Datasheet ST780C06L0, ST780C04L3L, ST780C04L3, ST780C04L2L, ST780C04L2 Datasheet (International Rectifier)

...
Page 1
D-342
DISCRETE POWER DIODES and THYRISTORS
DATA BOOK
Page 2
1350A
PHASE CONTROL THYRISTORS Hockey Puk Version
ST780C..L SERIES
D-343
Bulletin I25192/B
Page 3
2222222222222
12
D-344
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage V
DRM/VRRM
, max. repetitive V
RSM
, maximum non- I
DRM/IRRM
max.
Type number Code peak and off-state voltage repetitive peak voltage
@ TJ = TJ max
V V mA
04 400 500 06 600 700
I
T(AV)
Max. average on-state current 1350 (500) A 180° conduction, half sine wave @ Heatsink temperature 55 (85) °C double side (single side) cooled
I
T(RMS)
Max. RMS on-state current 2700 DC @ 25°C heatsink temperature double side cooled
I
TSM
Max. peak, one-cycle 24400 t = 10ms No voltage non-repetitive surge current 25600 A t = 8.3ms reapplied
20550 t = 10ms 100% V
RRM
21500 t = 8.3ms reapplied Sinusoidal half wave,
I
2
t Maximum I2t for fusing 2986 t = 10ms No voltage Initial TJ = TJ max.
2726 t = 8.3ms reapplied 2112 t = 10ms 100% V
RRM
1928 t = 8.3ms reapplied
I
2
t Maximum I2√t for fusing 29860 KA2√s t = 0.1 to 10ms, no voltage reapplied
V
T(TO)
1
Low level value of threshold voltage
V
T(TO)
2
High level value of threshold voltage
r
t1
Low level value of on-state slope resistance
r
t2
High level value of on-state slope resistance
V
TM
Max. on-state voltage 1.31 V Ipk= 3600A, TJ = TJ max, tp = 10ms sine pulse
I
H
Maximum holding current 600
I
L
Typical latching current 1000
0.80 (16.7% x π x I
T(AV)
< I < π x I
T(AV)
), TJ = TJ max.
0.14 (16.7% x π x I
T(AV)
< I < π x I
T(AV)
), TJ = TJ max.
0.13 (I > π x I
T(AV)
),TJ = TJ max.
Parameter ST780C..L Units Conditions
0.90 (I > π x I
T(AV)
),TJ = TJ max.
On-state Conduction
KA2s
V
m
mA
T
J
= 25°C, anode supply 12V resistive load
di/dt Max. non-repetitive rate of rise Gate drive 20V, 20, t
r
1µs
of turned-on current T
J
= TJ max, anode voltage 80% V
DRM
Gate current 1A, dig/dt = 1A/µs V
d
= 0.67% V
DRM, TJ
= 25°C
I
TM
= 750A, TJ = TJ max, di/dt = 60A/µs, VR = 50V
dv/dt
= 20V/µs, Gate 0V 100Ω, tp = 500µs
Parameter ST780C..L Units Conditions
Switching
1000 A/µs
t
d
Typical delay time 1.0
t
q
Typical turn-off time 150
µs
ST780C..L 80
Page 4
D-348
Fig. 3 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics
Fig. 5- On-state Power Loss Characteristics
Fig. 6- On-state Power Loss Characteristics
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Page 5
D-349
Fig. 9 - On-state Voltage Drop Characteristics
Fig. 10 - Thermal Impedance Z
thJ-hs
Characteristics
Fig. 11 - Gate Characteristics
Page 6
23
D-3453333
dv/dt Maximum critical rate of rise of
off-state voltage
I
DRM
Max. peak reverse and off-state
I
RRM
leakage current
Blocking
500 V/µs TJ = TJ max. linear to 80% rated V
DRM
Parameter ST780C..L Units Conditions
80 mA TJ = TJ max, rated V
DRM/VRRM
applied
PGMMaximum peak gate power 10.0 TJ = TJ max, tp ≤ 5ms P
G(AV)
Maximum average gate power 2.0 TJ = TJ max, f = 50Hz, d% = 50
I
GM
Max. peak positive gate current 3.0 A TJ = TJ max, tp ≤ 5ms
+V
GM
Maximum peak positive gate voltage
-V
GM
Maximum peak negative gate voltage
T
J
= - 40°C
mA T
J
= 25°C
T
J
= 125°C
T
J
= - 40°C
V T
J
= 25°C
T
J
= 125°C
I
GD
DC gate current not to trigger 10 mA
Parameter ST780C..L Units Conditions
20
5.0
Triggering
TYP. MAX.
