Datasheet STP30NF10, STP30NF10FP, STB30NF10 Datasheet (SGS Thomson Microelectronics)

STB30NF10

STP30NF10 STP30NF10FP

N-CHANNEL 100V - 0.038 Ω - 35A TO-220/TO-220FP/D2PAK

LOW GATE CHARGE STripFET™ II POWER MOSFET

TYPE

STB30NF10
STP30NF10
STP30NF10FP

■ TYPICAL R

■ EXCEPTIONA L dv/d t CAPABILITY

■ 100% AVALANCHE TESTED

■ APPLICATION ORIENTED

V

DSS

100 V
100 V
100 V

(on) = 0.038 Ω

DS

R

DS(on)

<0.045
<0.045
<0.045

I

D

35 A

Ω

35 A

Ω

18 A

Ω

CHARACTERIZATION

■ SURFACE-MOUNTING D

2

PAK (TO-263)

POWER PACKAG E IN TU BE (NO SU FFIX) OR

IN TAPE & REEL (SUFFIX “T4”)

DESCRIPTION

This Power MOSFET is the latest dev elo pment of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on­resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark­able manufacturing reproducibility.

APPLICATIONS

■ HIGH-EFFICIENCY DC-DC CONVERTERS

■ UPS AND MOTOR CONTROL

3

2

1

TO-220FP

3

2

1

TO-220

INTERNAL SCHEMATIC DIAGRAM

1

D2PAK

TO-263

(Suffix “T4”)

3

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

STB30NF10
STP30NF10

Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
Gate- source Voltage ± 20 V

Drain Current (continuous) at TC = 25°C
Drain Current (continuous) at TC = 100°C

•)

Drain Current (pulsed) 140 72 A
Total Dissipation at TC = 25°C

35 18 A
25 13 A

115 30 W

V

I

V

V

DM

P

DS

DGR

GS

I

D

I

D

(

tot

Derating Factor 0.77 0.2 W/°C

(1)

dv/dt

E

AS

V

ISO

T

stg

T

j

(

Pulse width l i mited by safe operating area . (1) ISD ≤30A, di/dt ≤400A/ µ s , VDD ≤ V

•)

.

Peak Diode Recovery voltage slope 28 V/ns

(2)

Single Pulse Avalanche Energy 275 mJ
Insulation Withstand Voltage (DC) ------ 2000 V
Storage Temperature
Operating Junction Temperature

(2) Starting Tj = 25 oC, ID = 15A, VDD= 30V

-55 to 175 °C

STP30NF10FP

100 V
100 V

, Tj ≤ T

(BR)DSS

JMAX

1/11May 2002

STB30NF10 STP30NF10 STP30NF10FP

THERMA L D ATA

D2PAK

TO-220

Rthj-case Thermal Resistance Junction-case Max 1.30 5 °C/W

TO-220FP

Rthj-amb

T

ELECTRICAL CHARACTERISTICS (T

Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose

l

= 25 °C unless otherwise specified)

case

Max 62.5

300

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

= 250 µA, VGS = 0

D

V

= Max Rating

DS

V

= Max Rating TC = 125°C

DS

V

= ± 20 V

GS

100 V

1

10

±100 nA

ON

V

(BR)DSS

I

DSS

I

GSS

(*)

Drain-source
Breakdown Voltage

Zero Gate Voltage
Drain Current (V

GS

Gate-body Leakage
Current (V

DS

= 0)

= 0)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

Gate Threshold Voltage
Static Drain-source On

= VGS I

DS

V

= 10 V ID = 15 A

GS

= 250 µA

D

234V

0.038 0.045

V

Resistance

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(*)

g

fs

C

iss

C

oss

C

rss

Forward Transconductance
Input Capacitance

Output Capacitance
Reverse Transfer
Capacitance

V

= 15 V ID= 15 A

DS

= 25V, f = 1 MHz, VGS = 0

V

DS

10 S

1180

180

80

°C/W

°C

µA
µA

Ω

pF
pF
pF

2/11

STB30NF10 STP30NF10 STP30NF10FP

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

= 50 V ID = 15 A

t

d(on)

Turn-on Delay Time

t

r

Rise Time

V

DD

R

= 4.7 Ω VGS = 10 V

G

(Resistive Load, Figure 3)

Q

g

Q

gs

Q

gd

Total Gate Charge
Gate-Source Charge
Gate-Drain Charge

= 80 V ID= 30 A VGS= 10V

V

DD

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

= 50 V ID = 15 A

t

d(off)

Turn-off Delay Time

t

f

Fall Time

V

DD

R

= 4.7Ω, V

G

GS

= 10 V

(Resistive Load, Figure 3)

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

rr

Q

rr

I

RRM

(*)

Pulsed: P ul se duration = 300 µs, duty cycle 1. 5 %.

(

•)Pulse width limited by saf e operating ar ea.

