Page 1
STB30NS15
N-CH A NNEL 150V - 0.075 Ω - 30A D2PAK
LOW GATE CHARGE STripFET™ POWER MOSFET
TYPE
V
DSS
STB30NS15 150 V <0.1
■ TYPICAL R
■ EXCEPTIONA L dv/d t CAPABILITY
■ 100% AVALANCHE TESTED
■ APPLICATION ORIENTED
(on) = 0.075 Ω
DS
R
DS(on)
I
D
Ω
30 A
CHARACTERIZATION
■ FOR THROUGH-HOLE VERSION CONTACT
SALES OFFICE
DESCRIPTION
This MOSFET series realized with STMicroelectronics
unique STripFET process has specifically been designed
to minimize input capacitance and gate charge. It is
therefore suitable as primary switch in advanced highefficiency, high-frequency isolate d DC-DC c onverters for
Telecom and Computer a pplications. It is also intended
for any applications with low gate drive requirements.
APPLICATIONS
■ HIGH-EFFICIENCY DC-DC CONVERTERS
■ UPS AND MOTOR CONTROL
3
1
D2PAK
TO-263
(Suffix “T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
I
D
I
D
(
I
DM
P
tot
dv/dt
E
AS
T
stg
T
j
•) Pulse width limited by safe operating area. (1) I
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
150 V
150 V
Gate- source Voltage ± 20 V
Drain Current (continuos) at TC = 25°C
Drain Current (continuos) at TC = 100°C
•)
Drain Current (pulsed) 120 A
Total Dissipation at TC = 25°C
30 A
21 A
110 W
Derating Factor 0.73 W/°C
(1)
Peak Diode Recovery voltage slope 2 V/ns
(2)
Single Pulse Avalanche Energy 250 mJ
Storage Temperature
Max. Operating Junction Temperature
≤ 30A, di/dt ≤ 100A/µs, VDD ≤ V
SD
(2) Starting Tj = 25 oC, ID = 15A, VDD = 25V
-55 to 175 °C
(BR)DSS
, Tj ≤ T
JMAX.
1/9October 2001
Page 2
STB30NS15
THERMA L D ATA
Rthj-case
Rthj-amb
T
l
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
Max
Max
1.36
62.5
300
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS (T
= 25 °C unless otherwise specified)
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
= 250 µA, VGS = 0
V
(BR)DSS
Drain-source
I
D
150 V
Breakdown Voltage
= Max Rating
V
DS
= Max Rating TC = 125°C
V
DS
= ± 20V
V
GS
1
10
±100 nA
ON
(*)
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-source On
= V
DS
GS
= 10 V ID = 15 A
V
GS
ID = 250 µA
234V
0.075 0.1
V
Resistance
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(*)
g
fs
C
iss
C
oss
C
rss
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
= 20 V ID = 15 A
DS
= 25V f = 1 MHz VGS = 0
V
DS
8S
990
175
110
µA
µA
Ω
pF
pF
pF
2/9
Page 3
STB30NS15
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
t
r
Q
g
Q
gs
Q
gd
(*)
Turn-on Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
= 75 V ID =15 A
V
DD
= 4.7
R
Ω
G
VGS = 10 V
(Resistive Load, Figure 3)
=120V ID=30A VGS=10V
V
DD
12
28
64
8
27
ns
ns
nC
nC
nC
SWITCHING OFF
(*)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
= 75 V ID = 15 A
t
d(off)
t
Turn-off Delay Time
f
Fall Time
V
DD
= 4.7Ω, V
R
G
GS
= 10 V
50
12
(Resistive Load, Figure 3)
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
SOURCE DRAIN DIODE
(*)
V
= 120 V ID = 30 A
clamp
= 4.7Ω, V
R
G
GS
(Inductive Load, Figure 5)
= 10 V
50
17
11
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
rr
Q
rr
I
RRM
(*)
Pulsed: P ul se duration = 300 µs, duty cycle 1.5 %.
(
•)Pulse width limited by T
Safe Operating Area
Source-drain Current
(•)
Source-drain Current (pulsed)
(*)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
jmax
I
= 30 A VGS = 0
SD
= 30 A di/dt = 100A/µs
I
SD
= 50 V Tj = 150°C
V
DD
(see test circuit, Figure 5)
Thermal Impedance
30
120
1.3 V
190
1.25
13
ns
ns
ns
ns
ns
ns
µ
A
A
C
A
3/9
Page 4
STB30NS15
Output Characteristics Transfer Characteristics
Transconductance Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage Capacitance Variations
4/9
Page 5
STB30NS15
Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics Normalized Breakdown Voltage vs Temperature.
. .
.
.
5/9
Page 6
STB30NS15
Fig. 1: Unclamped Inductive Load Test CircuitFig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For Resistive
Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
Fig. 4: Gate Charge test Circuit
6/9
Page 7
D2PAK MECHANICAL DATA
STB30NS15
DIM.
A 4.4 4.6 0.173 0.181
A1 2.49 2.69 0.098
A2 0.03 0.23 0.001 0.009
B 0.7 0.93 0.028 0.037
B2 1.14 1.7 0.045 0.067
C 0.45 0.6 0.018 0.024
C2 1.21 1.36 0.048 0.054
D 8.95 9.35 0.352 0.368
D1 8 0.315
E 10 10.4 0.394 0.409
E1 8.5 0.334
G 4.88 5.28 0.192 0.208
L 15 15.85 0.591 0.624
L2 1.27 1.4 0.050 0.055
L3 1.4 1.75 0.055 0.069
M 2.4 3.2 0.094 0.126
R 0.4 0.016
V2 0° 8° 0° 8°
MIN. TYP. MAX. MIN. TYP. TYP.
mm. inch.
0.106
7/9
Page 8
STB30NS15
D2PAK FOOTPRINT
TAPE AND REEL SHIPMENT (suffix ”T4”)*
TUBE SHIPMENT (no suffix)*
REEL MECHANICAL DATA
DIM.
A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0.795
G 24.4 26.4 0.960 1.039
N 100 3.937
T 30.4 1.197
mm inch
MIN. MAX. MIN. MAX.
TAPE MECHANICAL DATA
DIM.
A0 10.5 10.7 0.413 0.421
B0 15.7 15.9 0.618 0.626
D 1.5 1.6 0.059 0.063
D1 1.59 1.61 0.062 0.063
E 1.65 1.85 0.065 0.073
F 11.4 11.6 0.449 0.456
K0 4.8 5.0 0.189 0.197
P0 3.9 4.1 0.153 0.161
P1 11.9 12.1 0.468 0.476
P2 1.9 2.1 0075 0.082
R50 1.574
T0.25 0.35 .0.0098 0.0137
W 23.7 24.3 0.933 0.956
mm inch
MIN. MAX. MIN. MAX.
* on sales type
8/9
BASE QTY BULK QTY
1000 1000
Page 9
STB30NS15
Information furnished is believed to be accurate an d rel i able. Howev er, STMicroel ectronics assumes no resp onsibility for the consequence s
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implic ation or otherwise under any patent or patent rights of STMi croelectr onics. Sp ecifications mentioned in thi s publicati on are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as cri tical comp onents in life support dev i ces or systems wi thout exp ress written approval of STM i croelect ronics.
The ST log o i s registered trademark of STMicroelectronics
2001 STMi croelectr onics - All Rights Rese rved
All other names are the property of their respective owners.
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9/9
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