Page 1
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
TYPE V
DSS
STB3N A 60-1 600 V < 4 Ω 2.9 A
R
DS(on)
I
D
STB3NA60-1
PRELIMINARY DATA
■ TYPICALR
■ AVALANCHERUGGEDTECHNOLOGY
■ ±
30V GATETO SOURCE VOLTAGERATING
■ 100% AVALANCHETESTED
■ REPETITIVEAVALANCHEDATAAT 100
■ LOW INTRINSIC CAPACITANCES
■ GATECHARGE MINIMIZED
DS(on)
=0.7 Ω
o
C
APPLICATIONS
■ HIGH CURRENT, HIGH SPEEDSWITCHING
■ SWITCHMODE POWER SUPPLIES (SMPS)
■ DC-DC& DC-AC CONVERTERS
■ MOTORCONTROL,AUDIO AMPLIFIERS
■ AUTOMOTIVEENVIRONMENT (INJECTION,
ABS, AIR-BAG,LAMPDRIVERS,Etc.)
3
2
1
I2PAK
TO-262
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Parame t er Val u e Uni t
V
V
DGR
V
I
DM
P
T
(•) Pulse width limited by safe operating area
March 1996
Drain-source Voltage (VGS= 0) 600 V
DS
Drain- gate Voltage (RGS=20kΩ) 600 V
Gate-source Voltage ± 30 V
GS
I
Drain Current (c ont inuo us) a t Tc=25oC2.9A
D
I
Drain Current (c ont inuo us) a t Tc=100oC1.8A
D
(•) Drain Current (puls ed) 11.6 A
Total Dissipat i on at Tc=25oC80W
tot
Derat ing Factor 0.64 W/
Stora ge Temperature -65 to 150
stg
T
Max. Operat ing Junct i on Temperatu re 150
j
o
C
o
C
o
C
1/9
Page 2
STB3NA60-1
THERMAL DATA
R
thj-case
R
thj-amb
R
thj-amb
T
AVALANCHE CHARACTERISTICS
Symb o l Para met er Max V alue Uni t
I
AR
E
E
I
AR
Ther mal Resistance Junct ion-case Max
Ther mal Resistance Junct ion-ambient Max
Ther mal Resistance Case-s i nk Typ
Maximum Lead Tempera t ure For Solder ing Purpo se
l
Avalanche Current , Repet it iv e or Not-Repe t it ive
(pulse width limi t ed by T
Single Pu lse Avalanc he E nerg y
AS
(starti ng T
Repetitive Avalanche Energy
AR
=25oC, ID=IAR,VDD=50V)
j
(pulse width limi t ed by T
max, δ <1%)
j
max, δ <1%)
j
Avalanche Current , Repet it iv e or Not-Repe t it ive
=100oC, p ulse wid t h limited by Tjmax, δ <1%)
(T
c
1.56
62.5
0.5
300
2.9 A
42 mJ
1.6 mJ
1.8 A
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
OFF
Symbol Parameter Test Condition s Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID= 250 µAV
= 0 600 V
GS
Break dow n Voltage
I
I
DSS
GSS
Zero Gate Voltage
Drain Current (V
GS
Gat e- bod y Leaka ge
Current (V
DS
=0)
=0)
=MaxRating
V
DS
V
=MaxRatingx0.8 Tc= 125oC
DS
V
= ± 30 V ±100 nA
GS
250
1000µAµA
ON (∗)
Symbol Parameter Test Condition s Min. Typ. Max. Unit
V
GS(th )
R
DS(on)
I
D(on)
Gat e Thre shold Volt age VDS=VGSID=250µA2.2533.75V
St at ic Drain-source On
Resistance
VGS=10V ID=1.5A
=10V ID=1.5A TC= 100oC
V
GS
On State Drain Current VDS>I
D(on)xRDS(on)maxVGS
=10 V 2.9 A
3.3 4
8
DYNAMIC
Symbol Parameter Test Condition s Min. Typ. Max. Unit
g
(∗)Forward
fs
Tr ansc on ductance
C
C
C
Input Capac it an ce
iss
Out put Capac itance
oss
Reverse Transfer
rss
Capacit a nc e
VDS>I
D(on)xRDS(on)maxID
=1.5A 1 2 S
VDS=25V f=1MHz VGS= 0 380
57
17
500
75
23
Ω
pF
pF
pF
2/9
Page 3
STB3NA60-1
ELECTRICAL CHARACTERISTICS (continued)
SWITCHINGON
Symbol Parameter Test Condition s Min. Typ. Max. Unit
t
d(on)
t
r
Turn-on Time
Rise Time
VDD=300V ID=1.5A
=18 Ω VGS=10V
R
G
(see test cir cuit, figure 3)
