Datasheet ST733C08LHK2, ST733C08LHK1L, ST733C08LHK1, ST733C08LHK0L, ST733C08LHK0 Datasheet (International Rectifier)

DISCRETE POWER DIODES and THYRISTORS

DATA BOOK

940A

INVERTER GRADE THYRISTORS Hockey Puk Version

ST733C..L SERIES

Bulletin I25188

case style TO-200AC (B-PUK)

Features

Metal case with ceramic insulator
International standard case TO-200AC (B-PUK)
All diffused design
Center amplifying gate
Guaranteed high dV/dt
Guaranteed high dI/dt
High surge current capability
Low thermal impedance
High speed performance

Typical Applications

Inverters
Choppers
Induction heating
All types of force-commutated converters

I

T(AV)

940 A

@ T

hs

55 °C

I

T(RMS)

1900 A

@ T

hs

25 °C

I

TSM

@ 50Hz 20000 A
@ 60Hz 20950 A

I

2

t @ 50Hz 2000 KA2s

@ 60Hz 1820 KA

2

s

V

DRM/VRRM

400 to 800 V

t

q

range 10 to 20 µs

T

J

- 40 to 125 °C

Parameters ST733C..L Units

Major Ratings and Characteristics

ST733C..L Series

ST733C..L 75

Voltage V

DRM/VRRM

, maximum V

RSM

, maximum I

DRM/IRRM

max.

Type number Code repetitive peak voltage non-repetitive peak voltage

@ TJ = TJ max.

V V mA

04 400 500
08 800 900

ELECTRICAL SPECIFICATIONS

Voltage Ratings

Frequency Units

50Hz 2200 1900 3580 3100 6800 5920
400Hz 2050 1660 3600 3130 3750 3240

1000Hz 1370 1070 2900 2450 2120 1780 A
2500Hz 500 370 1220 980 960 770

Recovery voltage Vr 50 50 50 50 50 50
Voltage before turn-on Vd V

DRM

V

DRM

V

DRM

Rise of on-state current di/dt 50 50 - - - - A/µs
Heatsink temperature 40 55 40 55 40 55 °C
Equivalent values for RC circuit 10Ω / 0.47µF 10Ω / 0.47µF 10Ω / 0.47µF

I

TM

180oel

180

o

el

100µs

I

TM

I

TM

Current Carrying Capability

V

I

T(AV)

Max. average on-state current 940 (350) A 180° conduction, half sine wave
@ Heatsink temperature 55 (85) °C double side (single side) cooled

I

T(RMS)

Max. RMS on-state current 1900 DC @ 25°C heatsink temperature double side cooled

I

TSM

Max. peak, one half cycle, 20000 t = 10ms No voltage
non-repetitive surge current 20950 A t = 8.3ms reapplied

16800 t = 10ms 100% V

RRM

17600 t = 8.3ms reapplied Sinusoidal half wave,

I

2

t Maximum I2t for fusing 2000 t = 10ms No voltage Initial TJ = TJ max

1820 t = 8.3ms reapplied
1410 t = 10ms 100% V

RRM

1290 t = 8.3ms reapplied

I

2

√t Maximum I2√t for fusing 20000 KA2√s t = 0.1 to 10ms, no voltage reapplied

Parameter ST733C..L Units Conditions

On-state Conduction

KA2s

ST733C..L Series

Fig. 7 - Maximum Non-repetitive Surge Current

Fig. 8 - Maximum Non-repetitive Surge Current

Fig. 3 - Current Ratings Characteristics

Fig. 4 - Current Ratings Characteristics

Fig. 5 - On-state Power Loss Characteristics Fig. 6 - On-state Power Loss Characteristics

ST733C..L Series

Fig. 14 - Frequency Characteristics

Fig. 15 - Frequency Characteristics

Fig. 16 - Maximum On-state Energy Power Loss Characteristics

1 E1

1 E2

1 E3

1 E4

1 E5

1 E1 1 E2 1 E3 1 E4

Pu lse Ba se w id t h (µ s)

20 jo u le s p e r p u lse

2

1

0.5

10

5

3

ST733 C ..L Se rie s
Sin u so id a l p u lse

0.4

0.3

tp

1E4 1 E1 1 E2 1 E3 1 E4

Pu lse B a se w id t h (µ s)

20 jo u le s p e r p u lse

2

1

0.5

10

5

0.4

0.3

ST733C ..L Se rie s
Re c ta n g u la r p ulse

d i/ d t = 50 A / µ s

tp

1 E1

3

1E 1 1E 2 1E3 1E4

50 Hz

400

2500

100

1000

1500

200

Pulse Base width (µs)

