Page 1
1/14November 2003
STP4NC80Z - STP4NC80ZFP
STB4NC80Z - STB4NC80Z-1
N-CHANNEL 800V - 2.4Ω - 4A TO-220/FP/D2PAK/I2PAK
Zener-Protected PowerMESH™III MOSFET
TO-220
1
2
3
TO-220FP
1
2
3
I2PAK
(Tabless TO-220)
1
3
D2PAK
■ TYPICAL R
DS
(on) = 2.4 Ω
■ EXTREMELY HIGH dv/dtAND CAPABILITY
GATE-TO- SO URCE ZENER DIODES
■ 100% AVALANCHE TESTED
■ V ER Y LOW GATE INPUT RESISTANCE
■ GAT E CHARGE MINIMIZED
DESCRIPTION
The third generation of MESH OVERLAY™ Power
MOSFETs for very high v oltage exhibits unsurpassed on-resistan ce pe r unit area wh ile integrating back-to-back Zener diode s between gat e and
source. Such arrangement gives extra ESD capability with higher ruggedness pe rformanc e as requested by a large variety of single-swit c h
applications.
APPLICATIONS
■ S INGLE -ENDED S MPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
■ WELDING EQUIPMENT
ORDERING INFORMATION
TYPE V
DSS
R
DS(on)
I
D
STP4NC80Z/FP 800V < 2.8 Ω 4A
STB4NC80Z/-1 800V < 2.8 Ω 4A
SALES TYPE MARKING PACKAGE PACKAGING
STP4NC80Z P4NC80Z TO-220 TUBE
STP4NC80ZFP P4NC80ZFP TO-220FP TUBE
STB4NC80ZT4 B4NC80Z
D
2
PAK
TAPE & REEL
STB4NC80Z-1 B4NC80Z
I
2
PAK
TAPE & REEL
Page 2
STP4NC80Z - STP4NC80ZFP - S TB4N C 80Z - STB4NC80Z-1
2/14
ABSOLUTE MAXIMUM RATINGS
(•)Pulse width limited by safe operating area
(1)I
SD
≤4A, di/dt ≤100A/µs,VDD≤ V
(BR)DSS,Tj≤TJMAX
.
(*)Pulse width Limited by maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol Parameter Value Unit
STP(B)4NC80Z(-1) STP4NC80ZFP
V
DS
Drain-source Voltage (VGS=0)
800 V
V
DGR
Drain-gate Voltage (RGS=20kΩ)
800 V
V
GS
Gate- source Voltage ± 25 V
I
D
Drain Current (continuos) at TC= 25°C
4 4(*) A
I
D
Drain Current (continuos) at TC= 100°C
2.5 2.5(*) A
IDM(●)
Drain Current (pulsed) 16 16(*) A
P
TOT
Total Dissipation at TC= 25°C
100 35 W
Derating Factor 0.8 0.28 W/°C
I
GS
Gate-source Current ±50 mA
V
ESD(G-S)
Gate source ESD(HBM-C=100pF, R=15KΩ) 2.5 KV
dv/dt(1) Peak Diode Recovery voltage slope 3 V/ns
V
ISO
Insulation Winthstand Voltage (DC) -- 2000 V
T
stg
Storage Temperature –65 to 150 °C
T
j
Max. Operating Junction Temperature 150 °C
TO-220 / D
2
PAK /
I
2
PAK
TO-220FP
Rthj-case Thermal Resistance Junction-case Max 1.25 3.57 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 30 °C/W
T
l
Maximum Lead Temperature For Soldering Purpose 300 °C
Symbol Parameter Max Value Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
4A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, ID=IAR,VDD=50V)
225 mJ
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
ID= 250 µA, VGS= 0 800 V
∆BV
DSS
/∆TJBreakdown Voltage Temp.
