Datasheet STB30NS15 Datasheet (SGS Thomson Microelectronics)

STB30NS15

N-CH A NNEL 150V - 0.075 Ω - 30A D2PAK

LOW GATE CHARGE STripFET™ POWER MOSFET

TYPE

V

DSS

STB30NS15 150 V <0.1

■ TYPICAL R

■ EXCEPTIONA L dv/d t CAPABILITY

■ 100% AVALANCHE TESTED

■ APPLICATION ORIENTED

(on) = 0.075 Ω

DS

R

DS(on)

I

D

Ω

30 A

CHARACTERIZATION

■ FOR THROUGH-HOLE VERSION CONTACT

SALES OFFICE

DESCRIPTION

This MOSFET series realized with STMicroelectronics
unique STripFET process has specifically been designed
to minimize input capacitance and gate charge. It is
therefore suitable as primary switch in advanced high­efficiency, high-frequency isolate d DC-DC c onverters for
Telecom and Computer a pplications. It is also intended
for any applications with low gate drive requirements.

APPLICATIONS

■ HIGH-EFFICIENCY DC-DC CONVERTERS

■ UPS AND MOTOR CONTROL

3

1

D2PAK

TO-263

(Suffix “T4”)

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

DS

V

DGR

V

GS

I

D

I

D

(

I

DM

P

tot

dv/dt

E

AS

T

stg

T

j

•) Pulse width limited by safe operating area. (1) I

Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)

150 V
150 V

Gate- source Voltage ± 20 V

Drain Current (continuos) at TC = 25°C
Drain Current (continuos) at TC = 100°C

•)

Drain Current (pulsed) 120 A
Total Dissipation at TC = 25°C

30 A
21 A

110 W

Derating Factor 0.73 W/°C

(1)

Peak Diode Recovery voltage slope 2 V/ns

(2)

Single Pulse Avalanche Energy 250 mJ
Storage Temperature
Max. Operating Junction Temperature

≤ 30A, di/dt ≤ 100A/µs, VDD ≤ V

SD

(2) Starting Tj = 25 oC, ID = 15A, VDD = 25V

-55 to 175 °C

(BR)DSS

, Tj ≤ T

JMAX.

1/9October 2001

STB30NS15

THERMA L D ATA

Rthj-case

Rthj-amb

T

l

Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose

Max
Max

1.36

62.5
300

°C/W
°C/W

°C

ELECTRICAL CHARACTERISTICS (T

= 25 °C unless otherwise specified)

case

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

= 250 µA, VGS = 0

V

(BR)DSS

Drain-source

I

D

150 V

Breakdown Voltage

= Max Rating

V

DS

= Max Rating TC = 125°C

V

DS

= ± 20V

V

GS

1

10

±100 nA

ON

(*)

I

DSS

I

GSS

Zero Gate Voltage
Drain Current (V

GS

Gate-body Leakage
Current (V

DS

= 0)

= 0)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

Gate Threshold Voltage
Static Drain-source On

= V

DS

GS

= 10 V ID = 15 A

V

GS

ID = 250 µA

234V

0.075 0.1

V

Resistance

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(*)

g

fs

C

iss

C

oss

C

rss

Forward Transconductance
Input Capacitance

Output Capacitance
Reverse Transfer
Capacitance

V

= 20 V ID = 15 A

DS

= 25V f = 1 MHz VGS = 0

V

DS

8S

990
175

110

µA
µA

Ω

pF
pF
pF

2/9

STB30NS15

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

t

r

Q

g

Q

gs

Q

gd

(*)

Turn-on Time
Rise Time

Total Gate Charge
Gate-Source Charge
Gate-Drain Charge

= 75 V ID =15 A

V

DD

= 4.7

R

Ω

G

VGS = 10 V

(Resistive Load, Figure 3)

=120V ID=30A VGS=10V

V

DD

12
28

64

8

27

ns
ns

nC
nC
nC

SWITCHING OFF

(*)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

= 75 V ID = 15 A

t

d(off)

t

Turn-off Delay Time

f

Fall Time

V

DD

= 4.7Ω, V

R

G

GS

= 10 V

50
12

(Resistive Load, Figure 3)

t

r(Voff)

t

f

t

c

Off-voltage Rise Time
Fall Time
Cross-over Time

SOURCE DRAIN DIODE

(*)

V

= 120 V ID = 30 A

clamp

= 4.7Ω, V

R

G

GS

(Inductive Load, Figure 5)

= 10 V

50
17
11

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

rr

Q

rr

I

RRM

(*)

Pulsed: P ul se duration = 300 µs, duty cycle 1.5 %.

