Datasheet STB160NF3LL Datasheet (SGS Thomson Microelectronics)

STB160NF3LL

N-CHANNEL 30V - 0.0026 Ω - 160A D2PAK

STripFET™ II POWER MOSFET

PRELIMINARY DATA

TYPE

V

DSS

ST160NF3LL 30 V <0.003

■ TYPICAL R

■ LOW THRESHOLD DRIVE

■ ULTRA LOW ON-RESISTANCE

■ LOGIC LEVEL DEVICE

■ 100% AVALANCHE TESTED

■ SURFACE-MOUNTING D

(on) = 0.0026 Ω

DS

R

DS(on)

Ω

2

PAK (TO-263)

I

D

160 A

POWER PACKAG E IN TU BE (NO SU FFIX) OR

IN TAPE & REEL (SUFFIX “T4”)

DESCRIPTION

This Power MOSFET is the latest dev elo pment of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on­resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark­able manufacturing reproducibility.

APPLICATIONS

■ HIGH CURRENT, HIGH SWITCHING SPEED

■ MOTOR CONTROL, AUDIO AMPLIFIERS

■ DC-DC & DC-AC CONVERTERS

■ SOLENOID AND RELAY DRIVERS

3

1

D2PAK

TO-263

(Suffix “T4”)

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

DS

V

DGR

V

GS

∗

I

(

D

I

D

(

I

DM

P

tot

E

AS

T

stg

T

j

(

Pulse width limited by safe operating area.

•)

(*) Curren t Lim i ted by Pack age

May 2002

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)

30 V
30 V

Gate- source Voltage ± 15 V

Drain Current (continuous) at T

)

Drain Current (continuous) at TC = 100°C

•)

Drain Current (pulsed) 640 A
Total Dissipation at TC = 25°C

= 25°C

C

160 A
160 A

300 W

Derating Factor 2 W/°C

(1)

Single Pulse Avalanche Energy 1.2 J
Storage Temperature
Max. Operating Junction Temperature

(1) Starting Tj = 25 oC, ID = 80A, VDD = 20V

-55 to 175 °C

1/7

STB160NF3LL

THERMA L D ATA

Rthj-case

Rthj-amb

T

l

Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose

Max
Max

0.5

62.5
300

°C/W
°C/W

°C

ELECTRICAL CHARACTERISTICS (T

= 25 °C unless otherwise specified)

case

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

= 250 µA VGS = 0

V

(BR)DSS

Drain-source

I

D

30 V

Breakdown Voltage

= Max Rating

V

DS

= Max Rating TC = 125°C

V

DS

= ± 15 V

V

GS

1

10

±100 nA

ON

(*)

I

DSS

I

GSS

Zero Gate Voltage
Drain Current (V

GS

Gate-body Leakage
Current (V

DS

= 0)

= 0)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

V

GS(th)

R

DS(on)

Gate Threshold Voltage
Static Drain-source On

Resistance

= V

DS

GS

= 10 V ID = 80 A

V

GS

= 4.5 V ID = 80 A

V

GS

ID = 250 µA

1V

0.0026

0.0032

0.0030

0.0043

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(*)

g

fs

C

iss

C

oss

C

rss

Forward Transconductance
Input Capacitance

Output Capacitance
Reverse Transfer
Capacitance

V

= 15 V ID =80 A

DS

= 25V f = 1 MHz VGS = 0

V

DS

60 S

6200
1720

300

µA
µA

Ω
Ω

pF
pF
pF

2/7

STB160NF3LL

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

t

r

Q

g

Q

gs

Q

gd

(*)

Turn-on Time
Rise Time

Total Gate Charge
Gate-Source Charge
Gate-Drain Charge

= 15 V ID = 80 A

V

DD

= 4.7

R

Ω

G

VGS = 4.5 V

(Resistive Load, Figure 3)

=24V ID=160A VGS=5V

V

DD

50

350

95
25
45

125 nC

ns
ns

nC
nC

SWITCHING OFF

(*)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(off)

t

f

Turn-off Delay Time
Fall Time

SOURCE DRAIN DIODE

(*)

V

DD

= 4.7Ω, V

R

G

GS

(Resistive Load, Figure 3)

= 4.5 V

150
120

= 15 V ID = 80 A

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

rr

Q

rr

I

RRM

(*)

Pulsed: P ul se duration = 300 µs, duty cycle 1.5 %.

