Page 1
DISCRETE POWER DIODES and THYRISTORS
Next Data SheetIndex
Previous Datasheet
To Order
DATA BOOK
Page 2
Bulletin I25188
Next Data SheetIndex
Previous Datasheet
To Order
ST733C..L SERIES
INVERTER GRADE THYRISTORS Hockey Puk Version
Features
Metal case with ceramic insulator
International standard case TO-200AC (B-PUK)
All diffused design
Center amplifying gate
Guaranteed high dV/dt
Guaranteed high dI/dt
High surge current capability
Low thermal impedance
High speed performance
940A
Typical Applications
Inverters
Choppers
Induction heating
All types of force-commutated converters
Major Ratings and Characteristics
Parameters ST733C..L Units
I
T(AV)
I
T(RMS)
I
TSM
@ T
hs
@ T
hs
@ 50Hz 20000 A
@ 60Hz 20950 A
940 A
55 °C
1900 A
25 °C
case style TO-200AC (B-PUK)
2
I
t @ 50Hz 2000 KA2s
@ 60Hz 1820 KA
V
DRM/VRRM
t
range 10 to 20 µs
q
T
J
400 to 800 V
- 40 to 125 °C
2
s
Page 3
ST733C..L Series
To Order
Next Data SheetIndex
Previous Datasheet
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage V
DRM/VRRM
Type number Code repetitive peak voltage non-repetitive peak voltage
, maximum V
, maximum I
RSM
DRM/IRRM
@ TJ = TJ max.
max.
V V mA
ST733C..L 75
04 400 500
08 800 900
Current Carrying Capability
I
Frequency Units
o
180
el
50Hz 2200 1900 3580 3100 6800 5920
400Hz 2050 1660 3600 3130 3750 3240
1000Hz 1370 1070 2900 2450 2120 1780 A
2500Hz 500 370 1220 980 960 770
Recovery voltage Vr 50 50 50 50 50 50
Voltage before turn-on Vd V
Rise of on-state current di/dt 50 50 - - - - A/µs
Heatsink temperature 40 55 40 55 40 55 °C
Equivalent values for RC circuit 10Ω / 0.47µF 10Ω / 0.47µF 10Ω / 0.47µF
TM
180oel
DRM
V
DRM
I
TM
100µs
V
DRM
I
TM
V
On-state Conduction
Parameter ST733C..L Units Conditions
I
T(AV)
I
T(RMS)
I
TSM
2
I
2
I
Max. average on-state current 940 (350) A 180° conduction, half sine wave
@ Heatsink temperature 55 (85) °C double side (single side) cooled
Max. RMS on-state current 1900 DC @ 25°C heatsink temperature double side cooled
Max. peak, one half cycle, 20000 t = 10ms No voltage
non-repetitive surge current 20950 A t = 8.3ms reapplied
t Maximum I2t for fusing 2000 t = 10ms No voltage Initial TJ = TJ max
√t Maximum I2√t for fusing 20000 KA2√s t = 0.1 to 10ms, no voltage reapplied
16800 t = 10ms 100% V
17600 t = 8.3ms reapplied Sinusoidal half wave,
1820 t = 8.3ms reapplied
1410 t = 10ms 100% V
1290 t = 8.3ms reapplied
KA2s
RRM
RRM
Page 4
ST733C..L Series
Fig. 7 - Maximum Non-repetitive Surge Current
Fig. 8 - Maximum Non-repetitive Surge Current
To Order
Next Data SheetIndex
Previous Datasheet
Fig. 3 - Current Ratings Characteristics
Fig. 5 - On-state Power Loss Characteristics Fig. 6 - On-state Power Loss Characteristics
Fig. 4 - Current Ratings Characteristics
Page 5
ST733C..L Series
Fig. 16 - Maximum On-state Energy Power Loss Characteristics
Pu lse Ba se w id t h (µ s)
Pu lse B a se w id t h (µ s)
Pulse Base width (µs)
Pu ls e a sewid th (µs )
B
Pulse Base width (µs)
Pulse B a s ewid th (µs )
To Order
Next Data SheetIndex
Previous Datasheet
1E 5
S nub b e r c ircuit
R = 10 ohm s
s
C = 0 .47 µF
s