(

•)Pulse width limited by T

Safe Operating Area

Source-drain Current

(•)

Source-drain Current (pulsed)

(*)

Forward On Voltage
Reverse Recovery Time

Reverse Recovery Charge
Reverse Recovery Current

jmax

I

= 30 A VGS = 0

SD

= 30 A di/dt = 100A/µs

I

SD

= 50 V Tj = 150°C

V

DD

(see test circuit, Figure 5)

Thermal Impedance

30

120

1.3 V

190

1.25
13

ns
ns

ns
ns
ns

ns

µ

A
A

C

A

3/9

STB30NS15

Output Characteristics Transfer Characteristics

Transconductance Static Drain-source On Resistance

Gate Charge vs Gate-source Voltage Capacitance Variations

4/9

STB30NS15

Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature

Source-drain Diode Forward Characteristics Normalized Breakdown Voltage vs Temperature.

. .
.

.

5/9

STB30NS15

Fig. 1: Unclamped Inductive Load Test CircuitFig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform

Fig. 3: Switching Times Test Circuits For Resistive

Load

Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times

Fig. 4: Gate Charge test Circuit

6/9

D2PAK MECHANICAL DATA

STB30NS15

DIM.

A 4.4 4.6 0.173 0.181
A1 2.49 2.69 0.098
A2 0.03 0.23 0.001 0.009

B 0.7 0.93 0.028 0.037
B2 1.14 1.7 0.045 0.067

C 0.45 0.6 0.018 0.024
C2 1.21 1.36 0.048 0.054

D 8.95 9.35 0.352 0.368
D1 8 0.315

E 10 10.4 0.394 0.409

E1 8.5 0.334

G 4.88 5.28 0.192 0.208

L 15 15.85 0.591 0.624
L2 1.27 1.4 0.050 0.055
L3 1.4 1.75 0.055 0.069

M 2.4 3.2 0.094 0.126
R 0.4 0.016

V2 0° 8° 0° 8°

MIN. TYP. MAX. MIN. TYP. TYP.

mm. inch.

0.106

7/9

STB30NS15

D2PAK FOOTPRINT

TAPE AND REEL SHIPMENT (suffix ”T4”)*

TUBE SHIPMENT (no suffix)*

REEL MECHANICAL DATA

DIM.

A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0.795
G 24.4 26.4 0.960 1.039
N 100 3.937

T 30.4 1.197

mm inch

MIN. MAX. MIN. MAX.

TAPE MECHANICAL DATA

DIM.

A0 10.5 10.7 0.413 0.421
B0 15.7 15.9 0.618 0.626

D 1.5 1.6 0.059 0.063

D1 1.59 1.61 0.062 0.063

E 1.65 1.85 0.065 0.073

F 11.4 11.6 0.449 0.456
K0 4.8 5.0 0.189 0.197
P0 3.9 4.1 0.153 0.161
P1 11.9 12.1 0.468 0.476
P2 1.9 2.1 0075 0.082

R50 1.574

T0.25 0.35 .0.0098 0.0137

W 23.7 24.3 0.933 0.956

mm inch

MIN. MAX. MIN. MAX.

* on sales type

8/9

BASE QTY BULK QTY

1000 1000

STB30NS15

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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implic ation or otherwise under any patent or patent rights of STMi croelectr onics. Sp ecifications mentioned in thi s publicati on are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as cri tical comp onents in life support dev i ces or systems wi thout exp ress written approval of STM i croelect ronics.

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