Datasheet STP20NM60FP, STP20NM60, STB20NM60T4, STB20NM60-1, STB20NM60 Datasheet (SGS Thomson Microelectronics)

STP20NM60 - STP20NM60FP

STB20NM60 STB20NM60-1

N-CHANNEL 600V - 0.25Ω - 20A TO-220/FP/D2PAK/I2PAK

MDmesh™Power MOSFET

TYPE V

STP20NM60
STP20NM60FP
STB20NM60
STB20NM60-1

■ TYPICAL R

■ HIGH dv/dt AND AVALANCHE CAPABILITIES

■ 100% AVALANCHE TESTED

■ LOW INPUT CAPACITANCE AND GATE CHARGE

■ LOW GATE INPUT RESISTANCE

DS

DSS

600 V
600 V
600 V
600 V

(on) = 0.25Ω

R

DS(on)

< 0.29 Ω
< 0.29 Ω
< 0.29 Ω
< 0.29 Ω

I

D

20 A
20 A
20 A
20 A

DESCRIPTION

The MDmesh™ is a new revolutionary MOSFET tech­nology that associates the Multiple Drain process with
the Company’s PowerMESH™ horizontal layout. The
resulting product has an outstanding low on-resis­tance, impressively high dv/dt and excellent avalanche
characteristics. The adoption of the Company’s propri­etary strip technique yields overall dynamic perfor­mance that is significantly better than that of similar
competition’s products.

APPLICATIONS

The MDmesh™ family is very suitable for increasing
power density of high voltage c onv erters allowing sys­tem miniaturization and higher efficiencies.

3

2

1

TO-220

3

2

2

I

1

PAK

I

NTERNAL SCHEMATIC DIAGRAM

TO-220 FP

1

2

D

PAK

3

2

1

3

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

STP(B)20NM60(-1) STP20NM60FP

V

DS

V

DGR

V

GS

I

D

I

D

IDM(●)

P

TOT

dv/dt(1) Peak Diode Recovery voltage slope 15 V/ns

V

ISO

T

stg

T

j

(•)Pulse width limited by safe operating area

Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)

600 V

600 V
Gate- source Voltage ±30 V
Drain Current (continuous) at TC= 25°C
Drain Current (continuous) at TC= 100°C

20 20(*) A

12.6 12.6(*) A
Drain Current (pulsed) 80 80(*) A
Total Dissipation at TC= 25°C

192 45 W

Derating Factor 1.2 0.36 W/°C

Insulation Winthstand Voltage (DC) -- 2500 V
Storage Temperature –65 to 150 °C
Max. Operating Junction Temperature 150 °C

(1)ISD≤20A, di/dt ≤400A/µs, VDD≤ V
(*)Limited onlybymaximum temperature allowed

(BR)DSS,Tj≤TJMAX.

1/12February 2003

STP20NM60 / STP20NM60FP / STB20NM60 / STB20NM 60-1

THERMAL DATA

TO-220/D2PAK/I2PAK

Rthj-case Thermal Resistance Junction-case Max 0.65 2.8 °C/W

Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W

T

l

Maximum Lead Temperature For Soldering Purpose 300 °C

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Unit

I

AR

E

AS

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T

max)

j

Single Pulse Avalanche Energy
(starting T

= 25 °C, ID=IAR,VDD=50V)

j

TO-220FP

10 A

650 mJ

ELECTRICAL CHARACTERISTICS (T

= 25 °C UNLESS OTHERWISE SPECIFIED)

CASE

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

Drain-source

ID= 250 µA, VGS= 0 600 V

Breakdown Voltage

I

DSS

I

GSS

Zero Gate Voltage
Drain Current (V

GS

Gate-body Leakage
Current (V

DS

=0)

=0)

V

= Max Rating

DS

= Max Rating, TC= 125 °C

V

DS

V

= ±30V ±100 nA

GS

1µA

10 µA

ON (1)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

Gate Threshold Voltage
Static Drain-source On

V

DS=VGS,ID

VGS=10V,ID= 10A 0.25 0.29 Ω

= 250µA

345V

Resistance

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(1) Forward Transconductance VDS>I

g

fs

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance 350 pF
Reverse Transfer

Capacitance

C

(2) Equivalent Output

oss eq.

Capacitance

R

g

1. Pulsed:Pulseduration = 300µs,duty cycle1.5 %.

2. C

Gate Input Resistance f=1 MHz Gate DC Bias=0

is defined as a constant equivalent capacitance giving the same charging time as C

oss eq.

V

.

DSS

D(on)xRDS(on)max,

ID= 10A

V

=25V,f=1MHz,VGS=0

DS

VGS=0V,VDS= 0V to 400V 130 pF

Test Signal Level=20mV
Open Drain

oss

11 S

1500 pF

35 pF

1.6 Ω

when VDSincreases from 0 to 80%

2/12

STP20NM60 / STP20NM60FP / STB20NM60 / STB20NM60-1

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

t

d(on)

Q
Q
Q

t

r

g
gs
gd

Turn-on Delay Time
Rise Time 20 ns
Total Gate Charge

Gate-Source Charge 10 nC
Gate-Drain Charge 20 nC

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

r(Voff)

t

f

t

c

Off-voltage Rise Time
Fall Time 11 ns
Cross-over Time 21 ns

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

rr

Q

rr

I

rrm

t

rr

Q

rr

I

rrm

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

Source-drain Current 20 A

(2)

Source-drain Current (pulsed) 80 A

(1)

Forward On Voltage
Reverse Recovery Time

Reverse Recovery Charge
Reverse Recovery Current

Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current

=200V,ID=10A

DD

RG= 4.7Ω VGS=10V
(see test circuit, Figure 3)