Snubber circ uit
R = 10 o hms
C = 0.47 µF
V = 80% V

ST73 3C..L S eries
Trapezoid al p ulse
T = 55°C

di/ dt = 50A/ µs

C

3000

s
s
D

DRM

t p

1E 1

500

2000

1E 2

1E 3

1E 4

1E 5

1E 1 1E 2 1E 3 1E4

50 H z

400

2500

100

1000

1500

200

Pu ls e a sewid th (µs )

5000

S nubb e r circ uit
R = 10 o hm s
C = 0.47 µF
V = 80% V

s
s
D

DRM

S T 733C..L S erie s
T ra pe zo id a l p ulse
T = 40°C
d i/ d t = 100A / µs

C

1E 4

500

2000

3000

B

1E 1 1E 2 1E3 1E4

50 Hz

400

2500

100

1000

1500

200

Pulse Base width (µs)

Snubber circ uit
R = 10 ohms
C = 0.47 µF
V = 80% V

3000

s
s
D

DRM

ST733C..L Series
Trapezoid al p ulse
T = 55°C

di/ dt = 10 0A/µs

C

t p

1E 1

500

2000

1E 2

1E 3

1E 4

1E 5

1E1 1E 2 1E 3 1E 4

50 H z

400

2500

100

1000

1500

200

Pulse B a s ewid th (µs )

5000

S nub b e r c ircuit
R = 10 ohm s
C = 0 .47 µF
V = 80% V

s
s
D

DRM

ST 733C..L S eries
T ra p e zo id a l pulse
T = 40°C
d i/ dt = 50A / µs

C

1E4

500

2000

3000

ST733C..L Series

Fig. 17 - Gate Characteristics

0.1

1

10

100

0.001 0.01 0.1 1 10 100

VGD

IGD

(b)

(a)

(1) (2) (3)

Instantane ou s Gate Curren t (A)

a) Rec om me nded loa d line fo r
b) Recom m ended load line for

<=30% rate d di/ dt : 1 0V, 1 0ohm s

Frequency Lim ited by PG(AV )

rate d di/ dt : 20V, 1 0ohm s; tr<=1 µs

tr<=1 µs

D evice: S T 733C..L Series

(1) PGM = 10W , tp = 20m s
(2) PGM = 20W , tp = 10m s
(3) PGM = 40W , tp = 5ms
(4) PGM = 60W , tp = 3.3m s

R ecta ng ular g ate pulse

(4)

ST733C..L Series

Fig. 10 - Thermal Impedance Z

thJC

Characteristic

Fig. 12 - Reverse Recovery Current Characteristics

Fig. 11 - Reverse Recovered Charge Characteristics

Fig. 9 - On-state Voltage Drop Characteristics

Fig. 13 - Frequency Characteristics

ST733C..L Series

V

TM

Max. peak on-state voltage 1.63 ITM= 1700A, TJ = TJ max, tp = 10ms sine wave pulse

V

T(TO)1

Low level value of threshold
voltage

V

T(TO)2

High level value of threshold
voltage

r

t

1

Low level value of forward
slope resistance

r

t

2

High level value of forward
slope resistance

I

H

Maximum holding current 600 TJ = 25°C, IT > 30A

I

L

Typical latching current 1000 TJ = 25°C, VA= 12V, Ra = 6Ω, IG= 1A

Parameter ST733C..L Units Conditions

On-state Conduction

1.09 (16.7% x π x I

T(AV)

< I < π x I

T(AV)

), TJ = TJ max.

1.20 (I > π x I

T(AV)

), TJ = TJ max.

V

0.32 (16.7% x π x I

T(AV)

< I < π x I

T(AV)

), TJ = TJ max.

0.29 (I > π x I

T(AV)

), TJ = TJ max.

mΩ

mA

di/dt Max. non-repetitive rate of rise T

J

= TJ max, V

DRM

= rated V

DRM

, I

TM

= 2 x di/dt

of turned-on current Gate pulse: 20V 20Ω, 10µs 0.5µs rise time

T

J

= 25°C, V

DM

= rated V

DRM, ITM

= 50A DC, tp= 1µs
Resistive load, Gate pulse: 10V, 5Ω source
T

J

= TJ max, I

TM

= 550A, commutating di/dt = -40A/µs

V

R

= 50V, tp = 500µs, dv/dt: see table in device code

Switching

Parameter ST733C..L Units Conditions

1000 A/µs

t

d

Typical delay time 1.5

Min Max

dv/dt Maximum critical rate of rise of T

J

= TJ max. linear to 80% V

DRM

, higher value

off-state voltage available on request

I

RRM

Max. peak reverse and off-state

I

DRM

leakage current

Parameter ST733C..L Units Conditions

Blocking

500 V/µs

75 mA T

J

= TJ max, rated V

DRM/VRRM

applied

P

GM

Maximum peak gate power 60

P

G(AV)

