Datasheet STP4NC60FP, STP4NB30, STP4NB30FP, STP4NC60, STB4NC60-1 Datasheet (SGS Thomson Microelectronics)

STP4NC60 - STP4NC60FP

STB4NC60-1

N-CHANNEL 600V - 1.8Ω - 4.2A TO-220/TO-220FP/I2PAK

PowerMesh™II MOSFET

TYPE V

STP4NC60
STP4NC60FP
STB4NC60-1

■ TYPICAL R

■ EXTREMELY HIGH dv/dt CAPABILITY

■ 100% AVALANCHE TESTED

■ NEW HIGH VOLTAGE BENCHMARK

■ GATE CHARGE MINIMIZED

DS

DSS

600V
600V
600V

(on) = 1.8Ω

R

DS(on)

<2.2Ω
<2.2Ω
<2.2Ω

I

D

4.2A

4.2A

4.2A

DESCRIPTION

The PowerMESH
generation of MESH OVERLAY

™II is the evolution of the first

™. The layout re-

finements introduced greatly improve the Ron*area
figure of m erit while keeping the device at the lea d­ing edge for what concerns swithing speed, gate
charge and ruggedness.

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ SWITH MODE POWER SUPPLIES (SMPS)

■ DC-AC CO NV ERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVERS

TO-220

1

3

2

TO-220FP

I2PAK

(Tabless TO-220)

INTERNAL SCHEMATIC DIAGRAM

3

2

1

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

STP(B)4NC60(-1) STP4NC60FP

V

DS

V

DGR

V

GS

I

D

I

D

I

DM

P

TOT

dv/dt(1) Peak Diode Recovery voltage slope 3.5 3.5 V/ns

V

ISO

T

stg

T

(•)Pulse width limited by safe operating area

≤4.2A, di/dt ≤300A/µs, VDD≤ V

(1)I

SD

Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)

600 V

600 V
Gate- source Voltage ±30 V
Drain Current (continuos) at TC= 25°C
Drain Current (continuos) at TC= 100°C

()

Drain Current (pulsed) 16.8 16.8(*) A
Total Dissipation at TC= 25°C

4.2 4.2(*) A

2.6 2.6(*) A

100 35 W

Derating Factor 0.8 0.28 W/°C

Insulation Withstand Voltage (DC) - 2500 V
Storage Temperature
Max. Operating Junction Temperature

j

(BR)DSS,Tj≤TJMAX.

(*)Limited only by maximum Temperature allowed

–65to150 °C

1/10April 2003

STP4NC60/FP/STB4NC60-1

THERMAL DATA

TO-220/I2PAK

Rthj-case Thermal Resistance Junction-case Max 1.25 3.57 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W

T

Maximum Lead Temperature For Soldering Purpose 300 °C

l

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Unit

I

AR

E

AS

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T

max)

j

Single Pulse Avalanche Energy
(starting T

= 25 °C, ID=IAR,VDD=50V)

j

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

I

DSS

I

GSS

Drain-source
Breakdown Voltage

Zero Gate Voltage
Drain Current (V

GS

Gate-body Leakage
Current (V

DS

=0)

=0)

ID= 250 µA, VGS= 0 600 V

V

= Max Rating

DS

= Max Rating, TC= 125 °C

V

DS

V

= ±30V ±100 nA

GS

TO-220FP

4.2 A

250 mJ

1µA

50 µA

ON (1)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

Gate Threshold Voltage
Static Drain-source On

V

DS=VGS,ID

VGS=10V,ID=1.5 A

= 250µA

234V

1.8 2.2 Ω

Resistance

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(1) Forward Transconductance VDS>I

g

fs

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance 72 pF
Reverse Transfer

Capacitance

D(on)xRDS(on)max,

ID=2A

V

=25V,f=1MHz,VGS=0

DS

3.7 S

475 pF

10 pF

2/10

STP4NC60/FP/STB4NC60-1

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

t

d(on)

