Datasheet STB16NB25 Datasheet (SGS Thomson Microelectronics)



STB16NB25

N - CHANNEL 250V - 0.220Ω - 16A - TO-263

PowerMESH MOSFET

TYPE V

DSS

R

DS(on)

I

D

ST B16NB25 250 V < 0.28 Ω 16 A

■ TYPICALR

■ 100%AVALANCHETESTED

■ VERYLOW INTRINSIC CAPACITANCES

■ GATECHARGE MINIMIZED

■ EXTREMELY HIGH dv/dt CAPABILITY

■ FORTHROUGH-HOLE VERSIONCONTACT

DS(on)

= 0.220 Ω

SALESOFFICE

■ ADDSUFFIX ”T4” FORORDERING INTAPE

& REEL

DESCRIPTION

Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.

APPLICATIONS

■ HIGHCURRENT, HIGH SPEEDSWITCHING

■ UNINTERRUPTIBLE POWER SUPPLY (UPS)

■ DC-AC CONVERTERS FOR WELDING

EQUIPMENTANDUNINTERRUPTIBLE
POWERSUPPLIESAND MOTOR DRIVE

ABSOLUTE MAXIMUM RATINGS

3

1

D2PAK
TO-263

(suffix ”T4”)

INTERNAL SCHEMATIC DIAGRAM

Symb o l Parameter Val u e Uni t

V

V

V

I

DM

P

Drain-source Voltage (VGS=0) 250 V

DS

Drain- gate Voltag e (RGS=20kΩ)250V

DGR

Gate-s ource Voltage ± 30 V

GS

Drain Curr ent (conti nuous) at Tc=25oC16A

I

D

Drain Curr ent (conti nuous) at Tc= 100oC10A

I

D

(•) Drain Curr ent (pulsed) 64 A

Total Dissipation at Tc=25oC140W

tot

Derating Factor 1.12 W/

1) Peak Diode Recove ry voltag e slope 5.5 V/ ns

dv/dt(

T

(•) Pulse width limited by safe operating area (1)I

St orage Temp er atur e -65 to 150

stg

Max. Operat ing Junc tion T emperature 150

T

j

≤

16A,di/dt≤200 A/µs, V

SD

≤

DD

V

(BR)DSS

,Tj≤T

JMAX

March 1999

o

C

o

C

o

C

1/8

STB16NB25

THERMAL DATA

R

thj-case

Rthj-a mb

R

thc-sink

T

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Unit

I

AR

E

Ther mal Res istance Junc t ion-case Max
Ther mal Res istance Junc t ion-ambie nt Max
Ther mal Res istance Case -s ink Ty p
Maximum Lead Te m pe rat ur e For Solder ing Purpose

l

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T

Single Pulse A v alan c he Energy

AS

(starting T

=25oC, ID=IAR,VDD=50V)

j

max)

j

0.9

62.5

0.5

300

16 A

250 mJ

o

C/W

oC/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS

=25oC unless otherwisespecified)

(T

case

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

Drain-source

ID=250µAVGS= 0 250 V

Break dow n Volt age

I

DSS

I

GSS

Zero Gate Voltage
Drain Current (V

GS

Gat e- bod y Leakage
Current (V

DS

=0)

=0)

V

=MaxRating

DS

=MaxRating Tc=125oC

V

DS

V

=± 30 V

GS

1

10

100 nA

±

ON(∗)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

Gate Threshold Voltage VDS=VGSID= 250 µ A 345V
Sta t ic Drain-sour c e On

VGS=10V ID= 8 A 0.22 0.28

Resistance

I

D(on)

On State Drain Current VDS>I

D(on)xRDS(on)max

16 A

VGS=10V

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

g

(∗)Forward

fs

Tr ansc on duc tance

C

C

C

Input Capacitanc e

iss

Out put Capacitance

oss

Reverse Transfer

rss

Capacit a nc e

VDS>I

D(on)xRDS(on)maxID

=8 A 4 S

VDS=25V f=1MHz VGS= 0 1000

250

40

µ
µA

Ω

pF
pF
pF

A

2/8

STB16NB25

ELECTRICAL CHARACTERISTICS

(continued)

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

Tur n-on Delay Tim e
Rise Time

t

r

VDD=125V ID=8A
R

=4.7

G

Ω

VGS=10V

12
12

(Resis t iv e Load, see f ig. 3)

Q
Q
Q

Tot al Gate C har ge

g

Gat e- Source Charge

gs

Gate-Drain Charg e

gd

VDD= 200 V ID=16A VGS=10V 29

9

11

38 nC

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(off)

Tur n-of f Delay Time

t

Fall T ime

f

VDD=125V ID=8A

=4.7 Ω VGS=10V

R

G

35

8

(Resis t iv e Load, see f ig. 3)

t

r(Voff)

t

t

Off-voltage Rise Tim e
Fall T ime

f

Cross-over Tim e

c

V
R

=200V ID=16A

CLAM P

=4.7 Ω VGS=10V

G

(Indu ct iv e Load, see fig . 5)

10

9

20

SOURCEDRAINDIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SDM

V

I

SD

Q

I

RRM

SD

t

Source-drain Current

(•)

Source-drain Current

16
64

(pulsed)

(∗)ForwardOnVoltage ISD=16A VGS=0 1.5 V

Reverse Recovery

rr

Time
Reverse Recovery

rr

ISD= 16 A di/dt = 100 A/µs

=50V Tj=150oC

V

DD

(see test circuit, fig. 5)

210

1.5
Charge
Reverse Recovery

14

Current

ns
ns

nC
nC

ns
ns

ns
ns
ns

A
A

ns

µC

A

(∗) Pulsed:Pulse duration = 300 µs, dutycycle 1.5%
(•) Pulse width limited by safeoperatingarea

SafeOperating Area ThermalImpedance

3/8

STB16NB25

OutputCharacteristics

Transconductance

TransferCharacteristics

Static Drain-sourceOn Resistance

Gate Charge vs Gate-sourceVoltage

4/8

CapacitanceVariations

STB16NB25

NormalizedGate ThresholdVoltage vs
Temperature

Source-drainDiode ForwardCharacteristics

NormalizedOn Resistancevs Temperature

5/8

STB16NB25

Fig. 1: UnclampedInductiveLoad Test Circuit

Fig. 3: SwitchingTimesTest CircuitsFor
ResistiveLoad

Fig. 2:UnclampedInductive Waveform

Fig. 4: Gate Charge test Circuit

Fig. 5: TestCircuit ForInductiveLoad Switching
And Diode Recovery Times

6/8

TO-263 (D2PAK) MECHANICAL DATA

STB16NB25

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181

A1 2.49 2.69 0.098 0.106

B 0.7 0.93 0.027 0.036

B2 1.14 1.7 0.044 0.067

C 0.45 0.6 0.017 0.023

C2 1.21 1.36 0.047 0.053

D 8.95 9.35 0.352 0.368
E 10 10.4 0.393 0.409

G 4.88 5.28 0.192 0.208

L 15 15.85 0.590 0.624
L2 1.27 1.4 0.050 0.055
L3 1.4 1.75 0.055 0.068

mm inch

D

A

C2

DETAIL”A”

C

A2

DETAIL”A”

A1

B2

E

L2

L

L3

B

G

P011P6/E

7/8

STB16NB25

Information furnished is believed tobeaccurateand reliable.However, STMicroelectronics assumes no responsibilityforthe consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specificationmentioned in this publicationare
subjecttochange without notice. This publication supersedes andreplaces all information previouslysupplied.STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

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 1999 STMicroelectronics – Printed in Italy – All Rights Reserved

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8/8

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