Datasheet STP200NF04, STB200NF04, STB200NF04-1 Datasheet (ST)

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N-CHANNEL 40V - 120 A - 3.3 mΩ TO-220/D²PAK/I²PAK

STP200NF04

STB200NF04 - STB200NF04-1

STripFET™II MOSFET

Table 1: Ge neral Features

Type V

STB200NF04
STB200NF04-1
STP200NF04

■ STANDARD THRESHOLD DRIVE

■ 100% AVALANCHE TESTED

DSS

40 V
40 V
40 V

R

DS(on)

< 0.0037 Ω
< 0.0037 Ω
< 0.0037 Ω

I

D

120 A
120 A
120 A

Pw

310 W
310 W
310 W

DESCRIPTION

This MOSFET is th e latest developm ent of STM i­croelectronics unique “Single Feature Size™”
strip-based process. The resulting transistor
shows extremely high pac king density for low on­resistance, rugged avalance characteristics and
less critical alignment steps therefore a remark­able manufacturing reproducibility.

APPLICATIONS

■ HIGH CURRENT, HIGH SWI TCHIN G SPEED

■ AUTOMOTIVE

Figure 1: Package

3

2

1

1

D2PAK

TO-220

3

2

1

I2PAK

Figure 2: Internal Schematic Diagram

3

Table 2: Order Codes

SALES TYPE MARKING PACKAGE PACKAGING

STB200NF04T4 B200NF04

STB200NF04-1 B200NF04

STP200NF04 P200NF04 TO-220 TUBE

D

2

I

2

PAK

PAK

TAPE & REEL

TUBE

Rev. 3

1/15October 2004

STP200NF04 - STB200NF04 - STB200NF04-1

Table 3: Absolute Maximum ratings

Symbol Parameter Value Unit

V

DS

V

DGR

V

GS

I

(#) Drain Current (continuos) at TC = 25°C

D

ID (#) Drain Current (continuos) at TC = 100°C

I

DM

P

TOT

dv/dt (1) Peak Diode Recovery voltage slope 1.5 V/ns

E

AS

T

j

T

stg

() Pulse wi dt h l i m i ted by safe operating area

≤120A, di/dt ≤500A/µs, VDD ≤ V

(1) I

SD

(2) Starting Tj = 25°C, Id = 60A, VDD=30 V
(#) Current Limited by Package

Table 4: Thermal Data

Rthj-case Thermal Resistance Junction-case Max 0.48 °C/W

Rthj-pcb Thermal Resistance Junction-pcb Max (see Figure 17) °C/W

Rthj-amb Thermal Resistance Junction-ambient (Free air) Max 62.5 °C/W

T

l

Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)

40 V
40 V

Gate- source Voltage ± 20 V

120 A
120 A

()

Drain Current (pulsed) 480 A
Total Dissipation at TC = 25°C

310 W

Derating Factor 2.07 W/°C

(2)

Single Pulse Avalanche Energy 1.3 J
Operating Junction Temperature

Storage Temperature

, Tj ≤ T

(BR)DSS

JMAX.

Maximum Lead Temperature For Soldering Purpose

-55 to 175 °C

2

TO-220 / I

PAK / D2PAK

300 °C

ELECTRICAL CHARACTERISTICS (T

=25°C UNLESS OTHERWISE SPECIFIED)

CASE

Table 5: On/Off

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

I

DSS

I

GSS

V

GS(th)

R

DS(on)

Drain-source
Breakdown Voltage

Zero Gate Voltage
Drain Current (V

GS

= 0)

Gate-body Leaka ge
Current (V

DS

= 0)
Gate Threshold Voltage
Static Drain-source On

Resistance

ID = 250 µA, VGS = 0 40 V

V

= Max Rating

DS

= Max Rating, TC = 125 °C

V

DS

V

= ± 20V ±100 nA

GS

V

= VGS, ID = 250µA

DS

24V

1

10

VGS = 10V, ID = 90 A 3.3 3.7 mΩ

µA
µA

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STP200NF04 - STB200NF04 - STB200NF04-1

ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 6: Dynamic

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(1) Forward Transconductance VDS = 15 V, ID= 90 A 150 S

g

fs

C

iss

C

oss

C

rss

Table 7: Switching On/Off

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

t

r

t

d(off)

t

f

Q

g

Q

gs

Q

gd

Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance

Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time

Total Gate Charge
Gate-Source Charge
Gate-Drain Charge

= 25V, f = 1 MHz, VGS = 0 5100

V

DS

= 20 V, ID = 90 A

V

DD

R

=4.7Ω VGS = 10 V

G

(see Figure 20)

= 20V, ID = 120 A,

V

DD

V

= 10V

GS

(see Figure 23)

1600

600

30
320
140
120

170

30

62

210

pF
pF
pF

ns
ns
ns
ns

nC
nC
nC

Table 8: Source Drain Diode

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

VSD (1)

t

rr

Q

rr

I

RRM

(1) Pulsed: Pulse duratio n = 300 µs, duty cycl e 1.5 %.
(2) Pulse wi dt h l i m i ted by safe operat i ng area.

(2)

Source-drain Current
Source-drain Current (pulsed)

Forward On Voltage
Reverse Recovery Time

Reverse Recovery Charge
Reverse Recovery Current

ISD = 120 A, VGS = 0

= 120 A, di/dt = 100A/µs

I

SD

V

= 30V, Tj = 150°C

DD

(see Figure 21)

85
190

4.5

120
480

1.3 V

A
A

ns
nC

A

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STP200NF04 - STB200NF04 - STB200NF04-1

Figure 3: Safe Operating Area

Figure 4: Output Characteristics

Figure 6: Thermal Impedance

Figure 7: Transfer Characteristics

Figure 5: Transconductance

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Figure 8: Static Drain-source On Resistance

STP200NF04 - STB200NF04 - STB200NF04-1

Figure 9: Gate Charge vs Gate-source Voltag e

Figure 10: Normalized Gate Thereshold Volt­age vs Temperature

Figure 12: Capacitance Variations

Figure 13: Normal ized On R esistance vs Tem­perature

Figure 11: Dource -Drain Diode Forward Ch ar­acteristics

Figure 14: Normalized Breakdown Voltage vs
Temperature

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STP200NF04 - STB200NF04 - STB200NF04-1

Figure 15: Thermal Resistance Rthj-a vs PCB
Copper Area

Figure 16: Max Power Dissipation vs PCB Cop­per Area

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STP200NF04 - STB200NF04 - STB200NF04-1

Figure 17: Allowable lav vs. Time in Avalanche

The previous curve gives the safe operating area for unclamped inductive loads, single pulse or repetitive,
under the following conditions:

P

D(AVE)

E

AS(AR)

= 0.5 * (1.3 * BV
= P

D(AVE)

* t

AV

DSS

* IAV)

Where:

is the Allowable Current in Avalanche

I

AV

P
t

AV

is the Average Power Dissipation in Avalanche (Single Pulse)

D(AVE)

is the Time in Avalanche

To derate above 25 °C, at fixed I

I

AV

Where:

= K * R

Z

th

is the value coming from Normalized Thermal Response at fixed pulse width equal to TAV.

th

the following equation must be applied:

AV,

= 2 * (T

jmax

- T

) / (1.3 * BV

CASE

DSS

* Zth)

7/15

STP200NF04 - STB200NF04 - STB200NF04-1

SPICE THERMAL MODEL

Table 9: 6th Order RC Network

Parameter Node Value

CTHERM1 1 - 2 1.4958E-3
CTHERM2 2 - 3 3.5074E-2
CTHERM3 3 - 4 5.939E-2
CTHERM4 4 - 5 9.7411E-2
CTHERM5 5 - 6 8.8596E-2
CTHERM6 6 - 7 8.2755E-1

RTHERM1 1 - 2 0.0384
RTHERM2 2 - 3 0.0624
RTHERM3 3 - 4 0.072
RTHERM4 4 - 5 0.0912
RTHERM5 5 - 6 0.1008
RTHERM6 6 - 7 0.1152

Figure 18 : Sc hematic of 6th Order R C N et wor k

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STP200NF04 - STB200NF04 - STB200NF04-1

Figure 19: Unclamped Inductive Load Test Cir­cuit

Figure 20: Switching Times Test Circuit For
Resistive Load

Figure 22: Unclamped Inductive Wafeform

Figure 23: Gate Charge Test Circuit

Figure 21: Test Circuit For Inductive Load
Switching and Diode Recovery Times

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STP200NF04 - STB200NF04 - STB200NF04-1

TO-220 MECHANICAL DATA

DIM.

