Page 1
STB3NA60-1
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
PRELIMINARY DATA
■ TYPICALR
DS(on)
=0.7 Ω
■ AVALANCHERUGGEDTECHNOLOGY
■ ±
30V GATETO SOURCE VOLTAGERATING
■ 100% AVALANCHETESTED
■ REPETITIVEAVALANCHEDATAAT 100
o
C
■ LOW INTRINSIC CAPACITANCES
■ GATECHARGE MINIMIZED
APPLICATIONS
■ HIGH CURRENT, HIGH SPEEDSWITCHING
■ SWITCHMODE POWER SUPPLIES (SMPS)
■ DC-DC& DC-AC CONVERTERS
■ MOTORCONTROL,AUDIO AMPLIFIERS
■ AUTOMOTIVEENVIRONMENT (INJECTION,
ABS, AIR-BAG,LAMPDRIVERS,Etc.)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Parame t er Val u e Uni t
V
DS
Drain-source Voltage (VGS= 0) 600 V
V
DGR
Drain- gate Voltage (RGS=20kΩ) 600 V
V
GS
Gate-source Voltage ± 30 V
I
D
Drain Current (c ont inuo us) a t Tc=25oC2.9A
I
D
Drain Current (c ont inuo us) a t Tc=100oC1.8A
I
DM
(•) Drain Current (puls ed) 11.6 A
P
tot
Total Dissipat i on at Tc=25oC80W
Derat ing Factor 0.64 W/
o
C
T
stg
Stora ge Temperature -65 to 150
o
C
T
j
Max. Operat ing Junct i on Temperatu re 150
o
C
(•) Pulse width limited by safe operating area
TYPE V
DSS
R
DS(on)
I
D
STB3N A 60-1 600 V < 4 Ω 2.9 A
March 1996
1
2
3
I2PAK
TO-262
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THERMAL DATA
R
thj-case
R
thj-amb
R
thj-amb
T
l
Ther mal Resistance Junct ion-case Max
Ther mal Resistance Junct ion-ambient Max
Ther mal Resistance Case-s i nk Typ
Maximum Lead Tempera t ure For Solder ing Purpo se
1.56
62.5
0.5
300
o
C/W
o
C/W
o
C/W
o
C
AVALANCHE CHARACTERISTICS
Symb o l Para met er Max V alue Uni t
I
AR
Avalanche Current , Repet it iv e or Not-Repe t it ive
(pulse width limi t ed by T
j
max, δ <1%)
2.9 A
E
AS
Single Pu lse Avalanc he E nerg y
(starti ng T
j
=25oC, ID=IAR,VDD=50V)
42 mJ
E
AR
Repetitive Avalanche Energy
(pulse width limi t ed by T
j
max, δ <1%)
1.6 mJ
I
AR
Avalanche Current , Repet it iv e or Not-Repe t it ive
(T
c
=100oC, p ulse wid t h limited by Tjmax, δ <1%)
1.8 A
ELECTRICAL CHARACTERISTICS (T
case
=25oC unlessotherwise specified)
OFF
Symbol Parameter Test Condition s Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
Break dow n Voltage
ID= 250 µAV
GS
= 0 600 V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
=0)
V
DS
=MaxRating
V
DS
=MaxRatingx0.8 Tc= 125oC
250
1000µAµA
I
GSS
Gat e- bod y Leaka ge
Current (V
DS
=0)
V
GS
= ± 30 V ±100 nA
ON (∗)
Symbol Parameter Test Condition s Min. Typ. Max. Unit
V
GS(th )
Gat e Thre shold Volt age VDS=VGSID=250µA2.2533.75V
R
DS(on)
St at ic Drain-source On
Resistance
VGS=10V ID=1.5A
V
GS
=10V ID=1.5A TC= 100oC
3.3 4
8
Ω
I
D(on)
On State Drain Current VDS>I
D(on)xRDS(on)maxVGS
=10 V 2.9 A
DYNAMIC
Symbol Parameter Test Condition s Min. Typ. Max. Unit
g
fs
(∗)Forward
Tr ansc on ductance
VDS>I
D(on)xRDS(on)maxID
=1.5A 1 2 S
C
iss
C
oss
C
rss
Input Capac it an ce
Out put Capac itance
Reverse Transfer
Capacit a nc e
VDS=25V f=1MHz VGS= 0 380
57
17
500
75
23
pF
pF
pF
STB3NA60-1
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ELECTRICAL CHARACTERISTICS (continued)
SWITCHINGON
Symbol Parameter Test Condition s Min. Typ. Max. Unit
t
d(on)
t
r
Turn-on Time
Rise Time
VDD=300V ID=1.5A
R
G
=18 Ω VGS=10V
(see test cir cuit, figure 3)
14
25
20
35
ns
ns
(di/dt)
on
Tur n-on C urr ent Slope VDD=400V ID=3A
