Datasheet STP22NM50FP, STP22NM50, STB22NM50-1, STB22NM50 Datasheet (SGS Thomson Microelectronics)

STP22NM50 - STP22NM50FP

STB22NM50 - STB22NM50-1

N-CHANNEL 500V - 0.16Ω - 20A TO-220/FP/D2PAK/I2PAK

MDmesh™Power M OSF ET

ADVANCED DATA

TYPE V

STP22NM50
STP22NM50FP
STB22NM50
STB22NM50-1

■ TYPICAL R

■ HIGH dv/dt AND AVALANCHE CAPABILITIES

■ 100% AVALANCHE TESTED

■ LOW INPUTCAPACITANCE AND GA TE CHARGE

■ LOW GATE INPUT RESISTANCE

DSS

500 V
500 V
500 V
500 V

(on) = 0.16Ω

DS

R

DS(on)Rds(on)*Qg

<0.215Ω
<0.215Ω
<0.215Ω
<0.215Ω

6.4 Ω*nC

6.4 Ω*nC

6.4 Ω*nC

6.4 Ω*nC

I

D

20 A
20 A
20 A
20 A

DESCRIPTION

The M Dmesh™ is a new revolutionary MOSFET tech­nology that associates the M ultiple Drain process with
the Company’s PowerMESH™ horizontal layout. The
resulting product has an outstanding low on-res is­tance, impressively high dv/dt and excellent av alanche
characteristics. The adoption of the Company’s propri­etary s trip technique yields overall dynamic perfor­mance that is significantly better than that of similar
competition’s products.

APPLICATIONS

The MDmesh™ f amily is very suitable for increasi ng
power dens ity of high voltage converters allowing sys­tem miniaturization and higher efficiencies.

3

1

D2PAK

TO-220

2

1

I²PAK

(Tabless TO-220)

I

NTERNAL SCHEMATIC DIAGRAM

3

1

TO-220FP

3

2

ABSOLUTE M AX IMUM RATINGS

Symbol Parameter Value Unit

STP(B)22NM50(-1) STP22NM50FP

V

DS

V

DGR

V

GS

I

D

I

D

IDM(●)

P

TOT

dv/dt(1) Peak Diode Recovery voltage slope 15 V/ns

V

ISO

T

stg

T

j

(•)Pulse width limited by safe operating area

January 2003

Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)

500 V

500 V
Gate- source Voltage ±30 V
Drain Current (continuous) at TC= 25°C
Drain Current (continuous) at TC= 100°C

20 20(*) A

12.6 12.6(*) A
Drain Current (pulsed) 80 80(*) A
Total Dissipation at TC= 25°C

192 45 W

Derating Factor 1.2 0.36 W/°C

Insulation Winthstand Voltage (DC) -- 2000 V
Storage Temperature –65 to 150 °C
Max. Operating Junction Temperature 150 °C

(1)ISD≤20A, di/dt ≤400A/µs, VDD≤ V
(*)Limited only by maximum temperature allowed

(BR)DSS,Tj≤TJMAX.

1/10

STP22NM50 / STP22NM50FP / S TB22NM 50 / STB22NM50-1

THERMAL DATA

TO-220/I2PAK/

2

PAK

D

Rthj-case Thermal Resistance Junction-case Max 0.65 2.8 °C/W

Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W

T

l

Maximum Lead Temperature For Soldering Purpose 300 °C

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Unit

I

AR

E

AS

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T

max)

j

Single Pulse Avalanche Energy
(starting T

= 25 °C, ID= 5 A, VDD=50V)

j

TO-220FP

10 A

650 mJ

ELECTRICAL CHARACT E RISTICS (T

= 25 °C UNLESS OTHERWISE SPECIFIED)

CASE

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

Drain-source

ID= 250 µA, VGS= 0 500 V

Breakdown Voltage

I

DSS

I

GSS

Zero Gate Voltage
Drain Current (V

GS

Gate-body Leakage
Current (V

DS

=0)

=0)

V

= Max Rating

DS

VDS= Max Rating, TC= 125 °C
V

= ±30V ±100 nA

GS

10 µA

1µA

ON (1)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

Gate Threshold Voltage
Static Drain-source On

V

DS=VGS,ID

VGS=10V,ID= 10A 0.16 0.215 Ω

= 250µA

345V

Resistance

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(1) Forward Transconductance VDS>I

g

fs

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance 285 pF
Reverse Transfer

Capacitance

C

(2) Equivalent Output

oss eq.

Capacitance

R

g

1. Pulsed: Pulse duration= 300 µs, duty cycle 1.5%.

2. C

Gate Input Resistance f=1 MHz Gate DC Bias=0

is defined as a constant equivalent capacitance giving the same charging time as C

oss eq.

V

.

