Datasheet STP3NC90ZFP, STP3NC90Z, STB3NC90Z-1 Datasheet (SGS Thomson Microelectronics)

STP3NC90Z - STP3NC90ZFP

STB3NC90Z-1

N-CH A NNEL 900V - 3.2Ω - 3.5A TO-220/TO-220FP/I2PAK

Zener-Protected PowerMESH™III MOSFET

TYPE V

DSS

STP3NC90Z/FP 900V < 3.5
STB3NC90Z-1 900V < 3.5

■ TYPICAL R

■ EXTREMELY HIGH d v/dt AND CAPA BILITY GATE

(on) = 3.2Ω

DS

R

DS(on)

I

D

Ω
Ω

3.5 A

3.5 A

TO - SOURCE ZENER DIODES

■ 100% AVALANCHE TESTED

■ VERY LOW GATE INPUT RESISTANCE

■ GATE CHARGE MINIMIZED

DESCRIPTION

The third generation of MESH OVERLAY™ Power
MOSFETs for very high voltage exhibits unsurpassed
on-resistance per unit area while integrating back-to­back Zener diodes between gate and source. Such ar­rangement gives extra ESD capability with higher rug­gedness performance as request ed b y a l arge variety
of single-switch applications.

APPLICATIONS

■ SINGLE-ENDED SMPS IN MONITORS,

COMPUTER AND INDUSTRIAL APPLICATION

■ WELDING EQUIPMENT

TO-220

3

2

1

I2PAK

(Tabless TO-220)

TO-220FP

1

3

2

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

STP(B)3NC90Z(-1) STP3NC90ZFP

V

DS

V

DGR

V

GS

I

D

I

D

I

DM

P

TOT

I

GS

V

ESD(G-S)

dv/dt Peak Diode Recovery voltage slope 3 V/ns
V

ISO

T

stg

T

j

(•)Pu l se width limited by safe operati ng area

Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)

900 V
900 V

Gate- source Voltage ± 25 V

Drain Current (continuos) at TC = 25°C
Drain Current (continuos) at TC = 100°C

(●)

Drain Current (pulsed) 14 14 A
Total Dissipation at TC = 25°C

3.5 3.5(*) A

2.2 2.2(*) A

100 35 W
Derating Factor 0.8 0.28 W/°C
Gate-source Current (*) ±50 mA
Gate source ESD(HBM-C=100pF, R=15K

Ω)

2.5 KV

Insulation Withstand Voltage (DC) -- 2000 V
Storage Temperature –65 to 150 °C
Max. Operating Junction Temperature 150 °C

(1)ISD ≤3.5A, di/dt ≤100A/µs, VDD ≤ V

(*).Limited only by maximum temperature allowed

(BR)DSS

, Tj ≤ T

JMAX

1/11January 2001

STP3NC90Z/FP/STB3NC90Z-1

THERMA L D ATA

TO-220 / I2PAK TO-220FP

Rthj-case Thermal Resistance Junction-case Max 1.25 3.57 °C/W

Rthj-amb Thermal Resistance Junction-ambient Max 62 °C/W

Rthc-sink Thermal Resistance Case-sink Typ 0.1 °C/W

T

l

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Unit

I

AR

E

AS

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

∆

BV

DSS

I

DSS

I

GSS

Maximum Lead Temperature For Soldering Purpose 300 °C

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T

max)

j

Single Pulse Avalanche Energy
(starting T

Drain-source

= 25 °C, ID = IAR, VDD = 50 V)

j

ID = 250 µA, VGS = 0 900 V

3.5 A

220 mJ

Breakdown Voltage

/∆TJBreakdown Voltage Temp.

ID = 1 mA, VGS = 0 1 V/°C

Coefficient

= Max Rating

V

Zero Gate Voltage
Drain Current (V

GS

Gate-body Leakage
Current (V

DS

= 0)

= 0)

DS

V

= Max Rating, TC = 125 °C

DS

V

= ±20V ±10 µA

GS

1µA

50 µA

ON

(1)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

V

GS(th)

R

DS(on)

Gate Threshold Voltage
Static Drain-source On

= VGS, ID = 250µA

DS

VGS = 10V, ID = 1.75 A

345V

3.2 3.5

Resistance

I

D(on)

