Datasheet STP210NF02, STB210NF02, STB210NF02-1 Datasheet (SGS Thomson Microelectronics)

STP210NF02

STB210NF02 STB210NF02-1

N-CHANNEL 20V - 0.0026 Ω - 120A D²PAK/I²PAK/TO-220

STripFET™ II POWER MOSFET

AUTOMOTIVE SPECIFIC

TYPE

STB210NF02/-1
STP210NF02

■ TYPICAL R

■ STANDARD THRESHOLD DRIVE

■ 100% AVALANCHE TESTED

V

DSS

20 V
20 V

(on) = 0.0026Ω

DS

R

DS(on)

<0.0032
<0.0032

Ω
Ω

I

D

120 A(**)
120 A(**)

DESCRIPTION

This Power MOSFET is the latest development of

STMicroelectron is unique "Single Feature Size™" str ip­based process . The res ulting tran sistor sho ws extrem ely
high packing density for low on-resistance, rugged
avalanche characteristics and less critical alignment
steps therefore a remarkable manufacturing
reproducibility.

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ SOLENOID AND RELAY DRIVERS

■ MOTOR CONTROL, AUDIO AMPLIFIERS

■ DC-DC & DC-AC CONVERTERS

3

1

²

D

PAK

TO-263

3

2

1

TO-220

INTERNAL SCHEMATIC DIAGRAM

²

PAK

I

TO-262

3

2

1

Ordering Information

STB210NF02 B210NF02

SALES TYPE MARKING PACKAGE PACKAGING

STB210NF02T4 B210NF02
STP210NF02 P210NF02 TO-220 TUBE
STB210NF02-1 B210NF02

2

PAK

D

2

D

PAK

2

I

PAK

TUBE

T APE & REEL

TUBE

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

DS

V

DGR

V

GS

(**) Drain Current (continuous) at T

I

D

I

D

(

I

DM

P

tot

Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)

20 V
20 V

Gate- source Voltage ± 20 V

= 25°C

C

Drain Current (continuous) at TC = 100°C

•)

Drain Current (pulsed) 480 A
Total Dissipation at TC = 25°C

120 A
120 A

300 W

Derating Factor 2.0 W/°C

(1)

dv/dt

E

AS

T

stg

T

j

(

Pulse widt h l i m i ted by safe op erating area.

•)

(**) Curre nt Limited by Pac kage

Peak Diode Recovery voltage slope 1 V/ns

(2)

Single Pulse Avalanche Energy 2.3 J
Storage Temperature
Operating Junction Temperature

(1) ISD ≤120A, di/dt ≤250A/µs, VDD ≤ V

(2) Starting Tj = 25 oC, ID = 60 A, VDD = 14 V

-55 to 175 °C

(BR)DSS

, Tj ≤ T

October 2002

.

JMAX

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STB210NF02/-1 STP210NF02

THERMA L D ATA

Rthj-case

Rthj-amb

Rthj-pcb

T

Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Junction-pcb
Maximum Lead Temperature For Soldering Purpose

l

(for 10 sec. 1.6 mm from case)

Max
Max
Max

Typ

0.5

62.5

see curve on page 6

300

°C/W
°C/W
°C/W

°C

ELECTRICAL CHARACTERISTICS (T

= 25 °C unless otherwise specified)

case

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

V

(BR)DSS

Drain-source

= 250 µA VGS = 0

D

20 V

Breakdown Voltage

V

= Max Rating

DS

V

= Max Rating TC = 125°C

DS

V

= ± 20V

GS

1

10

±100 nA

ON

(*)

I

DSS

I

GSS

Zero Gate Voltage
Drain Current (V

GS

Gate-body Leakage
Current (V

DS

= 0)

= 0)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

Gate Threshold Voltage
Static Drain-source On

= VGS I

DS

V

= 10 V ID = 50 A

GS

= 250 µA

D

24V

2.6 3.2 m

V

Resistance

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(*)

g

fs

C

iss

C

oss

C

rss

Forward Transconductance
Input Capacitance

Output Capacitance
Reverse Transfer
Capacitance

V

10 V ID= 50 A

DS =

= 15V, f = 1 MHz, VGS = 0

V

DS

130 S

5100
3500

800

µA
µA

Ω

pF
pF
pF

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STB210NF02/-1 STP210NF02

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

= 10 V ID = 60 A

t

d(on)

Turn-on Delay Time

t

r

Rise Time

V

DD

R

= 4.7 Ω VGS = 10 V

G

(Resistive Load, Figure 3)

Q

g

Q

gs

Q

gd

Total Gate Charge
Gate-Source Charge
Gate-Drain Charge

=10V ID =120A VGS=10V

V

DD

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

= 10 V ID = 60 A

t

d(off)

Turn-off Delay Time

t

f

Fall Time

V

DD

R

= 4.7Ω, V

G

GS

= 10 V

(Resistive Load, Figure 3)

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

rr

Q

rr

I

RRM

(*)

Pulsed: P ul se duration = 300 µs, duty cycle 1.5 %.

(

•)Pulse width limited by s af e operatin g area.

Source-drain Current

(•)

Source-drain Current (pulsed)

(*)

Forward On Voltage
Reverse Recovery Time

Reverse Recovery Charge
Reverse Recovery Current

I

= 120 A VGS = 0

SD

= 120 A di/dt = 100A/µs

I

SD

V

= 15 V Tj = 150°C

DD

(see test circuit, Figure 5)

35

360

125

40
50

75

110

70

120

3.5

150 nC

120
480

1.3 V

ns
ns

nC
nC

ns
ns

A
A

ns

nC

A

Safe Operating Area Thermal Impedance

3/14

STB210NF02/-1 STP210NF02

Output Characteristics Transfer Characteristics

Transconductance Static Drain-source On Resistance

Gate Charge vs Gate-source Voltage Capacitance Variations

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STB210NF02/-1 STP210NF02

Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature

Source-drain Diode Forward Characteristics Normalized Breakdown Voltage vs Temperature.