DSS

D(on)xRDS(on)max,

ID= 10A

V

=25V,f=1MHz,VGS=0

DS

VGS=0V,VDS= 0V to 400V 130 pF

Test Signal Level=20mV
Open Drain

oss

10 S

1480 pF

34 pF

1.6 Ω

when VDSincreases from 0 to 80%

2/10

STP22NM50 / STP22NM50FP / S TB22NM 50 / STB22NM50-1

ELECTRICAL CHARACT E RISTICS (CONTINUED)

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

t

d(on)

Q
Q
Q

t

r

g

gs

gd

Turn-on Delay Time
Rise Time 16 ns
Total Gate Charge

Gate-Source Charge 13 nC
Gate-Drain Charge 19 nC

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

r(Voff)

t

f

t

c

Off-voltage Rise Time
Fall Time 8.5 ns
Cross-over Time 23 ns

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

VSD(1)

t

rr

Q

rr

I

RRM

t

rr

Q

rr

I

RRM

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

Source-drain Current 20 A

(2)

Source-drain Current (pulsed) 80 A
Forward On Voltage
Reverse Recovery Time

Reverse Recovery Charge
Reverse Recovery Current

Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current

=250V,ID=10A

DD

= 4.7Ω VGS=10V

R

G

(see test circuit, Figure 3)
V

=400V,ID=20A,

DD

V

=10V

GS

V

= 400 V, ID=20A,

DD

=4.7Ω, VGS=10V

R

G

(see test circuit, Figure 5)

ISD=20A,VGS=0

= 20 A, di/dt = 100A/µs,

I

SD

V

=100V,Tj=25°C

DD

(see test circuit, Figure 5)

= 20 A, di/dt = 100A/µs,

I

SD

VDD=100V,Tj=150°C
(see test circuit, Figure 5)

24 ns

40 56 nC

9ns

1.5 V

350

4.6
26

435

5.9
27

ns

µC

A

ns

µC

A

3/10

STP22NM50 / STP22NM50FP / S TB22NM 50 / STB22NM50-1

Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit

Fig. 3: Switching Times Test Circuits For

Resistive Load

Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times

Fig. 4: Gate Charge test Circuit

4/10

STP22NM50 / STP22NM50FP / S TB22NM 50 / STB22NM50-1

E

P011C

TO-220 MECHANICAL DATA

DIM.

A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107

D1 1.27 0.050

E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067

G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154

DIA. 3.75 3.85 0.147 0.151

MIN. TYP. MAX. MIN. TYP. MAX.

mm inch

A

C

D

L5

Dia.

L7

D1

L6

L2

L9

F1

G1

F

H2

G

F2

L4

5/10

STP22NM50 / STP22NM50FP / S TB22NM 50 / STB22NM50-1

D2PAK MECHANICAL DATA

DIM.

MIN. TYP MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181
A1 2.49 2.69 0.098 0.106
A2 0.03 0.23 0.001 0.009

B 0.7 0.93 0.027 0.036
B2 1.14 1.7 0.044 0.067

C 0.45 0.6 0.017 0.023
C2 1.23 1.36 0.048 0.053

D 8.95 9.35 0.352 0.368
D1 8 0.315

E 10 10.4 0.393
E1 8.5 0.334

G 4.88 5.28 0.192 0.208

L 15 15.85 0.590 0.625

L2 1.27 1.4 0.050 0.055
L3 1.4 1.75 0.055 0.068

mm. inch

M 2.4 3.2 0.094 0.126
R 0.4 0.015

V2 0º 8º

3

6/10

1

STP22NM50 / STP22NM50FP / S TB22NM 50 / STB22NM50-1

TO-220FP MECHANICAL DAT A

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027

F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067

G 4.95 5.2 0.195 0.204

G1 2.4 2.7 0.094 0.106

H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366

Ø 3 3.2 0.118 0.126

mm inch

E

A

D

B

L3

L6

L7

¯

F1

F

G1

H

G

F2

123

L2

L4

7/10

STP22NM50 / STP22NM50FP / S TB22NM 50 / STB22NM50-1

TO-262 (I2PAK) MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181

A1 2.49 2.69 0.098 0.106

B 0.7 0.93 0.027 0.036

B2 1.14 1.7 0.044 0.067

C 0.45 0.6 0.017 0.023

C2 1.23 1.36 0.048 0.053

D 8.95 9.35 0.352 0.368

e 2.4 2.7 0.094 0.106

E 10 10.4 0.393 0.409

L 13.1 13.6 0.515 0.531
L1 3.48 3.78 0.137 0.149
L2 1.27 1.4 0.050 0.055

mm inch

C

8/10

A

A1

C2

B2

B

e

E

L1

L2

D

L

P011P5/E

STP22NM50 / STP22NM50FP / S TB22NM 50 / STB22NM50-1

D2PAK FOOTPRINT

TAPE AND REEL SHIPMENT (suffix ”T4”)*

TUBE SHIPMENT (no suffix)*

REEL MECHANICAL DATA

DIM.

A 330 12.992
B 1.5 0.059
C 12. 8 13.2 0.504 0.520
D 20. 2 0795

G 24.4 26.4 0.960 1.039

N 100 3.937
T 30.4 1.197

mm inch

MIN. MAX. MIN. MAX.

TAPE MECHANICAL DATA

DIM.

A0 10. 5 10.7 0.413 0.421
B0 15.7 15.9 0.618 0.626

D 1.5 1.6 0.059 0.063

D1 1.59 1.61 0.062 0.063

E 1.65 1.85 0.065 0.073

F 11.4 11.6 0.449 0.456
K0 4.8 5.0 0.189 0.197
P0 3.9 4.1 0.153 0.161
P1 11.9 12.1 0.468 0.476
P2 1.9 2.1 0.075 0.082

R 50 1.574

T 0.25 0.35 0.0098 0.0137

W 23.7 24. 3 0.933 0.956

* on sales type

mm inch

MIN. MAX. MIN. MAX.

BASE QTY BULK QTY

1000 1000

9/10

STP22NM50 / STP22NM50FP / S TB22NM 50 / STB22NM50-1

10/10

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