200 ­100 200
50 -
2.5 -
1.8 3.0
1.1 -
VGDDC gate voltage not to trigger 0.25 V
T
J
= TJ max
Max. required gate trigger/ cur­rent/ voltage are the lowest value which will trigger all units 12V anode-to-cathode applied
V
GT
DC gate voltage required to trigger
I
GT
DC gate current required to trigger
W
V
T
J
= TJ max, tp 5ms
Max. gate current/voltage not to trigger is the max. value which will not trigger any unit with rated V
DRM
anode-to-cathode applied
T
J
Max. operating temperature range -40 to 125
T
stg
Max. storage temperature range -40 to 150
R
thJ-hs
Max. thermal resistance, 0.073 DC operation single side cooled junction to heatsink 0.031 DC operation double side cooled
R
thC-hs
Max. thermal resistance, 0.011 DC operation single side cooled case to heatsink 0.006 DC operation double side cooled
F Mounting force, ± 10% 14700 N
(1500) (Kg)
wt Approximate weight 255 g
Parameter ST780C..L Units Conditions
K/W
°C
Case style TO - 200AC (B-PUK) See Outline Table
K/W
Thermal and Mechanical Specification
Page 7
2222222222222
12
D-346
1 - Thyristor 2 - Essential part number 3 - 0 = Converter grade 4 - C = Ceramic Puk 5 - Voltage code: Code x 100 = V
RRM
(See Voltage Rating Table)
6 - L = Puk Case TO-200AC (B-PUK) 7 - 0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads)
1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads) 2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads) 3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads)
8 - Critical dv/dt: None = 500V/µsec (Standard selection)
L = 1000V/µsec (Special selection)
Ordering Information Table
R
thJ-hs
Conduction
(The following table shows the increment of thermal resistence R
thJ-hs
when devices operate at different conduction angles than DC)
Device Code
51 2
3 4
ST 78 0 C 06 L 1
7
6
8
Single Side Double Side Single Side Double Side 180° 0.009 0.009 0.006 0.006 120° 0.011 0.011 0.011 0.011
90° 0.014 0.014 0.015 0.015 K/W T
J
= TJ max. 60° 0.020 0.020 0.021 0.021 30° 0.036 0.036 0.036 0.036
Sinusoidal conduction Rectangular conduction
Conduction angle Units Conditions
Page 8
23
D-3473333
Fig. 2 - Current Ratings Characteristics
Outline Table
Fig. 1 - Current Ratings Characteristics
TWO PLACES
PIN RECEPTACLE
AMP. 60598-1
0.7 (0.03) MIN.
34 (1.34) DIA. MAX.
53 (2.09) DIA. MAX.
58.5 (2 .3) D IA. M AX.
2 HOLES DIA. 3.5 (0.14) x
2.5 (0.1) DEEP
4.7 (0.18)
27 (1 .06 ) M AX .
0.7 (0.03) MIN.
6.2 (0.24) MIN.
20°± 5°
36.5 (1.44)
CREPAGE DISTANCE 36.33 (1.430) MIN.
STRIKE DISTANCE 17.43 (0.686) MIN.
Case Style TO-200AC (B-PUK)
All dimensions in millimeters (inches)
Loading...