V

=400V,ID= 20A,

DD

V

=10V

GS

V

= 480V, ID=20A,

DD

RG=4.7Ω, VGS= 10V
(see test circuit, Figure 5)

ISD=20A,VGS=0

= 20 A, di/dt = 100A/µs,

I

SD

V

=100V,Tj=25°C

DD

(see test circuit, Figure 5)

= 20 A, di/dt = 100A/µs,

I

SD

=100V,Tj=150°C

V

DD

(see test circuit, Figure 5)

25 ns

39 54 nC

6ns

1.5 V

390

5

25

510

6.5
26

ns

µC

A

ns

µC

A

Safe Operating Area for TO-220F PSafe Operating Area for TO-220/D2PAK/I2PAK

3/12

STP20NM60 / STP20NM60FP / STB20NM60 / STB20NM 60-1

Thermal Impedance for TO-220/D2P AK/I2PAK Thermal Impedance for TO-220FP

Output Characteristics

Transconductance

Transfer Chara cteristics

Static Drain-Source On Resistance

4/12

STP20NM60 / STP20NM60FP / STB20NM60 / STB20NM60-1

Gate Charge vs Gate-so urce Voltage Capacitance Variations

Normalized On Resistance vs TemperatureNormalized Gate Theresho ld Voltage vs Temp.

Source-drain Diode Forward Ch aracteristics

5/12

STP20NM60 / STP20NM60FP / STB20NM60 / STB20NM 60-1

Fig. 2: Unclamped Inductive W av eformFig. 1: Unclamped Inductive Lo ad Test Circuit

Fig. 3: Switching Times Test Circuit For

Resistive Load

Fig. 5: Test Circuit For Inductive Load Switching
And Di ode Recovery Times

Fig. 4: Gate Charge test Circuit

6/12

STP20NM60 / STP20NM60FP / STB20NM60 / STB20NM60-1

E

P011C

TO-220 MECHANICAL DATA

DIM.

A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107

D1 1.27 0.050

E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067

G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154

DIA. 3.75 3.85 0.147 0.151

MIN. TYP. MAX. MIN. TYP. MAX.

mm inch

A

C

D

L5

Dia.

L7

D1

L6

L2

L9

F1

G1

F

H2

G

F2

L4

7/12

STP20NM60 / STP20NM60FP / STB20NM60 / STB20NM 60-1

TO-220FP MECHANICAL DAT A

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027

F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067

G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106

H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366

Ø 3 3.2 0.118 0.126

mm inch

E

A

D

8/12

B

L3

L6

L7

¯

F1

F

G1

H

G

F2

123

L2

L4

STP20NM60 / STP20NM60FP / STB20NM60 / STB20NM60-1

P011P5/E

TO-262 (I2PAK) MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181

A1 2.49 2.69 0.098 0.106

B 0.7 0.93 0.027 0.036

B2 1.14 1.7 0.044 0.067

C 0.45 0.6 0.017 0.023

C2 1.23 1.36 0.048 0.053

D 8.95 9.35 0.352 0.368

e 2.4 2.7 0.094 0.106

E 10 10.4 0.393 0.409

L 13.1 13.6 0.515 0.531

L1 3.48 3.78 0.137 0.149
L2 1.27 1.4 0.050 0.055

mm inch

C

A

A1

C2

B2

B

e

E

L1

L2

D

L

9/12

STP20NM60 / STP20NM60FP / STB20NM60 / STB20NM 60-1

D2PAK MECHANICAL DATA

DIM.

MIN. TYP MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181
A1 2.49 2.69 0.098 0.106
A2 0.03 0.23 0.001 0.009

B 0.7 0.93 0.027 0.036
B2 1.14 1.7 0.044 0.067

C 0.45 0.6 0.017 0.023

C2 1.23 1.36 0.048 0.053

D 8.95 9.35 0.352 0.368

D1 8 0.315

E 10 10.4 0.393
E1 8.5 0.334

G 4.88 5.28 0.192 0.208

L 15 15.85 0.590 0.625
L2 1.27 1.4 0.050 0.055
L3 1.4 1.75 0.055 0.068

mm. inch

M 2.4 3.2 0.094 0.126
R 0.4 0.015

V2 0º 8º

3

10/12

1

STP20NM60 / STP20NM60FP / STB20NM60 / STB20NM60-1

D2PAK FOOTPRINT

TAPE AND REEL SHIPMENT (suffix ”T4”)*

TUBE SHIPM ENT (no suffix)*

REEL MECHANICAL DATA

DIM.

A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520

D 20.2 0795
G 24.4 26.4 0.960 1.039
N 100 3.937

T 30.4 1.197

mm inch

MIN. MAX. MIN. MAX.

TAPE MECHANICAL DATA

DIM.

A0 10.5 10.7 0.413 0.421
B0 15.7 15.9 0. 618 0.626

D 1.5 1.6 0.059 0.063

D1 1.59 1.61 0.062 0.063

E 1.65 1.85 0.065 0.073

F 11.4 11.6 0.449 0.456
K0 4.8 5.0 0.189 0.197
P0 3.9 4.1 0. 153 0.161
P1 11.9 12.1 0.468 0.476
P2 1.9 2.1 0. 075 0.082

R 50 1.574

T 0.25 0.35 0.0098 0.0137

W 23.7 24.3 0.933 0.956

* on sales ty pe

mm inch

MIN. MAX. MIN. MAX.

BASE QTY BULK QTY

1000 1000

11/12

STP20NM60 / STP20NM60FP / STB20NM60 / STB20NM 60-1

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of u se of such inf ormat ion nor for any in fring ement of p aten ts or othe r ri ghts of th ird p arties whic h may resul t f rom
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mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
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systems without express written approval of STMicroelectronics.

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12/12