Page 1
N - CHANNEL ENHANCEMENT MODE
TYPE V
DSS
STB15N25 250 V < 0.25 Ω 15 A
R
DS(on)
I
D
STB15N25
POWER MOS TRANSISTOR
PRELIMINARY DATA
■ TYPICAL R
■ AVALANCHE RUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ REPETITIVE AVA LANCHE DATA AT 100
■ LOW INPUT CAPACITANCE
■ LOW GATE CHARGE
■ LOW LEAKAGE CURRENT
■ APPLICATION ORIENTED
DS(on)
= 0.2 Ω
o
C
CHARACTERIZATION
■ THROUGH-HO LE I2PAK (TO -262) POWE R
PACKAGE IN TU BE (SUFFIX "-1")
■ SURFACE-MOUNTING D2PACK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX)
OR IN TAPE & REEL (SUFFIX "T4")
APPLICATIONS
■ HIGH CURRENT, HIGH SPE ED SWI TCHING
■ SWITCH MODE P OW ER SUP P LY (S MP S)
■ CONSUMER AND INDUSTRIAL LIGHTING
■ DC-AC CONVERTER FOR WELDING
EQUIPMENT AND UNINTERRUPTABLE
POWER SU PP LY (UP S)
3
I2PAK
TO-262
2
1
1
D2PAK
TO-263
INTERNAL SCHEMATIC DIAGRAM
3
ABSOL UT E MAXIMU M RATINGS
Symbol Parameter Value Unit
V
V
V
I
DM
P
T
(•) Pulse width limited by safe operating area
March 1996
Drain-source Voltage (VGS = 0) 250 V
DS
Drain- gate Voltage (RGS = 20 kΩ) 250 V
DGR
Gate-source Voltage ± 20 V
GS
I
Drain Current (continuous) at Tc = 25 oC15A
D
I
Drain Current (continuous) at Tc = 100 oC10A
D
(•) Drain Current (pulsed) 60 A
Total Dissipation at Tc = 25 oC 125 W
tot
Derating Factor 1 W/
Storage Temperature -65 to 150
stg
T
Max. Operating Junction Temperature 150
j
o
C
o
C
o
C
1/6
Page 2
STB15N25
THERMAL DATA
R
thj-case
R
thj-amb
R
thj-amb
T
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
l
AVALANCHE CHARACTERI S TICS
Symbol Parameter Max Value Unit
I
AR
E
E
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
AS
(starting T
Repetitive Avalanche Energy
AR
= 25 oC, ID = IAR, V
j
(pulse width limited by T
max, δ < 1%)
j
DD
max, δ < 1%)
j
Avalanche Current, Repetitive or Not-Repetitive
(T
= 100 oC, pulse width limited by Tj max, δ < 1%)
c
= 25 V)
1
62.5
0.5
300
15 A
40 mJ
10 mJ
10 A
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID = 250 µA V
= 0 250 V
GS
Breakdown Voltage
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
= Max Rating
V
DS
V
= Max Rating x 0.8 Tc = 125 oC
DS
= ± 20 V ±100 nA
V
GS
250
1000µAµA
ON (∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
I
D(on)
Gate Threshold Voltage V
Static Drain-source On
Resistance
= VGS ID = 250 µA 234V
DS
VGS = 10 V ID = 7.5 A
V
= 10 V ID = 7.5 A Tc = 100oC
GS
On State Drain Current VDS > I
V
= 10 V
GS
D(on)
x R
DS(on)max
0.25
0.5
15 A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
(∗) Forward
fs
Transconductance
C
C
C
Input Capacitance
iss
Output Capacitance
oss
Reverse Transfer
rss
Capacitance
VDS > I
V
DS
x R
D(on)
DS(on)max
= 25 V f = 1 MHz V
ID = 7.5 A 5 S
= 0 1600
GS
270
50
Ω
Ω
pF
pF
pF
2/6
Page 3
STB15N25
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING O N
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
(di/dt)
Q
Q
Q
SWITCHING O F F
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
t
SOURCE DRAIN DIO DE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Turn-on Time
Rise Time
t
r
Turn-on Current Slope V
on
Total Gate Charge
g
Gate-Source Charge
gs
Gate-Drain Charge
gd
Off-voltage Rise Time
Fall Time
t
f
Cross-over Time
c
Source-drain Current
(•)
Source-drain Current
V
= 100 V ID = 15 A
DD
R
= 9.1 Ω VGS = 10 V
G
= 160 V ID = 15 A
DD
R
= 9.1 Ω VGS = 10 V
G
V
= 160 V ID = 15 A V
DD
V
= 160 V ID = 15 A
DD
R
= 9.1 Ω VGS = 10 V
G
GS
20
75
470 A/µs
= 10 V 60
10
25
35
30
70
15
60
(pulsed)
(∗) Forward On Voltage ISD = 15 A VGS = 0 1.5 V
Reverse Recovery
rr
Time
Reverse Recovery
rr
I
= 15 A di/dt = 100 A/µs
SD
V
= 100 V Tj = 150 oC
R
290
3
Charge
Reverse Recovery
21
Current
ns
ns
nC
nC
nC
ns
ns
ns
A
A
ns
µC
A
3/6
Page 4
STB15N25
TO-262 (I2PAK) MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.3 4.6 0.169 0.181
A1 2.49 2.69 0.098 0.106
B 0.7 0.93 0.027 0.036
B1 1.2 1.38 0.047 0.054
B2 1.25 1.4 0.049 0.055
C 0.45 0.6 0.017 0.023
C2 1.21 1.36 0.047 0.053
D 9 9.35 0.354 0.368
e 2.44 2.64 0.096 0.104
E 10 10.28 0.393 0.404
L 13.2 13.5 0.519 0.531
L1 3.48 3.78 0.137 0.149
L2 1.27 1.37 0.050 0.054
mm inch
4/6
C
A
A1
C2
B2
B
e
E
L1
L2
D
L
Page 5
TO-263 (D2PAK) MECHANICAL DATA
STB15N25
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.3 4.6 0.169 0.181
A1 2.49 2.69 0.098 0.106
B 0.7 0.93 0.027 0.036
B2 1.25 1.4 0.049 0.055
C 0.45 0.6 0.017 0.023
C2 1.21 1.36 0.047 0.053
D 9 9.35 0.354 0.368
E 10 10.28 0.393 0.404
G 4.88 5.28 0.192 0.208
L 15 15.85 0.590 0.624
L2 1.27 1.37 0.050 0.054
L3 1.4 1.75 0.055 0.068
mm inch
E
A
C2
L2
D
L
L3
B2
B
A1
C
G
5/6
Page 6
STB15N25
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of pat e nts or ot her rights o f third partie s which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SG S-THOMSON Microelectroni cs. Specifications ment ioned
in this publication are subject to cha nge wi t hout n o tice. This p u bli ca t ion sup e rsed e s and r epla ces al l inf ormat i on pr ev io us ly supplied.
SGS-THOMSON Microelectronics products are not auth orized for use as critical components in life support devices or systems without express
written approval of SGS-THOM SO N M icroelecto nics.
© 1995 SGS-THOMSON Microelectronics - All Rights Reserved
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Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
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. . .
6/6
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