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polyfet rf devices
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Militry Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
"Polyfet" process features
low feedback and output capacitances
resulting in high F transistors with high
input impedance and high efficiency.
Total
Device
Dissipation
190
TM
t
ABSOLUTE MAXIMUM RATINGS ( T =
Junction to
Case Thermal
Resistance
o
Watts V
0.85
C/W
Maximum
Junction
Temperature
ST724
SILICON GATE ENHANCEMENT MODE
RF POWER TRANSISTORVDMOS
Watts
60.0
Package Style
HIGH EFFICIENCY, LINEAR
HIGH GAIN, LOW NOISE
o
25 C )
Storage
Temperature
o
-65 C to 150 C200 C A V
DC Drain
Current
oo
19.0
Drain to
Gate
Voltage
50 V
Single Ended
AT
Drain to
Source
Voltage
50
Gate to
Source
Voltage
20
Gps
η
Bvdss
Idss
Igss
Vgs
Idsat
Ciss
Crss
Coss
RF CHARACTERISTICS (
PARAMETERSYMBOL MIN TYP MAX UNITS TEST CONDITIONS
Common Source Power Gain
Drain Efficiency
Load Mismatch ToleranceVSWR
10
75
60.0
WATTS OUTPUT )
dB
%
20:1 Relative
0.80
Idq = A, Vds = V, F =
Idq =
0.80
A, Vds = V, F =
Idq = 0.80
A, Vds = V, F =
12.5
12.5
12.5
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
PARAMETERSYMBOL MIN TYP MAX UNITS TEST CONDITIONS
Drain Breakdown Voltage
Zero Bias Drain Current
Gate Leakage Current
Gate Bias for Drain Current
Forward TransconductancegM Vds = 10V, Vgs = 5V
Saturation Current
Common Source Input Capacitance
Common Source Feedback Capacitance
Common Source Output Capacitance
40
4.0
1
1 7
5.2
0.20
38.00
180.0
14.0
220.0
V
mA
uA
V
Mho
Ohm
Amp
pF
pF
pF
80.00Ids = mA, Vgs = 0V
Vds =
Vds = 0V Vgs = 30V
Vgs = 20V, Ids = Rdson Saturation Resistance
Vgs = 20V, Vds = 10V
Vds =
Vds =
Vds =
12.5
0.40
V, Vgs = 0V
A, Vgs = VdsIds =
10.00
Vgs = 0V, F = 1 MHz12.5
Vgs = 0V, F = 1 MHz12.5
Vgs = 0V, F = 1 MHz12.5
MHz
175
175
MHz
175
MHz
A
POLYFET RF DEVICES
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com
REVISION 03/28/2001
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ST724
POUT VS PIN GRAPH
ST724 POUT VS PIN Freq=175MHz,
80
70
60
50
40
30
20
10
0
0 2 4 6 8 10
50
45
40
35
30
25
20
ID IN AMPS
15
10
5
0
0 2 4 6 8 10 12 14 16 18 20
vg=2v Vg=4v Vg=6v vg=8v 0
VDS=12.5V, Idq=.8A
Pout
Efficiency = 75%
Gain
PIN IN WATTS
S1C 4 DIE IV
VDS IN VOLTS
14.00
13.00
12.00
11.00
10.00
9.00
8.00
CAPACITANCE VS VOLTAGE
1000
100
10
S1C 4 DIE CAPACITANCE
Coss
Ciss
Crss
0 2.5 5 7.5 10 12.5 15
VDS IN VOLTS
ID & GM VS VGSIV CURVE
S1C 4 DIE ID & GM Vs VG
100.00
10.00
1.00
Id in amps; Gm in mhos
0.10
0 2 4 6 8 10 12 14 16
gM
Vgs in Volts
Id
Zin Zout PACKAGE DIMENSIONS IN INCHES
Tolerance .XX +/-0.01 .XXX +/-.005 inches
POLYFET RF DEVICES
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com
REVISION 03/28/2001
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