Page 1
Features
Obsolete Product(s) - Obsolete Product(s)
■ HIGH VOLTAGE CAPABILITY
■ VERY HIGH SWITCHI NG SPEED
■ TIGHT hfe CONTROL
■ LARGE R.B.S.O .A.
■ FULLY INSULA TED PACKAGE U.L.
COMPLIANT FO R EASY MOUN TING
Applications
ST8812FP
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
■ SWITCH MODE POWER SUPPLIES FOR
CRT TV
Description
The ST8812FP is manuf actured us ing late st Multi
Epitaxial Planar technology with high voltage
capability. It shows wide R.B.S.O.A. and high
switching speed thanks to its Cellular Emitter
structure with planar edge termination and d eep
base diffusion.
TO-220FP
Internal Schematic Diagram
Order codes
Part Number Marking Package Packing
ST8812FP ST8812FP TO-220FP TUBE
rev.1
November 2005 1/10
www.st.com
10
Page 2
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1 Electrical Ratings ST8812FP
1 Electrical Ratings
Table 1. Absolute Maximum Rating
Symbol Parameter Value Unit
V
CBO
V
CEO
V
EBO
I
I
CM
I
P
TOT
V
isol
T
STG
T
Table 2. Thermal Data
Symbol Parameter Value Unit
R
thJ-case
Collector-Base Voltage (IE = 0)
Collector-Emitter Voltage (IB = 0)
Emitte-Base Voltage (IC = 0)
Collector Current 7 A
C
Collector Peak Current (tP < 5ms)
Base Current 4 A
B
Total dissipa tion at Tc = 25°C
Insulation Withst and Voltage (RMS) from All Three Leads to
External Heatsink
Storage Temperature -65 to 150 °C
Max. Operating Junction Temperature 150 °C
J
Thermal Resistance Junction-Case__________________ __Max 3.47 °C/W
1150 V
600 V
15 V
12 A
36 W
1500 V
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Page 3
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ST8812FP 2 Electrical Char acteristics
2 Electrical Characteristics
(T
= 25°C; unless otherwise specified)
CASE
Table 3. Electrical Characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
I
CES
I
EBO
V
CEO(sus)
Note: 1
V
CE(sat)
Note: 1
V
BE(sat)
Note: 1
h
FE
t
t
Collector Cut-off Current
= 0)
(V
BE
Emitter Cut-off Current
= 0)
(I
C
Collector-Emitter
Sustaining Voltage (I
Collector-Em itter Saturation Vo ltage
Base-Emitter Saturation Voltage
DC Current Gain
INDUCTIVE LOAD
Storage Time
s
Fall Time
f
= 0)
B
= 1 150V
CE
V
= 1150V Tc= 125°C
CE
= 14V
V
EB
= 100mA
I
C
= 4A _____ IB = 0.8A
I
C
= 4A ___ __ IB = 1.2A
I
C
= 4A ____ _ IB = 0.8A
I
C
I
= 1A _____ V
C
I
= 5A _____ V
C
= 5A _____ V
I
C
= 4A ____ _ RBB= 0
I
C
= 480V V
V
Clamp
I
= 0.8A _ LC= 220μH
B1
CE
CE
CE
BE(off)
(See Figure 8)
= 5V
= 1V
= 5V
= -5V
1
2
1mA
600 V
3
1.5
1.3 V
25
5
4.5
1
60
9
1.6
120
mA
mA
V
V
μs
ns
Note: 1 Pulsed duration = 300 μs, duty cycle ≤1.5%.
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Page 4
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2 Electrical Characteristics ST8812FP
2.1 Typical characteristicsTest circuit
Figure 1. DC Current Gain Figure 2. DC Current Gain
Figure 3. Collector Emitter Saturation Voltage Figure 4. Base Emitter Saturation Voltage
Figure 5. Inductive Load Storage Time Figure 6. Inductive Load Fall Time
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ST8812FP 2 Electrical Char acteristics
Figure 7. Reverse Biased S.O.A.
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2 Electrical Characteristics ST8812FP
Figure 8. Inductive Load Switching Test Circuit
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Page 7
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ST8812FP 3 Package Mechanical Data
3 Package M echanical Da ta
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second Level Interconnect is marked on the package and on the inner box label, in compliance
with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also
marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are
available at: www.st.com.
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3 Package Mechani cal Data ST8812FP
TO-220FP MECHANICAL DATA
DIM.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 .0385 0.417
L5 2.9 3.6 0.114 0.141
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126
MIN. TYP MAX. MIN. TYP. MAX.
mm. inch
E
A
D
B
L3
L6
L7
1
F
H
L2
L5
F
1
G
G
2
F
123
L4
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ST8812FP 4 Revision History
4 Revision History
Date Revision Changes
17-Nov-2005 1 Initial rele ase.
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4 Revision Hist ory ST8812FP
I
s
o
d
b
ct
t
ot
a
nformation furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequence
f use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is grante
y implic ation or otherwise under any patent or patent ri ghts of STM i croelectr onics. Specifications menti oned in thi s publicati on are subje
o change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are n
uthoriz ed for use as critical compo nents in life support devic es or systems without express writt en approval of STMicroel ectronics.
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