Datasheet STB4NB80 Datasheet (SGS Thomson Microelectronics)

®

N - CHANNEL 800V - 3Ω - 4A - TO -220/TO-220FP

TYPE V

STB4NB80
STB4NB80FP

■ TYPICAL R

■ EXTREME LY HIGH dv/dt CAP A BI LIT Y

■ 100% AVALANCHE TESTED

■ VERY LOW INTRINSIC CAPACITANCES

■ GATE CHARGE MINIMIZED

DS(on)

DSS

800 V
800 V

= 3 Ω

DESCRIPTION

Using the latest high voltage MESH OVERLAY
process, SGS-Thomson has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching char acteristics.

R

DS(on)

3.3 Ω

3.3 Ω

I

D

4 A
4 A

STB4NB80

PowerMESH MOSFET

PRELIMINARY DATA

3

1

2

D

PAK

TO-263

(Suffix "T4")

INTER NAL SCH E M ATI C DIAG RA M

I2PAK

TO-262

(Suffix "-1")

3

2

1

APPLICATIONS

■ HIGH CURRENT, HIGH SPE ED SWI TCHING

■ SWITC H MODE POWER SU PPLIES ( SMPS)

■ DC-AC CONVE RTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

STB4NB80 STB4NB80FP

V

V

V

I

DM

P

dv/dt(1) Peak Diode Recovery voltage slope 4.5 4.5 V/ns

V

T

(•) Pulse width limited by safe operating area (1) ISD ≤4 A, di/dt ≤ 200 A/µs, VDD ≤ V
(*) Limited only by maximum temperature allowed

June 1998

Drain-source Voltage (VGS = 0) 800 V

DS

Drain- gate Voltage (RGS = 20 kΩ)

DGR

Gate-source Voltage ± 30 V

GS

I

Drain Current (continuous) at Tc = 25 oC 4 4(*) A

D

Drain Current (continuous) at Tc = 100 oC 2.4 2.4(*) A

I

D

800 V

(•) Drain Current (pulsed) 16 16 A

Total Dissipation at Tc = 25 oC10035W

tot

Derating Factor 1 0.28 W/

Insulation Withstand Voltage (DC)  2000 V

ISO

Storage Temperature -65 to 150

stg

Max. Operating Junction Temperature 150

T

j

, Tj ≤ T

(BR)DSS

JMAX

o

C

o

C

o

C

1/6

STB4NB80

THERMAL DATA

TO-263 TO-262

R

thj-case

R

thj-amb

R

thc-sink

T

AVALANCHE CHARACTERI S TICS

Symbol Parameter Max Value Unit

I

AR

E

Thermal Resistance Junction-case Max 1 3.6
Thermal Resistance Junction-ambient Max

Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose

l

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T

Single Pulse Avalanche Energy

AS

(starting T

= 25 oC, ID = IAR, V

j

ma x)

j

DD

= 50 V)

62.5

0.5

300

4A

230 mJ

o

C/W

o

C/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS (T

= 25 oC unless otherwise specified)

case

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

Drain-source

I

= 250 µA V

D

GS

= 0

800 V

Breakdown Voltage

I

DSS

I

GSS

Zero Gate Voltage
Drain Current (V

GS

Gate-body Leakage
Current (V

DS

= 0)

= 0)

= Max Rating

V

DS

V

= Max Rating Tc = 125 oC

DS

V

= ± 30 V

GS

1

50

± 100 nA

ON (∗)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

Gate Threshold

V

= VGS ID = 250 µA

DS

345V

Voltage

R

DS(on)

Static Drain-source On

VGS = 10V ID = 2 A 3 3.3 Ω

Resistance

I

D(on)

On State Drain Current VDS > I

V

= 10 V

GS

D(on)

x R

DS(on)max

4A

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

gfs (∗) Forward

Transconductance

C

C

C

Input Capacitance

iss

Output Capacitance

oss

Reverse Transfer

rss

Capacitance

VDS > I

V

DS

x R

D(on)

DS(on)max

= 25 V f = 1 MHz V

ID = 2 A 1.8 S

= 0 700

GS

95

920
126

9

12

µA
µA

pF
pF
pF

2/6

STB4NB80

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING O N

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

t

r

Turn-on Time
Rise Time

V

= 400 V ID = 2 A

DD

RG = 4.7 Ω VGS = 10 V

14

20

8

12

ns
ns

Q
Q
Q

Total Gate Charge

g

Gate-Source Charge

gs

Gate-Drain Charge

gd

V

= 640 V ID = 4 A V

DD

= 10 V 21

GS

7
9

29 nC

SWITCHING O F F

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

r(Voff)

t

t

Off-voltage Rise Time
Fall Time

f

Cross-over Time

c

V

= 640V ID = 4 A

DD

= 4.7 Ω VGS = 10 V

R

G

12

9

16

17
13
22

SOURCE DRAIN DIO DE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

4

16

I

SDM

I

SD

Source-drain Current

(•)

Source-drain Current
(pulsed)

V

(∗) Forward On Voltage ISD =4 A VGS = 0 1.6 V

SD

t

Q

Reverse Recovery

rr

Time
Reverse Recovery

rr

I

= 4 A di/dt = 100 A/µs

SD

V

= 100 V Tj = 150 oC

DD

600

3.3

Charge

I

RRM

Reverse Recovery

11

Current

(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area

nC
nC

ns
ns
ns

A
A

ns

µC

A

3/6

STB4NB80

TO-263 (D2PAK) MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.3 4.6 0.169 0.181

A1 2.49 2.69 0.098 0.106

B 0.7 0.93 0.027 0.036

B2 1.25 1.4 0.049 0.055

C 0.45 0.6 0.017 0.023

C2 1.21 1.36 0.047 0.053

D 8.95 9.35 0.352 0.368
E 10 10.28 0.393 0.404
G 4.88 5.28 0.192 0.208

L 15 15.85 0.590 0.624
L2 1.27 1.4 0.050 0.055
L3 1.4 1.75 0.055 0.068

mm inch

E

A

C2

L2

D

L

L3

B2

B

A1

C

G

P011P6/C

4/6

TO-262 (I2PAK) MECHANICAL DATA

STB4NB80

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.3 4.6 0.169 0.181
A1 2.49 2.69 0.098 0.106

B 0.7 0.93 0.027 0.036
B1 1.2 1.38 0.047 0.054
B2 1.25 1.4 0.049 0.055

C 0.45 0.6 0.017 0.023
C2 1.21 1.36 0.047 0.053

D 8.95 9.35 0.352 0.368

e 2.44 2.64 0.096 0.104

E 10 10.28 0.393 0.404

L 13.2 13.5 0.519 0.531
L1 3.48 3.78 0.137 0.149
L2 1.27 1.4 0.050 0.055

mm inch

C

A

A1

C2

B2

B

e

E

L1

L2

D

L

P011P5/C

5/6

STB4NB80

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of use of such inform ation nor for any infringe ment o f patents or other rig hts o f third par ties which ma y resul t from i ts use. N o li cen se is
granted by implicatio n or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
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