Datasheet STB16NS25 Datasheet (SGS Thomson Microelectronics)

STB16NS25

N-CHANNEL 250V - 0.23Ω -16AD2PAK

MESH OVERLAY™ MOSFET

TYPE V

DSS

R

DS(on)

I

D

STB16NS25 250 V < 0.28 Ω 16 A

■ TYPICAL R

■ EXTREMELY HIGHdv/dt CAPABILITY

■ 100% AVALANCHE TESTED

(on) = 0.23 Ω

DS

DESCRIPTION

Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an a d­vanced family of power MOSFETs with outstanding
performance. The new patented STrip layout co u­pled with t he C ompany’s proprietary edge te rmin a­tion structure, makes it s uitable in coverters for
lighting applications.

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ SWITH MODE POWER SUPPLIES (SMPS)

■ DC-DC CONVERTERS FOR TELECOM,

INDUSTRIAL, AND LIGHTING EQUIPMENT

3

1

D2PAK

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

DS

V

DGR

V

GS

I

D

I

D

IDM()

P

TOT

dv/dt (1) Peak Diode Recovery voltage slope 5 V/ns

T

stg

T

j

(•)Pulse width limited by safe operating area

Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)

250 V

250 V
Gate- source Voltage ± 20 V
Drain Current (continuos) at TC= 25°C
Drain Current (continuos) at TC= 100°C

16 A

11 A
Drain Current (pulsed) 64 A
Total Dissipation at TC= 25°C

140 W

Derating Factor 1 W/°C

Storage Temperature –65 to 175 °C
Max. Operating Junction Temperature 175 °C

(1) ISD≤ 16A, di/dt≤300 A/µs, VDD≤ V

(BR)DSS

,Tj≤T

jMAX

1/9February 2003

STB16NS25

THERMAL DATA

Rthj-case Thermal Resistance Junction-case Max 0.9 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W

T

l

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Unit

I

AR

E

AS

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

I

DSS

I

GSS

Maximum Lead Temperature For Soldering Purpose 300 °C

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T

max)

j

Single Pulse Avalanche Energy
(starting T

Drain-source

= 25 °C, ID=IAR,VDD=28V)

j

ID= 250 µA, VGS= 0 250 V

16 A

200 mJ

Breakdown Voltage

= Max Rating

Zero Gate Voltage
Drain Current (V

GS

Gate-body Leakage
Current (V

DS

=0)

=0)

V

DS

= Max Rating, TC= 125 °C

V

DS

V

= ± 20 V ±100 nA

GS

1µA

50 µA

ON (1)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

Gate Threshold Voltage
Static Drain-source On

V

DS=VGS,ID

VGS=10V,ID=8A

= 250µA

234V

0.23 0.28 Ω

Resistance

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(1) Forward Transconductance VDS>I

g

fs

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance 190 pF
Reverse Transfer

Capacitance

D(on)xRDS(on)max,

ID=8A

V

=25V,f=1MHz,VGS=0

DS

14 15 S

1270 pF

75 pF

2/9

STB16NS25

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

t

d(on)

Q
Q
Q

t

r

g
gs
gd

Turn-on Delay Time
Rise Time 25 ns
Total Gate Charge

Gate-Source Charge 8 nC
Gate-Drain Charge 22 nC

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(off)

t

t

r(Voff)

t
t

f

f

c

Turn-off- Delay Time
Fall Time

Off-voltage Rise Time
Fall Time
Cross-over Time

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

rr

Q

rr

I

RRM

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by s afe operating area.

Source-drain Current 16 A

(2)

Source-drain Current (pulsed) 64 A

(1)

Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge 1.5 µC
Reverse Recovery Current 11.5 A

=125V,ID=8A

DD

R

= 4.7Ω VGS=10V

G

(see test circuit, Figure 3)
V

=200V,ID=16A,

DD

=10V

V

GS

VDD= 125V, ID=8A,
RG=4.7Ω, VGS= 10V
(see test circuit, Figure 3)

= 200V, ID=16A,

V

clamp

RG=4.7Ω, VGS= 10V
(see test circuit, Figure 5)

ISD=16A,VGS=0
I

= 16 A, di/dt = 100A/µs

SD

V

=33V,Tj= 150°C

DD

(see test circuit, Figure 5)

15 ns

60 80 nC

75
35

25
30
55

1.5 V

270 ns

ns
ns

ns
ns
ns

Thermal ImpedanceSafe Operati ng Area

3/9

STB16NS25

Transfer CharacteristicsOutput Characteristics

Transconductance

Gate Charge vs Gate-so urce Voltage

Static Drain-source On Resistance

Capacitance Variations

4/9

STB16NS25

Normalized On Resistance vs Tem peratureNormalized Gate Theresho ld Voltage vs Temp.

Source-drain Diode Forward Characteristics

Normalized BVDSS vs Temperature

5/9

STB16NS25

Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit

Fig. 3: Switching Times Test Circuit For

Resistive Loa d

Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times

Fig. 4: Gate Charge test Circuit

6/9

D2PAK MECHANICAL DATA

STB16NS25

DIM.

MIN. TYP MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181
A1 2.49 2.69 0.098 0.106
A2 0.03 0.23 0.001 0.009

B 0.7 0.93 0.027 0.036
B2 1.14 1.7 0.044 0.067

C 0.45 0.6 0.017 0.023
C2 1.23 1.36 0.048 0.053

D 8.95 9.35 0.352 0.368
D1 8 0.315

E 10 10.4 0.393
E1 8.5 0.334

G 4.88 5.28 0.192 0.208

L 15 15.85 0.590 0.625
L2 1.27 1.4 0.050 0.055
L3 1.4 1.75 0.055 0.068

mm. inch

M 2.4 3.2 0.094 0.126

R 0.4 0.015
V2 0º 4º

3

7/9

1

STB16NS25

D2PAK FOOTPRINT

TAPE AND REEL SHIPMENT (suffix ”T4”)*

TUBE SHIPMENT (no suffix)*

REEL MECHANICAL DATA

DIM.

A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0795
G 24.4 26.4 0.960 1.039
N 100 3.937
T 30.4 1.197

mm inch

MIN. MAX. MIN. MAX.

TAPE MECHANICAL DATA

DIM.

A0 10.5 10.7 0.413 0.421
B0 15.7 15.9 0.618 0.626

D 1.5 1.6 0.059 0.063

D1 1.59 1.61 0.062 0.063

E 1.65 1. 85 0.065 0.073

F 11.4 11.6 0.449 0.456
K0 4.8 5.0 0.189 0.197
P0 3.9 4.1 0.153 0.161
P1 11.9 12.1 0.468 0.476
P2 1.9 2.1 0.075 0.082

R 50 1.574

T 0.25 0.35 0.0098 0.0137

W 23.7 24.3 0.933 0.956

* on sales ty pe

8/9

mm inch

MIN. MAX. MIN. MAX.

BASE QTY BULK QTY

1000 1000

STB16NS25

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of u se of such inf ormat ion nor for any in fring ement of p aten ts or othe r ri ghts of th ird p arties whic h may resul t f rom
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.

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