R
G
=18 Ω VGS=10V
(see test cir cuit, figure 5)
300 A/ µs
Q
g
Q
gs
Q
gd
Tot al Gat e Charge
Gate-Source Charge
Gat e- Drain Charge
ID=3A VGS=10V
V
DD
= M ax Rating x 0.8
22
6
9
30 nC
nC
nC
SWITCHINGOFF
Symbol Parameter Test Condition s Min. Typ. Max. Unit
t
r(Voff)
t
f
t
c
Off -voltage Rise Time
Fall T ime
Cross-over Time
VDD=480V ID=3A
R
G
=18Ω VGS=10V
(see test cir cuit, figure 5)
13
24
12
18
34
17
ns
ns
ns
SOURCE DRAIN DIODE
Symbol Parameter Test Condition s Min. Typ. Max. Unit
I
SD
I
SDM
(•)
Source-drain Current
Source-drain Current
(pulsed)
2.9
11.6
A
A
V
SD
(∗)ForwardOnVoltage ISD=2.9A VGS=0 1.5 V
t
rr
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD= 3 A di/dt = 100 A/µs
V
DD
=100V Tj=150oC
(see test cir cuit, figure 5)
460
5.6
24
ns
µC
A
(∗) Pulsed: Pulse duration =300 µs,duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area ThermalImpedance
STB3NA60-1
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Derating Curve
TransferCharacteristics
StaticDrain-source On Resistance
OutputCharacteristics
Transconductance
Gate Charge vs Gate-source Voltage
STB3NA60-1
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CapacitanceVariations
Normalized OnResistance vs Temperature
Turn-offDrain-source VoltageSlope
Normalized GateThreshold Voltage vs
Temperature
Turn-onCurrent Slope
Cross-overTime
STB3NA60-1
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SwitchingSafe Operating Area
Source-drainDiode Forward Characteristics
AccidentalOverload Area
Fig. 1: UnclampedInductive Load Test Circuit Fig.2: UnclampedInductive Waveform
STB3NA60-1
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Fig. 3: SwitchingTimes Test Circuits For
ResistiveLoad
Fig. 5: Test CircuitFor Inductive Load Switching
And DIodeRecovery Times
Fig. 4: GateCharge test Circuit
STB3NA60-1
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DIM.
mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.3 4.6 0.169 0.181
A1 2.49 2.69 0.098 0.106
B 0.7 0.93 0.027 0.036
B1 1.2 1.38 0.047 0.054
B2 1.25 1.4 0.049 0.055
C 0.45 0.6 0.017 0.023
C2 1.21 1.36 0.047 0.053
D 9 9.35 0.354 0.368
e 2.44 2.64 0.096 0.104
E 10 10.28 0.393 0.404
L 13.2 13.5 0.519 0.531
L1 3.48 3.78 0.137 0.149
L2 1.27 1.37 0.050 0.054
L
L1
B2
B
D
E
A
C2
C
A1
L2
e
TO-262(I2PAK) MECHANICALDATA
STB3NA60-1
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Information furnished is believedto be accurateand reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequencesof use ofsuch informationnor for any infringement of patents or otherrights of third parties which may resultsfrom its use. No
licenseis grantedby implicationor otherwise underany patentor patentrights ofSGS-THOMSONMicroelectronics. Specificationsmentioned
in this publicationare subject to change without notice.This publication supersedes andreplacesall information previously supplied.
SGS-THOMSONMicroelectronics productsarenotauthorizedfor useascriticalcomponents inlife supportdevices or systems withoutexpress
writtenapproval of SGS-THOMSONMicroelectonics.
1995 SGS-THOMSONMicroelectronics - All Rights Reserved
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STB3NA60-1
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