(di/dt)
Tur n-on C urr ent Slope VDD=400V ID=3A
on
R
=18 Ω VGS=10V
G
(see test cir cuit, figure 5)
Q
Q
Q
Tot al Gat e Charge
g
Gate-Source Charge
gs
Gat e- Drain Charge
gd
ID=3A VGS=10V
= M ax Rating x 0.8
V
DD
SWITCHINGOFF
Symbol Parameter Test Condition s Min. Typ. Max. Unit
t
r(Voff)
t
Off -voltage Rise Time
t
Fall T ime
f
Cross-over Time
c
VDD=480V ID=3A
=18Ω VGS=10V
R
G
(see test cir cuit, figure 5)
SOURCE DRAIN DIODE
14
25
20
35
300 A/ µs
22
30 nC
6
9
13
24
12
18
34
17
ns
ns
nC
nC
ns
ns
ns
Symbol Parameter Test Condition s Min. Typ. Max. Unit
I
I
SDM
SD
Source-drain Current
(•)
Source-drain Current
2.9
11.6
(pulsed)
(∗)ForwardOnVoltage ISD=2.9A VGS=0 1.5 V
V
SD
t
Q
Reverse Recovery
rr
Time
Reverse Recovery
rr
ISD= 3 A di/dt = 100 A/µs
=100V Tj=150oC
V
DD
(see test cir cuit, figure 5)
460
5.6
Charge
I
RRM
Reverse Recovery
24
Current
(∗) Pulsed: Pulse duration =300 µs,duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area ThermalImpedance
A
A
ns
µC
A
3/9
Page 4
STB3NA60-1
Derating Curve
TransferCharacteristics
OutputCharacteristics
Transconductance
StaticDrain-source On Resistance
4/9
Gate Charge vs Gate-source Voltage
Page 5
STB3NA60-1
CapacitanceVariations
Normalized OnResistance vs Temperature
Normalized GateThreshold Voltage vs
Temperature
Turn-onCurrent Slope
Turn-offDrain-source VoltageSlope
Cross-overTime
5/9
Page 6
STB3NA60-1
SwitchingSafe Operating Area
Source-drainDiode Forward Characteristics
AccidentalOverload Area
Fig. 1: UnclampedInductive Load Test Circuit Fig.2: UnclampedInductive Waveform
6/9
Page 7
STB3NA60-1
Fig. 3: SwitchingTimes Test Circuits For
ResistiveLoad
Fig. 5: Test CircuitFor Inductive Load Switching
And DIodeRecovery Times
Fig. 4: GateCharge test Circuit
7/9
Page 8
STB3NA60-1
TO-262(I2PAK) MECHANICALDATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.3 4.6 0.169 0.181
A1 2.49 2.69 0.098 0.106
B 0.7 0.93 0.027 0.036
B1 1.2 1.38 0.047 0.054
B2 1.25 1.4 0.049 0.055
C 0.45 0.6 0.017 0.023
C2 1.21 1.36 0.047 0.053
D 9 9.35 0.354 0.368
e 2.44 2.64 0.096 0.104
E 10 10.28 0.393 0.404
L 13.2 13.5 0.519 0.531
L1 3.48 3.78 0.137 0.149
L2 1.27 1.37 0.050 0.054
mm inch
8/9
C
A
A1
C2
B2
B
e
E
L1
L2
D
L
Page 9
STB3NA60-1
Information furnished is believedto be accurateand reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequencesof use ofsuch informationnor for any infringement of patents or otherrights of third parties which may resultsfrom its use. No
licenseis grantedby implicationor otherwise underany patentor patentrights ofSGS-THOMSONMicroelectronics. Specificationsmentioned
in this publicationare subject to change without notice.This publication supersedes andreplacesall information previously supplied.
SGS-THOMSONMicroelectronics productsarenotauthorizedfor useascriticalcomponents inlife supportdevices or systems withoutexpress
writtenapproval of SGS-THOMSONMicroelectonics.
1995 SGS-THOMSONMicroelectronics - All Rights Reserved
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