Source-drain Current

(•)

Source-drain Current (pulsed)

(*)

Forward On Voltage
Reverse Recovery Time

Reverse Recovery Charge
Reverse Recovery Current

I

= 30 A VGS = 0

SD

= 30 A di/dt = 100A/µs

I

SD

V

= 55 V Tj = 150°C

DD

(see test circuit, Figure 5)

15
40

40

8.0
15

45
10

110
390

7.5

55 nC

35

140

1.3 V

ns
ns

nC
nC

ns
ns

A
A

ns

nC

A

Safe Operating Area for TO-220FPSafe Operating Area for TO-220

3/11

STB30NF10 STP30NF10 STP30NF10FP

Thermal Impedance Thermal Impedance for TO-220FP

Output Characteristics Transfer Characteristics

Transconductance Static Drain-source On Resistance

4/11

STB30NF10 STP30NF10 STP30NF10FP

Gate Charge vs Gate-source Voltage Capacitance Variations

Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature

Source-drain Diode Forward Characteristics Normalized Breakdown Voltage Temperature

5/11

STB30NF10 STP30NF10 STP30NF10FP

Fig. 1: Unclamped Inductive Load Test CircuitFig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform

Fig. 3: Switching Times Test Circuits For Resistive

Load

Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times

Fig. 4: Gate Charge test Circuit

6/11

STB30NF10 STP30NF10 STP30NF10FP

D2PAK MECHANICAL DAT A

DIM.

A 4.4 4.6 0.173 0.181
A1 2.49 2.69 0.098
A2 0.03 0.23 0.001 0.009

B 0.7 0.93 0.028 0.037
B2 1.14 1.7 0.045 0.067

C 0.45 0.6 0.018 0.024
C2 1.21 1.36 0.048 0.054

D 8.95 9.35 0.352 0.368
D1 8 0.315

E 10 10.4 0.394 0.409
E1 8.5 0.334

G 4.88 5.28 0.192 0.208

L 15 15.85 0.591 0.624
L2 1.27 1.4 0.050 0.055
L3 1.4 1.75 0.055 0.069

M 2.4 3.2 0.094 0.126

R 0.4 0.016

V2 0° 8° 0° 8°

MIN. TYP. MAX. MIN. TYP. TYP.

mm. inch.

0.106

7/11

STB30NF10 STP30NF10 STP30NF10FP

E

TO-220 MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107

D1 1.27 0.050

E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067

G 4.95 5.15 0.194 0.203

G1 2.4 2.7 0.094 0.106

H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154

DIA. 3.75 3.85 0.147 0.151

mm inch

A

C

D

D1

L2

F1

L5

Dia.

G1

F

F2

L9

G

H2

L7

L6

L4

P011C

8/11

STB30NF10 STP30NF10 STP30NF10FP

TO-220FP MECHANICAL DAT A

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181

B 2.5 2.7 0.098 0.106

D 2.5 2.75 0.098 0.108

E 0.45 0.7 0.017 0.027

F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067

G 4.95 5.2 0.195 0.204

G1 2.4 2.7 0.094 0.106

H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366

Ø 3 3.2 0.118 0.126

mm inch

A

B

H

E

D

L3

L6

L7

¯

F1

F

G1

G

F2

123

L2

L4

9/11

STB30NF10 STP30NF10 STP30NF10FP

D2PAK FOOTPRINT

TAPE AND REEL SHIPMENT (suffix ”T4”)*

TUBE SHIPMENT (no suffix)*

REEL MECHANICAL DATA

DIM.

A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0.795
G 24.4 26.4 0.960 1.039
N 100 3.937

T 30.4 1.197

mm inch

MIN. MAX. MIN. MAX.

TAPE MECHANICAL DATA

DIM.

A0 10.5 10.7 0.413 0.421
B0 15.7 15.9 0.618 0.626

D 1.5 1.6 0.059 0.063

D1 1.59 1.61 0.062 0.063

E 1.65 1.85 0.065 0.073

F 11.4 11.6 0.449 0.456
K0 4.8 5.0 0.189 0.197
P0 3.9 4.1 0.153 0.161
P1 11.9 12.1 0.468 0.476
P2 1.9 2.1 0075 0.082

R50 1.574

T0.25 0.35 .0.0098 0.0137

W 23.7 24.3 0.933 0.956

mm inch

MIN. MAX. MIN. MAX.

* on sales type

10/11

BASE QTY BULK QTY

1000 1000

STB30NF10 STP30NF10 STP30NF10FP

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implic ation or otherwise unde r any patent or patent rights of STMicroelectroni cs. Specifications me ntioned in th i s publication are subj ect
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics produ ct s are not
authorized for use as crit i cal component s in l i fe support dev i ces or systems without express written approval of STMic roelectronics.

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2002 STMi croelectroni cs - All Rights Reserved

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11/11