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查询STB20NM60供应商
STP20NM60-STP20NM60FP-STW20NM60
STB20NM60 - STB20NM60-1
N-CHANNEL 600V - 0.25Ω - 20A TO-220/FP/D²/I²PAK/TO-247
MDmesh™ MOSFET
Table 1: Ge neral Features
TYPE V
STP20NM60
STP20NM60FP
STB20NM60
STB20NM60-1
STW20NM60
■ TYPICAL R
■ HIGH dv/dt AND AVALANCHE CAPABILITIES
■ 100% AVALANCHE TESTED
■ LOW INPUT CAPACITANCE AND GATE
DSS
600 V
600 V
600 V
600 V
600 V
(on) = 0.25 Ω
DS
R
DS(on)
< 0.29 Ω
< 0.29 Ω
< 0.29 Ω
< 0.29 Ω
< 0.29 Ω
I
D
20 A
20 A
20 A
20 A
20 A
CHARGE
■ LOW GATE INPUT RESISTAN CE
DESCRIPTION
The MDmesh™
is a new revolutionary MOSF ET
technology that asso ciates the Mul tiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an
outstanding low on-resistance, impressively high
dv/dt and excellent avalanche characteristics. The
adoption of the Com pany’s proprietary strip technique yields overall dynamic p erformance that is
significantly better than that of similar competition’s products.
Figure 1: Package
3
2
1
TO-220
D²PAK
3
1
TO-247
1
3
2
TO-220FP
I²PAK
Figure 2: Internal Schematic Diagram
3
2
1
3
2
1
APPLICATIONS
The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.
Table 2: Order Codes
SALES TYPE MARKING PACKAGE PACKAGING
STP20NM60 P20NM60 TO-220 TUBE
STP20NM60FP P20NM60FP TO-220FP TUBE
STB20NM60T4 B20NM60 D² PAK TAPE & REEL
STB20NM60-1 B20NM60 I² PAK TUBE
STW20NM60 W20NM60 TO-247 TUBE
Rev.2
1/15 February 2005
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STP20NM60 - STP20NM60FP - STB20NM 60 - STW20NM60 - STB20NM60-1
Table 3: Absolute Maximum ratings
Symbol Parameter Value Unit
TO-220/D²PAK/
I²PAK/TO-247
V
I
V
V
DM
P
DGR
GS
I
I
TOT
DS
D
D
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
600 V
600 V
Gate- source Voltage ±30 V
Drain Current (continuous) at TC = 25°C
Drain Current (continuous) at TC = 100°C
( )
Drain Current (pulsed) 80 80 (*) A
Total Dissipation at TC = 25°C
20 20 (*) A
12.6 12.6 (*) A
192 45 W
Derating Factor 1.2 0.36 W/°C
dv/dt (1) Peak Diode Recovery voltage slope 15 V/ns
V
ISO
T
stg
T
Insulation Winthstand Voltage (DC) -- 2500 V
Storage Temperature -65 to 150 °C
Max. Operating Junction Temperature 150 °C
j
( ) Pulse width limited by safe operating area
(1) I
≤ 20 A, di/dt ≤ 400 A/µs, V
SD
(*) Limited only by maximum temperature allowed
DD
≤ V
(BR)/DSS, Tj
≤ T
JMAX
TO-220FP
Table 4: Thermal Data
TO-220/D²PAK/
I²PAK/TO-247
Rthj-case Thermal Resistance Junction-case Max 0.65 2.8 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
T
Maximum Lead Temperature For Soldering Purpose 300 °C
l
TO-220FP
Table 5: Avalanche Characteristics
Symbol Parame ter Max. Value Unit
I
AR
E
AS
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
max)
j
Single Pulse Avalanche Energy
(starting T
= 25 ° C, ID = IAR, VDD = 50 V)
j
ELECTRICAL CHARACTERISTICS (T
=25° C UNLESS OTHERWISE SPECIFIED)
CASE
10 A
650 mJ
Table 6: On/Off
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
Gate-body Leakage
Current (V
DS
= 0)
Gate Threshold Voltage
Static Drain-source On
Resistance
ID = 250 µA, VGS = 0 600 V
= Max Rating
V
DS
VDS= Max Rating, TC= 125°C
V
= ± 30V ±100 µA
GS
V
= VGS, ID = 250 µA
DS
345V
1
10
VGS = 10V, ID = 10 A 0.25 0.29 Ω
Unit
µA
µA
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STP20NM60 - STP20NM60FP - STB20NM60 - STW20NM60 - STB20NM60-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 7: Dynamic
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS > I
g
fs
C
oss eq.
