Datasheet STP55NF06FP, STP55NF06, STB55NF06-1 Datasheet (SGS Thomson Microelectronics)

Page 1
STB55NF06 STB55NF06-1
STP55NF06 STP55NF06FP
N-CHANNEL 60V - 0.015 Ω - 50A TO-220/ TO-220FP/I²PAK/D²PAK
STripFET™ II POWER MOSFET
TYPE
STP55NF06 STB55NF06-1 STB55NF06 STP55NF06FP
TYPICAL R
EXCEPTIONA L dv/d t CAPABILITY
100% AVALANCHE TESTED
SURFACE-MOUNTING D
V
DSS
60 V 60 V 60 V 60 V
(on) = 0.015
DS
R
DS(on)
<0.018
<0.018
<0.018
<0.018
2
PAK (TO-263)
I
D
50 A 50 A 50 A
50 A(*)
POWER PACKAG E IN TU BE (NO SU FFIX) OR
IN TAPE & REEL (SUFFIX “T4”)
THROUGH-HOLE I²PAK (TO-262) POWER
PACKAGE IN TUBE (SUFFIX “- 1 ")
DESCRIPTION
This Power MOSFET is th e latest d evelopment of ST-
Microelectronis unique "Single Feature Size™" strip­based process. The resulting transistor shows ex­tremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufactur­ing reproducibility.
APPLICATIONS
HIGH CURRENT, HIGH SWITCHING SPEED
MOTOR CONTROL, AUDIO AMPLIFIERS
DC-DC & DC-AC CONVERTERS
AUTOMOTIVE
TO-220FP
1
²
PAK
I
TO-262
(Suffix “-1”)
3
2
3
2
1
TO-220
D²PAK
TO-263
(Suffix “T4”)
INTERNAL SCHEMATIC DIAGRAM
3
2
1
3
1
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STP_B55NF06(-1) STP55NF06FP
V
DS
V
DGR
V
GS
I
D
I
D
(
I
DM
P
tot
dv/dt
E
AS
T
stg
T
j
(
Pulse widt h l i m i ted by safe operating area
•)
(*)Refer to soa for the max allowable current value on FP-type due
to Rth value
.
Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ)
60 V 60 V
Gate- source Voltage ± 20 V
Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C
•)
Drain Current (pulsed) 200 200(*) A Total Dissipation at TC = 25°C
50 50(*) A 35 35(*) A
110 30 W
Derating Factor 0.73 0.2 W/°C
(1)
Peak Diode Recovery voltage slope 7 V/ns
(2)
Single Pulse Avalanche Energy 350 mJ Storage Temperature Operating Junction Temperature
(1)
ISD ≤50A, di/dt ≤400A/µs , VDD ≤ V
(2) Starting
-55 to 175 °C
Tj = 25 oC, ID = 25A, VDD= 30V
(BR)DSS
, Tj ≤ T
JMAX
1/12March 2003
Page 2
STB50NF06 STB55NF06-1 STP55NF06 ST P55NF06FP
THERMA L D ATA
I²PAK
D²PAK
TO-220
Rthj-case Thermal Resistance Junction-case Max 1.36 5 °C/W
Rthj-amb
T
l
Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose
Max 62.5
(1.6 mm from case, for 10 sec)
TO-220FP
300
°C/W
°C
ELECTRICAL CHARACTERISTICS (T
= 25 °C unless otherwise specified)
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
= 250 µA, VGS = 0
D
V
= Max Rating
DS
V
= Max Rating TC = 125°C
DS
V
= ± 20 V
GS
60 V
1
10
±100 nA
ON
V
(BR)DSS
I
DSS
I
GSS
(*)
Drain-source Breakdown Voltage
Zero Gate Voltage Drain Current (V
GS
Gate-body Leakage Current (V
DS
= 0)
= 0)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage Static Drain-source On
= VGS I
DS
V
= 10 V ID = 27.5 A
GS
= 250 µA
D
234V
0.015 0.018
V
Resistance
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(*)
g
fs
C
iss
C
oss
C
rss
Forward Transconductance Input Capacitance
Output Capacitance Reverse Transfer Capacitance
V
= 15 V ID= 27.5 A
DS
= 25V, f = 1 MHz, VGS = 0
V
DS
18 S
1530
300 105
µA µA
pF pF pF
2/12
Page 3
STB50NF06 STB55NF06-1 STP55NF 06 STP55NF06FP
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
= 30 V ID = 27.5 A
t
d(on)
Turn-on Delay Time
t
r
Rise Time
V
DD
R
= 4.7 Ω VGS = 10 V
G
(Resistive Load, Figure 3)
Q
g
Q
gs
Q
gd
Total Gate Charge Gate-Source Charge Gate-Drain Charge
= 48 V ID= 55 A VGS= 10V
V
DD
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
= 30V ID = 27.5 A
t
d(off)
Turn-off Delay Time
t
f
Fall Time
V
DD
R
= 4.7Ω, V
G
GS
= 10 V
(Resistive Load, Figure 3)
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
rr
Q
rr
I
RRM
(*)
Pulsed: P ul se duration = 300 µs, duty cycle 1.5 %.