A 4.40 4.60 0.173 0.181
b 0.61 0.88 0.024 0.034

b1 1.15 1.70 0.045 0.066

c 0.49 0.70 0.019 0.027
D 15.25 15.75 0.60 0.620
E 10 10.40 0.393 0.409
e 2.40 2.70 0.094 0.106

e1 4.95 5.15 0.194 0.202

F 1.23 1.32 0.048 0.052
H1 6.20 6.60 0.244 0.256
J1 2.40 2.72 0.094 0.107

L 13 14 0.511 0.551
L1 3.50 3.93 0.137 0.154

L20 16.40 0.645
L30 28.90 1.137

øP

Q 2.65 2.95 0.104 0.116

MIN. TYP MAX. MIN. TYP. MAX.

3.75 3.85 0.147 0.151

mm. inch

10/15

STP200NF04 - STB200NF04 - STB200NF04-1

D2PAK MECHANICAL DATA

TO-247 MECHANICAL DATA

DIM.

A 4.4 4.6 0.173 0.181
A1 2.49 2.69 0.098 0.106
A2 0.03 0.23 0.001 0.009

B 0.7 0.93 0.027 0.036
B2 1.14 1.7 0.044 0.067

C 0.45 0.6 0.017 0.023
C2 1.23 1.36 0.048 0.053

D 8.95 9.35 0.352 0.368
D1 8 0.315

E 10 10.4 0.393
E1 8.5 0.334

G 4.88 5.28 0.192 0.208

L 15 15.85 0.590 0.625
L2 1.27 1.4 0.050 0.055
L3 1.4 1.75 0.055 0.068

M 2.4 3.2 0.094 0.126

R0.4 0.015
V2 0º 4º

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

3

1

11/15

STP200NF04 - STB200NF04 - STB200NF04-1

TO-262 (I2PAK) MECHANICAL DATA

DIM.

A 4.40 4.60 0.173 0.181

A1 2.40 2.72 0.094 0.107

b 0.61 0.88 0.024 0.034

b1 1.14 1.70 0.044 0.066

c 0.49 0.70 0.019 0.027

c2 1.23 1.32 0.048 0.052

D 8.95 9.35 0.352 0.368
e 2.40 2.70 0.094 0.106

e1 4.95 5.15 0.194 0.202

E 10 10.40 0.393 0.410

L 13 14 0.511 0.551
L1 3.50 3.93 0.137 0.154
L2 1.27 1.40 0.050 0.055

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

12/15

STP200NF04 - STB200NF04 - STB200NF04-1

D2PAK FOOTPRINT

TAPE AND REEL SHIPMENT (suffix ”T4”)*

TUBE SHIPMENT (no suffix)*

REEL MECHANICAL DATA

DIM.

A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0795
G 24.4 26.4 0.960 1.039
N 100 3.937
T 30.4 1.197

mm inch

MIN. MAX. MIN. MAX.

T APE MECHANICAL DATA

DIM.

A0 10.5 10.7 0.413 0.421
B0 15.7 15.9 0.618 0.626

D 1.5 1.6 0.059 0.063

D1 1.59 1.61 0.062 0.063

E 1.65 1.85 0.065 0.073

F 11.4 11.6 0.449 0.456
K0 4.8 5.0 0.189 0.197
P0 3.9 4.1 0.153 0.161
P1 11.9 12.1 0.468 0.476
P2 1.9 2.1 0.075 0.082

R 50 1.574

T 0.25 0.35 0.0098 0.0137

W 23.7 24.3 0.933 0.956

* on sales type

mm inch

MIN. MAX. MIN. MAX.

BASE QTY BULK QTY

1000 1000

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STP200NF04 - STB200NF04 - STB200NF04-1

Table 10: Revision History

Date Revision Description of Change s

28-Sep-2004 2 New Stylesheet. No Content Change

11-Oct-2004 3 Final datasheet

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STP200NF04 - STB200NF04 - STB200NF04-1

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