Datasheet STP4NC80Z, STB4NC80Z-1, STB4NC80Z Datasheet (SGS Thomson Microelectronics)

1/13December 2002

STP4NC80Z - STP4NC80ZFP

STB4NC80Z - STB4NC80Z-1

N-CHANNEL 800V - 2.4Ω - 4A TO-220/FP/D2PAK/I2PAK

Zener-Protected PowerMESH™III MOSFET

(1)ISD≤4A, di/dt ≤100A/µs, VDD≤ V

(BR)DSS,Tj≤TJMAX

.

(*)Pulse width Limited by maximum temperature allowed

TO-220

1

2

3

TO-220FP

1

2

3

I2PAK

(Tabless TO-220)

1

3

D2PAK

■ TYPICAL R

DS

(on) = 2.4 Ω

■ EXTREMELY HIGH d v/dt AND CAPABILITY

GATE-TO- S O URCE ZENER DIODES

■ 100% AVALANCHE TESTED

■ V ER Y LOW GATE INPUT RESISTANCE

■ GAT E CHARGE MINIMIZED

DESCRIPTION

The third generation of MESH OVERLAY™ Power
MOSFETs for very high voltage exhibi ts unsurpassed
on-resistance per unit area w hile integrat ing back-to­back Zener diodes between gate and source.Such ar­rangement gives extra ESD capability with higher rug­gedness performance as requested by a large variety
of single-switch applications.

APPLICATIONS

■ S INGLE -ENDED S MPS IN MONITORS,

COMPUTER AND INDUSTRIAL APPLICATION

■ WELDING EQUIPMENT

ABSOLUTE MAXIMUM RATINGS

(•)Pulse width limited by safe operating area

TYPE V

DSS

R

DS(on)

I

D

STP4NC80Z/FP 800V < 2.8 Ω 4A
STB4NC80Z/-1 800V < 2.8 Ω 4A

Symbol Parameter Value Unit

STP(B)4NC80Z(-1) STP4NC80ZFP

V

DS

Drain-source Voltage (VGS=0)

800 V

V

DGR

Drain-gate Voltage (RGS=20kΩ)

800 V

V

GS

Gate- source Voltage ± 25 V

I

D

Drain Current (continuos) at TC= 25°C

4 4(*) A

I

D

Drain Current (continuos) at TC= 100°C

2.5 2.5(*) A

I

DM

(●)

Drain Current (pulsed) 16 16(*) A

P

TOT

Total Dissipation at TC= 25°C

100 35 W

Derating Factor 0.8 0.28 W/°C

I

GS

Gate-source Current ±50 mA

V

ESD(G-S)

Gate source ESD(HBM-C=100pF, R=15KΩ) 2.5 KV

dv/dt(1) Peak Diode Recovery voltage slope 3 V/ns

V

ISO

Insulation Winthstand Voltage (DC) -- 2000 V

T

stg

Storage Temperature –65 to 150 °C

T

j

Max. Operating Junction Temperature 150 °C

STP4NC80Z - STP4NC80ZFP - S TB4N C 80Z - STB4NC80Z-1

2/13

THERMAL DATA

AVALANCHE CHARACTERISTICS

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)

OFF

ON (1)

DYNAMIC

TO-220 / D2PAK /

I

2

PAK

TO-220FP

Rthj-case Thermal Resistance Junction-case Max 1.25 3.57 °C/W

Rthj-amb Thermal Resistance Junction-ambient Max 30 °C/W

T

l

Maximum Lead Temperature For Soldering Purpose 300 °C

Symbol Parameter Max Value Unit

I

AR

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T

j

max)

4A

E

AS

Single Pulse Avalanche Energy
(starting T

j

= 25 °C, ID=IAR,VDD=50V)

225 mJ

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

Drain-source
Breakdown Voltage

ID= 250 µA, VGS= 0 800 V

∆BV

DSS

/∆TJBreakdown Voltage Temp.