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
(3) Equivalent Outpu t
Capacitance
t
d(on)
t
d(off)
Q
Q
Q
R
t
r
t
f
t
c
g
gs
gd
g
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Cross-over Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Input Resistance f = 1 MHz Gate DC Bias = 0
ID = 10 A
V
DS
VGS = 0V, VDS = 0V to 400 V 215 pF
V
DD
RG = 4.7Ω V GS = 10 V
(Resistive Load see, Figure 3)
V
DD
(See test circuit, Figure 5)
V
DD
V
GS
Test Signal Level = 20 mV
Open Drain
D(on)
x R
DS(on)max,
11 S
= 25V, f = 1 MHz, VGS = 0 1500
350
35
= 200 V, ID = 10 A
25
20
6
= 480 V, ID = 20 A
11
21
= 400 V, ID = 20 A,
= 10V
39
10
20
1.6 Ω
54
pF
pF
pF
ns
ns
ns
ns
ns
nC
nC
nC
Table 8: Source Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD (1)
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: P ul se duration = 300 µs, duty cyc l e 1. 5 %.
2. Pulse wi dt h l i m ited by safe opera ting area.
3. C
Source-drain Current
(2)
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
is defined as a constant equivalent capacitance giving the same charging time as C
oss eq.
V
.
DSS
ISD = 20 A, VGS = 0
I
SD
VDD = 100 V, Tj = 25°C
(see test circuit, Figure 5)
I
SD
V
DD
(see test circuit, Figure 5)
=20 A, di/dt = 100 A/µs
=20 A, di/dt = 100 A/µs
= 100 V, Tj = 150°C
390
5
25
510
6.5
26
when VDS increases from 0 to 80%
oss
20
80
1.5 V
A
A
ns
µC
A
ns
µC
A
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STP20NM60 - STP20NM60FP - STB20NM 60 - STW20NM60 - STB20NM60-1
Figure 3: Safe Operating Area for TO-220/
D²PAK/I²PAK
Figure 4: Safe Operating Area for TO-220FP
Figure 6: Thermal Impedance for TO-220/
D²PAK/I²PAK
Figure 7: Thermal Impedan ce for TO -2 20FP
Figure 5: Safe Operating Area for TO-247
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Figure 8: Thermal Impedan ce for TO -2 47
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STP20NM60 - STP20NM60FP - STB20NM60 - STW20NM60 - STB20NM60-1
Figure 9: Output Characteristics
Figure 10: Transconductance
Figure 12: Gate Charge vs Gate-source Voltage
Figure 13: Normalized Gate Threshold Voltage
vs Tem p.
Figure 11: Transfer Characteristics
Figure 14: Static Drain-source On Resistance
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STP20NM60 - STP20NM60FP - STB20NM 60 - STW20NM60 - STB20NM60-1
Figure 15: Capacitance Variations
Figure 16: Norm alized O n Resis tance vs T emperature
Figure 17: Sour ce-drain Diode Forward Characteristics
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STP20NM60 - STP20NM60FP - STB20NM60 - STW20NM60 - STB20NM60-1
Figure 18: Unclamped Inductive Load Test Circuit
Figure 19: Switching Times Test Circuit For
Resistive Load
Figure 21: Unclamped Inductive Wafeform
Figure 22: Gate Charge Test Circuit
Figure 20: Test Circuit For Inductive Load
Switching and Diode Recovery Times
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STP20NM60 - STP20NM60FP - STB20NM 60 - STW20NM60 - STB20NM60-1
TO-220 MECHANICAL DATA
DIM.
A 4.40 4.60 0.173 0.181
b 0.61 0.88 0.024 0.034
b1 1.15 1.70 0.045 0.066
c 0.49 0.70 0.019 0.027
D 15.25 15.75 0.60 0.620
E 10 10.40 0.393 0.409
e 2.40 2.70 0.094 0.106
e1 4.95 5.15 0.194 0.202
F 1.23 1.32 0.048 0.052
H1 6.20 6.60 0.244 0.256
J1 2.40 2.72 0.094 0.107
L 13 14 0.511 0.551
L1 3.50 3.93 0.137 0.154
L20 16.40 0.645
L30 28.90 1.137
ø P 3.75 3.85 0.147 0.151
Q 2.65 2.95 0.104 0.116
MIN. TYP MAX. M IN. TYP. MAX.
mm. inch
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STP20NM60 - STP20NM60FP - STB20NM60 - STW20NM60 - STB20NM60-1
TO-220FP MECHANICAL DATA
DIM.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 .0385 0.417
L5 2.9 3.6 0.114 0.141
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126
MIN. TYP MAX. MIN. TYP. MAX.
mm. inch
E
A
D
B
L3
L6
L7
1
F
F
1
H
G
G
L2
L5
2
F
123
L4
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STP20NM60 - STP20NM60FP - STB20NM 60 - STW20NM60 - STB20NM60-1
TO-263 (D2PAK) MECHANICAL DATA
DIM.