On State Drain Current VDS > I

V

=10V

GS

D(on)

x R

DS(on)max,

3.5 A

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(1) Forward Transconductance VDS > I

g

fs

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance 78 pF
Reverse Transfer

Capacitance

I

= 1.75A

D

V

DS

D(on)

x R

DS(on)max,

= 25V, f = 1 MHz, VGS = 0

3S

1250 pF

7pF

Ω

2/11

STP3NC90Z/FP/STB3NC90Z-1

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

Q
Q
Q

t

r

g
gs
gd

Turn-on Delay Time
Rise Time

Total Gate Charge
Gate-Source Charge 8 nC
Gate-Drain Charge 10 nC

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

r(Voff)

t

t

f

c

Off-voltage Rise Time
Fall Time 10 ns
Cross-over Time 18 ns

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

VSD (1)

t

rr

Q

rr

I

RRM

Source-drain Current 3.5 A

(2)

Source-drain Current (pulsed) 14 A
Forward On Voltage
Reverse Recovery Time

Reverse Recovery Charge 4450 µC
Reverse Recovery Current 13 A

= 450 V, ID = 1.5 A

V

DD

RG= 4.7Ω VGS = 10V
(see test circuit, Figure 3)

V

= 720V, ID = 3A,

DD

VGS = 10V

V

= 720V, ID = 3 A,

DD

RG=4.7Ω, V

GS

= 10V

(see test circuit, Figure 5)

ISD = 3 A, VGS = 0
I

= 3 A, di/dt = 100A/µs,

SD

VDD = 100V, Tj = 150°C
(see test circuit, Figure 5)

28 ns
14 ns
27 38 nC

16 ns

1.6 V

712 ns

GATE-SOURCE ZENER DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

BV

GSO

Gate-Source Breakdown

Igs=± 1mA (Open Drain) 25 V

Voltage

α

T Voltage Thermal Coefficient T=25°C Note(3) 1.3

I

Rz Dynamic Resistance

Note: 1. Pulsed: Pu l se duration = 300 µs, duty cycle 1. 5 %.

2. Pulse width li mited by safe operating area .

3.∆V

= αT (25°-T) BV

BV

GSO

(25°)

= 50 mA

D

90

10

-4

/°C

Ω

PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally
be applied from gate to souce. In this respect the 25V Zener voltage is appropiate to achieve an efficient
and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid
the usage of external components.

3/11

STP3NC90Z/FP/STB3NC90Z-1

Safe Operating Area For TO-220FPSafe Operating Area For TO-220 / I²PAK

Thermal Impedance For TO-220 / I²PAK

Output Characteristics

Thermal Impedance For TO-220FP

Transfer Characteristics

4/11

STP3NC90Z/FP/STB3NC90Z-1

Static Drain-source On ResistanceTransconductance

Gate Charge vs Gate-source Voltage Capacitance Variation s

Normalized Gate Threshold Voltage vs Temp. Normalized On Resistance vs Temperature

5/11

STP3NC90Z/FP/STB3NC90Z-1

Source-drain Diode Forward Characteristics

6/11

STP3NC90Z/FP/STB3NC90Z-1

Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit

Fig. 3: Switching Times Test Circuit For

Resistive Load

Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times

Fig. 4: Gate Charge test Circuit

7/11

STP3NC90Z/FP/STB3NC90Z-1

E

TO-220 MECHANICAL DATA

DIM.

A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107

D1 1.27 0.050

E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067

G 4.95 5.15 0.194 0.203

G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409

L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154

DIA. 3.75 3.85 0.147 0.151

MIN. TYP. MAX. MIN. TYP. MAX.

mm inch

A

C

D

8/11

L5

Dia.

L7

D1

L6

L2

L9

F1

G1

F

H2

G

F2

L4

P011C

STP3NC90Z/FP/STB3NC90Z-1

TO-220FP MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027

F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067

G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106

H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366

Ø 3 3.2 0.118 0.126

mm inch

E

A

D

B

L3

L6

L7

¯

F1

F

G1

H

G

F2

123

L2

L4

9/11

STP3NC90Z/FP/STB3NC90Z-1

TO-262 (I2PAK) MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181
A1 2.49 2.69 0.098 0.106

B 0.7 0.93 0.027 0.036
B2 1.14 1.7 0.044 0.067

C 0.45 0.6 0.017 0.023
C2 1.23 1.36 0.048 0.053

D 8.95 9.35 0.352 0.368

e 2.4 2.7 0.094 0.106

E 10 10.4 0.393 0.409

L 13.1 13.6 0.515 0.531
L1 3.48 3.78 0.137 0.149
L2 1.27 1.4 0.050 0.055

mm inch

C

10/11

A

A1

C2

B2

B

e

E

L1

L2

D

L

P011P5/E

STP3NC90Z/FP/STB3NC90Z-1

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11/11