Datasheet STW14NK50Z, STP14NK50Z, STP14NK50ZFP, STB14NK50Z Datasheet (SGS Thomson Microelectronics)

STP14NK50Z, STP14NK50ZFP

STB14NK50Z, STB14NK50Z-1, STW14NK50Z

N-CHANNEL500V-0.34Ω-14ATO-220/FP/D2PAK/I2PAK/TO-247

Zener-Protected SuperMESH™Power MOSFET

TYPE V

STP14NK50Z
STP14NK50ZFP
STB14NK50Z
STB14NK50Z-1
STW14NK50Z

■ TYPICAL R

■ EXTREMELY HIGHdv/dt CAPABILITY

■ 100% AVALANCHE TESTED

■ GATE CHARGE MINIMIZED

■ VERY LOW INTRINSICCAPACITANCES

■ VERY GOOD MANUFACTURING

500 V
500 V
500 V
500 V
500 V

(on) = 0.34 Ω

DS

DSS

R

DS(on)

< 0.38 Ω
< 0.38 Ω
< 0.38 Ω
< 0.38 Ω
< 0.38 Ω

I

D

14 A
14 A
14 A
14 A
14 A

Pw

150 W

35 W
150 W
150 W
150 W

REPEATIBILITY

DESCRIPTION

The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established strip­based PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special careis tak­en to ensure a very good dv/dt capability for the
most demanding applicat ions. Such series comple­ments S T full range of high voltage MOSFETs in­cluding revolutionary MDm es h™ products.

TO-220

1

2

TO-220FP

3

TO-247

3

2

1

I2PAK

D2PAK

INTERNAL SCHEMATIC DIAGRAM

3

2

1

3

1

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ IDEAL FOR OFF-LINE POWER SUPPLIES,

ADAPTORS AND PFC

■ LIGHTING

ORDERING INFORMATION

SALES TYPE MARKING PACKAGE PACKAGING

STP14NK50Z P14NK50Z TO-220 TUBE

STP14NK50ZFP P14NK50ZFP TO-220FP TUBE
STB14NK50ZT4 B14NK50Z

STB14NK50Z-1

B14NK50Z

STW14NK50Z W14NK50Z TO-247 TUBE

2

PAK

D

2

I

PAK

TAPE & REEL

TUBE

1/14March 2003

STP14NK50Z, STP14N K 50ZFP, STB14NK 50Z, STB14NK50Z-1, STW14NK50Z

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

STP14NK50Z

STB14NK50Z/-1

I

V

DM

P

V

DGR

V

I
I

TOT

DS

GS
D
D

Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)
Gate- source Voltage ± 30 V
Drain Current (continuous) at TC= 25°C
Drain Current (continuous) at TC= 100°C

()

Drain Current (pulsed) 48 48 (*) 48 A
Total Dissipation at TC= 25°C

14 14 (*) 14 A

7.6 7.6 (*) 7.6 A

150 35 150 W

Derating Factor 1.20 0.28 1.20 W/°C

V

ESD(G-S)

Gate source ESD(HBM-C=100pF, R=1.5KΩ) 4000 V

dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns

V

ISO

T

j

T

stg

() Pulse width limited by safe operating area

≤14A, di/dt ≤200A/µs, VDD≤ V

(1) I

SD

(*) Limited only by maximum temperature allowed

Insulation Withstand Voltage (DC) - 2500 - V
Operating Junction Temperature

Storage Temperature

(BR)DSS,Tj≤TJMAX.

STP14NK50ZFP STW14NK50Z

500 V
500 V

-55 to 150 °C

THERMAL DATA

TO-220

2

PAK

I

Rthj-case Thermal Resistance Junction-case Max 0.83 3.6 0.83 °C/W

Rthj-pcb Thermal Resistance Junction-pcb Max (#) 60 °C/W

Rthj-amb Thermal Resistance Junction-ambient Max 62.5 50 °C/W

T

l

Maximum Lead Temperature For Soldering Purpose

2

D

TO-220FP TO-247

PAK

300 °C

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Unit

I

AR

E

AS

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T

max)

j

Single Pulse Avalanche Energy
(starting T

= 25 °C, ID=IAR,VDD=50V)

j

12 A

400 mJ

GATE-SOURCE ZENER DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

BV

GSO

Gate-Source Breakdown

Igs=± 1mA (Open Drain) 30 V

Voltage

(#) When mounted on minimum Footprint

PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the 30V Zener voltage is appropriate to achieve an efficient
and cost-effective intervention to protect the device’s integrity. These in tegrated Zener diodes thus avoid
the usage of external components.