A 4.32 4.57 0.178 0.180
A1 0.00 0.25 0.00 0.009
b 0.71 0.91 0.028 0.350
b2 1.15 1.40 0.045 0.055
c 0.46 0.61 0.018 0.024
c2 1.22 1.40 0.048 0.055
D 8.89 9.02 9.40 0.350 0.355 0.370
D1 8.01 0.315
E 10.04 10.28 0.395 0.404
e 2.54 0.010
H 13.10 13.70 0.515 0.540
L 1.30 1.70 0.051 0.067
L1 1.15 1.39 0.045 0.054
L2 1.27 1.77 0.050 0.069
L4 2.70 3.10 0.106 0.122
V2 0° 8° 0°
MIN. TYP MAX. MIN. TYP. MAX.
mm. inch
8°
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STP20NM60 - STP20NM60FP - STB20NM60 - STW20NM60 - STB20NM60-1
TO-262 (I2PAK) MECHANICAL DATA
DIM.
A 4.40 4.60 0.173 0.181
A1 2.40 2.72 0.094 0.107
b 0.61 0.88 0.024 0.034
b1 1.14 1.70 0.044 0.066
c 0.49 0.70 0.019 0.027
c2 1.23 1.32 0.048 0.052
D 8.95 9.35 0.352 0.368
e 2.40 2.70 0.094 0.106
e1 4.95 5.15 0.194 0.202
E 10 10.40 0.393 0.410
L 13 14 0.511 0.551
L1 3.50 3.93 0.137 0.154
L2 1.27 1.40 0.050 0.055
MIN. TYP MAX. MIN. TYP. MAX.
mm. inch
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STP20NM60 - STP20NM60FP - STB20NM 60 - STW20NM60 - STB20NM60-1
D2PAK FOOTPRINT
TAPE AND REEL SHIPMENT (suffix ” T4” )*
TUBE SHIPMENT (no suffix)*
REEL MECHANICAL DATA
DIM.
A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0795
G 24.4 26.4 0.960 1.039
N 100 3.937
T 30.4 1.197
mm inch
MIN. MAX. MIN. MAX.
T APE MECHANICAL DATA
DIM.
A0 10.5 10.7 0.413 0.421
B0 15.7 15.9 0.618 0.626
D 1.5 1.6 0.059 0.063
D1 1.59 1.61 0.062 0.063
E 1.65 1.85 0.065 0.073
F 11.4 11.6 0.449 0.456
K0 4.8 5.0 0.189 0.197
P0 3.9 4.1 0.153 0.161
P1 11.9 12.1 0.468 0.476
P2 1.9 2.1 0.075 0.082
R 50 1.574
T 0.25 0.35 0.0098 0.0137
W 23.7 24.3 0.933 0.956
* on sales type
mm inch
MIN. MAX. MIN. MAX.
BASE QTY BULK QTY
1000 1000
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STP20NM60 - STP20NM60FP - STB20NM60 - STW20NM60 - STB20NM60-1
TO-247 MECHANICAL DATA
DIM.
A 4.85 5.15 0.19 0.20
A1 2.20 2.60 0.086 0.102
b 1.0 1.40 0.039 0.055
b1 2.0 2.40 0.079 0.094
b2 3.0 3.40 0.118 0.134
c 0.40 0.80 0.015 0.03
D 19.85 20.15 0.781 0.793
E 15.45 15.75 0.608 0.620
e5 . 4 5 0 . 2 1 4
L 14.20 14.80 0.560 0.582
L1 3.70 4.30 0.14 0.17
L2 18.50 0.728
øP 3.55 3.65 0.140 0.143
øR 4.50 5.50 0.177 0.216
S5 . 5 0 0 . 2 1 6
MIN. TYP MAX. MIN. TYP. MAX.
mm. inch
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STP20NM60 - STP20NM60FP - STB20NM 60 - STW20NM60 - STB20NM60-1
Table 9: Revision History
Date Revision Description of Change s
26-Jul-2004 1 First Release
17-Feb-2005 2 Insert the TO-247 package
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STP20NM60 - STP20NM60FP - STB20NM60 - STW20NM60 - STB20NM60-1
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