Datasheet STB19NB20 Datasheet (SGS Thomson Microelectronics)



STB19NB20

N - CHANNEL ENHANCEMENT MODE

PowerMESH MOSFET

TYPE V

DSS

R

DS(on)

I

D

ST B19NB20 200 V < 0.180 Ω 19 A

■ TYPICALR

■ EXTREMELYHIGH dv/dtCAPABILITY

■ 100%AVALANCHETESTED

■ VERYLOW INTRINSIC CAPACITANCES

■ GATECHARGE MINIMIZED

■ FORTHROUGH-HOLE VERSION CONTACT

DS(on)

= 0.150 Ω

SALESOFFICE

DESCRIPTION

Usingthe latesthigh voltageMESHOVERLAY



process, STMicroelectronics has designed an
advanced family of Power MOSFETs with
outstanding performance. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.

APPLICATIONS

■ HIGHCURRENT, HIGH SPEED SWITCHING

■ SWITCHMODE POWER SUPPLIES (SMPS)

■ DC-AC CONVERTERS FOR WELDING

EQUIPMENTANDUNINTERRUPTIBLE
POWERSUPPLIESAND MOTOR DRIVE

3

1

D2PAK
TO-263

(suffix ”T4”)

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symb o l Parameter Val u e Uni t

V

V

V

I

DM

P

dv/dt(

T

(•) Pulse width limited by safe operating area (1)ISD≤ 19A, di/dt ≤ 300A/µs, VDD≤ V

June 1998

Drain-sourc e Voltage (VGS=0) 200 V

DS

Drain- ga t e Voltage (RGS=20kΩ)200V

DGR

Gate-s ource Volt age

GS

I

Drain Cur rent ( cont i nuous) at Tc=25oC19A

D

I

Drain Cur rent ( cont i nuous) at Tc= 100oC12A

D

30 V

±

(•) Drain Current (pulsed) 76 A

Total Dissipation at Tc=25oC125W

tot

Derating Factor 1 W/

1) Peak D iode R ecov e r y voltage slope 5.5 V/ ns

St orage Temper at u re -65 to 150

stg

T

Max. Operating Junction Temp erat u re 150

j

(BR)DSS

,Tj≤T

JMAX

o

C

o

C

o

C

1/8

STB19NB20

THERMAL DATA

R

thj-case

R

thj-amb

R

thc-sink

T

AVALANCHE CHARACTERISTICS

Symbol Parameter Max V alue Unit

I

AR

E

Ther mal Res istance Junct ion-case Max 1
Ther mal Res istance Junct ion-ambie nt Max

Ther mal Res istance C as e - sink Ty p
Maximum Lead T e m pe rat ur e F or So ldering Purpose

l

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T

Single Pul se Avalanc he E nergy

AS

(starting T

=25oC, ID=IAR,VDD=50V)

j

max)

j

62.5

0.5

300

19 A

580 mJ

o

C/W

o

C/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS

=25oC unless otherwisespecified)

(T

case

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

Drain-source

ID=250µAVGS= 0 200 V

Break dow n Vo lt age

I

DSS

I

GSS

Zero Gate Voltage
Drain Curre nt (V

GS

Gat e- bod y Leakag e
Current (V

DS

=0)

=0)

V

=MaxRating

DS

=MaxRating Tc=125oC

V

DS

V

= ± 30 V ± 100 nA

GS

1

10

ON(∗)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

Gate Threshold Voltage VDS=VGSID= 250 µ A 345V
Sta t ic Drain-s our c e On

VGS=10V ID= 9.5 A 0.150 0. 180

Resistance

I

D(on)

On StateDrain Current VDS>I

D(on)xRDS(on)ma x

19 A

VGS=10V

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

g

(∗)Forward

fs

Tr ansc on duc tance

C

C

C

Input Capaci t ance

iss

Out put Capac itance

oss

Reverse Transfer

rss

Capacit a nc e

VDS>I

D(on)xRDS(on)ma xID

=9.5 A 3 S

VDS=25V f=1MHz VGS= 0 1000

285

45

1350

385

60

µ
µA

Ω

pF
pF
pF

A

2/8

STB19NB20

ELECTRICAL CHARACTERISTICS

(continued)

SWITCHINGON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

t

r

Turn-on Time
Rise Time

VDD=100V ID= 9.5 A
R

=4.7

G

Ω

VGS=10V

15
15

20
20

(see test circuit, figure 3)

Q
Q
Q

Tot al Gate C harge

g

Gat e- Source Charge

gs

Gate-Drain Charge

gd

VDD= 160 V ID=19A VGS=10V 29

9.5
13

40 nC

SWITCHINGOFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

r(Voff)

t

t

Off-voltage Ris e Time
Fall T ime

f

Cross-over Time

c

VDD=160V ID=19A

=4.7 Ω VGS=10V

R

G

(see test circuit, figure 5)

10
10
20

15
15
30

SOURCEDRAINDIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

Q

I

RRM

(∗) Pulsed:Pulse duration = 300µs, duty cycle 1.5%
(•) Pulse width limited by safeoperating area

Source-drain Current

(•)

Source-drain Current

19
76

(pulsed)

(∗)ForwardOnVoltage ISD=19 A VGS=0 1.5 V

Reverse Recovery

rr

Time
Reverse Recovery

rr

ISD=19 A di/dt = 10 0 A/µs

=50V Tj= 150oC

V

DD

(see test circuit, figure 5)

210

1.5

Charge
Reverse Recovery

14.5

Current

ns
ns

nC
nC

ns
ns
ns

A
A

ns

µ

A

C

SafeOperating Area ThermalImpedance

3/8

STB19NB20

OutputCharacteristics

Transconductance

TransferCharacteristics

Static Drain-sourceOn Resistance

Gate Charge vs Gate-sourceVoltage

4/8

CapacitanceVariations

STB19NB20

NormalizedGate ThresholdVoltage vs
Temperature

Source-drainDiode ForwardCharacteristics

NormalizedOn Resistancevs Temperature

5/8

STB19NB20

Fig. 1:

UnclampedInductiveLoad Test Circuit

Fig. 3: SwitchingTimes Test CircuitsFor
ResistiveLoad

Fig. 2:

UnclampedInductive Waveform

Fig. 4: Gate Charge test Circuit

Fig. 5:

Test CircuitFor InductiveLoad Switching

And Diode Recovery Times

6/8

TO-263 (D2PAK) MECHANICAL DATA

STB19NB20

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181

A1 2.49 2.69 0.098 0.106

B 0.7 0.93 0.027 0.036

B2 1.14 1.7 0.044 0.067

C 0.45 0.6 0.017 0.023

C2 1.21 1.36 0.047 0.053

D 8.95 9.35 0.352 0.368
E 10 10.4 0.393 0.409

G 4.88 5.28 0.192 0.208

L 15 15.85 0.590 0.624
L2 1.27 1.4 0.050 0.055
L3 1.4 1.75 0.055 0.068

mm inch

D

A

C2

DETAIL”A”

C

A2

DETAIL”A”

A1

B2

E

L2

L

L3

B

G

P011P6/E

7/8

STB19NB20

Information furnished is believed tobeaccurateand reliable.However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publicationare
subjecttochange without notice.This publication supersedes andreplaces all information previouslysupplied.STMicroelectronics products
are not authorized for use as critical components in life support devices or systemswithout express written approval of STMicroelectronics.

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