2/14

STP14NK50Z, STP14N K 50ZFP, STB14NK50 Z, STB14NK50Z-1, STW14NK50Z

ELECTRICAL CHARACTERISTICS (T

=25°C UNLESS OTHERWISE SP ECIFIED)

CASE

ON/OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

Drain-source

ID= 1mA, VGS= 0 500 V

Breakdown Voltage

I

I

GSS

V

GS(th)

R

DS(on)

DSS

Zero Gate Voltage
Drain Current (V

GS

=0)

Gate-body Leakage
Current (V

DS

=0)
Gate Threshold Voltage
Static Drain-source On

V

= Max Rating

DS

VDS= Max Rating, TC= 125 °C
V

= ± 20V ±10 µA

GS

V

DS=VGS,ID

= 100 µA

3 3.75 4.5 V

1

50

VGS=10V,ID= 6 A 0.34 0.38 Ω

Resistance

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(1) Forward Transconductance VDS=8V,ID=6A 12 S

g

fs

C

oss eq.

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance

(3) Equivalent Output

=25V,f=1MHz,VGS= 0 2000

V

DS

238

55

VGS=0V,VDS= 0V to 400V 150 pF

Capacitance

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

Q
Q
Q

Turn-on Delay Time

t

r

g
gs
gd

Rise Time

Total Gate Charge
Gate-Source Charge
Gate-Drain Charge

VDD=250V,ID=6A
RG= 4.7Ω VGS=10V
(Resistive Load see, Figure 3)

=400V,ID=12A,

V

DD

V

=10V

GS

24
16

69
12
31

92

µA
µA

pF
pF
pF

ns
ns

nC
nC
nC

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(off)

Turn-off Delay Time

t

f

Fall Time

VDD= 250 V, ID=6A
R

=4.7ΩVGS=10V

G

54
12

(Resistive Load see, Figure 3)

t

r(Voff)

t

f

t

c

Fall Time
Cross-over Time

Off-voltage Rise Time

= 400V, ID=12A,

V

DD

RG=4.7Ω, VGS= 10V
(Inductive Load see, Figure 5)

9.5
9

20

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

VSD(1)

t

rr

Q

rr

I

RRM

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

3. C

Source-drain Current

(2)

Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time

Reverse Recovery Charge
Reverse Recovery Current

is defined as a constant equivalent capacitance giving the same charging time as C

oss eq.

.

V

DSS

ISD=12A,VGS=0
I

SD

VDD=35V,Tj= 150°C
(see test circuit, Figure 5)

= 12 A, di/dt = 100A/µs

470

3.1

13.2

when VDSincreases from 0 to 80%

oss

12
48

1.6 V

ns
ns

ns
ns
ns

A
A

ns

µC

A

3/14

STP14NK50Z, STP14N K 50ZFP, STB14NK 50Z, STB14NK50Z-1, STW14NK50Z

Safe Operating Area For TO-220/D2PAK/I2PAK

Safe Operating Area For TO-220FP

Thermal Impedance For TO-220/D2PAK/I2PAK

Thermal Impedance For TO-220FP

4/14

Thermal Impedance For TO-247Safe Operating Area For TO-247

STP14NK50Z, STP14N K 50ZFP, STB14NK50 Z, STB14NK50Z-1, STW14NK50Z

Output Characteristics

Transconductance

Transfer Characteristics

Static Drain-source O n Resistance

Gate Charge vs Gate-so urce Voltage Capacitance Variations

5/14

STP14NK50Z, STP14N K 50ZFP, STB14NK 50Z, STB14NK50Z-1, STW14NK50Z

Normalized On Resistance vs Tem peratureNormalized Gate Threshold Voltage vs Temp.

Source-drain Diode Forward Characteristics

Normalized BVgso vs Temperature

Normalized BVDSS vs Temperature

Maximum Avalanche Energy vs Temperature

6/14

STP14NK50Z, STP14N K 50ZFP, STB14NK50 Z, STB14NK50Z-1, STW14NK50Z

Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit

Fig. 3: Switching Times Test Circuit For

Resistive Load

Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery T imes

Fig. 4: Gate Charge tes t Circuit

7/14

STP14NK50Z, STP14N K 50ZFP, STB14NK 50Z, STB14NK50Z-1, STW14NK50Z

E

P011C

TO-220 MECHANICAL DATA

DIM.

A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107

D1 1.27 0.050

E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067

G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154

DIA. 3.75 3.85 0.147 0.151

MIN. TYP. MAX. MIN. TYP. MAX.

mm inch

A

C

D

8/14

L5

Dia.

L7

D1

L6

L2

L9

F1

G1

F

H2

G

F2

L4

STP14NK50Z, STP14N K 50ZFP, STB14NK50 Z, STB14NK50Z-1, STW14NK50Z

TO-220FP MECHANICAL DATA

DIM.

