Page 1
(Hockey PUK Version), 960 A
TO-200AB (E-PUK)
Vishay High Power Products
Phase Control Thyristors
FEATURES
• Center amplifying gate
• Metal case with ceramic insulator
• International standard case TO-200AB (E-PUK)
• Low profile hockey PUK to increase
current-carrying capability
• Lead (Pb)-free
• Designed and qualified for industrial level
ST380CPbF Series
RoHS
COMPLIANT
PRODUCT SUMMARY
I
T(AV)
960 A
TYPICAL APPLICATIONS
• DC motor controls
• Controlled DC power supplies
• AC controllers
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
I
T(AV)
I
T(RMS)
I
TSM
2
I
t
V
DRM/VRRM
t
q
T
J
T
hs
T
hs
50 Hz 15 000
60 Hz 15 700
50 Hz 1130
60 Hz 1030
Typical 100 µs
960 A
55 °C
1900 A
25 °C
400/600 V
- 40 to 125 °C
ELECTRICAL SPECIFICATIONS
A
kA2s
VOLTAGE RATINGS
V
TYPE NUMBER
ST380C..C
Document Number: 94410 For technical questions, contact: ind-modules@vishay.com
Revision: 11-Aug-08 1
VOLTAGE
CODE
04 400 500
06 600 700
DRM/VRRM
, MAXIMUM REPETITIVE PEAK
AND OFF-STATE VOLTAGE
V
NON-REPETITIVE PEAK VOLTAGE
V
RSM
, MAXIMUM
V
I
DRM/IRRM
AT T
= TJ MAXIMUM
J
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MAXIMUM
mA
50
Page 2
ST380CPbF Series
Vishay High Power Products
Phase Control Thyristors
(Hockey PUK Version), 960 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at heatsink temperature
Maximum RMS on-state current I
I
T(RMS)
Maximum peak, one-cycle
non-repetitive surge current
2
Maximum I
Maximum I
t for fusing I2t
2
√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 11 300 kA2√s
Low level value of threshold voltage V
High level value of threshold voltage V
Low level value of on-state slope resistance r
High level value of on-state slope resistance r
Maximum on-state voltage V
Maximum holding current I
Typical latching current I
T(AV)
180° conduction, half sine wave
double side (single side) cooled
DC at 25 °C heatsink temperature double side cooled 1900
I
TSM
T(TO)1
T(TO)2
t1
t2
TM
H
L
t = 10 ms
t = 8.3 ms 15 700
t = 10 ms
t = 8.3 ms 13 200
t = 10 ms
t = 8.3 ms 1030
t = 10 ms
t = 8.3 ms 725
(16.7 % x π x I
(I > π x I
(16.7 % x π x I
(I > π x I
Ipk = 3000 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.60 V
TJ = 25 °C, anode supply 12 V resistive load
No voltage
reapplied
100 % V
reapplied
No voltage
RRM
Sinusoidal half wave,
initial T
= TJ maximum
J
reapplied
100 % V
RRM
reapplied
< I < π x I
T(AV)
), TJ = TJ maximum 0.88
T(AV)
< I < π x I
T(AV)
), TJ = TJ maximum 0.24
T(AV)
), TJ = TJ maximum 0.85
T(AV)
), TJ = TJ maximum 0.25
T(AV)
960 (440) A
55 (75) °C
15 000
12 600
1130
800
600
1000
A
kA2s
V
mΩ
mA
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum non-repetitive rate of rise
of turned-on current
Typical delay time t
Typical turn-off time t
dI/dt
d
q
Gate drive 20 V, 20 Ω, t
T
= TJ maximum, anode voltage ≤ 80 % V
J
≤ 1 µs
r
DRM
Gate current 1 A, dIg/dt = 1 A/µs
V
= 0.67 % V
d
, TJ = 25 °C
DRM
ITM = 550 A, TJ = TJ maximum, dI/dt = 40 A/µs,
V
= 50 V, dV/dt = 20 V/µs, gate 0 V 100 Ω, tp = 500 µs
R
1000 A/µs
1.0
µs
100
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum critical rate of rise of
off-state voltage
Maximum peak reverse and
off-state leakage current
dV/dt T
I
RRM,
I
DRM
= TJ maximum linear to 80 % rated V
J
TJ = TJ maximum, rated V
DRM/VRRM
DRM
500 V/µs
applied 50 mA
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Document Number: 94410
2 Revision: 11-Aug-08
Page 3
ST380CPbF Series
Phase Control Thyristors
Vishay High Power Products
(Hockey PUK Version), 960 A
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS
Maximum peak gate power P
Maximum average gate power P
Maximum peak positive gate current I
Maximum peak positive gate voltage + V
Maximum peak negative gate voltage - V
G(AV)
GM
TJ = TJ maximum, tp ≤ 5 ms 10.0
GM
TJ = TJ maximum, f = 50 Hz, d% = 50 2.0
TJ = TJ maximum, tp ≤ 5 ms 3.0 A
GM
TJ = TJ maximum, tp ≤ 5 ms
GM
TJ = - 40 °C
DC gate current required to trigger I
DC gate voltage required to trigger V
DC gate current not to trigger I
DC gate voltage not to trigger V
GT
GT
GD
GD
= 25 °C 100 200
J
T
= 125 °C 50 -
J
TJ = - 40 °C 2.5 -
= 25 °C 1.8 3.0
T
J
= 125 °C 1.1 -
T
J
Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied
Maximum gate current/voltage
not to trigger is the maximum
TJ = TJ maximum
value which will not trigger any
unit with rated V
anode to
DRM
cathode applied
VALUES
TYP. MAX.