V = 80% V
D
1E 4
1E 3
1E 2
1E1 1E 2 1E 3 1E 4
DRM
5000
3000
2500
2000
1500
1000
500
ST 733C..L S eries
T ra p e zo id a l pulse
T = 40°C
C
d i/ dt = 50A / µs
100
200
400
Fig. 14 - Frequency Characteristics
1E 5
S nubb e r circ uit
R = 10 o hm s
s
C = 0.47 µF
s
V = 80% V
D
DRM
S T 733C..L S erie s
T rape zo id a l p ulse
T = 40°C
C
d i/ d t = 100A /µs
Snubber circ uit
R = 10 o hms
s
C = 0.47 µF
s
V = 80% V
D
50 H z
1E 1
1E4
1E 1 1E 2 1E3 1E4
Snubber circ uit
R = 10 ohms
s
C = 0.47 µF
s
V = 80% V
D
DRM
3000
DRM
2500
2000
1500
1000
500
ST73 3C..L S eries
Trapezoid al p ulse
T = 55°C
t p
di/ dt = 50A/ µs
200
400
ST733C..L Series
Trapezoid al p ulse
T = 55°C
t p
di/ dt = 10 0A/µs
C
C
100
50 Hz
1E 4
50 Hz
100
200
400
500
1E 3
2500
3000
5000
1E 2
1E 1 1E 2 1E 3 1E4
1000
1500
2000
Fig. 15 - Frequency Characteristics
1 E5
ST733 C ..L Se rie s
Sin u so id a l p u lse
1 E4
1 E3
1 E2
tp
2
1
0.5
0.4
0.3
20 jo u le s p e r p u lse
10
5
3
100
200
400
500
1000
1500
2000
2500
3000
1E 4
1E 1
1E 1 1E 2 1E3 1E4
ST733C ..L Se rie s
Re c ta n g u la r p ulse
d i/ d t = 50 A / µ s
tp
20 jo u le s p e r p u lse
10
5
3
2
1
0.5
0.4
0.3
50 Hz
1 E1
1 E1 1 E2 1 E3 1 E4
1 E1
1E4 1 E1 1 E2 1 E3 1 E4
Page 6
ST733C..L Series
Instantane ou s Gate Curren t (A)
To Order
Next Data SheetIndex
Previous Datasheet
100
R ec ta ngular g ate pulse
a) Recom me nded loa d line fo r
rate d di/ dt : 20V, 1 0ohm s; tr<=1 µs
b) Recom m ended load line for
<=30% rate d di/ dt : 1 0V, 10oh m s
tr<=1 µs
10
(b)
1
VGD
IGD
D evice: S T 733C..L Series
0.1
0.001 0.01 0.1 1 10 100
(a)
(1) PGM = 10W , tp = 20m s
(2) PGM = 20W , tp = 10m s
(3) PGM = 40W , tp = 5ms
(4) PGM = 60W , tp = 3.3m s
(1) (2) (3)
Frequency Lim ited by PG(AV )
Fig. 17 - Gate Characteristics
(4)
Page 7
ST733C..L Series
Fig. 13 - Frequency Characteristics
To Order
Next Data SheetIndex
Previous Datasheet
Fig. 9 - On-state Voltage Drop Characteristics
Fig. 11 - Reverse Recovered Charge Characteristics
Fig. 10 - Thermal Impedance Z
Fig. 12 - Reverse Recovery Current Characteristics
Characteristic
thJC
Page 8
On-state Conduction
To Order
Next Data SheetIndex
Previous Datasheet
Parameter ST733C..L Units Conditions
ST733C..L Series
V
V
V
r
r
I
I
Max. peak on-state voltage 1.63 ITM= 1700A, TJ = TJ max, tp = 10ms sine wave pulse
TM
Low level value of threshold
T(TO)1
voltage
High level value of threshold
T(TO)2
voltage
Low level value of forward
1
t
slope resistance
High level value of forward
2
t
slope resistance
Maximum holding current 600 TJ = 25°C, IT > 30A
H
Typical latching current 1000 TJ = 25°C, VA= 12V, Ra = 6Ω, IG= 1A
L
1.09 (16.7% x π x I
V
1.20 (I > π x I
0.32 (16.7% x π x I
mΩ
0.29 (I > π x I
mA
Switching
Parameter ST733C..L Units Conditions
di/dt Max. non-repetitive rate of rise T
of turned-on current Gate pulse: 20V 20Ω, 10µs 0.5µs rise time
t
d
t
Typical delay time 1.5
Max. turn-off time 10 20
q
1000 A/µs
Min Max
µs
= TJ max, V
J
T
= 25°C, V
J
T(AV)
), TJ = TJ max.
T(AV)
T(AV)
), TJ = TJ max.
T(AV)
DRM
= rated V
DM
< I < π x I
< I < π x I
= rated V
DRM, ITM
), TJ = TJ max.
T(AV)
), TJ = TJ max.
