Datasheet STP20NM60, STP20NM60FP, STW20NM60, STB20NM60, STB20NM60-1 Datasheet (ST)

Page 1
查询STB20NM60供应商
STP20NM60-STP20NM60FP-STW20NM60
STB20NM60 - STB20NM60-1
N-CHANNEL 600V - 0.25Ω - 20A TO-220/FP/D²/I²PAK/TO-247
MDmesh™ MOSFET
Table 1: Ge neral Features
TYPE V
STP20NM60 STP20NM60FP STB20NM60 STB20NM60-1 STW20NM60
■ TYPICAL R
■ HIGH dv/dt AND AVALANCHE CAPABILITIES
■ 100% AVALANCHE TESTED
■ LOW INPUT CAPACITANCE AND GATE
DSS
600 V 600 V 600 V 600 V 600 V
DS
R
DS(on)
< 0.29 Ω < 0.29 Ω < 0.29 Ω < 0.29 Ω < 0.29 Ω
I
D
20 A 20 A 20 A 20 A 20 A
CHARGE
■ LOW GATE INPUT RESISTAN CE
DESCRIPTION
The MDmesh™
is a new revolutionary MOSF ET
technology that asso ciates the Mul tiple Drain pro­cess with the Company’s PowerMESH™ horizon­tal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Com pany’s proprietary strip tech­nique yields overall dynamic p erformance that is significantly better than that of similar competi­tion’s products.
Figure 1: Package
3
2
1
TO-220
D²PAK
3
1
TO-247
1
3
2
TO-220FP
I²PAK
Figure 2: Internal Schematic Diagram
3
2
1
3
2
1
APPLICATIONS
The MDmesh™ family is very suitable for increas­ing power density of high voltage converters allow­ing system miniaturization and higher efficiencies.
Table 2: Order Codes
SALES TYPE MARKING PACKAGE PACKAGING
STP20NM60 P20NM60 TO-220 TUBE STP20NM60FP P20NM60FP TO-220FP TUBE STB20NM60T4 B20NM60 D²PAK TAPE & REEL
STB20NM60-1 B20NM60 I²PAK TUBE
STW20NM60 W20NM60 TO-247 TUBE
Rev.2
1/15February 2005
Page 2
STP20NM60 - STP20NM60FP - STB20NM 60 - STW20NM60 - STB20NM60-1
Table 3: Absolute Maximum ratings
Symbol Parameter Value Unit
TO-220/D²PAK/
I²PAK/TO-247
V
I
V
V
DM
P
DGR
GS
I I
TOT
DS
D D
Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ)
600 V
600 V Gate- source Voltage ±30 V Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C
()
Drain Current (pulsed) 80 80 (*) A Total Dissipation at TC = 25°C
20 20 (*) A
12.6 12.6 (*) A
192 45 W
Derating Factor 1.2 0.36 W/°C
dv/dt (1) Peak Diode Recovery voltage slope 15 V/ns
V
ISO
T
stg
T
Insulation Winthstand Voltage (DC) -- 2500 V Storage Temperature -65 to 150 °C Max. Operating Junction Temperature 150 °C
j
() Pulse width limited by safe operating area
(1) I
≤ 20 A, di/dt ≤ 400 A/µs, V
SD
(*) Limited only by maximum temperature allowed
DD
≤ V
(BR)/DSS, Tj
≤ T
JMAX
TO-220FP
Table 4: Thermal Data
TO-220/D²PAK/
I²PAK/TO-247
Rthj-case Thermal Resistance Junction-case Max 0.65 2.8 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
T
Maximum Lead Temperature For Soldering Purpose 300 °C
l
TO-220FP
Table 5: Avalanche Characteristics
Symbol Parame ter Max. Value Unit
I
AR
E
AS
Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T
max)
j
Single Pulse Avalanche Energy (starting T
= 25 °C, ID = IAR, VDD = 50 V)
j
ELECTRICAL CHARACTERISTICS (T
=25°C UNLESS OTHERWISE SPECIFIED)
CASE
10 A
650 mJ
Table 6: On/Off
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Drain-source Breakdown Voltage
Zero Gate Voltage Drain Current (V
GS
= 0)
Gate-body Leakage Current (V
DS
= 0) Gate Threshold Voltage Static Drain-source On
Resistance
ID = 250 µA, VGS = 0 600 V
= Max Rating
V
DS
VDS= Max Rating, TC= 125°C V
= ± 30V ±100 µA
GS
V
= VGS, ID = 250 µA
DS
345V
1
10
VGS = 10V, ID = 10 A 0.25 0.29 Ω
Unit
µA µA
2/15
Page 3
STP20NM60 - STP20NM60FP - STB20NM60 - STW20NM60 - STB20NM60-1
ELECTRICAL CHARACTERISTICS (CONTINUED) Table 7: Dynamic
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS > I
g
fs
C
oss eq.