Coefficient
ID=1mA,VGS= 0 0.9 V/°C
I
DSS
Zero Gate Voltage
Drain Current (V
GS
=0)
V
DS
= Max Rating
1µA
VDS= Max Rating, TC= 125 °C
50 µA
I
GSS
Gate-body Leakage
Current (V
DS
=0)
V
GS
= ±20V ±10 µA
Page 3
3/14
STP4NC80Z - STP4NC80ZFP - STB4NC80Z - STB4NC80Z-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
ON (1)
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
Gate Threshold Voltage
V
DS=VGS,ID
= 250µA
345V
R
DS(on)
Static Drain-source On
Resistance
VGS=10V,ID=2A
2.4 2.8 Ω
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
fs
(1) Forward Transconductance VDS>I
D(on)xRDS(on)max,
ID=2A
4S
C
iss
Input Capacitance
V
DS
=25V,f=1MHz,VGS=0
1200 pF
C
oss
Output Capacitance 90 pF
C
rss
Reverse Transfer
Capacitance
11 pF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
Turn-on Delay Time
V
DD
=400V,ID=2A
R
G
= 4.7Ω VGS=10V
(see test circuit, Figure 3)
27 ns
t
r
Rise Time 10 ns
Q
g
Total Gate Charge
V
DD
=640V,ID= 4A,
VGS=10V
27 36.5 nC
Q
gs
Gate-Source Charge 7 nC
Q
gd
Gate-Drain Charge 10 nC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
Off-voltage Rise Time
V
DD
= 640V, ID=4A,
R
G
=4.7Ω, VGS= 10V
(see test circuit, Figure 5)
11 ns
t
f
Fall Time 10 ns
t
c
Cross-over Time 24 ns
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
Source-drain Current 4 A
I
SDM
(2)
Source-drain Current (pulsed) 16 A
V
SD
(1)
Forward On Voltage
ISD= 4 A, VGS=0
1.6 V
t
rr
Reverse Recovery Time
I
SD
= 4 A, di/dt = 100A/µs,
VDD=50V,Tj= 150°C
(see test circuit, Figure 5)
560 ns
Q
rr
Reverse Recovery Charge 3.4 µC
I
RRM
Reverse Recovery Current 13 A
Page 4
STP4NC80Z - STP4NC80ZFP - S TB4N C 80Z - STB4NC80Z-1
4/14
GATE-SOURCE ZENER DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. ∆V
BV
= αT(25°-T)BV
GSO
(25°)
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIOD ES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’ s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionall y
be applied from gate to sourc e. In t his respect the Zener voltage is appropriate to achieve an efficient
and cost-effective intervention to prot ec t the device’s integrity. These integrated Zener diodes thus avoid
the usage of external components.
Symbol Parameter Test Conditions Min. Typ. Max. Unit
BV
GSO
Gate-Source Breakdown
Voltage
Igs=± 1mA (Open Drain) 25 V
αT Voltage Thermal Coefficient T=25°C Note(3) 1.3
10
-4
/°C
Rz Dynamic Resistance
I
D
=50mA,
90 Ω
Page 5
5/14
STP4NC80Z - STP4NC80ZFP - STB4NC80Z - STB4NC80Z-1
Safe Operating Area For TO-220FPSafe Operating Area For TO-220/D²PAK/I²PA K
Output Characteristics
Thermal Impedance For TO-220/D²PAK/I²PA K
Thermal Impedance For TO-220FP
Transfer Characteristics
Page 6
STP4NC80Z - STP4NC80ZFP - S TB4N C 80Z - STB4NC80Z-1
6/14
Normalized On Resistance vs TemperatureNormalized Gate Thresho ld Vo ltag e vs Temp.
Capacitance VariationsGate Charge vs Gate-source Voltage
Static Drain-source On ResistanceTransconductance
Page 7
7/14
STP4NC80Z - STP4NC80ZFP - STB4NC80Z - STB4NC80Z-1
Source-drain Diode Forward Characteristics
Page 8
STP4NC80Z - STP4NC80ZFP - S TB4N C 80Z - STB4NC80Z-1
8/14
Fig. 5: Test Circuit For Inductive Load Switching
And Di ode Recovery Times
Fig. 4: Gate Charge test Circuit
Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuits For
Resistive Load
Page 9
9/14
STP4NC80Z - STP4NC80ZFP - STB4NC80Z - STB4NC80Z-1
DIM.