A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027

F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067

G 4.95 5.2 0.195 0.204

G1 2.4 2.7 0.094 0.106

H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 .0385 0.417
L5 2.9 3.6 0.114 0.141
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366

Ø 3 3.2 0.118 0.126

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

E

A

D

B

L3

L6

L7

¯

F1

F

G1

H

G

F2

123

L2

L5

L4

9/14

STP14NK50Z, STP14N K 50ZFP, STB14NK 50Z, STB14NK50Z-1, STW14NK50Z

D2PAK MECHANICAL DATA

DIM.

MIN. TYP MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181
A1 2.49 2.69 0.098 0.106
A2 0.03 0.23 0.001 0.009

B 0.7 0.93 0.027 0.036
B2 1.14 1.7 0.044 0.067

C 0.45 0.6 0.017 0.023

C2 1.23 1.36 0.048 0.053

D 8.95 9.35 0.352 0.368

D1 8 0.315

E 10 10.4 0.393
E1 8.5 0.334

G 4.88 5.28 0.192 0.208

L 15 15.85 0.590 0.625
L2 1.27 1.4 0.050 0.055
L3 1.4 1.75 0.055 0.068

mm. inch

M 2.4 3.2 0.094 0.126

R 0.4 0.015
V2 0º 8º

3

10/14

1

STP14NK50Z, STP14N K 50ZFP, STB14NK50 Z, STB14NK50Z-1, STW14NK50Z

P011P5/E

TO-262 (I2PAK) MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181

A1 2.49 2.69 0.098 0.106

B 0.7 0.93 0.027 0.036

B2 1.14 1.7 0.044 0.067

C 0.45 0.6 0.017 0.023

C2 1.23 1.36 0.048 0.053

D 8.95 9.35 0.352 0.368

e 2.4 2.7 0.094 0.106

E 10 10.4 0.393 0.409

L 13.1 13.6 0.515 0.531
L1 3.48 3.78 0.137 0.149
L2 1.27 1.4 0.050 0.055

mm inch

C

A

A1

C2

B2

B

e

E

L1

L2

D

L

11/14

STP14NK50Z, STP14N K 50ZFP, STB14NK 50Z, STB14NK50Z-1, STW14NK50Z

TO-247 MECHANICAL DATA

DIM.

A 4.85 5.15 0.19 0.20
D 2.20 2.60 0.08 0.10
E 0.40 0.80 0.015 0.03

F 1 1.40 0.04 0.05
F1 3 0.11
F2 2 0.07
F3 2 2.40 0.07 0.09
F4 3 3.40 0.11 0.13

G 10.90 0.43
H 15.45 15.75 0.60 0.62

L 19.85 20.15 0.78 0.79
L1 3.70 4.30 0.14 0.17
L2 18.50 0.72
L3 14.20 14.80 0.56 0.58
L4 34.60 1.36
L5 5.50 0.21

M 2 3 0.07 0.11

V

V2

Dia 3.55 3.65 0.14 0.143

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

5º 5º

60º 60º

12/14

STP14NK50Z, STP14N K 50ZFP, STB14NK50 Z, STB14NK50Z-1, STW14NK50Z

D2PAK FOOTPRINT

TUBE SHIPMENT (no suffix)*

TAPE AND REEL SHIPMENT (suffix ”T4”)*

REEL MECHANICAL DATA

TAPE MECHANICAL DATA

DIM.

A0 10.5 10.7 0.413 0.421
B0 15.7 15 .9 0.618 0.626

D 1.5 1.6 0.059 0.063

D1 1.59 1.61 0.062 0.063

E 1.65 1.85 0.065 0.073

F 11.4 11.6 0.449 0.456
K0 4.8 5. 0 0.189 0.197
P0 3.9 4.1 0.153 0.161
P1 11.9 12.1 0.468 0.476
P2 1.9 2.1 0.075 0.082

R 50 1. 574

T 0.25 0.35 0.0098 0.0137

W 23.7 24.3 0.933 0.956

mm inch

MIN. MAX. MIN. MAX.

DIM.

A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0795
G 24.4 26.4 0.960 1.039
N 100 3.937
T 30.4 1.197

BASE QTY BULK QTY

mm inch

MIN. MAX. MIN. MAX.

1000 1000

* on sales ty pe

13/14

STP14NK50Z, STP14N K 50ZFP, STB14NK 50Z, STB14NK50Z-1, STW14NK50Z

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of u se of such inf ormat ion nor for any in fring ement of p aten ts or othe r ri ghts of th ird p arties whic h may resul t f rom
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mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
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systems without express written approval of STMicroelectronics.

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