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查询STB140NF55供应商
N-CHANNEL 55V - 0.0065 Ω - 80A TO-220/D²PAK
TYPE
STB140NF55
STP140NF55
■ TYPICAL R
V
DSS
55 V
55 V
(on) = 0.0065 Ω
DS
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high p acking density for low onresistance, rugged ava lanche characteristics and
less critical alignment steps therefore a remarkable manufacturing reproducibility.
R
DS(on)
< 0.008 Ω
< 0.008 Ω
I
D
80 A
80 A
STB140NF55
STP140NF55
STripFET™ II POWER MOSFET
Figure 1:PackageTable 1: General Features
1
D2PAK
TO-263
(Suffix “T4”)
TO-220
2
APPLICATIONS
■ MOTOR CONTROL
■ HIGH CURRENT, SWITCHING
Figure 2: Internal Schematic Diagram
APPLICATIONS
■ AUTOMOTIVE ENVIRONMENT
Table 2: Order Codes
STB140NF55T4
STP140NF55
Part Number MARKING PACKAGE PACKAGING
B140NF55
P140NF55
D²PAK
TO-220
TAPE & REEL
TUBE
Table 3:ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
GS
I
D
I
D
I
(•)
DM
P
tot
dv/dt
E
AS
T
stg
T
j
(•) Pulse width limited by safe operating area.
(**) Current Limited by Package
Drain-source Voltage (VGS = 0)
55 V
Gate- source Voltage ± 20 V
Drain Current (conti nuo us ) at TC = 25°C
Drain Current (conti nuo us ) at TC = 100°C
80 A
80 A
Drain Current (pulse d) 320 A
Total Dissipation at TC = 25°C
300 W
Derating Factor 2 W/°C
(1)
Peak Diode Recove ry vo ltag e slo pe 10 V/ns
(2)
Single Pulse Avalanche Energy 1.3 mJ
Storage Temperature
Operating Junction Temperature
(1) ISD ≤80A, di/dt ≤300A/µs, VDD ≤ V
(2) Starting Tj = 25 oC, ID = 40A, VDD = 30V
-55 to 175 °C
(BR)DSS
, Tj ≤ T
JMAX
Rev. 2
1/11December 2004
Page 2
STB140NF55 STP140NF55
Table 4: THERMAL DATA
Rthj-case
Rthj-amb
T
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
l
Max
Max
0.5
62.5
300
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS (T
= 25 °C unless otherwise specified)
case
Table 5: OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
I
= 250 µA, VGS = 0
D
55 V
Breakdown Voltage
= Max Rating
I
DSS
I
GSS
Table 6: ON
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
(*)
DS
= 0)
GS
= 0)
V
DS
= Max Rating TC = 125°C
V
DS
= ± 20 V
V
GS
1
10
±100 nA
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-source On
V
= VGS ID = 250 µA
DS
V
= 10 V ID = 40 A
GS
234V
0.0065 0.008 Ω
Resistance
Table 7: DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(*)
g
fs
C
iss
C
oss
C
rss
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
25 V ID=40 A
DS =
V
= 25V f = 1 MHz VGS = 0
DS
100 S
5300
1000
290
µA
µA
pF
pF
pF
2/11
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STB140NF55 STP140NF55
ELECTRICAL CHARACTERISTICS (continued)
Table 8: SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
Q
Q
Q
t
r
g
gs
gd
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charg e
Gate-Drain Charge
Table 9: SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
t
f
Turn-off Delay Time
Fall Time
Table 10: SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
rr
Q
rr
I
RRM
(*)
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(
•)Pulse width limited by safe operating area.
Source-drain Curre nt
)
Source-drain Curre nt (pu lse d)
(•
(*)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
= 27.5 V ID = 40 A
V
DD
=4.7 Ω VGS = 10 V
R
G
(Resistive Load, Figu re 3)
V
= 44V ID= 80A VGS= 10V
DD
V
= 27.5 V ID = 40 A
DD
=4.7 Ω VGS = 10 V
R
G
(Resistive Load, Figu re 3)
I
= 80 A VGS = 0
SD
I
= 80 A di/dt = 100A/µs
SD
= 20 V Tj = 150°C
V
DD
(see test circuit, Figure 5)
30
150
142
27
55
125
45
80
320
1.5 V
90
275
6.5
ns
ns
nC
nC
nC
ns
ns
A
A
ns
µC
A
Figure 3: Safe Operating Area
Figure 4: Therm al Im pe da nce
3/11
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STB140NF55 STP140NF55
Figure 5: Output Characteristics Figure 6: Transfer Char ac ter ist ics
Figure 7: Transconductance Figure 8: Static Drain-source On Resistance
Figure 9: Gate Charge vs Gate-source Voltage Figure 10: Capacitance Variations
4/11
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STB140NF55 STP140NF55
.