20
5.0
200 -
10 mA
0.25 V
UNITS
W
V
mAT
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum operating junction temperature range T
Maximum storage temperature range T
Maximum thermal resistance, junction to heatsink R
Maximum thermal resistance, case to heatsink R
J
Stg
thJ-hs
thC-hs
DC operation single side cooled 0.09
DC operation double side cooled 0.04
DC operation single side cooled 0.02
DC operation double side cooled 0.01
Mounting force, ± 10 %
Approximate weight 83 g
Case style See dimensions - link at the end of datasheet TO-200AB (E-PUK)
ΔR
CONDUCTION ANGLE
CONDUCTION
thJ-hs
SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION
SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE
TEST CONDITIONS UNITS
180° 0.010 0.011 0.007 0.007
120° 0.012 0.012 0.012 0.013
90° 0.015 0.015 0.016 0.017
= TJ maximum K/W
T
J
60° 0.022 0.022 0.023 0.023
30° 0.036 0.036 0.036 0.037
Note
• The table above shows the increment of thermal resistance R
when devices operate at different conduction angles than DC
thJ-hs
- 40 to 125
- 40 to 150
9800
(1000)
°C
K/W
N
(kg)
Document Number: 94410 For technical questions, contact: ind-modules@vishay.com
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Revision: 11-Aug-08 3
Page 4
ST380CPbF Series
Vishay High Power Products
130
120
110
100
90
80
70
60
50
40
0 100 200 300 400 500 600 700
Maximum Allowable Heatsink Temperature (°C)
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
130
120
110
100
90
80
70
60
50
40
30
20
0 200 400 600 800 1000 1200
Maximum Allowa ble Heatsink Temp erature (°C)
Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics
ST3 80 C . . C Se ri e s
(Single Side Cooled)
R (DC) = 0.09 K/ W
thJ-hs
30°
60°
ST380C..C Se rie s
(Single Side Cooled)
R (DC ) = 0.09 K/ W
thJ-hs
30°
60°
90°
120°
Cond uc tion Angle
90°
120°
Conduction Period
180°
DC
Phase Control Thyristors
(Hockey PUK Version), 960 A
130
120
110
100
90
80
70
60
50
180°
40
30
20
Maximum Allowable Heatsink Temp erature (°C)
2000
1800
1600
1400
1200
1000
800
600
400
200
Maximum Average On-sta te Power Loss (W)
Fig. 5 - On-State Power Loss Characteristics
ST3 80 C . . C Se r i e s
(Double Side Cooled)
R (DC) = 0.04 K/ W
thJ-hs
Conduction Period
30°
60°
90°
120°
180°
DC
0 400 800 1200 1600 2000
Average On-stat e Current (A)
Fig. 4 - Current Ratings Characteristics
180°
120°
90°
60°
30°
0
0 200 400 600 800 1000 1200 1400
Average On-state Current (A)
RM S Li m i t
Conduction Angle
ST3 80 C . . C Se ri e s
T = 1 25 ° C
J
130
120
110
100
90
80
70
60
50
40
30
20
0 200 400 600 800 1000 1200 1400
Maximum Allowable He atsink Temp erature (°C)
Average On-state Current (A)
ST38 0 C . . C Se r i e s
(Double Side Cooled)
R (DC) = 0.04 K/W
thJ-hs
Conduction Angle
30°
60°
90°
120°
Fig. 3 - Current Ratings Characteristics
180°
2800
2400
2000
1600
1200
800
400
Maximum Averag e On-state Power Loss (W)
DC
180°
120°
90°
60°
30°
RM S Li m i t
Cond uction Period
ST380C..C Se ries
T = 12 5 °C
J
0
0 400 800 1200 1600 2000
Average On-state Current (A)
Fig. 6 - On-State Power Loss Characteristics
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Document Number: 94410
4 Revision: 11-Aug-08
Page 5
ST380CPbF Series
Phase Control Thyristors
(Hockey PUK Version), 960 A
14000
At Any Rated Load Condition And With
Rat ed V Applied Follow ing Surge.
