Datasheet STB16NF06L Datasheet (SGS Thomson Microelectronics)

STB16NF06L

N-CHANNEL 60V - 0.07 Ω - 16A D2PAK

STripFET™ POWER MOSFET

TYPE

V

DSS

STB16NF06L 60 V <0.09

■ TYPICAL R

■ EXCEPTIONA L dv/d t CAPABILITY

■ LOW GATE CHARGE AT 100

■ LOW THRESHOLD DRIVE

■ SURFACE-MOUNTING D

(on) = 0.07Ω

DS

R

DS(on)

Ω

o

C

2

PAK (TO-263)

I

D

16 A

POWER PACKAG E IN TU BE (NO SU FFIX) OR

IN TAPE & REEL (SUFFIX “T4”)

DESCRIPTION

This Power MOSFET is the latest development of

STMicroelectron is unique "Single Feature Size™" str ip­based process . The res ulting tran sistor sho ws extrem ely
high packing density for low on-resistance, rugged
avalanche characteristics and less critical alignment
steps therefore a remarkable manufacturing
reproducibility.

APPLICATIONS

■ MOTOR CONTROL, AUDIO AMPLIFIERS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ SOLENOID AND RELAY DRIVERS

■ DC-DC & DC-AC CONVERTERS

■ AUTOMOTIVE ENVIRONMENT

3

1

D2PAK

TO-263

(Suffix “T4”)

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

DS

V

DGR

V

GS

I

D

I

D

(

I

DM

P

tot

dv/dt

E

AS

T

stg

T

j

(

Pulse width l i mited by safe operating area. (1) ISD ≤ 16A, di/dt ≤ 210A/µs , VDD ≤ V

•)

.

Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)

60 V
60 V

Gate- source Voltage ± 16 V

Drain Current (continuos) at TC = 25°C
Drain Current (continuos) at TC = 100°C

•)

Drain Current (pulsed) 64 A
Total Dissipation at TC = 25°C

16 A
11 A

45 W

Derating Factor 0.3 W/°C

(1)

Peak Diode Recovery voltage slope 23 V/ns

(2)

Single Pulse Avalanche Energy 127 mJ
Storage Temperature -65 to 175 °C
Max. Operating Junction Temperature -55 to 175 °C

(2) Starting Tj = 25 oC, ID = 8A, VDD = 30V

(BR)DSS

, Tj ≤ T

JMAX.

1/9February 2002

STB16NF06L

THERMA L D ATA

Rthj-case

Rthj-amb

T

Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose

j

Max
Max

Typ

3.33

62.5
300

°C/W
°C/W

°C

ELECTRICAL CHARACTERISTICS (T

= 25 °C unless otherwise specified)

case

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

V

(BR)DSS

Drain-source

= 250 µA, VGS = 0

D

60 V

Breakdown Voltage

V

= Max Rating

DS

V

= Max Rating TC = 125°C

DS

V

= ± 16V

GS

1

10

±100 nA

ON

(1)

I

DSS

I

GSS

Zero Gate Voltage
Drain Current (V

GS

Gate-body Leakage
Current (V

DS

= 0)

= 0)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

V

GS(th)

R

DS(on)

Gate Threshold Voltage
Static Drain-source On

Resistance

= VGS I

DS

= 5 V ID = 8 A

V

GS

V

= 10 V ID = 8 A

GS

= 250 µA

D

1V

0.08

0.07

0.10

0.09

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(*)

g

fs

C

iss

C

oss

C

rss

Forward Transconductance

Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance

> I

V
I

D

V

DS

=8 A

DS

x R

D(on)

DS(on)max,

= 25V, f = 1 MHz, VGS = 0

17 S

345

72
29

µA
µA

Ω
Ω

pF
pF
pF

2/9

STB16NF06L

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

= 30 V ID = 8 A

t

d(on)

Turn-on Delay Time

t

r

Rise Time

V

DD

R

= 4.7 Ω VGS = 4.5 V

G

(Resistive Load, Figure 3)

Q

g

Q

gs

Q

gd

Total Gate Charge
Gate-Source Charge
Gate-Drain Charge

= 48 V ID = 16 A VGS= 5V

V

DD

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

= 30 V ID = 8 A

t

d(off)

Turn-off Delay Time

t

f

Fall Time

V

DD

R

= 4.7Ω, V

G

GS

= 4.5 V

(Resistive Load, Figure 3)

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

rr

Q

rr

I

RRM

(*)

Pulsed: P ul se duration = 300 µs, duty cycle 1.5 %.

