Datasheet STB55NF03L Datasheet (SGS Thomson Microelectronics)



STB55NF03L

N-CHANNEL 30V - 0.01

TYPE V

ST B55NF03L 30 V < 0. 013 Ω 55 A

■ TYPICALR

■ OPTIMIMIZEDFOR HIGH SWITCHING

DS(on)

DSS

= 0.01 Ω

OPERATIONS

■ LOW GATE CHARGE

■ LOGICLEVEL GATE DRIVE

DESCRIPTION

This Power Mosfet is the latest development of
STMicroelectronics unique ”Single Feature
Size” strip-basedprocess. The resulting transi­stor shows extremely high packing density forlow
on-resistance, rugged avalance characteristics
and less critical alignment steps therefore a re­markablemanufacturingreproducibility.

APPLICATIONS

■ LOW VOLTAGEDC-DC CONVERTERS

■ HIGHCURRENT, HIGHSPEED SWITCHING

■ HIGHEFFICIENCY SWITCHINGCIRCUITS

R

DS(on)

I

D

Ω

- 55A D2PAK

STripFET POWER MOSFET

3

1

D2PAK

TO-263

ADD SUFFIX ”T4”FOR ORDERING INTAPE & REEL

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

V

V

I

DM

P

T

(•) Pulsewidth limited by safeoperating area

10/01/2000

Dra in- sour c e Volt age (VGS=0) 30 V

DS

Dra in- gate Volt age (RGS=20kΩ)30V

DGR

Gat e-source Voltage

GS

I

Dra in Current (c ont in uous ) at Tc=25oC55A

D

I

Dra in Current (c ont in uous ) at Tc=100oC39A

D

(•) D rain Cu rr ent (p ulsed) 220 A

Tot al Dissipation at Tc=25oC80W

tot

Der ati ng Fac t or 0.53 W/
St orage Tem pe rat ure -65 to 175

stg

T

Max. Operating Junct ion Temper at ur e 175

j

20 V

±

o

C

o

C

o

C

1/8

STB55NF03L

THERMAL DATA

R

thj-case

R

thj-amb

T

Ther mal Resistanc e Junct ion-case Max
Ther mal Resistanc e Junct ion-ambient Max
Maximum Lead T emperat ur e For Soldering Purpose

l

1.875

62.5
300

o

C/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS

=25oC unless otherwisespecified)

(T

case

OFF

Symbol Parameter Test Conditions Min. Typ. Max. U nit

V

(BR)DSS

Drain-source

ID=250µAVGS=0 30 V

Break dow n Voltage

I

DSS

I

GSS

Zero Gate Voltage
Drain Current (V

GS

Gat e- bod y Leakage
Current (V

DS

=0)

=0)

V

=MaxRating

DS

=MaxRating Tc=125oC

V

DS

V

= ± 20 V ± 100 nA

GS

1

10

ON(∗)

Symbol Parameter Test Conditions Min. Typ. Max. U nit

V

GS(th)

R

DS(on)

I

D(on)

Gate Threshold Voltage VDS=VGSID= 250 µA12.5V
Sta t ic Dr ain -s ource O n

Resistance
On State Drain Current VDS>I

VGS=10V ID=27.5A
V

=4.5V ID=27.5A

GS

D(on)xRDS(on)max

0.01

0.015

0.013

0.021

55 A

VGS=10V

DYNAMIC

Symbol Parameter Test Con ditions Min. Typ. Max. Unit

g

(∗)Forward

fs

Tr ansc on duc tance

C

C

C

Input C apac i t ance

iss

Out put Capacitanc e

oss

Reverse T r ansfer

rss

Capacit a nc e

VDS>I

D(on)xRDS(on)maxID

=27. 5 A 40 S

VDS=25V f=1MHz VGS= 0 1450

390
150

µA
µ

Ω
Ω

pF
pF
pF

A

2/8

STB55NF03L

ELECTRICAL CHARACTERISTICS

(continued)

SWITCHINGON

Symbol Parameter Test Con ditions Min. Typ. Max. Unit

t

d(on)

t

Tur n-on Delay Time
Rise T i me

r

VDD=15V ID= 27.5 A
R

=4.7

G

Ω

VGS=4.5V

25

280

(Resis t iv e Load, see f ig. 3)

Q
Q
Q

Tot al G at e Char ge

g

Gat e- Source Char g e

gs

Gate-Drain Charge

gd

VDD=24V ID=55A VGS=4.5V 25

11
12

35 nC

SWITCHINGOFF

Symbol Parameter Test Con ditions Min. Typ. Max. Unit

t

d(off)

Tur n-of f Delay Time

t

Fall T ime

f

VDD=15V ID= 27.5 A

=4.7 Ω VGS=4.5V

R

G

40
60

(Resis t iv e Load, see f ig. 3)

SOURCEDRAINDIODE

Symbol Parameter Test Con ditions Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

Q

I

RRM

(∗) Pulsed: Pulse duration = 300µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area

Source-drain Current

(•)

Source-drain Current

55

220

(pulsed)

(∗)ForwardOnVoltage ISD=55A VGS=0 1.3 V

Reverse Re covery

rr

Time
Reverse Re covery

rr

ISD= 55 A di/dt = 100 A/µs

=15V Tj=150oC

V

DD

(see test circuit, fig. 5)

45

52
Charge
Reverse Re covery

2.3

Current

ns
ns

nC
nC

ns
ns

A
A

ns

nC

A

SafeOperating Area ThermalImpedance

3/8

STB55NF03L

OutputCharacteristics

Transconductance

TransferCharacteristics

Static Drain-sourceOn Resistance

Gate Charge vs Gate-sourceVoltage

4/8

CapacitanceVariations

STB55NF03L

NormalizedGate ThresholdVoltage vs
Temperature

Source-drainDiode Forward Characteristics

NormalizedOn Resistancevs Temperature

5/8

STB55NF03L

Fig. 1

: UnclampedInductive LoadTest Circuit

Fig. 3: Switching Times Test Circuits For
ResistiveLoad

Fig. 2

: UnclampedInductiveWaveform

Fig. 4: Gate Charge test Circuit

Fig. 5

: Test Circuit For InductiveLoad Switching

And Diode Recovery Times

6/8

TO-263 (D2PAK) MECHANICAL DATA

STB55NF03L

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181

A1 2.49 2.69 0.098 0.106

B 0.7 0.93 0.027 0.036

B2 1.14 1.7 0.044 0.067

C 0.45 0.6 0.017 0.023

C2 1.21 1.36 0.047 0.053

D 8.95 9.35 0.352 0.368
E 10 10.4 0.393 0.409

G 4.88 5.28 0.192 0.208

L 15 15.85 0.590 0.624
L2 1.27 1.4 0.050 0.055
L3 1.4 1.75 0.055 0.068

mm inch

D

A

C2

DETAIL”A”

C

A2

DETAIL”A”

A1

B2

E

L2

L

L3

B

G

P011P6/E

7/8

STB55NF03L

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subjectto change without notice. This publication supersedes andreplaces all information previouslysupplied. STMicroelectronicsproducts
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