Coefficient

ID=1mA,VGS= 0 0.9 V/°C

I

DSS

Zero Gate Voltage
Drain Current (V

GS

=0)

V

DS

= Max Rating

1µA

VDS= Max Rating, TC= 125 °C

50 µA

I

GSS

Gate-body Leakage
Current (V

DS

=0)

V

GS

= ±20V ±10 µA

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

Gate Threshold Voltage

V

DS=VGS,ID

= 250µA

345V

R

DS(on)

Static Drain-source On
Resistance

VGS=10V,ID=2A

2.4 2.8 Ω

Symbol Parameter Test Conditions Min. Typ. Max. Unit

g

fs

(1) Forward Transconductance VDS>I

D(on)xRDS(on)max,

ID=2A

4S

C

iss

Input Capacitance

V

DS

=25V,f=1MHz,VGS=0

1200 pF

C

oss

Output Capacitance 90 pF

C

rss

Reverse Transfer
Capacitance

11 pF

3/13

STP4NC80Z - STP4NC80ZFP - STB4NC80Z - STB4NC80Z-1

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON

SWITCHING OFF

SOURCE DRAIN DIODE

GATE-SOURCE ZENER DIODE

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

3. ∆V

BV

= αT(25°-T)BV

GSO

(25°)

PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES

The built-in back-to-back Zener diodes have specifically been des igned to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionall y
be applied from gate to sourc e. In t his respect the Zener voltage is appropriate to achieve an efficient
and cost-effective intervention to protectthe device’sintegrity. T hese integrated Zener diodes thus avoid
the usage of external components.

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

Turn-on Delay Time

V

DD

=400V,ID=2A
RG= 4.7Ω VGS=10V
(see test circuit, Figure 3)

27 ns

t

r

Rise Time 10 ns

Q

g

Total Gate Charge

V

DD

=640V,ID= 4A,
V

GS

=10V

27 36.5 nC

Q

gs

Gate-Source Charge 7 nC

Q

gd

Gate-Drain Charge 10 nC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

r(Voff)

Off-voltage Rise Time

V

DD

= 640V, ID=4A,
RG=4.7Ω, VGS= 10V
(see test circuit, Figure 5)

11 ns

t

f

Fall Time 10 ns

t

c

Cross-over Time 24 ns

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

Source-drain Current 4 A

I

SDM

(2)

Source-drain Current (pulsed) 16 A

V

SD

(1)

Forward On Voltage

ISD= 4 A, VGS=0

1.6 V

t

rr

Reverse Recovery Time

I

SD

= 4 A, di/dt = 100A/µs,

V

DD

=50V,Tj= 150°C

(see test circuit, Figure 5)

560 ns

Q

rr

Reverse Recovery Charge 3.4 µC

I

RRM

Reverse Recovery Current 13 A

Symbol Parameter Test Conditions Min. Typ. Max. Unit

BV

GSO

Gate-Source Breakdown
Voltage

Igs=± 1mA (Open Drain) 25 V

αT Voltage Thermal Coefficient T=25°C Note(3) 1.3

10

-4

/°C

Rz Dynamic Resistance

I

D

=50mA,

90 Ω

STP4NC80Z - STP4NC80ZFP - S TB4N C 80Z - STB4NC80Z-1

4/13

Safe Operating Area For TO-220FPSafe Operating Area For TO-220/D²PAK/I²PA K

Output Characteristics

Thermal Impedance For TO-220/D²PAK/I²PA K

Thermal Impedance For TO-220FP

Transfer Characteristics

5/13

STP4NC80Z - STP4NC80ZFP - STB4NC80Z - STB4NC80Z-1

Normalized On Resistance vs TemperatureNormalized Gate Thresho ld Vo ltag e vs Temp.

Capacitance VariationsGate Charge vs Gate-source Voltage

Static Drain-source On ResistanceTransconductance

STP4NC80Z - STP4NC80ZFP - S TB4N C 80Z - STB4NC80Z-1

6/13

Source-drain Diode Forward Characteristics

7/13

STP4NC80Z - STP4NC80ZFP - STB4NC80Z - STB4NC80Z-1

Fig. 5: Test Circuit For Inductive Load Switching

And Di ode Recovery Times

Fig. 4: Gate Charge test Circuit

Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit

Fig. 3: Switching Times Test Circuits For

Resistive Load

STP4NC80Z - STP4NC80ZFP - S TB4N C 80Z - STB4NC80Z-1

8/13

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107

D1 1.27 0.050

E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067

G 4.95 5.15 0.194 0.203

G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409

L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154

DIA. 3.75 3.85 0.147 0.151

L6

A

C

D

E

D1

F

G

L7

L2

Dia.

