10/12
C2
B2
B
e
E
L1
L2
D
L
P011P5/E
Page 11
STP55NF06L - STP55NF06LF P - S TB55NF06L - STB55NF06L-1
D2PAK FOOTPRINT
TAPE AND REEL SHIPMENT (suffix ”T4”)*
TUBE SHIPMENT (no suffix)*
REEL MECHANICAL DATA
TAPE MECHANICAL DATA
DIM.
A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626
D 1.5 1.6 0.059 0.063
D1 1.59 1.61 0.062 0.063
E 1.65 1.85 0.065 0.073
F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082
R 50 1.574
T 0.25 0.35 0.0098 0.0137
W 23.7 24.3 0.933 0.956
mm inch
MIN. MAX. MIN. MAX.
DIM.
A 330 12.992 B 1.5 0.059 C 12.8 13.2 0.504 0.520 D 20.2 0795 G 24.4 26.4 0.960 1.039 N 100 3.937
T 30.4 1.197
BASE QTY BULK QTY
mm inch
MIN. MAX. MIN. MAX.
1000 1000
* on s ales type
11/12
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STP55NF06L - STP55NF06LFP - STB 55NF06L - STB55NF06L-1
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility f or the consequences of use of su ch in formation nor for any in fringement of patents or other rights of third parties w hich may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously suppli ed. STMi croelect ronics pr oducts are not author ized for use as cr itical component s in li fe suppo rt devi ces or systems without express written approval of STMicroelectronics.
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