Q
Q
Q

t

r

g
gs
gd

Turn-on Delay Time
Rise Time 14 ns
Total Gate Charge

Gate-Source Charge 2.5 nC
Gate-Drain Charge 9 nC

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

r(Voff)

t
t

f

c

Off-voltage Rise Time
Fall Time 19 ns
Cross-over Time 24 ns

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

VSD(1)

t

rr

Q

rr

I

RRM

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

Source-drain Current 4.2 A

(2)

Source-drain Current (pulsed) 16.8 A
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge 2.7 µC
Reverse Recovery Current 9 A

=300V,ID=2A

DD

R

= 4.7Ω VGS=10V

G

(see test circuit, Figure 3)
V

=480V,ID= 4A,

DD

=10V

V

GS

V

= 480V, ID=4A,

DD

RG=4.7Ω, VGS= 10V
(see test circuit, Figure 5)

ISD= 4.2A, VGS=0
I

= 4A, di/dt = 100A/µs,

SD

=100V,Tj=150°C

V

DD

(see test circuit, Figure 5)

14 ns

16.5 23.1 nC

15 ns

1.6 V

600 ns

Safe Operating Area for TO-220FPSafe Operating Area for TO-220 / I2PAK

3/10

STP4NC60/FP/STB4NC60-1

Thermal Impedance for To-220 / I²PAK

Output Characteristics

Thermal Impedance for TO-220FP

Transfer Characteristics

4/10

Static Drain-source On ResistanceTransconductance

STP4NC60/FP/STB4NC60-1

Capacitance VariationsGate Charge vs Gate-so urc e V oltage

Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Tem perature

Source-drain Diode Forward Characteristics

5/10

STP4NC60/FP/STB4NC60-1

Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Lo ad Test Circuit

Fig. 3: Switching Times Test Circuits For

Resistive Load

Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times

Fig. 4: Gate Charge test Circuit

6/10

E

TO-220 MECHANICAL DATA

P011C

STP4NC60/FP/STB4NC60-1

DIM.

A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107

D1 1.27 0.050

E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067

G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154

DIA. 3.75 3.85 0.147 0.151

MIN. TYP. MAX. MIN. TYP. MAX.

mm inch

A

C

D

L5

Dia.

L7

D1

L6

L2

L9

F1

G1

F

H2

G

F2

L4

7/10

STP4NC60/FP/STB4NC60-1

TO-220FP MECHANICAL DATA

DIM.

A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027
F 0.75 1 0.030 0.039

F1 1.15 1.5 0.045 0.067
F2 1.15 1.5 0.045 0.067

G 4.95 5.2 0.195 0.204

G1 2.4 2.7 0.094 0.106

H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 .0385 0.417
L5 2.9 3.6 0.114 0.141
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366

Ø 3 3.2 0.118 0.126

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

E

A

D

B

8/10

L3

L6

L7

F1

F

G1

H

F2

123

L4

L2

L5

G

STP4NC60/FP/STB4NC60-1

TO-262 (I2PAK) MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181

A1 2.49 2.69 0.098 0.106

B 0.7 0.93 0.027 0.036

B2 1.14 1.7 0.044 0.067

C 0.45 0.6 0.017 0.023

C2 1.23 1.36 0.048 0.053

D 8.95 9.35 0.352 0.368

e 2.4 2.7 0.094 0.106

E 10 10.4 0.393 0.409

L 13.1 13.6 0.515 0.531

L1 3.48 3.78 0.137 0.149
L2 1.27 1.4 0.050 0.055

mm inch

C

A

A1

C2

B2

B

e

E

L1

L2

D

L

P011P5/E

9/10

STP4NC60/FP/STB4NC60-1

10/10

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such informa tion n or for an y infring ement of patent s or other rig hts of third part ies which may resu lt from its use . No l i cen se i s
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical compo nents in life support devices or systems without express written approval of STMicroelectronics.

Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco -

The ST logo is a trademark of STMicroelectronics

© 2000 STMicroelectronics – Printed in Italy – All Rights Reserved

STMicroelectronics GROUP OF COMPANIES

Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.

http://www.st.com