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查询STB135N10供应商
N-CHANNEL 100V - 0.007 Ω - 135A D²PAK/TO-220
LOW GATE CHARGE STripFET™ POWER MOSFET
STB135N10
STP135N10
TARGET DATA
TYPE
STB135N10
STP135N10
■ TYPICAL R
■ EXCEPTIONA L dv/d t CAPABILITY
■ 100% AVALANCHE TESTED
■ SURFACE-MOUNTING D
V
DSS
100 V
100 V
(on) = 0.007Ω
DS
POWER PACKAG E IN TU BE (NO SU FFIX) OR
IN TAPE & REEL (SUFFIX “T4”)
R
DS(on)
<0.009
Ω
<0.009
Ω
2
PAK (TO-263)
I
D
135 A
135 A
(*)
(*)
3
1
D2PAK
TO-263
(Suffix “T4”)
TO-220
DESCRIPTION
This MOSFET is the result o f STMicroelectronic s’s well
established and consolidated STripFET technology utilizing the most recent layout optimization. The device exhibits extremely low on-resis tance, gate char ge and diode’s
INTERNAL SCHEMATIC DIAGRAM
reverse recovery c harge Qrr ma king it t he idea l switc h in
a very large spectrum of applications such as Automotive,
Consumer, Telecom and Industrial.
APPLICATIONS
■ PRIMARY SWITCH IN TELECOM DC-DC
CONVERTER
■ HIGH-EFFICIENCY DC-DC CONVERTERS
■ 42V AUTOMOTIVE APPLICATIONS
■ SYNCHRONOUS RECTIFICATION
■ DIESEL INJECTION
■ PWM UPS AND MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
(*)
I
D
I
D
(1)
I
DM
P
tot
dv/dt
E
AS
T
stg
T
(1)
(*)
j
Pulse w i dt h l i mited by safe operating area.
Value limited by wi re bonding
July 2003
This is preliminary information on a new product forseen to be developped. Details are subject to change without notice
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
100 V
100 V
Gate- source Voltage ± 20 V
Drain Current (continuous) at TC = 25°C
Drain Current (continuous) at TC = 100°C
135 A
96 A
Drain Current (pulsed) 540 A
Total Dissipation at TC = 25°C
150 W
Derating Factor 1 W/°C
(2)
Peak Diode Recovery voltage slope TBD V/ns
(3)
Single Pulse Avalanche Energy TBD mJ
Storage Temperature
Operating Junction Temperature
≤ 40A, di/dt ≤ 600A/µs , VDD ≤B
(2) I
SD
(3) Starting Tj = 25 oC, ID = 40A, VDD = 50V
-55 to 175 °C
VDSS
, Tj ≤ T
JMAX.
3
2
1
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STB135N10 STP135N10
THERMA L D ATA
Rthj-case
Rthj-amb
T
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
l
Max
Max
1
62.5
300
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS (T
= 25 °C UNLESS OTHERWISE SPECIFIED)
CASE
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
= 250 µA, VGS = 0
V
(BR)DSS
Drain-source
I
D
100 V
Breakdown Voltage
= Max Rating
V
DS
V
= Max Rating TC = 125°C
DS
V
= ± 20V
GS
1
10
±100 nA
ON
(5)
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-source On
= VGS I
DS
V
= 10 V ID = 67.5 A
GS
= 250 µA
D
24V
0.007 0.009
V
Resistance
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(5)
g
fs
C
iss
C
oss
C
rss
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
25 V
DS =
V
DS
ID
= 25V f = 1 MHz VGS = 0
= 67.5 A
TBD S
6350
890
250
µA
µA
Ω
pF
pF
pF
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STB135N10 STP135N10
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
= 50 V ID = 67.5 A
t
d(on)
Turn-on Delay Time
t
r
Rise Time
V
DD
R
= 4.7 Ω VGS = 10 V
G
(Resistive Load, Figure 3)
Q
Q
gs
Q
gd
Total Gate Charge
g
Gate-Source Charge
Gate-Drain Charge
= 50 V ID= 135 A VGS= 5 V
V
DD
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
= 50 V ID = 67.5 A
t
d(off)
Turn-off Delay Time
t
f
Fall Time
V
DD
R
= 4.7Ω, V
G
GS
= 10 V
(Resistive Load, Figure 3)
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
rr
Q
rr
I
RRM
(1 )
Pulse width limited by safe operating area.
