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STB160NF03L
N-CHANNEL 30V - 0.0021Ω - 160A D2 PAK
STripFET™ POWER MOSFET
TYPE V
DSS
STB160NF03L 30 V < 0.0030
■ TYPICAL R
■ LOW THRESHOLD DRIVE
■ ULTRA LOW ON-RESISTANCE
■ VERY LOW GATE CHARGE
■ 100% AVALANCHE TESTED
(on) = 0.0021Ω
DS
R
DS(on)
I
D
Ω
160 A
DESCRIPTION
This Power MOSFET is the latest dev elo pment of
STMicroelectronics unique “Single Feature
™” strip-based process. The re sulting tran-
Size
sistor shows extremely high packing density with
ultra low on-resistance, superior switching characteristics and less critical alignment steps therefore
a remarkable manufacturing reproducibility. This
device is particularly suitable for high current, low
voltage switching application where efficiency is
crucial.
APPLICATIONS
■ BUCK CONVERTERS IN HIGH
PERFORMANCE TELECOM AND VRMs
■ DC-DC CONVERTERS
3
1
D2PAK
(TO-263)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
I
(1) Drain Current (continuos) at TC = 25°C
D
I
D
I
DM
P
TOT
E
AS
T
stg
T
j
(●) Pulse width limited by safe operating area
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
30 V
30 V
Gate- source Voltage ±15 V
160 A
Drain Current (continuos) at TC = 100°C
(●)
Drain Current (pulsed) 640 A
Total Dissipation at TC = 25°C
113 A
300 W
Derating Factor 2 W/°C
(2)
Single Pulse Avalanche Energy 2 J
Storage Temperature –65 to 175 °C
Max. Operating Junction Temperature 175 °C
(1) Limited by Package
≤100A, di/dt ≤300A/µs, VDD ≤ V
(2) I
SD
(BR)DSS
, Tj ≤ T
JMAX.
1/9February 2001
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STB160NF03L
THERMA L D ATA
Rthj-case Thermal Resistance Junction-case Max 0.5 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
T
l
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
ON
(1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
I
D(on)
Maximum Lead Temperature For Soldering Purpose 300 °C
Drain-source
ID = 250 µA, VGS = 0 30 V
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
Gate-body Leakage
Current (V
DS
= 0)
Gate Threshold Voltage
Static Drain-source On
Resistance
On State Drain Current VDS > I
V
= Max Rating
DS
V
= Max Rating, TC = 125 °C
DS
V
= ±15V ±100 nA
GS
V
= VGS, ID = 250µA
DS
VGS = 10 V, ID = 80 A
VGS = 5 V, ID = 80 A
x R
D(on)
DS(on)max,
1V
0.0021 0.0030
0.0042 0.0070
160 A
1µA
10 µA
VGS=10V
Ω
Ω
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS > I
g
fs
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 1720 pF
Reverse Transfer
Capacitance
ID=80 A
V
DS
D(on)
x R
DS(on)max,
= 25V, f = 1 MHz, VGS = 0
210 S
5600 pF
310 pF
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STB160NF03L
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
t
d(on)
Q
Q
Q
t
r
g
gs
gd
Turn-on Delay Time
Rise Time 285 ns
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
t
d(off)
t
f
t
f
t
c
Turn-off-Delay Time
Fall Time
Off-voltage Rise Time
Fall Time
Cross-over Time
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD (2)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pu l se duration = 300 µs, duty cyc l e 1.5 %.
2. Pulse width li mited by safe o perating area .
Source-drain Current 160 A
(1)
Source-drain Current (pulsed) 640 A
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
= 15V, ID = 80A
DD
RG= 4.7Ω VGS = 10V
(see test circuit, Figure 3)
= 24V, ID = 160A,
V
DD
VGS = 10V
VDD = 15V, ID = 80A,
RG=4.7Ω, V
GS
= 10V
(see test circuit, Figure 5)
GS
=40A
D
= 10V
Vclamp =24V, I
RG=4.7Ω, V
ISD = 160A, VGS = 0
= 80A, di/dt = 100A/µs,
I
SD
VDD = 15V, Tj = 25°C
(see test circuit, Figure 5)
28 ns
123
21
40
110
65
110
35
70
1.3 V
80
180
4.5
nC
nC
nC
ns
ns
ns
ns
ns
ns
nC
A
Safe Operating Area
Ther m al Imp e d ance
3/9
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STB160NF03L
Output Characteristics
Tranconductance
Tranfer Characteristics
Static Drain-Source On Resistance
4/9
Capacitance VariationsGate Charge vs Gate-source Voltage
Page 5
STB160NF03L
Normalized Gate Thereshold Voltage vs Temp.
Source-drain Diode Forward Characteristics
Normalized On Resistance vs Temperatur e
5/9
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STB160NF03L
Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuit For
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
Fig. 4: Gate Charge test Circuit
6/9
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2
D
PAK MECHANICAL DATA
STB160NF03L
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
A1 2.49 2.69 0.098 0.106
A2 0.03 0.23 0.001 0.009
B 0.7 0.93 0.027 0.036
B2 1.14 1.7 0.044 0.067
C 0.45 0.6 0.017 0.023
C2 1.23 1.36 0.048 0.053
D 8.95 9.35 0.352 0.368
D1 8 0.315
E 10 10.4 0.393
E1 8.5 0.334
G 4.88 5.28 0.192 0.208
L 15 15.85 0.590 0.625
L2 1.27 1.4 0.050 0.055
L3 1.4 1.75 0.055 0.068
mm. inch
M 2.4 3.2 0.094 0.126
R 0.4 0.015
V2 0º8º
3
7/9
1
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STB160NF03L
D2PAK FOOTPRINT
TAPE AND REEL SHIPMENT (suffix ”T4”)*
TUBE SHIPMENT (no suffix)*
REEL MECHANICAL DATA
DIM.
A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0795
G 24.4 26.4 0.960 1.039
N 100 3.937
T 30.4 1.197
mm inch
MIN. MAX. MIN. MAX.
TAPE MECHANICAL DATA
DIM.
A0 10.5 10.7 0.413 0.421
B0 15.7 15.9 0.618 0.626
D 1.5 1.6 0.059 0.063
D1 1.59 1.61 0.062 0.063
E 1.65 1.85 0.065 0.073
F 11.4 11.6 0.449 0.456
K0 4.8 5.0 0.189 0.197
P0 3.9 4.1 0.153 0.161
P1 11.9 12.1 0.468 0.476
P2 1.9 2.1 0.075 0.082
R 50 1.574
T 0.25 0.35 0.0098 0.0137
W 23.7 24.3 0.933 0.956
* on sales type
8/9
mm inch
MIN. MAX. MIN. MAX.
BASE QTY BULK QTY
1000 1000
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STB160NF03L
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such informa tion n or for an y infring ement of patent s or other rig hts of third part ies which may resu lt from its use . No l i cen se i s
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical compo nents in life support devices or systems without express written approval of STMicroelectronics.
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