Maximum average gate power 10

I

GM

Max. peak positive gate current 10 A TJ = TJ max, tp ≤ 5ms

+V

GM

Maximum peak positive
gate voltage

-V

GM

Maximum peak negative
gate voltage

I

GT

Max. DC gate current required
to trigger

V

GT

Max. DC gate voltage required
to trigger

I

GD

Max. DC gate current not to trigger 20 mA

V

GD

Max. DC gate voltage not to trigger 0.25 V

Triggering

Parameter ST733C..L Units Conditions

W TJ = TJ max., f = 50Hz, d% = 50

20

5

V TJ = TJ max, tp ≤ 5ms

200 mA

3 V

T

J

= 25°C, VA = 12V, Ra = 6Ω

TJ = TJ max, rated V

DRM

applied

µs

t

q

Max. turn-off time 10 20

ST733C..L Series

T

J

Max. operating temperature range -40 to 125

T

stg

Max. storage temperature range -40 to 150

R

thJ-hs

Max. thermal resistance, 0.073 DC operation single side cooled
junction to heatsink 0.031 DC operation double side cooled

R

thC-hs

Max. thermal resistance, 0.011 DC operation single side cooled
case to heatsink 0.005 DC operation double side cooled

F Mounting force, ± 10% 14700 N

(1500) (Kg)

wt Approximate weight 255 g

Parameter ST733C..L Units Conditions

K/W

Thermal and Mechanical Specification

°C

Case style TO - 200AC (B-PUK) See Outline Table

K/W

Single Side Double Side Single Side Double Side
180° 0.009 0.009 0.006 0.006
120° 0.011 0.011 0.011 0.011

90° 0.014 0.014 0.015 0.015 K/W T

J

= TJ max.

60° 0.020 0.021 0.021 0.022
30° 0.036 0.036 0.036 0.036

Sinusoidal conduction Rectangular conduction

Conduction angle Units Conditions

∆R

thJ-hs

Conduction

(The following table shows the increment of thermal resistence R

thJ-hs

when devices operate at different conduction angles than DC)

Ordering Information Table

5

6

8

9

ST 73 3 C 08 L H K 1

3

4

10

7

Device Code

1 2

1 - Thyristor
2 - Essential part number
3 - 3 = Fast turn off
4 - C = Ceramic Puk
5 - Voltage code: Code x 100 = V

RRM

(See Voltage Rating Table)

6 - L = Puk Case TO-200AC (B-PUK)
7 - Reapplied dv/dt code (for t

q

test condition)

8 - t

q

code

9 - 0 = Eyelet term. (Gate and Aux. Cathode Unsoldered Leads)

1 = Fast-on term. (Gate and Aux. Cathode Unsoldered Leads)
2 = Eyelet term. (Gate and Aux. Cathode Soldered Leads)

3 = Fast-on term. (Gate and Aux. Cathode Soldered Leads)

- Critical dv/dt:
None = 500V/µsec (Standard value)

L

= 1000V/µsec (Special selection)

dv/dt - tq combinations available

dv/dt (V/µs) 20 50 100 200 400

10 CN DN EN -- -­12 CM DM EM FM * -­15 CL DL EL FL * HL
18 CP DP EP FP HP
20 CK DK EK FK H

tq(µs)

* Standard part number.
All other types available only on request.

10

ST733C..L Series

Fig. 1 - Current Ratings Characteristics

Fig. 2 - Current Ratings Characteristics

Outline Table

TWO PLACES

PIN RECEPTACLE

AMP. 60598-1

0.7 (0.03) MIN.

34 (1.34) DIA. MAX.

53 (2.09) DIA. MAX.

58.5 (2.3 ) D IA. M AX .

2 HOLES DIA. 3.5 (0.14) x

2.5 (0.1) DEEP

4.7 (0.18)

27 (1.06 ) M AX .

0.7 (0.03) MIN.

6.2 (0.24) MIN.

20°± 5°

36.5 (1.44)

CREPAGE DISTANCE 36.33 (1.430) MIN.

STRIKE DISTANCE 17.43 (0.686) MIN.

Case Style TO-200AC (B-PUK)

All dimensions in millimeters (inches)