C
iss
C
oss
C
rss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
(3) Equivalent Outpu t
Capacitance
t
d(on)
t
d(off)
Q Q Q
R
t
r
t
f
t
c
g gs gd
g
Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Cross-over Time
Total Gate Charge Gate-Source Charge Gate-Drain Charge
Gate Input Resistance f = 1 MHz Gate DC Bias = 0
ID = 10 A V
DS
VGS = 0V, VDS = 0V to 400 V 215 pF
V
DD
RG = 4.7Ω VGS = 10 V (Resistive Load see, Figure 3) V
DD
(See test circuit, Figure 5) V
DD
V
GS
Test Signal Level = 20 mV Open Drain
D(on)
x R
DS(on)max,
11 S
= 25V, f = 1 MHz, VGS = 0 1500
350
35
= 200 V, ID = 10 A
25 20
6
= 480 V, ID = 20 A
11 21
= 400 V, ID = 20 A, = 10V
39 10 20
1.6 Ω
54
pF pF pF
ns ns ns ns ns
nC nC nC
Table 8: Source Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD (1)
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: P ul se duration = 300 µs, duty cyc l e 1. 5 %.
2. Pulse wi dt h l i m ited by safe opera ting area.
3. C
Source-drain Current
(2)
Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time
Reverse Recovery Charge Reverse Recovery Current
Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current
is defined as a constant equivalent capacitance giving the same charging time as C
oss eq.
V
.
DSS
ISD = 20 A, VGS = 0 I
SD
VDD = 100 V, Tj = 25°C (see test circuit, Figure 5)
I
SD
V
DD
(see test circuit, Figure 5)
=20 A, di/dt = 100 A/µs
=20 A, di/dt = 100 A/µs
= 100 V, Tj = 150°C
390
5
25
510
6.5 26
when VDS increases from 0 to 80%
oss
20 80
1.5 V
A A
ns
µC
A
ns
µC
A
3/15
Page 4
STP20NM60 - STP20NM60FP - STB20NM 60 - STW20NM60 - STB20NM60-1
Figure 3: Safe Operating Area for TO-220/ D²PAK/I²PAK
Figure 4: Safe Operating Area for TO-220FP
Figure 6: Thermal Impedance for TO-220/ D²PAK/I²PAK
Figure 7: Thermal Impedan ce for TO -2 20FP
Figure 5: Safe Operating Area for TO-247
4/15
Figure 8: Thermal Impedan ce for TO -2 47
Page 5
STP20NM60 - STP20NM60FP - STB20NM60 - STW20NM60 - STB20NM60-1
Figure 9: Output Characteristics
Figure 10: Transconductance
Figure 12: Gate Charge vs Gate-source Voltage
Figure 13: Normalized Gate Threshold Voltage vs Tem p.
Figure 11: Transfer Characteristics
Figure 14: Static Drain-source On Resistance
5/15
Page 6
STP20NM60 - STP20NM60FP - STB20NM 60 - STW20NM60 - STB20NM60-1
Figure 15: Capacitance Variations
Figure 16: Norm alized O n Resis tance vs T em­perature
Figure 17: Sour ce-drain Diode Forward Char­acteristics
6/15
Page 7
STP20NM60 - STP20NM60FP - STB20NM60 - STW20NM60 - STB20NM60-1
Figure 18: Unclamped Inductive Load Test Cir­cuit
Figure 19: Switching Times Test Circuit For Resistive Load
Figure 21: Unclamped Inductive Wafeform
Figure 22: Gate Charge Test Circuit
Figure 20: Test Circuit For Inductive Load Switching and Diode Recovery Times
7/15
Page 8
STP20NM60 - STP20NM60FP - STB20NM 60 - STW20NM60 - STB20NM60-1
TO-220 MECHANICAL DATA
DIM.
A 4.40 4.60 0.173 0.181
b 0.61 0.88 0.024 0.034
b1 1.15 1.70 0.045 0.066
c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409
e 2.40 2.70 0.094 0.106
e1 4.95 5.15 0.194 0.202
F 1.23 1.32 0.048 0.052
H1 6.20 6.60 0.244 0.256
J1 2.40 2.72 0.094 0.107
L 13 14 0.511 0.551
L1 3.50 3.93 0.137 0.154 L20 16.40 0.645 L30 28.90 1.137
øP 3.75 3.85 0.147 0.151
Q 2.65 2.95 0.104 0.116
MIN. TYP MAX. M IN. TYP. MAX.
mm. inch
8/15
Page 9
STP20NM60 - STP20NM60FP - STB20NM60 - STW20NM60 - STB20NM60-1
TO-220FP MECHANICAL DATA
DIM.
