Datasheet STB3NC60 Datasheet (SGS Thomson Microelectronics)



STB3NC60

N - CHANNEL600V - 3.3Ω -3A-D2PAK/I2PAK

TYPE V

DSS

R

DS(on)

I

D

ST B3 NC60 600 V < 3 .6 Ω 3A

ν TYPICALR
ν EXTREMELY HIGHdv/dt CAPABILITY
ν 100% AVALANCHETESTED
ν VERY LOW INTRINSIC CAPACITANCES
ν GATECHARGE MINIMIZED

DS(on)

= 3.3 Ω

DESCRIPTION

The PowerMESHII is the evolution of the first
generation of MESH OVERLAY. The layout
refinements introduced greatly improve the
Ron*area figure of merit while keeping the device
at the leading edge for what concerns switching
speed, gatecharge and ruggedness.

APPLICATIONS

ν HIGH CURRENT, HIGH SPEEDSWITCHING
ν SWITCHMODEPOWER SUPPLIES (SMPS)
ν DC-ACCONVERTERSFOR WELDING

EQUIPMENTAND UNINTERRUPTIBLE
POWERSUPPLIESAND MOTORDRIVE

PowerMESH

3

2

1

I2PAK

TO-262

(Suffix”-1”)

ΙΙ MOSFET

D2PAK

TO-263

(Suffix ”T4”)

INTERNAL SCHEMATIC DIAGRAM

3

1

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Uni t

V

V

V

I

DM

P

dv/dt(

T

(•) Pulse width limited by safe operating area (1)ISD≤3A, di/dt ≤ 100 A/µs, VDD≤ V

February 2000

Drain-source Volt age (VGS= 0 ) 600 V

DS

Drain- gate Voltage ( RGS=20kΩ)

DGR

Gate-s ource Voltage ± 30 V

GS

Drain Current (c ont in uous ) at Tc=25oC3A

I

D

I

Drain Current (c ont in uous ) at Tc= 100oC 1.9 A

D

600 V

(•) Drain Current (p ulsed) 12 A

Tot al D issipation at Tc=25oC80W

tot

Derating Factor 0.64 W/

1) Peak Diode Rec overy voltage slope 4 V/ns

St orage T e m perature -65 to 150

stg

Max. O per ating J u nc tion Temperature 150

T

j

,Tj≤T

(BR)DSS

JMAX

o

C

o

C

o

C

1/9

STB3NC60

THERMAL DATA

R

thj-cas e

R

thj-amb

R

thc-sin k

T

AVALANCHE CHARACTERISTICS

Symb ol Parameter Max Value Uni t

I

AR

E

Therma l Resist ance Junct i on- case Max 1.56
Therma l Resist ance Junct i on- ambient Max

Therma l Resist ance Case-sink Typ
Maxim um Lead Tem pe ra t ure For Soldering P urpose

l

Avalanc h e Current , Repe t it ive or N ot-Repetitive
(pulse w idth limited b y T

Single P ulse A v alanche Energy

AS

(starting T

=25oC, ID=IAR,VDD=50V)

j

max)

j

62.5

0.5

300

3A

100 mJ

o

C/W

o

C/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS (T

=25oC unlessotherwisespecified)

case

OFF

Symb ol Parameter Test C o n ditions Mi n . Typ . Max. Unit

V

(BR) DSS

Drain-s ource

= 250 µAVGS=0

I

D

600 V

Break down Volt age

I

DSS

I

GSS

Zero Gate Voltage
Drain Cur rent (V

GS

Gate-body Leaka ge
Current (V

DS

=0)

=0)

V

=MaxRating

DS

= Max Rating Tc= 125oC

V

DS

= ± 30 V

V

GS

1

50

± 100 nA

ON (∗)

Symb ol Parameter Test C o n ditions Mi n . Typ . Max. Unit

V

GS(th)

R

DS(on)

Gate Th re sho ld Volt age
Static D rain-sourc e O n

V

DS=VGSID

=250µA

VGS= 10V ID= 1.5 A 3.3 3.6 Ω

234V

Resistance

I

D(on)