mm. inch
MIN. TYP MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
b 0.61 0.88 0.024 0.034
b1 1.15 1.70 0.045 0.066
c 0.49 0.70 0.019 0.027
D 15.25 15.75 0.60 0.620
E 10 10.40 0.393 0.409
e 2.40 2.70 0.094 0.106
e1 4.95 5.15 0.194 0.202
F 1.23 1.32 0.048 0.052
H1 6.20 6.60 0.244 0.256
J1 2.40 2.72 0.094 0.107
L 13 14 0.511 0.551
L1 3.50 3.93 0.137 0.154
L20 16.40 0.645
L30 28.90 1.137
øP 3.75 3.85 0.147 0.151
Q 2.65 2.95 0.104 0.116
TO-220 MECHANICAL DATA
Page 10
STP4NC80Z - STP4NC80ZFP - S TB4N C 80Z - STB4NC80Z-1
10/14
L2
A
B
D
E
H
G
L6
F
L3
G1
123
F2
F1
L7
L4
L5
DIM.
mm. inch
MIN. TYP MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 .0385 0.417
L5 2.9 3.6 0.114 0.141
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126
TO-220FP MECHANICAL DATA
Page 11
11/14
STP4NC80Z - STP4NC80ZFP - STB4NC80Z - STB4NC80Z-1
DIM.
mm inch
MIN. TYP. MAX. MIN. T YP. MAX.
A 4.4 4.6 0.173 0.181
A1 2.49 2.69 0.098 0.106
B 0.7 0.93 0.027 0.036
B2 1.14 1.7 0.044 0.067
C 0.45 0.6 0.017 0.023
C2 1.23 1.36 0.048 0.053
D 8.95 9.35 0.352 0.368
e 2.4 2.7 0.094 0.106
E 10 10.4 0.393 0.409
L 13.1 13.6 0.515 0.531
L1 3.48 3.78 0.137 0.149
L2 1.27 1.4 0.050 0.055
L
L1
B2
B
D
E
A
C2
C
A1
L2
e
P011P5/E
TO-262 (I2PAK) MECHANICAL DATA
Page 12
STP4NC80Z - STP4NC80ZFP - S TB4N C 80Z - STB4NC80Z-1
12/14
1
DIM.
mm. inch
MIN. TYP MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
A1 2.49 2.69 0.098 0.106
A2 0.03 0.23 0.001 0.009
B 0.7 0.93 0.027 0.036
B2 1.14 1.7 0.044 0.067
C 0.45 0.6 0.017 0.023
C2 1.23 1.36 0.048 0.053
D 8.95 9.35 0.352 0.368
D1 8 0.315
E 10 10.4 0.393
E1 8.5 0.334
G 4.88 5.28 0.192 0.208
L 15 15.85 0.590 0.625
L2 1.27 1.4 0.050 0.055
L3 1.4 1.75 0.055 0.068
M 2.4 3.2 0.094 0.126
R 0.4 0.015
V2 0º 4º
D2PAK MECHANICAL DATA
3
Page 13
13/14
STP4NC80Z - STP4NC80ZFP - STB4NC80Z - STB4NC80Z-1
TAPE AND REEL SHIPMENT (suffix ”T4”)*
TUBE SHIPMENT (no suffix)*
D2PAK FOOTPRINT
* on sales type
DIM.
mm inch
MIN. MAX. MIN. MAX.
A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0795
G 24.4 26.4 0.960 1.039
N 100 3.937
T 30.4 1.197
BASE QTY BULK QTY
1000 1000
REEL MECHANICAL DATA
DIM.
mm inch
MIN. MAX. MIN. MAX.
A0 10. 5 10.7 0.413 0.421
B0 15.7 15 .9 0.618 0.626
D 1.5 1.6 0.059 0.063
D1 1.59 1.61 0. 062 0.063
E 1.65 1.85 0.065 0.073
F 11.4 11.6 0.449 0.456
K0 4.8 5.0 0.189 0.197
P0 3.9 4.1 0. 153 0.161
P1 11.9 12.1 0.468 0.476
P2 1.9 2.1 0. 075 0.082
R 50 1.574
T 0.25 0.35 0.0098 0.0137
W 23.7 24.3 0.933 0.956
TAPE MECHANICAL DATA
Page 14
STP4NC80Z - STP4NC80ZFP - S TB4N C 80Z - STB4NC80Z-1
14/14
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of u se of such inf ormat ion nor for any in fring ement of p aten ts or othe r ri ghts of th ird p arties whic h may resul t f rom
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
© The ST logo is a registered trademark of STMicroelectronics
© 2003 STMicroelectronics - Printed in Italy - All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco
Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.
© http://www.st.com
Loading...