. .

Power Derating vs Tc Max Id Current vs Tc

5/14

STB210NF02/-1 STP210NF02

Thermal Resistance Rthj-a vs PCB Copper Area Max Power Dissipation vs PCB Copper Area

Allowable Iav vs. Time in Avalanche

The previous curve gives the safe operating area for unclamped inductive loads, single pulse or repetitive,
under the following conditions:

P
E

= 0.5 * (1.3 * BV

D(AVE)

= P

AS(AR)

D(AVE)

* t

AV

DSS

* IAV)

Where:
I

is the Allowable Current in Avalanche

AV

P
t

AV

To derate above 25

is the Average Power Dissipation in Avalanche (Single Pulse)

D(AVE)

is the Time in Avalanche

o

C, at fixed IAV, the following equation must be applied:

= 2 * (T

I

AV

jmax

- T

CASE

)/ (1.3 * BV

DSS

* Zth)
Where:
Z

= K * Rth is the value coming from Normalized Thermal Response at fixed pulse width equal to TAV .

th

6/14

SPICE THERMAL MODEL

STB210NF02/-1 STP210NF02

Parameter

CTHERM1 5 - 4 0.011
CTHERM2 4 - 3 0.0012
CTHERM3 3 - 2 0.05
CTHERM4 2 - 1 0.1

RTHERM1 5 - 4 0.09
RTHERM2 4 - 3 0.02
RTHERM3 3 - 2 0.11
RTHERM4 2 - 1 0.17

Node Value

7/14

STB210NF02/-1 STP210NF02

Fig. 1: Unclamped Inductive Load Test CircuitFig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform

Fig. 3: Switching Times Test Circuits For Resistive

Load

Fig. 4: Gate Charge Test Circuit

Fig. 3.1: Switching Time Waveform

Fig. 4.1: Gate Charge Test Waveform

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STB210NF02/-1 STP210NF02

Fig. 5: Diode Switching Test Circuit Fig. 5.1: Diode Recovery Times Waveform

9/14

STB210NF02/-1 STP210NF02

D²PA K MECHANICAL DATA

DIM.

A 4.4 4.6 0.173 0.181
A1 2.49 2.69 0.098
A2 0.03 0.23 0.001 0.009

B 0.7 0.93 0.028 0.037
B2 1.14 1.7 0.045 0.067

C 0.45 0.6 0.018 0.024
C2 1.21 1.36 0.048 0.054

D 8.95 9.35 0.352 0.368
D1 8 0.315

E 10 10.4 0.394 0.409
E1 8.5 0.334

G 4.88 5.28 0.192 0.208

L 15 15.85 0.591 0.624
L2 1.27 1.4 0.050 0.055
L3 1.4 1.75 0.055 0.069

M 2.4 3.2 0.094 0.126

R 0.4 0.016

V2 0° 8° 0° 8°

MIN. TYP. MAX. MIN. TYP. TYP.

mm. inch.

0.106

10/14

STB210NF02/-1 STP210NF02

TO-262 (I2PAK) MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181

A1 2.49 2.69 0.098 0.106

B 0.7 0.93 0.027 0.036

B2 1.14 1.7 0.044 0.067

C 0.45 0.6 0.017 0.023

C2 1.23 1.36 0.048 0.053

D 8.95 9.35 0.352 0.368

e 2.4 2.7 0.094 0.106
E 10 10.4 0.393 0.409

L 13.1 13.6 0.515 0.531
L1 3.48 3.78 0.137 0.149
L2 1.27 1.4 0.050 0.055

mm inch

C

A

A1

C2

B2

B

e

E

L1

L2

D

L

P011P5/E

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STB210NF02/-1 STP210NF02

TO-220 MECHANICAL DATA

DIM.

A 4.4 4.6 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067

G 4.95 5.15 0.194 0.203
G1 2.40 2.70 0.094 0.106
H2 10 10.40 0.393 0.409
L2 16.40 0.645
L3 28.90 1.137
L4 13 14 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.20 6.60 0.244 0.260
L9 3.50 3.93 0.137 0.154

DIA 3.75 3.85 0.147 0.151

MIN. TYP. MAX. MIN. TYP. TYP.

mm. inch.

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STB210NF02/-1 STP210NF02

D2PAK FOOTPRINT

TAPE AND REEL SHIPMENT (suffix ”T4”)*

TUBE SHIPMENT (no suffix)*

REEL MECHANICAL DATA

DIM.

A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0.795

G 24.4 26.4 0.960 1.039

N 100 3.937
T 30.4 1.197

mm inch

MIN. MAX. MIN. MAX.

TAPE MECHANICAL DATA

DIM.

A0 10.5 10.7 0.413 0.421
B0 15.7 15.9 0.618 0.626

D 1.5 1.6 0.059 0.063

D1 1.59 1.61 0.062 0.063

E 1.65 1.85 0.065 0.073

F 11.4 11.6 0.449 0.456
K0 4.8 5.0 0.189 0.197
P0 3.9 4.1 0.153 0.161
P1 11.9 12.1 0.468 0.476
P2 1.9 2.1 0075 0.082

R50 1.574

T0.25 0.35 .0.0098 0.0137

W 23.7 24.3 0.933 0.956

mm inch

MIN. MAX. MIN. MAX.

* on sales type

BASE QTY BULK QTY

1000 1000

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STB210NF02/-1 STP210NF02

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