A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027
F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126
MIN. TYP MAX. MIN. TYP. MAX.
mm. inch
E
A
D
B
L3
L6
L7
1 F
F
1
H
G
G
L2
L5
2 F
123
L4
9/15
Page 10
STP20NM60 - STP20NM60FP - STB20NM 60 - STW20NM60 - STB20NM60-1
TO-263 (D2PAK) MECHANICAL DATA
DIM.
A 4.32 4.57 0.178 0.180
A1 0.00 0.25 0.00 0.009
b 0.71 0.91 0.028 0.350 b2 1.15 1.40 0.045 0.055
c 0.46 0.61 0.018 0.024 c2 1.22 1.40 0.048 0.055
D 8.89 9.02 9.40 0.350 0.355 0.370
D1 8.01 0.315
E 10.04 10.28 0.395 0.404
e 2.54 0.010
H 13.10 13.70 0.515 0.540
L 1.30 1.70 0.051 0.067 L1 1.15 1.39 0.045 0.054 L2 1.27 1.77 0.050 0.069 L4 2.70 3.10 0.106 0.122
V2 0° 8° 0°
MIN. TYP MAX. MIN. TYP. MAX.
mm. inch
8°
10/15
Page 11
STP20NM60 - STP20NM60FP - STB20NM60 - STW20NM60 - STB20NM60-1
TO-262 (I2PAK) MECHANICAL DATA
DIM.
A 4.40 4.60 0.173 0.181
A1 2.40 2.72 0.094 0.107
b 0.61 0.88 0.024 0.034 b1 1.14 1.70 0.044 0.066
c 0.49 0.70 0.019 0.027
c2 1.23 1.32 0.048 0.052
D 8.95 9.35 0.352 0.368
e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202
E 10 10.40 0.393 0.410
L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L2 1.27 1.40 0.050 0.055
MIN. TYP MAX. MIN. TYP. MAX.
mm. inch
11/15
Page 12
STP20NM60 - STP20NM60FP - STB20NM 60 - STW20NM60 - STB20NM60-1
D2PAK FOOTPRINT
TAPE AND REEL SHIPMENT (suffix ”T4”)*
TUBE SHIPMENT (no suffix)*
REEL MECHANICAL DATA
DIM.
A 330 12.992 B 1.5 0.059 C 12.8 13.2 0.504 0.520 D 20.2 0795 G 24.4 26.4 0.960 1.039 N 100 3.937 T 30.4 1.197
mm inch
MIN. MAX. MIN. MAX.
T APE MECHANICAL DATA
DIM.
A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626
D 1.5 1.6 0.059 0.063
D1 1.59 1.61 0.062 0.063
E 1.65 1.85 0.065 0.073
F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082
R 50 1.574
T 0.25 0.35 0.0098 0.0137
W 23.7 24.3 0.933 0.956
* on sales type
mm inch
MIN. MAX. MIN. MAX.
BASE QTY BULK QTY
1000 1000
12/15
Page 13
STP20NM60 - STP20NM60FP - STB20NM60 - STW20NM60 - STB20NM60-1
TO-247 MECHANICAL DATA
DIM.
A 4.85 5.15 0.19 0.20
A1 2.20 2.60 0.086 0.102
b 1.0 1.40 0.039 0.055 b1 2.0 2.40 0.079 0.094 b2 3.0 3.40 0.118 0.134
c 0.40 0.80 0.015 0.03
D 19.85 20.15 0.781 0.793 E 15.45 15.75 0.608 0.620
e5.45 0.214
L 14.20 14.80 0.560 0.582 L1 3.70 4.30 0.14 0.17 L2 18.50 0.728
øP 3.55 3.65 0.140 0.143 øR 4.50 5.50 0.177 0.216
S5.50 0.216
MIN. TYP MAX. MIN. TYP. MAX.
mm. inch
13/15
Page 14
STP20NM60 - STP20NM60FP - STB20NM 60 - STW20NM60 - STB20NM60-1
Table 9: Revision History
Date Revision Description of Change s
26-Jul-2004 1 First Release
17-Feb-2005 2 Insert the TO-247 package
14/15
Page 15
STP20NM60 - STP20NM60FP - STB20NM60 - STW20NM60 - STB20NM60-1
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is g ranted by implic ati o n or ot h er wis e und er an y pat ent or pa te nt r igh ts of STMi cr oe l ect ro ni cs . Sp ec if i cat i on s ment i o ned i n th is p ub li c ati on ar e s ubj ec t to change without notice. This publication supers edes and replaces all informa tion previously supplied. STMicroelec tronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
All other names are the property of their respective owners
© 2005 STMicroelectronics - All Rights Reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -
Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
15/15
Loading...