(

•)Pulse width limited by safe operating area.

Source-drain Current

(•)

Source-drain Current (pulsed)

(*)

Forward On Voltage
Reverse Recovery Time

Reverse Recovery Charge
Reverse Recovery Current

I

= 16 A VGS = 0

SD

= 16 A di/dt = 100A/µs

I

SD

V

= 16 V Tj = 150°C

DD

(see test circuit, Figure 5)

10
37

7.3

2.1

3.1

20

12.5

50

67.5

2.7

10 nC

16
64

1.3 V

ns
ns

nC
nC

ns
ns

A
A

ns

nC

A

Safe Operating Area Thermal Impedance

3/9

STB16NF06L

Output Characteristics Transfer Characteristics

Transconductance Static Drain-source On Resistance

Gate Charge vs Gate-source Voltage Capacitance Variations

4/9

STB16NF06L

Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature

Source-drain Diode Forward Characteristics

. .

.

5/9

STB16NF06L

Fig. 1: Unclamped Inductive Load Test CircuitFig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform

Fig. 3: Switching Times Test Circuits For Resistive

Load

Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times

Fig. 4: Gate Charge test Circuit

6/9

D2PAK MECHANICAL DA TA

STB16NF06L

DIM.

A 4.4 4.6 0.173 0.181
A1 2.49 2.69 0.098
A2 0.03 0.23 0.001 0.009

B 0.7 0.93 0.028 0.037
B2 1.14 1.7 0.045 0.067

C 0.45 0.6 0.018 0.024
C2 1.21 1.36 0.048 0.054

D 8.95 9.35 0.352 0.368
D1 8 0.315

E 10 10.4 0.394 0.409
E1 8.5 0.334

G 4.88 5.28 0.192 0.208

L 15 15.85 0.591 0.624
L2 1.27 1.4 0.050 0.055
L3 1.4 1.75 0.055 0.069

M 2.4 3.2 0.094 0.126

R 0.4 0.016

V2 0° 8° 0° 8°

MIN. TYP. MAX. MIN. TYP. TYP.

mm. inch.

0.106

7/9

STB16NF06L

D2PAK FOOTPRINT

TAPE AND REEL SHIPMENT (suffix ”T4”)*

TUBE SHIPMENT (no suffix)*

REEL MECHANICAL DATA

DIM.

A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0.795
G 24.4 26.4 0.960 1.039
N 100 3.937
T 30.4 1.197

mm inch

MIN. MAX. MIN. MAX.

TAPE MECHANICAL DATA

DIM.

A0 10.5 10.7 0.413 0.421
B0 15.7 15.9 0.618 0.626

D 1.5 1.6 0.059 0.063

D1 1.59 1.61 0.062 0.063

E 1.65 1.85 0.065 0.073

F 11.4 11.6 0.449 0.456
K0 4.8 5.0 0.189 0.197
P0 3.9 4.1 0.153 0.161
P1 11.9 12.1 0.468 0.476
P2 1.9 2.1 0075 0.082

R50 1.574

T0.25 0.35 .0.0098 0.0137

W 23.7 24.3 0.933 0.956

mm inch

MIN. MAX. MIN. MAX.

* on sales type

8/9

BASE QTY BULK QTY

1000 1000

STB16NF06L

Information furnished is believed to be ac curate and reliable. Howev er, STMicroelec tronics assumes no responsibility for t he consequ ences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implic ation or oth erwise under any patent or patent rights of STMicroelectron i cs . Specificat i ons mentioned in thi s publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical comp onents in life support devices or systems wi thout express written approval of STM i croelect ronics.

The ST log o i s registered trademark of STM icroelec tronics

2002 STMi croelectr oni cs - All Righ t s Reserved



All other names are the property of their respective owner s.

Australi a - Brazil - Canada - China - F i nl and - France - Germany - Hong Kong - India - Israel - Italy - Japan - Mal aysia - Malta - Morocco -

Singapor e - S pai n - Sweden - Swi t zerland - Uni t ed Kingdom - U ni t ed States.

STMicroelect ro n ics GRO UP OF COMPANI ES

http://www.st.com

9/9