Page 1
N-CHANNEL 75V - 0.0065 Ω -120A D²PAK/I²PAK/TO-220
TYPE
STB140NF75
STP140NF75
STB140NF75-1
■ TYPICAL R
■ SURFACE-MOUNTING D
V
DSS
75 V
75 V
75 V
(on) = 0.0065 Ω
DS
POWER PACKAGE
DESCRIPTION
This Power MOSFET is the latest dev elo pment of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low onresistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
APPLICATIONS
■ HIGH CURRENT, HIGH SWITCHING SPEED
■ SOLENOID AND RELAY DRIVERS
■ AUTOMOTIVE 42V BATTERY DRIVERS
R
DS(on)
<0.0075
<0.0075
<0.0075
Ω
Ω
Ω
²
PAK (TO-263)
I
D
120 A(**)
120 A(**)
120 A(**)
STB140NF75 STP140NF75
STB140NF75-1
STripFET™ II POWER MOSFET
AUTOMOTIVE SPECIFIC
3
1
D2PAK
TO-263
(Suffix “T4”)
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
I2PAK
TO-262
3
2
1
Ordering Information
STB140NF75T4 B140NF75
SALES TYPE MARKING PACKAGE PACKAGING
STP140NF75 P140NF75 TO-220 TUBE
STB140NF75-1 B140NF75
2
D
PAK
2
I
PAK
T APE & REEL
TUBE
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
(**) Drain Current (continuous) at T
I
D
I
D
(
I
DM
P
tot
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
75 V
75 V
Gate- source Voltage ± 20 V
= 25°C
C
Drain Current (continuous) at TC = 100°C
•)
Drain Current (pulsed) 480 A
Total Dissipation at TC = 25°C
120 A
100 A
310 W
Derating Factor 2.08 W/°C
(1)
dv/dt
E
AS
T
stg
T
j
Pulse widt h l i m i ted by safe op erating area.
(
•)
(**) Curre nt Limited by Pac kage
Peak Diode Recovery voltage slope 10 V/ns
(2)
Single Pulse Avalanche Energy 750 mJ
Storage Temperature
Operating Junction Temperature
(1) ISD ≤120A, di/dt ≤400A/µs, VDD ≤ V
(2) Starting Tj = 25 oC, ID = 60 A, VDD = 30V
-55 to 175 °C
(BR)DSS
, Tj ≤ T
December 2002
JMAX
1/14
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STB140NF75 STP140NF75 STB150NF75-1
THERMA L D ATA
Rthj-case Thermal Resistance Junction-case Max 0.48 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
Rthj-pcb Thermal Resistance Junction-pcb Max see curve on page 6 °C/W
T
Maximum Lead Temperature For Soldering Purpose
l
(for 10 sec. 1.6 mm from case)
300 °C
ELECTRICAL CHARACTERISTICS (T
= 25 °C unless otherwise specified)
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
V
(BR)DSS
Drain-source
= 250 µA VGS = 0
D
75 V
Breakdown Voltage
V
= Max Rating
DS
V
= Max Rating TC = 125°C
DS
V
= ± 20 V
GS
1
10
±100 nA
ON
(*)
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-source On
= VGS I
DS
V
= 10 V ID = 70 A
GS
= 250 µA
D
24V
0.0065 0.0075
V
Resistance
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(*)
g
fs
C
iss
C
oss
C
rss
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
15 V ID= 70 A
DS =
= 25V, f = 1 MHz, VGS = 0
V
DS
160 S
5000
960
310
µA
µA
Ω
pF
pF
pF
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Page 3
STB140NF75 STP140NF75 S TB150N F75-1
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
= 38 V ID = 70 A
t
d(on)
Turn-on Delay Time
t
r
Rise Time
V
DD
R
= 4.7 Ω VGS = 10 V
G
(Resistive Load, Figure 3)
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD=60 V ID=120A VGS= 10V
(see test circuit, Figure 4)
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
= 38 V ID = 70 A
t
d(off)
Turn-off Delay Time
t
f
Fall Time
V
DD
R
= 4.7Ω, V
G
GS
= 10 V
(Resistive Load, Figure 3)
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
rr
Q
rr
I
RRM
(*)
Pulsed: P ul se duration = 300 µs, duty cycle 1.5 %.
(
•)Pulse width limited by s af e operatin g area.
Source-drain Current
(•)
Source-drain Current (pulsed)
(*)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
= 120 A VGS = 0
SD
= 120 A di/dt = 100A/µs
I
SD
V
= 35 V Tj = 150°C
DD
(see test circuit, Figure 5)
30
140
160
28
70
130
90
115
450
8
218 nC
120
480
1.5 V
ns
ns
nC
nC
ns
ns
A
A
ns
nC
A
Thermal ImpedanceSafe Operating Area
3/14
Page 4
STB140NF75 STP140NF75 STB150NF75-1
Output Characteristics Transfer Characteristics
Transconductance Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage Capacitance Variations
4/14
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STB140NF75 STP140NF75 S TB150N F75-1
Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics Normalized Breakdown Voltage vs Temperature.
. .
Power Derating vs Tc Max Id Current vs Tc.