(

•)

Pulse width limited by T

Source-drain Current

(

•)

Source-drain Current (pulsed)

(*)

Forward On Voltage
Reverse Recovery Time

Reverse Recovery Charge
Reverse Recovery Current

jmax

I

= 160 A VGS = 0

SD

I

= 160 A di/dt = 100A/µs

SD

= 15 V Tj = 150°C

V

DD

(see test circuit, Figure 5)

160
640

1.3 V

90

200

5

ns
ns

A
A

ns

nC

A

3/7

STB160NF3LL

Fig. 1: Unclamped Inductive Load Test CircuitFig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform

Fig. 3: Switching Times Test Circuits For Resistive

Load

Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times

Fig. 4: Gate Charge test Circuit

4/7

D2PAK MECHANICAL DATA

STB160NF3LL

DIM.

A 4.4 4.6 0.173 0.181
A1 2.49 2.69 0.098
A2 0.03 0.23 0.001 0.009

B 0.7 0.93 0.028 0.037
B2 1.14 1.7 0.045 0.067

C 0.45 0.6 0.018 0.024
C2 1.21 1.36 0.048 0.054

D 8.95 9.35 0.352 0.368
D1 8 0.315

E 10 10.4 0.394 0.409

E1 8.5 0.334

G 4.88 5.28 0.192 0.208

L 15 15.85 0.591 0.624
L2 1.27 1.4 0.050 0.055
L3 1.4 1.75 0.055 0.069

M 2.4 3.2 0.094 0.126
R 0.4 0.015

V2 0° 8° 0° 8°

MIN. TYP. MAX. MIN. TYP. TYP.

mm. inch.

0.106

5/7

STB160NF3LL

D2PAK FOOTPRINT

TAPE AND REEL SHIPMENT (suffix ”T4”)*

TUBE SHIPMENT (no suffix)*

REEL MECHANICAL DATA

DIM.

A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0.795
G 24.4 26.4 0.960 1.039
N 100 3.937

T 30.4 1.197

mm inch

MIN. MAX. MIN. MAX.

TAPE MECHANICAL DATA

DIM.

A0 10.5 10.7 0.413 0.421
B0 15.7 15.9 0.618 0.626

D 1.5 1.6 0.059 0.063

D1 1.59 1.61 0.062 0.063

E 1.65 1.85 0.065 0.073

F 11.4 11.6 0.449 0.456
K0 4.8 5.0 0.189 0.197
P0 3.9 4.1 0.153 0.161
P1 11.9 12.1 0.468 0.476
P2 1.9 2.1 0075 0.082

R50 1.574

T0.25 0.35 .0.0098 0.0137

W 23.7 24.3 0.933 0.956

mm inch

MIN. MAX. MIN. MAX.

* on sales type

6/7

BASE QTY BULK QTY

1000 1000

STB160NF3LL

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implic ation or otherwise under any patent or p atent rights of STMi croelectr oni cs. Spec i fications mentioned i n this publicatio n are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as cri tical comp onents in life support dev i ces or systems wi t hout expres s written approval of STMi croelectr o nics.

The ST logo is registered trademark of STMicroelectronics

2002 STMi croelectr onics - All Rights Rese rved



All other na m es are the prop erty of their respectiv e owners.

Australi a - Brazil - Canada - Chin a - F i nl and - Franc e - Germany - Hong Kong - India - Israel - It al y - Japan - Mal aysia - Malta - Morocco -

Singap ore - Spain - Sw eden - Switze rl and - United Kingdom - U n i t ed States.

STMicroelectronics GROUP OF COMPANIES

http:// www.st.com

7/7