(5)
Pulsed: P ul se duration = 300 µs, duty cycle 1.5 %.
Source-drain Current
(1)
Source-drain Current (pulsed)
(5)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
= 135 A VGS = 0
SD
= 135 A di/dt = 100A/µs
I
SD
V
= 25 V Tj = 150°C
DD
(see test circuit, Figure 5)
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
95 nC
135
540
1.3 V
ns
ns
nC
nC
ns
ns
A
A
ns
µ
A
C
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STB135N10 STP135N10
Fig. 1: Unclamped Inductive Load Test CircuitFig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For Resistive
Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
Fig. 4: Gate Charge test Circuit
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STB135N10 STP135N10
D2PAK MECHANICAL DATA
DIM.
A 4.4 4.6 0.173 0.181
A1 2.49 2.69 0.098
A2 0.03 0.23 0.001 0.009
B 0.7 0.93 0.028 0.037
B2 1.14 1.7 0.045 0.067
C 0.45 0.6 0.018 0.024
C2 1.21 1.36 0.048 0.054
D 8.95 9.35 0.352 0.368
D1 8 0.315
E 10 10.4 0.394 0.409
E1 8.5 0.334
G 4.88 5.28 0.192 0.208
L 15 15.85 0.591 0.624
L2 1.27 1.4 0.050 0.055
L3 1.4 1.75 0.055 0.069
M 2.4 3.2 0.094 0.126
R 0.4 0.015
V2 0° 8° 0° 8°
MIN. TYP. MAX. MIN. TYP. TYP.
mm. inch.
0.106
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STB135N10 STP135N10
TO-220 MECHANICAL DATA
DIM.
A 4.4 4.6 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.40 2.70 0.094 0.106
H2 10 10.40 0.393 0.409
L2 16.40 0.645
L3 28.90 1.137
L4 13 14 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.20 6.60 0.244 0.260
L9 3.50 3.93 0.137 0.154
DIA 3.75 3.85 0.147 0.151
MIN. TYP. MAX. MIN. TYP. TYP.
mm. inch.
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STB135N10 STP135N10
D2PAK FOOTPRINT
TAPE AND REEL SHIPMENT (suffix ”T4”)*
TUBE SHIPMENT (no suffix)*
REEL MECHANICAL DATA
DIM.
A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0.795
G 24.4 26.4 0.960 1.039
N 100 3.937
T 30.4 1.197
mm inch
MIN. MAX. MIN. MAX.
TAPE MECHANICAL DATA
DIM.
A0 10.5 10.7 0.413 0.421
B0 15.7 15.9 0.618 0.626
D 1.5 1.6 0.059 0.063
D1 1.59 1.61 0.062 0.063
E 1.65 1.85 0.065 0.073
F 11.4 11.6 0.449 0.456
K0 4.8 5.0 0.189 0.197
P0 3.9 4.1 0.153 0.161
P1 11.9 12.1 0.468 0.476
P2 1.9 2.1 0075 0.082
R50 1.574
T0.25 0.35 .0.0098 0.0137
W 23.7 24.3 0.933 0.956
mm inch
MIN. MAX. MIN. MAX.
* on sales type
BASE QTY BULK QTY
1000 1000
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STB135N10 STP135N10
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implic ation or otherwise under any patent or p atent rights of STMi croelectr oni cs. Spec i fications mentioned i n this publicatio n are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as cri tical comp onents in life support dev i ces or systems wi t hout expres s written approval of STMi croelectr o nics.
The ST logo is registered trademark of STMicroelectronics
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