On State Drain Current VDS>I

D(on)xRDS(on)max

3A

VGS=10V

DYNAMIC

Symb ol Parameter Test C o n ditions Mi n . Typ . Max. Unit

g

(∗)Forward

fs

Transconduct ance

C

C

C

Input Capac itance

iss

Output Capacitance

oss

Reverse Transfer

rss

Capacit ance

VDS>I

D(on)xRDS(on)maxID

=1.5A 2 S

VDS=25V f=1MHz VGS= 0 400

57

7

µA
µA

pF
pF
pF

2/9

STB3NC60

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symb ol Parameter Test C o n ditions Mi n . Typ . Max. Unit

t

d(on)

t

r

Turn-on Time
Rise Time

VDD=300V ID=1.5A

=4.7 Ω VGS=10V

R

G

(see test circuit, figure 3)

Q
Q
Q

Total Gate Charge

g

Gate-Sourc e Char ge

gs

Gate-Drain Char g e

gd

VDD=480V ID=3A VGS=10V 13

SWITCHING OFF

Symb ol Parameter Test C o n ditions Mi n . Typ . Max. Unit

t

r(Voff)

t

Off -volt age Ris e Time
Fall Time

t

f

Cross -over Time

c

VDD=480V ID=3A

=4.7 Ω VGS=10V

R

G

(see test circuit, figure 5)

SOURCEDRAINDIODE

Symb ol Parameter Test C o n ditions Mi n . Typ . Max. Unit

I

SD

I

SDM

V

SD

t

Q

I

RRM

(∗) Pulsed: Pulse duration = 300µs, dutycycle 1.5 %
(•) Pulse width limited by safe operatingarea

Source-drain Current

(•)

Source-drain Current
(pulsed)

(∗)ForwardOnVoltage ISD=3A VGS=0 1.6 V

Revers e R ec overy

rr

Time
Revers e R ec overy

rr

= 3 A di/dt = 100 A/µs

I

SD

=100V Tj= 150oC

V

DD

(see test circuit, figure 5)
Charge
Revers e R ec overy
Current

9

13

18.2 nC

2.3

4.4

13
15
21

3

12

420

1.5

7.1

ns
ns

nC
nC

ns
ns
ns

A
A

ns

µC

A

Safe Operating Area for D2PAK/I2PAK ThermalImpedanceforD2PAK/I2PAK

3/9

STB3NC60

OutputCharacteristics

Transconductance

TransferCharacteristics

StaticDrain-source On Resistance

Gate Chargevs Gate-sourceVoltage

4/9

CapacitanceVariations

STB3NC60

NormalizedGate Threshold Voltage vs
Temperature

Source-drainDiode ForwardCharacteristics

Normalized On Resistance vs Temperature

5/9

STB3NC60

Fig. 1: UnclampedInductive Load Test Circuit

Fig. 3: Switching Times Test Circuits For

ResistiveLoad

Fig. 2: UnclampedInductiveWaveform

Fig. 4: GateChargetest Circuit

Fig. 5: TestCircuitFor InductiveLoad Switching

And DiodeRecovery Times

6/9

TO-262 (I2PAK) MECHANICAL DATA

STB3NC60

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.3 4.6 0.169 0.1 81

A1 2.49 2.69 0.098 0.106

B 0.7 0.93 0.027 0.036
B1 1.2 1.38 0.047 0.054
B2 1.25 1.4 0.049 0.055

C 0.45 0.6 0.017 0.023
C2 1.21 1.36 0.047 0.053

D 8.95 9.35 0.352 0.368

e 2.44 2.64 0.096 0.104

E 10 10.28 0.393 0.404

L 13.2 13.5 0. 519 0.5 31
L1 3.48 3.78 0.137 0.149
L2 1.27 1.4 0.050 0.055

mm inch

CA1

A

C2

B2

B

e

E

L1

L2

D

L

P011P5/C

7/9

STB3NC60

TO-263 (D2PAK) MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4 .3 4.6 0.169 0.181

A1 2.49 2.69 0.098 0.106

B 0.7 0.93 0.027 0.036

B2 1.25 1.4 0.049 0.055

C 0.45 0.6 0.017 0.023

C2 1.21 1.36 0.047 0.053

D 8.95 9.35 0.352 0.368

E 10 10.28 0.393 0.404

G 4.88 5.28 0.192 0.208

L 15 15.85 0.590 0.624

L2 1.27 1.4 0.050 0.055

L3 1.4 1.75 0.055 0.068

mm inch

E

A

C2

L2

D

L

L3

B2

B

A1

C

G

P011P6/C

8/9

STB3NC60

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subject to change without notice.This publication supersedesand replaces allinformation previously supplied.STMicroelectronicsproducts
are not authorized foruse as critical components in life support devicesor systems without expresswritten approval of STMicroelectronics.

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