5/14
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STB140NF75 STP140NF75 STB150NF75-1
Thermal Resistance Rthj-a vs PCB Copper Area Max Power Dissipation vs PCB Copper Area
Allowable Iav vs. Time in Avalanche
The previous curve gives the safe operating area for unclamped inductive loads, single pulse or repetitive,
under the following conditions:
P
E
= 0.5 * (1.3 * BV
D(AVE)
= P
AS(AR)
D(AVE)
* t
AV
DSS
* IAV)
Where:
I
is the Allowable Current in Avalanche
AV
P
t
AV
To derate above 25
is the Average Power Dissipation in Avalanche (Single Pulse)
D(AVE)
is the Time in Avalanche
o
C, at fixed IAV, the following equation must be applied:
= 2 * (T
I
AV
jmax
- T
CASE
)/ (1.3 * BV
DSS
* Zth)
Where:
Z
= K * Rth is the value coming from Normalized Thermal Response at fixed pulse width equal to TAV .
th
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STB140NF75 STP140NF75 S TB150N F75-1
SPICE THERMAL MODEL
Parameter
CTHERM1 7 - 6
CTHERM2 6 - 5
CTHERM3 5 - 4
CTHERM4 4 - 3
CTHERM5 3 - 2
CTHERM6 2 - 1
Node
Value
1.49 * 10
3.50 * 10
5.94 * 10
9.74 * 10
8.86 * 10
8.27 * 10
RTHERM1 7 - 6 0.0384
RTHERM2 6 - 5 0.0624
RTHERM3 5 - 4 0.072
RTHERM4 4 - 3 0.0912
RTHERM5 3 - 2 0.1008
RTHERM6 2 - 1 0.1152
-3
-2
-2
-2
-2
-1
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STB140NF75 STP140NF75 STB150NF75-1
Fig. 1: Unclamped Inductive Load Test CircuitFig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For Resistive
Load
Fig. 4: Gate Charge Test Circuit
Fig. 3.1: Switching Time Waveform
Fig. 4.1: Gate Charge Test Waveform
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STB140NF75 STP140NF75 S TB150N F75-1
Fig. 5: Diode Switching Test Circuit Fig. 5.1: Diode Recovery Times Waveform
9/14
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STB140NF75 STP140NF75 STB150NF75-1
D²PAK MECHANICAL DATA
DIM.
A 4.4 4.6 0.173 0.181
A1 2.49 2.69 0.098
A2 0.03 0.23 0.001 0.009
B 0.7 0.93 0.028 0.037
B2 1.14 1.7 0.045 0.067
C 0.45 0.6 0.018 0.024
C2 1.21 1.36 0.048 0.054
D 8.95 9.35 0.352 0.368
D1 8 0.315
E 10 10.4 0.394 0.409
E1 8.5 0.334
G 4.88 5.28 0.192 0.208
L 15 15.85 0.591 0.624
L2 1.27 1.4 0.050 0.055
L3 1.4 1.75 0.055 0.069
M 2.4 3.2 0.094 0.126
R 0.4 0.015
V2 0° 8° 0° 8°
MIN. TYP. MAX. MIN. TYP. TYP.
mm. inch.
0.106
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STB140NF75 STP140NF75 S TB150N F75-1
TO-262 (I2PAK) MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
A1 2.49 2.69 0.098 0.106
B 0.7 0.93 0.027 0.036
B2 1.14 1.7 0.044 0.067
C 0.45 0.6 0.017 0.023
C2 1.23 1.36 0.048 0.053
D 8.95 9.35 0.352 0.368
e 2.4 2.7 0.094 0.106
E 10 10.4 0.393 0.409
L 13.1 13.6 0.515 0.531
L1 3.48 3.78 0.137 0.149
L2 1.27 1.4 0.050 0.055
mm inch
C
A
A1
C2
B2
B
e
E
L1
L2
D
L
P011P5/E
11/14
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STB140NF75 STP140NF75 STB150NF75-1
TO-220 MECHANICAL DATA
DIM.
A 4.4 4.6 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.40 2.70 0.094 0.106
H2 10 10.40 0.393 0.409
L2 16.40 0.645
L3 28.90 1.137
L4 13 14 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.20 6.60 0.244 0.260
L9 3.50 3.93 0.137 0.154
DIA 3.75 3.85 0.147 0.151
MIN. TYP. MAX. MIN. TYP. TYP.
mm. inch.
12/14
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STB140NF75 STP140NF75 S TB150N F75-1
D2PAK FOOTPRINT
TAPE AND REEL SHIPMENT (suffix ”T4”)*
TUBE SHIPMENT (no suffix)*
REEL MECHANICAL DATA
DIM.
A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0.795
G 24.4 26.4 0.960 1.039
N 100 3.937
T 30.4 1.197
mm inch
MIN. MAX. MIN. MAX.
TAPE MECHANICAL DATA
DIM.
A0 10.5 10.7 0.413 0.421
B0 15.7 15.9 0.618 0.626
D 1.5 1.6 0.059 0.063
D1 1.59 1.61 0.062 0.063
E 1.65 1.85 0.065 0.073
F 11.4 11.6 0.449 0.456
K0 4.8 5.0 0.189 0.197
P0 3.9 4.1 0.153 0.161
P1 11.9 12.1 0.468 0.476
P2 1.9 2.1 0075 0.082
R50 1.574
T0.25 0.35 .0.0098 0.0137
W 23.7 24.3 0.933 0.956
mm inch
MIN. MAX. MIN. MAX.
* on sales type
BASE QTY BULK QTY
1000 1000
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STB140NF75 STP140NF75 STB150NF75-1
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implic ation or otherwise under any patent or p atent rights of STMi croelectr oni cs. Spec i fications mentioned i n this publicatio n are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as cri tical comp onents in life support dev i ces or systems wi t hout expres s written approval of STMi croelectr o nics.
The ST logo is registered trademark of STMicroelectronics
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