Figure 11: Normalized Gate Threshold Voltage vs
Temperature
Figure 13: Source-drain Diode Forward
Characteristics
Figure 12: Normalized on Resist an c e vs Te mpe r at ur e
Figure 14: Normalized Breakdown Voltage vs
Temperature.
.
.
.
5/11
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STB140NF55 STP140NF55
Figure 15: Unclamped Inductive Load Test Cir-
Figure 17: Switching Times Test Circuits For Resis-
cuit
tive Load
Figure 16: Unclamped Inductive Waveform
Figure 18: Gate Charge test Circuit
Figure 19: Test C ircuit For In ductive Lo ad Switchin g
And Diode Recovery Time
6/11
s
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TO-220 MECHANICAL DATA
STB140NF55 STP140NF55
DIM.
A 4.4 4.6 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.40 2.70 0.094 0.106
H2 10 10.40 0.393 0.409
L2 16.40 0.645
L3 28.90 1.137
L4 13 14 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.20 6.60 0.244 0.260
L9 3.50 3.93 0.137 0.154
DIA 3.75 3.85 0.147 0.151
MIN. TYP. MAX. MIN. TYP. TYP.
mm. inch.
7/11
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STB140NF55 STP140NF55
D2PAK MECHANICAL DATA
DIM.
A 4.4 4.6 0.173 0.181
A1 2.49 2.69 0.098
A2 0.03 0.23 0.001 0.009
B 0.7 0.93 0.028 0.037
B2 1.14 1.7 0.045 0.067
C 0.45 0.6 0.018 0.024
C2 1.21 1.36 0.048 0.054
D 8.95 9.35 0.352 0.368
D1 8 0.315
E 10 10.4 0.394 0.409
E1 8.5 0.334
G 4.88 5.28 0.192 0.208
L 15 15.85 0.591 0.624
L2 1.27 1.4 0.050 0.055
L3 1.4 1.75 0.055 0.069
M 2.4 3.2 0.094 0.126
R 0.4 0.015
V2 0° 8° 0° 8°
MIN. TYP. MAX. MIN. TYP. TYP.
mm. inch.
0.106
8/11
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STB140NF55 STP140NF55
D2PAK FOOTPRINT
TAPE AND REEL SHIPMENT (suffix ”T4”)*
TUBE SHIPMENT (no suffix)*
REEL MECHANICAL DATA
DIM.
A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0.795
G 24.4 26.4 0.960 1.039
N 100 3.937
T 30.4 1.197
mm inch
MIN. MAX. MIN. MAX.
TAPE MECHANICAL DATA
DIM.
A0 10.5 10.7 0.413 0.421
B0 15.7 15.9 0.618 0.626
D 1.5 1.6 0.059 0.063
D1 1.59 1.61 0.062 0.063
E 1.65 1.85 0.065 0.073
F 11.4 11.6 0.449 0.456
K0 4.8 5.0 0.189 0.197
P0 3.9 4.1 0.153 0.161
P1 11.9 12.1 0.468 0.476
P2 1.9 2.1 0075 0.082
R 50 1.574
T 0.25 0.35 .0.0098 0.0137
W 23.7 24.3 0.933 0.956
mm inch
MIN. MAX. MIN. MAX.
* on sales type
BASE QTY BULK QTY
1000 1000
9/11
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STB140NF55 STP140NF55
Table 11:Revision History
Date Revision Description of Changes
07-Nov-2004
2 updated fig.14
10/11
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STB140NF55 STP140NF55
I
s
o
d
b
ct
t
ot
a
nformation furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequence
f use of such information nor for any infrin gement of patents or other rights of third parties which may resul t from its use. No license is grante
y implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subje
o change without notic e. This publication supersedes and replaces all information previously supplied. STMicroelec tronics products are n
uthorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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