(
•)Pulse width limited by s af e operating area.
Source-drain Current
(•)
Source-drain Current (pulsed)
(*)
Forward On Voltage Reverse Recovery Time
Reverse Recovery Charge Reverse Recovery Current
I
= 55A VGS = 0
SD
= 55 A di/dt = 100A/µs
I
SD
V
= 30 V Tj = 150°C
DD
(see test circuit, Figure 5)
16
8
44.5
10.5
17.5
36 15
75
170
4.5
60 nC
50
200
1.5 V
ns ns
nC nC
ns ns
A A
ns
nC
A
Safe Operating Area for TO-220FPSafe Operating Area for
3/12
Page 4
STB50NF06 STB55NF06-1 STP55NF06 ST P55NF06FP
Thermal Impedance Thermal Impedance for TO-220FP
Output Characteristics Transfer Characteristics
Transconductance Static Drain-source On Resistance
4/12
Page 5
STB50NF06 STB55NF06-1 STP55NF 06 STP55NF06FP
Gate Charge vs Gate-source Voltage Capacitance Variations
Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics Normalized Breakdown Voltage Temperature
5/12
Page 6
STB50NF06 STB55NF06-1 STP55NF06 ST P55NF06FP
Fig. 1: Unclamped Inductive Load Test CircuitFig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For Resistive
Load
Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times
Fig. 4: Gate Charge test Circuit
6/12
Page 7
STB50NF06 STB55NF06-1 STP55NF 06 STP55NF06FP
D2PAK MECHANICAL DATA
DIM.
A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 A2 0.03 0.23 0.001 0.009
B 0.7 0.93 0.028 0.037 B2 1.14 1.7 0.045 0.067
C 0.45 0.6 0.018 0.024 C2 1.21 1.36 0.048 0.054
D 8.95 9.35 0.352 0.368 D1 8 0.315
E 10 10.4 0.394 0.409 E1 8.5 0.334
G 4.88 5.28 0.192 0.208
L 15 15.85 0.591 0.624 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.069
M 2.4 3.2 0.094 0.126
R 0.4 0.015
V2
MIN. TYP. MAX. MIN. TYP. TYP.
mm. inch.
0.106
7/12
Page 8
STB50NF06 STB55NF06-1 STP55NF06 ST P55NF06FP
E
TO-220 MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 L4 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
mm inch
A
C
D
D1
L2
F1
L5
Dia.
G1
F
F2
L9
G
H2
L7
L6
L4
P011C
8/12
Page 9
STB50NF06 STB55NF06-1 STP55NF 06 STP55NF06FP
TO-262 (I2PAK) MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106
B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067
C 0.45 0.6 0.017 0.023
C2 1.23 1.36 0.048 0.053
D 8.95 9.35 0.352 0.368
e 2.4 2.7 0.094 0.106
E 10 10.4 0.393 0.409
L 13.1 13.6 0.515 0.531
L1 3.48 3.78 0.137 0.149 L2 1.27 1.4 0.050 0.055
mm inch
C
A
A1
C2
B2
B
e
E
L1
L2
D
L
P011P5/E
9/12
Page 10
STB50NF06 STB55NF06-1 STP55NF06 ST P55NF06FP
TO-220FP MECHANICAL DAT A
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 0.385 0.417 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126
mm inch
A
B
H
E
D
L3
L6
L7
¯
F1
F
G1
G
F2
123
L2
L4
10/12
Page 11
STB50NF06 STB55NF06-1 STP55NF 06 STP55NF06FP
D2PAK FOOTPRINT
TA PE AND REEL SHIPMENT (suffix ”T4”)*
TUBE SHIPMENT (no suffix)*
REEL MECHANICAL DATA
DIM.
A 330 12.992 B 1.5 0.059 C 12.8 13.2 0.504 0.520 D 20.2 0.795 G 24.4 26.4 0.960 1.039 N 100 3.937 T 30.4 1.197
mm inch
MIN. MAX. MIN. MAX.
TAPE MECHANICAL DATA
DIM.
A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626
D 1.5 1.6 0.059 0.063
D1 1.59 1.61 0.062 0.063
E 1.65 1.85 0.065 0.073
F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0075 0.082
R50 1.574
T0.25 0.35 .0.0098 0.0137
W 23.7 24.3 0.933 0.956
mm inch
MIN. MAX. MIN. MAX.
* on sales type
BASE QTY BULK QTY
1000 1000
11/12
Page 12
STB50NF06 STB55NF06-1 STP55NF06 ST P55NF06FP
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implic ation or otherwise under any patent or p at ent rights of STMicroelectronics. Spec i fications mentioned in this publicatio n are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as cri t i cal compone nts in life support device s or systems without express written approval of STM i croelectr onics.
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12/12
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