T(AV)
, I
DRM
= 2 x di/dt
TM
= 50A DC, tp= 1µs
Resistive load, Gate pulse: 10V, 5Ω source
T
= TJ max, I
J
V
= 50V, tp = 500µs, dv/dt: see table in device code
R
= 550A, commutating di/dt = -40A/µs
TM
Blocking
Parameter ST733C..L Units Conditions
dv/dt Maximum critical rate of rise of T
off-state voltage available on request
I
I
Max. peak reverse and off-state
RRM
leakage current
DRM
Triggering
Parameter ST733C..L Units Conditions
P
P
I
+V
-V
I
V
I
V
Maximum peak gate power 60
GM
Maximum average gate power 10
G(AV)
Max. peak positive gate current 10 A TJ = TJ max, tp ≤ 5ms
GM
Maximum peak positive
GM
gate voltage
Maximum peak negative
GM
gate voltage
Max. DC gate current required
GT
to trigger
Max. DC gate voltage required
GT
to trigger
Max. DC gate current not to trigger 20 mA
GD
Max. DC gate voltage not to trigger 0.25 V
GD
500 V/µs
75 mA T
W TJ = TJ max., f = 50Hz, d% = 50
20
V TJ = TJ max, tp ≤ 5ms
5
200 mA
3 V
= TJ max. linear to 80% V
J
= TJ max, rated V
J
T
= 25°C, VA = 12V, Ra = 6Ω
J
DRM/VRRM
TJ = TJ max, rated V
DRM
DRM
applied
, higher value
applied
Page 9
ST733C..L Series
= 1000V/µsec (Special selection)
To Order
Next Data SheetIndex
Previous Datasheet
Thermal and Mechanical Specification
Parameter ST733C..L Units Conditions
T
Max. operating temperature range -40 to 125
J
T
Max. storage temperature range -40 to 150
stg
R
Max. thermal resistance, 0.073 DC operation single side cooled
thJ-hs
junction to heatsink 0.031 DC operation double side cooled
R
Max. thermal resistance, 0.011 DC operation single side cooled
thC-hs
case to heatsink 0.005 DC operation double side cooled
F Mounting force, ± 10% 14700 N
(1500) (Kg)
wt Approximate weight 255 g
Case style TO - 200AC (B-PUK) See Outline Table
°C
K/W
K/W
∆R
(The following table shows the increment of thermal resistence R
Conduction
thJ-hs
when devices operate at different conduction angles than DC)
thJ-hs
Sinusoidal conduction Rectangular conduction
Conduction angle Units Conditions
Single Side Double Side Single Side Double Side
180° 0.009 0.009 0.006 0.006
120° 0.011 0.011 0.011 0.011
90° 0.014 0.014 0.015 0.015 K/W T
60° 0.020 0.021 0.021 0.022
30° 0.036 0.036 0.036 0.036
= TJ max.
J
Ordering Information Table
Device Code
ST 73 3 C 08 L H K 1
1 - Thyristor
2 - Essential part number
1 2
3
4
5
7
6
8
9
10
3 - 3 = Fast turn off
4 - C = Ceramic Puk
5 - Voltage code: Code x 100 = V
6 - L = Puk Case TO-200AC (B-PUK)
7 - Reapplied dv/dt code (for t
8 - t
code
q
9 - 0 = Eyelet term. (Gate and Aux. Cathode Unsoldered Leads)
1 = Fast-on term. (Gate and Aux. Cathode Unsoldered Leads)
2 = Eyelet term. (Gate and Aux. Cathode Soldered Leads)
3 = Fast-on term. (Gate and Aux. Cathode Soldered Leads)
10
- Critical dv/dt:
None = 500V/µsec (Standard value)
L
(See Voltage Rating Table)
RRM
test condition)
q
dv/dt - tq combinations available
dv/dt (V/µs) 20 50 100 200 400
10 CN DN EN -- --
tq(µs)
* Standard part number.
All other types available only on request.
12 CM DM EM FM * -15 CL DL EL FL * HL
18 CP DP EP FP HP
20 CK DK EK FK H
Page 10
Outline Table
58.5 (2.3 ) D IA. M AX .
27 (1.06 ) M AX .
STRIKE DISTANCE 17.43 (0.686) MIN.
To Order
Next Data SheetIndex
Previous Datasheet
ST733C..L Series
0.7 (0.03) MIN.
0.7 (0.03) MIN.
34 (1.34) DIA. MAX.
TWO PLACES
53 (2.09) DIA. MAX.
PIN RECEPTACLE
AMP. 60598-1
Case Style TO-200AC (B-PUK)
All dimensions in millimeters (inches)
6.2 (0.24) MIN.
20°± 5°
4.7 (0.18)
36.5 (1.44)
2 HOLES DIA. 3.5 (0.14) x
2.5 (0.1) DEEP
CREPAGE DISTANCE 36.33 (1.430) MIN.
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Loading...