F1

L5

L4

H2

L9

F2

G1

TO-220 MECHANICAL DATA

P011C

9/13

STP4NC80Z - STP4NC80ZFP - STB4NC80Z - STB4NC80Z-1

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027

F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067

G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106

H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366

Ø 3 3.2 0.118 0.126

L2

A

B

D

E

H

G

L6

¯

F

L3

G1

123

F2

F1

L7

L4

TO-220FP MECHANICAL DAT A

STP4NC80Z - STP4NC80ZFP - S TB4N C 80Z - STB4NC80Z-1

10/13

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181

A1 2.49 2.69 0.098 0.106

B 0.7 0.93 0.027 0.036

B2 1.14 1.7 0.044 0.067

C 0.45 0.6 0.017 0.023

C2 1.23 1.36 0.048 0.053

D 8.95 9.35 0.352 0.368
e 2.4 2.7 0.094 0.106
E 10 10.4 0.393 0.409

L 13.1 13.6 0.515 0.531
L1 3.48 3.78 0.137 0.149
L2 1.27 1.4 0.050 0.055

L

L1

B2

B

D

E

A

C2

C

A1

L2

e

P011P5/E

TO-262 (I2PAK) MECHANICAL DATA

11/13

STP4NC80Z - STP4NC80ZFP - STB4NC80Z - STB4NC80Z-1

1

DIM.

mm. inch

MIN. TYP MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181
A1 2.49 2.69 0.098 0.106
A2 0.03 0.23 0.001 0.009

B 0.7 0.93 0.027 0.036
B2 1.14 1.7 0.044 0.067

C 0.45 0.6 0.017 0.023

C2 1.23 1.36 0.048 0.053

D 8.95 9.35 0.352 0.368

D1 8 0.315

E 10 10.4 0.393
E1 8.5 0.334

G 4.88 5.28 0.192 0.208

L 15 15.85 0.590 0.625
L2 1.27 1.4 0.050 0.055
L3 1.4 1.75 0.055 0.068

M 2.4 3.2 0.094 0.126
R 0.4 0.015

V2 0º 4º

D2PAK MECHANICAL DATA

3

STP4NC80Z - STP4NC80ZFP - S TB4N C 80Z - STB4NC80Z-1

12/13

TAPE AND REEL SHIPMENT (suffix ”T4”)*

TUBE SHIPMENT (no suffix)*

D2PAK FOOTPRINT

* on sales type

DIM.

mm inch

MIN. MAX. MIN. MAX.

A 330 12.992

B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0795
G 24.4 26.4 0.960 1.039
N 100 3.937
T 30.4 1.197

BASE QTY BULK QTY

1000 1000

REEL MECHANICAL DATA

DIM.

mm inch

MIN. MAX. MIN. MAX.

A0 10. 5 10.7 0.413 0.421
B0 15.7 15 .9 0.618 0.626

D 1.5 1.6 0.059 0.063

D1 1.59 1.61 0. 062 0.063

E 1.65 1.85 0.065 0.073

F 11.4 11.6 0.449 0.456
K0 4.8 5.0 0.189 0.197
P0 3.9 4.1 0. 153 0.161
P1 11.9 12.1 0.468 0.476
P2 1.9 2.1 0. 075 0.082

R 50 1.574

T 0.25 0.35 0.0098 0.0137

W 23.7 24.3 0.933 0.956

TAPE MECHANICAL DATA

13/13

STP4NC80Z - STP4NC80ZFP - STB4NC80Z - STB4NC80Z-1

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility f or t he
consequences of use of su ch in formation nor for any in fringement of patents or other rights of third parties w hich may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously suppli ed. STMi croelect ronics pr oducts are not author ized for use as cr itical component s in li fe suppo rt devi ces or
systems without express written approval of STMicroelectronics.

© The ST logo is a registered trademark of STMicroelectronics

© 2002 STMicroelectronics - Printed in Italy - All Rights Reserved

STMicroelectronics GROUP OF COMPANIES

Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco

Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.

© http://www.st.com