13000
12000
11000
10000
9000
8000
ST380C..C Serie s
7000
Pe a k Half Sine Wave On -st ate Current (A)
6000
110100
Number Of Equa l Amplitude Ha lf Cycle Current Pulses (N)
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
RRM
Initia l T = 125°C
J
@ 6 0 Hz 0. 0 0 8 3 s
@ 50 Hz 0.0100 s
10000
T = 2 5 °C
J
Vishay High Power Products
15000
Maximum Non Repetitive Surge Current
14000
13000
12000
11000
10000
9000
8000
7000
Pe a k Ha lf Si ne Wa ve On -st a t e C ur re n t ( A)
6000
Fig. 8 - Maximum Non-Repetitive Surge Current
Versus Pulse Train Durat ion. Control
Of C onduc tion May Not Be Ma int ained .
ST3 8 0 C . .C Se r i e s
0.01 0.1 1
Pulse Tra in D u r a t io n ( s)
Initial T = 125°C
No Vo lt ag e Re a pp lied
Ra t e d V Re a p p l i e d
J
RRM
Single and Double Side Cooled
T = 125°C
J
1000
ST3 80 C . . C Se r i e s
Instantaneous On-state Current (A)
100
0.5 1 1.5 2 2.5 3 3.5
Instantaneous On-state Voltage (V)
Fig. 9 - On-State Voltage Drop Characteristics
0.1
thJ-hs
0.01
ST3 8 0 C . .C Se ri e s
St e a d y St a t e V a l u e
R = 0.09 K/ W
thJ-hs
(Single Side Cooled)
R = 0.04 K/ W
thJ-hs
(Double Side Cooled)
(DC Operation)
0.001
Transient The rma l Imp eda nc e Z (K/ W)
0.001 0.01 0.1 1 10
Square Wave Pulse Duration (s)
Fig. 10 - Thermal Impedance Z
Characteristics
thJ-hs
Document Number: 94410 For technical questions, contact: ind-modules@vishay.com
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Revision: 11-Aug-08 5
Page 6
ST380CPbF Series
Vishay High Power Products
100
Rectangular gate pulse
a) Recommended load line for
rated di/dt : 20V, 10ohms; tr<=1 µs
b) Rec ommended load line for
<=30% rated di/dt : 10V, 10ohms
10
tr<=1 µs
1
In st a nt a n eo us G a t e Vo l t a g e ( V)
0.1
0.001 0.0 1 0.1 1 10 100
ORDERING INFORMATION TABLE
VGD
Phase Control Thyristors
(Hockey PUK Version), 960 A
(1) PGM = 10W, tp = 4ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, t p = 0.66m s
(a)
(b)
Tj =- 4 0 ° C
Tj=25 °C
Tj = 1 25 ° C
IG D
De vic e: ST380C ..C Se rie s
Instantaneous Gate Current (A)
Fig. 11 - Gate Characteristics
Frequenc y Limited by PG(AV)
(1)
(2)
(3)
(4)
Device code
ST 38 0 C 06 C 1 - PbF
324
51
6789
1 - Thyristor
2 - Essential part number
3 - 0 = Converter grade
4
- C = Ceramic PUK
5
- Voltage code x 100 = V
6
- C = PUK case TO-200AB (E-PUK)
7
- 0 = Eyelet terminals (gate and auxiliary cathode unsoldered leads)
(see Voltage Ratings table)
RRM
1 = Fast-on terminals (gate and auxiliary cathode unsoldered leads)
2 = Eyelet terminals (gate and auxiliary cathode soldered leads)
3 = Fast-on terminals (gate and auxiliary cathode soldered leads)
8 - Critical dV/dt:
None = 500 V/µs (standard selection)
L = 1000 V/µs (special selection)
9 - Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions http://www.vishay.com/doc?95075
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6 Revision: 11-Aug-08
Document Number: 94410
Page 7
Legal Disclaimer Notice
Vishay
Notice
The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of
International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the
products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or
anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
International Rectifier
are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product
names noted herein may be trademarks of their respective owners.
®
, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN
®
Document Number: 99901 www.vishay.com
Revision: 12-Mar-07 1
Page 8
DIMENSIONS in millimeters (inches)
Outline Dimensions
Vishay High Power Products
TO-200AB (E-PUK)
Case Style TO-200AB (E-PUK)
Anode to gate
Creepage distance: 11.18 (0.44) minimum
Strike distance: 7.62 (0.30) minimum
25.3 (0.99)
DIA. MAX.
0.3 (0.01) MIN.
14.1/15.1
(0.56/0.59)
25.3 (0.99)
DIA. MAX.
40.5 (1.59) DIA. MAX.
2 holes 3.56 (0.14) x 1.83 (0.07) minimum deep
0.3 (0.01) MIN.
Gate terminal for
1.47 (0.06) DIA.
pin receptacle
6.5 (0.26)
4.75 (0.19)
25° ± 5°
42 (1.65) MAX.
28 (1.10)
Quote between upper and lower pole pieces has to be considered after
application of mounting force (see thermal and mechanical specification)
Document Number: 95075 For technical questions concerning discrete products, contact: diodes-tech@vishay.com
Revision: 01-Aug-07 For technical questions concerning module products, contact: ind-modules@vishay.com
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